DE60332807D1 - Methode zum Ablagern und Strukturieren von Kohlenstoff-Nanoröhrchen mittels eines chemischen Selbstorganisierungsverfahrens - Google Patents

Methode zum Ablagern und Strukturieren von Kohlenstoff-Nanoröhrchen mittels eines chemischen Selbstorganisierungsverfahrens

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Publication number
DE60332807D1
DE60332807D1 DE60332807T DE60332807T DE60332807D1 DE 60332807 D1 DE60332807 D1 DE 60332807D1 DE 60332807 T DE60332807 T DE 60332807T DE 60332807 T DE60332807 T DE 60332807T DE 60332807 D1 DE60332807 D1 DE 60332807D1
Authority
DE
Germany
Prior art keywords
depositing
carbon nanotubes
chemical self
assembly method
structuring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60332807T
Other languages
English (en)
Inventor
Myung Sup Jung
Sung Ouk Yungong -Dan Jung
Jong Jin Park
Seung Joo Seo
Bon Won Koo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of DE60332807D1 publication Critical patent/DE60332807D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/165—Monolayers, e.g. Langmuir-Blodgett
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/842—Manufacture, treatment, or detection of nanostructure for carbon nanotubes or fullerenes
DE60332807T 2002-10-26 2003-10-23 Methode zum Ablagern und Strukturieren von Kohlenstoff-Nanoröhrchen mittels eines chemischen Selbstorganisierungsverfahrens Expired - Lifetime DE60332807D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20020065647 2002-10-26
KR1020030040461A KR100937085B1 (ko) 2002-10-26 2003-06-21 화학적 자기조립 방법을 이용한 탄소나노튜브 적층 및패턴 형성 방법

Publications (1)

Publication Number Publication Date
DE60332807D1 true DE60332807D1 (de) 2010-07-15

Family

ID=32473807

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60332807T Expired - Lifetime DE60332807D1 (de) 2002-10-26 2003-10-23 Methode zum Ablagern und Strukturieren von Kohlenstoff-Nanoröhrchen mittels eines chemischen Selbstorganisierungsverfahrens

Country Status (6)

Country Link
US (1) US6960425B2 (de)
EP (2) EP2063002B1 (de)
JP (1) JP3876995B2 (de)
KR (1) KR100937085B1 (de)
CN (1) CN1284720C (de)
DE (1) DE60332807D1 (de)

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US20070122622A1 (en) * 2002-04-23 2007-05-31 Freedman Philip D Electronic module with thermal dissipating surface
US6969690B2 (en) * 2003-03-21 2005-11-29 The University Of North Carolina At Chapel Hill Methods and apparatus for patterned deposition of nanostructure-containing materials by self-assembly and related articles
US7670831B2 (en) * 2003-06-13 2010-03-02 Korea Advanced Institute Of Science And Technology Conductive carbon nanotubes dotted with metal and method for fabricating a biosensor using the same
JP4927319B2 (ja) * 2003-07-24 2012-05-09 韓国科学技術園 高密度カーボンナノチューブフィルムまたはパターンを用いたバイオチップの製造方法
US7416993B2 (en) 2003-09-08 2008-08-26 Nantero, Inc. Patterned nanowire articles on a substrate and methods of making the same
KR100557338B1 (ko) * 2003-11-27 2006-03-06 한국과학기술원 자기조립 물질로 랩핑된 탄소나노튜브의 제조방법
KR100533316B1 (ko) * 2004-03-27 2005-12-02 한국과학기술원 포토리쏘그래피법과 드라이 에칭법을 이용한 탄소나노튜브다층막 패턴의 제조방법
US20080119008A1 (en) * 2004-08-31 2008-05-22 Yuji Miyato Molecular Device and Manufacturing Method for the Same
CN1746105B (zh) * 2004-09-08 2011-03-30 中国科学院化学研究所 层层组装技术构造多组分纳米管
KR100642719B1 (ko) * 2004-12-16 2006-11-10 고려대학교 산학협력단 탄소 나노 패턴의 제조방법 및 이에 의해 제조된 탄소 나노 패턴
KR100745752B1 (ko) * 2005-06-28 2007-08-02 삼성전자주식회사 탄소나노튜브의 탄화질 불순물의 정제방법
CN100340479C (zh) * 2005-06-30 2007-10-03 复旦大学 一种富勒烯衍生物在硅系介孔材料中的组装方法
KR100691806B1 (ko) * 2005-08-04 2007-03-12 삼성전자주식회사 비드 및 나노포어를 이용한 핵산 검출방법 및 검출장치
KR100809694B1 (ko) * 2005-08-12 2008-03-06 삼성전자주식회사 탄소나노튜브 제조 방법
KR100730350B1 (ko) * 2005-10-17 2007-06-19 삼성전자주식회사 표면처리된 나노포어를 이용한 ｄｎａ 검출방법 및검출장치
KR100754984B1 (ko) * 2005-11-16 2007-09-04 한국과학기술원 탄소나노튜브 분산액을 이용한 고순도 탄소나노튜브 필름의 제조방법
US7644512B1 (en) * 2006-01-18 2010-01-12 Akrion, Inc. Systems and methods for drying a rotating substrate
CN101164872B (zh) * 2006-10-20 2012-05-09 索尼株式会社 单层碳纳米管的制造方法
JP5002778B2 (ja) * 2007-02-21 2012-08-15 国立大学法人北海道大学 透明導電性膜基材の製造方法及び透明積層体の製造方法
JP5320564B2 (ja) * 2007-02-21 2013-10-23 国立大学法人北海道大学 微小カーボン単分子膜の形成方法及び表面コーティング方法並びにコーティング体
US7790560B2 (en) * 2007-03-12 2010-09-07 Board Of Regents Of The Nevada System Of Higher Education Construction of flash memory chips and circuits from ordered nanoparticles
US8000084B2 (en) * 2007-07-25 2011-08-16 Honeywell International, Inc. High voltage electrolytes
KR101438225B1 (ko) * 2007-12-14 2014-09-05 코오롱인더스트리 주식회사 전도성 재료 및 그 제조방법
KR100899396B1 (ko) * 2008-01-29 2009-05-27 주식회사 하이닉스반도체 블랭크 마스크 및 그 형성방법 및 기판 표면 개질 방법
KR101319499B1 (ko) 2008-02-22 2013-10-17 엘지디스플레이 주식회사 화학적 자기조립 방법을 이용한 나노선 혹은탄소나노튜브의 적층 및 패턴형성 방법과, 이를 적용한액정표시장치의 제조방법
US20100132771A1 (en) * 2008-10-06 2010-06-03 The Regents Of The University Of California 3D Carbon Nanotubes Membrane as a Solar Energy Absorbing Layer
KR101091744B1 (ko) * 2009-04-15 2011-12-08 한국과학기술연구원 메탈와이어를 이용한 전도성필름 제조방법 및 전도성필름
CN101794841A (zh) * 2010-03-03 2010-08-04 上海交通大学 基于碳纳米管增效的太阳电池制备方法
US8878157B2 (en) 2011-10-20 2014-11-04 University Of Kansas Semiconductor-graphene hybrids formed using solution growth
KR101444635B1 (ko) * 2012-06-21 2014-09-26 테슬라 나노코팅스, 인크. 기능화된 흑연물질의 제조방법
SG11201607554TA (en) * 2014-03-11 2016-10-28 Innovations Materium Inc Processes for preparing silica-carbon allotrope composite materials and using same
US20150318070A1 (en) * 2014-05-01 2015-11-05 Wisconsin Alumni Research Foundation Transparent conducting films containing single-walled carbon nanotubes dispersed in an azo dye
DE102014212077A1 (de) * 2014-06-24 2015-12-24 Technische Universität Dresden Verfahren zum Wachstum von vertikal ausgerichteten einwandigen Kohlenstoffnanoröhren mit gleichen elektronischen Eigenschaften sowie zum Vervielfältigen von einwandigen Kohlenstoffnanoröhren mit gleichen elektronischen Eigenschaften
CN104085879A (zh) * 2014-07-16 2014-10-08 哈尔滨工业大学 一种高浓度碳纳米管分散液的制备方法
CN106145944A (zh) * 2015-04-01 2016-11-23 合肥杰事杰新材料股份有限公司 一种高导电、导热和高强度碳材料薄膜及其制备方法
CN105609638B (zh) 2016-03-07 2018-09-11 京东方科技集团股份有限公司 一种半导体层和tft的制备方法、tft、阵列基板
JP7360161B2 (ja) 2020-01-24 2023-10-12 国立大学法人東海国立大学機構 積層体、積層体の製造方法、および、積層体を備えるデバイス
WO2021149582A1 (ja) * 2020-01-24 2021-07-29 国立大学法人東海国立大学機構 積層体、積層体の製造方法、および、積層体を備えるデバイス

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KR100947702B1 (ko) * 2003-02-26 2010-03-16 삼성전자주식회사 경화성 작용기로 표면수식된 탄소나노튜브를 이용한패턴박막 형성방법 및 고분자 복합체의 제조방법
US6969690B2 (en) * 2003-03-21 2005-11-29 The University Of North Carolina At Chapel Hill Methods and apparatus for patterned deposition of nanostructure-containing materials by self-assembly and related articles

Also Published As

Publication number Publication date
EP1455007B1 (de) 2010-06-02
EP1455007A2 (de) 2004-09-08
EP2063002B1 (de) 2011-11-23
EP2063002A2 (de) 2009-05-27
JP3876995B2 (ja) 2007-02-07
JP2004142097A (ja) 2004-05-20
EP2063002A3 (de) 2009-08-19
CN1284720C (zh) 2006-11-15
US20040142285A1 (en) 2004-07-22
KR100937085B1 (ko) 2010-01-15
KR20040036526A (ko) 2004-04-30
EP1455007A3 (de) 2005-06-08
US6960425B2 (en) 2005-11-01
CN1500715A (zh) 2004-06-02

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