DE60334706D1 - Ür - Google Patents
ÜrInfo
- Publication number
- DE60334706D1 DE60334706D1 DE60334706T DE60334706T DE60334706D1 DE 60334706 D1 DE60334706 D1 DE 60334706D1 DE 60334706 T DE60334706 T DE 60334706T DE 60334706 T DE60334706 T DE 60334706T DE 60334706 D1 DE60334706 D1 DE 60334706D1
- Authority
- DE
- Germany
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/02—Alloys based on vanadium, niobium, or tantalum
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21J—FORGING; HAMMERING; PRESSING METAL; RIVETING; FORGE FURNACES
- B21J1/00—Preparing metal stock or similar ancillary operations prior, during or post forging, e.g. heating or cooling
- B21J1/02—Preliminary treatment of metal stock without particular shaping, e.g. salvaging segregated zones, forging or pressing in the rough
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21J—FORGING; HAMMERING; PRESSING METAL; RIVETING; FORGE FURNACES
- B21J5/00—Methods for forging, hammering, or pressing; Special equipment or accessories therefor
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
- C22F1/18—High-melting or refractory metals or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/4998—Combined manufacture including applying or shaping of fluent material
- Y10T29/49988—Metal casting
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Forging (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002274308A JP4883546B2 (ja) | 2002-09-20 | 2002-09-20 | タンタルスパッタリングターゲットの製造方法 |
PCT/JP2003/009575 WO2004027109A1 (ja) | 2002-09-20 | 2003-07-29 | タンタルスパッタリングターゲット及びその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60334706D1 true DE60334706D1 (de) | 2010-12-09 |
Family
ID=32024996
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60334706T Expired - Lifetime DE60334706D1 (de) | 2002-09-20 | 2003-07-29 | Ür |
Country Status (8)
Country | Link |
---|---|
US (3) | US7156963B2 (de) |
EP (1) | EP1541708B1 (de) |
JP (1) | JP4883546B2 (de) |
KR (1) | KR100643476B1 (de) |
CN (1) | CN100334252C (de) |
DE (1) | DE60334706D1 (de) |
TW (1) | TWI225895B (de) |
WO (1) | WO2004027109A1 (de) |
Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7081148B2 (en) * | 2001-09-18 | 2006-07-25 | Praxair S.T. Technology, Inc. | Textured-grain-powder metallurgy tantalum sputter target |
JP4883546B2 (ja) * | 2002-09-20 | 2012-02-22 | Jx日鉱日石金属株式会社 | タンタルスパッタリングターゲットの製造方法 |
JP4263900B2 (ja) * | 2002-11-13 | 2009-05-13 | 日鉱金属株式会社 | Taスパッタリングターゲット及びその製造方法 |
JP4256388B2 (ja) * | 2003-04-01 | 2009-04-22 | 日鉱金属株式会社 | タンタルスパッタリングターゲット |
US7892367B2 (en) * | 2003-11-06 | 2011-02-22 | Jx Nippon Mining & Metals Corporation | Tantalum sputtering target |
US8061177B2 (en) * | 2004-03-26 | 2011-11-22 | H.C. Starck Inc. | Refractory metal pots |
US8252126B2 (en) * | 2004-05-06 | 2012-08-28 | Global Advanced Metals, Usa, Inc. | Sputter targets and methods of forming same by rotary axial forging |
US7561937B2 (en) * | 2005-01-19 | 2009-07-14 | Tosoh Smd, Inc. | Automated sputtering target production |
US7998287B2 (en) * | 2005-02-10 | 2011-08-16 | Cabot Corporation | Tantalum sputtering target and method of fabrication |
JP5126742B2 (ja) * | 2005-04-28 | 2013-01-23 | Jx日鉱日石金属株式会社 | スパッタリングターゲット |
RU2434073C9 (ru) * | 2005-05-05 | 2012-12-27 | Х.К. Штарк Гмбх | Способ покрытия поверхности субстрата и продукт с нанесенным покрытием |
JP4904341B2 (ja) * | 2005-05-05 | 2012-03-28 | ハー.ツェー.スタルク ゲゼルシャフト ミット ベシュレンクテル ハフツング | スパッタターゲット及びx線アノードを製造又は再処理するための被覆方法 |
WO2007040014A1 (ja) | 2005-10-04 | 2007-04-12 | Nippon Mining & Metals Co., Ltd. | スパッタリングターゲット |
EE05493B1 (et) * | 2006-03-07 | 2011-12-15 | Cabot Corporation | Meetod l?pliku paksusega metallesemete valmistamiseks, saadud metallplaat ja selle valmistamiseks kasutatav BCC- metall |
JP4974362B2 (ja) | 2006-04-13 | 2012-07-11 | 株式会社アルバック | Taスパッタリングターゲットおよびその製造方法 |
US20080078268A1 (en) * | 2006-10-03 | 2008-04-03 | H.C. Starck Inc. | Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof |
AU2007317650B2 (en) * | 2006-11-07 | 2012-06-14 | H.C. Starck Surface Technology and Ceramic Powders GmbH | Method for coating a substrate and coated product |
US20080105542A1 (en) * | 2006-11-08 | 2008-05-08 | Purdy Clifford C | System and method of manufacturing sputtering targets |
US20080145688A1 (en) | 2006-12-13 | 2008-06-19 | H.C. Starck Inc. | Method of joining tantalum clade steel structures |
US8197894B2 (en) | 2007-05-04 | 2012-06-12 | H.C. Starck Gmbh | Methods of forming sputtering targets |
US8246903B2 (en) | 2008-09-09 | 2012-08-21 | H.C. Starck Inc. | Dynamic dehydriding of refractory metal powders |
US8043655B2 (en) * | 2008-10-06 | 2011-10-25 | H.C. Starck, Inc. | Low-energy method of manufacturing bulk metallic structures with submicron grain sizes |
EP2412843B1 (de) * | 2009-03-27 | 2013-11-06 | JX Nippon Mining & Metals Corporation | Lanthanum-sputtertarget |
EP2415899B1 (de) | 2009-03-31 | 2013-11-20 | JX Nippon Mining & Metals Corporation | Lanthanum-sputtertarget |
EP2418299A4 (de) | 2009-05-22 | 2013-05-01 | Jx Nippon Mining & Metals Corp | Tantalum-sputtertarget |
SG174153A1 (en) | 2009-08-11 | 2011-10-28 | Jx Nippon Mining & Metals Corp | Tantalum sputtering target |
KR101944580B1 (ko) * | 2010-08-09 | 2019-01-31 | 제이엑스금속주식회사 | 탄탈 스퍼터링 타깃 |
CN101920435B (zh) * | 2010-08-20 | 2012-01-11 | 宁夏东方钽业股份有限公司 | 溅射钽环件的制备工艺 |
US9412568B2 (en) | 2011-09-29 | 2016-08-09 | H.C. Starck, Inc. | Large-area sputtering targets |
US20140242401A1 (en) | 2011-11-30 | 2014-08-28 | Jx Nippon Mining & Metals Corporation | Tantalum Sputtering Target and Method for Manufacturing Same |
KR101882606B1 (ko) | 2012-03-21 | 2018-07-26 | 제이엑스금속주식회사 | 탄탈 스퍼터링 타깃 및 그 제조 방법 그리고 동 타깃을 사용하여 형성한 반도체 배선용 배리어막 |
US10490393B2 (en) | 2012-12-19 | 2019-11-26 | Jx Nippon Mining & Metals Corporation | Tantalum sputtering target and method for producing same |
KR101927574B1 (ko) * | 2012-12-19 | 2018-12-10 | 제이엑스금속주식회사 | 탄탈 스퍼터링 타깃 및 그 제조 방법 |
WO2014136679A1 (ja) | 2013-03-04 | 2014-09-12 | Jx日鉱日石金属株式会社 | タンタルスパッタリングターゲット及びその製造方法 |
KR20170141280A (ko) | 2013-10-01 | 2017-12-22 | 제이엑스금속주식회사 | 탄탈 스퍼터링 타깃 |
KR20160027122A (ko) | 2014-03-27 | 2016-03-09 | 제이엑스 킨조쿠 가부시키가이샤 | 탄탈 스퍼터링 타깃 및 그 제조 방법 |
CN104741872B (zh) * | 2015-01-16 | 2017-06-16 | 宁夏东方钽业股份有限公司 | 一种钽靶材的制备方法 |
WO2016164269A1 (en) | 2015-04-10 | 2016-10-13 | Tosoh Smd, Inc. | Method of making a tantalum sputter target and sputter targets made thereby |
JP6293928B2 (ja) * | 2015-05-22 | 2018-03-14 | Jx金属株式会社 | タンタルスパッタリングターゲット及びその製造方法 |
SG11201704463VA (en) | 2015-05-22 | 2017-07-28 | Jx Nippon Mining & Metals Corp | Tantalum sputtering target, and production method therefor |
TWI627299B (zh) * | 2017-01-20 | 2018-06-21 | 光洋應用材料科技股份有限公司 | 鉭濺鍍靶材及其製法 |
WO2018179742A1 (ja) * | 2017-03-30 | 2018-10-04 | Jx金属株式会社 | タンタルスパッタリングターゲット |
CN110709532B (zh) | 2017-06-22 | 2021-07-16 | 株式会社Uacj | 溅射靶材、溅射靶、溅射靶用铝板及其制造方法 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61124566A (ja) * | 1984-11-19 | 1986-06-12 | Mitsubishi Metal Corp | スパツタリング用Al−Si系合金タ−ゲツト板材の製造法 |
JPH01215426A (ja) * | 1988-02-24 | 1989-08-29 | O C C:Kk | 強靭な構造用金属材料の製造法 |
DE3825634C2 (de) | 1988-07-28 | 1994-06-30 | Thyssen Stahl Ag | Verfahren zur Erzeugung von Warmbad oder Grobblechen |
JP2901684B2 (ja) * | 1990-02-21 | 1999-06-07 | 株式会社神戸製鋼所 | マグネトロンスパッタリング用ターゲット材 |
JPH06264232A (ja) * | 1993-03-12 | 1994-09-20 | Nikko Kinzoku Kk | Ta製スパッタリングタ−ゲットとその製造方法 |
US5836506A (en) * | 1995-04-21 | 1998-11-17 | Sony Corporation | Sputter target/backing plate assembly and method of making same |
JPH09104972A (ja) * | 1995-10-05 | 1997-04-22 | Hitachi Metals Ltd | スパッタリング用チタンターゲットおよびその製造方法 |
US6197134B1 (en) | 1997-01-08 | 2001-03-06 | Dowa Mining Co., Ltd. | Processes for producing fcc metals |
JPH1180942A (ja) * | 1997-09-10 | 1999-03-26 | Japan Energy Corp | Taスパッタターゲットとその製造方法及び組立体 |
US6323055B1 (en) | 1998-05-27 | 2001-11-27 | The Alta Group, Inc. | Tantalum sputtering target and method of manufacture |
US6348139B1 (en) * | 1998-06-17 | 2002-02-19 | Honeywell International Inc. | Tantalum-comprising articles |
US6193821B1 (en) * | 1998-08-19 | 2001-02-27 | Tosoh Smd, Inc. | Fine grain tantalum sputtering target and fabrication process |
US6071389A (en) * | 1998-08-21 | 2000-06-06 | Tosoh Smd, Inc. | Diffusion bonded sputter target assembly and method of making |
US6348113B1 (en) * | 1998-11-25 | 2002-02-19 | Cabot Corporation | High purity tantalum, products containing the same, and methods of making the same |
JP2000323434A (ja) * | 1999-05-11 | 2000-11-24 | Toshiba Corp | スパッタターゲット、配線膜および電子部品 |
US6331233B1 (en) * | 2000-02-02 | 2001-12-18 | Honeywell International Inc. | Tantalum sputtering target with fine grains and uniform texture and method of manufacture |
JP3905301B2 (ja) | 2000-10-31 | 2007-04-18 | 日鉱金属株式会社 | タンタル又はタングステンターゲット−銅合金製バッキングプレート組立体及びその製造方法 |
US6770154B2 (en) * | 2001-09-18 | 2004-08-03 | Praxair S.T. Technology, Inc. | Textured-grain-powder metallurgy tantalum sputter target |
JP4883546B2 (ja) | 2002-09-20 | 2012-02-22 | Jx日鉱日石金属株式会社 | タンタルスパッタリングターゲットの製造方法 |
JP4263900B2 (ja) | 2002-11-13 | 2009-05-13 | 日鉱金属株式会社 | Taスパッタリングターゲット及びその製造方法 |
JP4256388B2 (ja) | 2003-04-01 | 2009-04-22 | 日鉱金属株式会社 | タンタルスパッタリングターゲット |
US7892367B2 (en) * | 2003-11-06 | 2011-02-22 | Jx Nippon Mining & Metals Corporation | Tantalum sputtering target |
-
2002
- 2002-09-20 JP JP2002274308A patent/JP4883546B2/ja not_active Expired - Lifetime
-
2003
- 2003-07-29 CN CNB038133822A patent/CN100334252C/zh not_active Expired - Lifetime
- 2003-07-29 WO PCT/JP2003/009575 patent/WO2004027109A1/ja active Application Filing
- 2003-07-29 EP EP03797517A patent/EP1541708B1/de not_active Expired - Lifetime
- 2003-07-29 DE DE60334706T patent/DE60334706D1/de not_active Expired - Lifetime
- 2003-07-29 US US10/514,955 patent/US7156963B2/en not_active Expired - Lifetime
- 2003-07-29 KR KR1020057004544A patent/KR100643476B1/ko active IP Right Grant
- 2003-07-31 TW TW092120960A patent/TWI225895B/zh not_active IP Right Cessation
-
2006
- 2006-09-19 US US11/533,044 patent/US7740717B2/en active Active
- 2006-09-19 US US11/533,092 patent/US7716806B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20050155856A1 (en) | 2005-07-21 |
TW200404909A (en) | 2004-04-01 |
CN1659305A (zh) | 2005-08-24 |
US20070062807A1 (en) | 2007-03-22 |
EP1541708A1 (de) | 2005-06-15 |
US7740717B2 (en) | 2010-06-22 |
TWI225895B (en) | 2005-01-01 |
WO2004027109A1 (ja) | 2004-04-01 |
JP2004107758A (ja) | 2004-04-08 |
US7156963B2 (en) | 2007-01-02 |
CN100334252C (zh) | 2007-08-29 |
EP1541708B1 (de) | 2010-10-27 |
US7716806B2 (en) | 2010-05-18 |
EP1541708A4 (de) | 2008-06-04 |
KR20050057382A (ko) | 2005-06-16 |
JP4883546B2 (ja) | 2012-02-22 |
US20070062806A1 (en) | 2007-03-22 |
KR100643476B1 (ko) | 2006-11-10 |
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