DE60332420D1 - Oberflächenemittierende lichtaussendende Vorrichtung, Herstellungsverfahren derselben, optisches Modul, und Vorrichtung zur optischen Übertragung - Google Patents

Oberflächenemittierende lichtaussendende Vorrichtung, Herstellungsverfahren derselben, optisches Modul, und Vorrichtung zur optischen Übertragung

Info

Publication number
DE60332420D1
DE60332420D1 DE60332420T DE60332420T DE60332420D1 DE 60332420 D1 DE60332420 D1 DE 60332420D1 DE 60332420 T DE60332420 T DE 60332420T DE 60332420 T DE60332420 T DE 60332420T DE 60332420 D1 DE60332420 D1 DE 60332420D1
Authority
DE
Germany
Prior art keywords
manufacturing
light emitting
transmission device
optical transmission
optical module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60332420T
Other languages
English (en)
Inventor
Tsuyoshi Kaneko
Satoshi Kito
Tetsuo Hiramatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Application granted granted Critical
Publication of DE60332420D1 publication Critical patent/DE60332420D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18388—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02255—Out-coupling of light using beam deflecting elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Couplings Of Light Guides (AREA)
DE60332420T 2002-09-25 2003-09-24 Oberflächenemittierende lichtaussendende Vorrichtung, Herstellungsverfahren derselben, optisches Modul, und Vorrichtung zur optischen Übertragung Expired - Lifetime DE60332420D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002279065A JP4074498B2 (ja) 2002-09-25 2002-09-25 面発光型発光素子、光モジュールおよび光伝達装置

Publications (1)

Publication Number Publication Date
DE60332420D1 true DE60332420D1 (de) 2010-06-17

Family

ID=31973273

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60332420T Expired - Lifetime DE60332420D1 (de) 2002-09-25 2003-09-24 Oberflächenemittierende lichtaussendende Vorrichtung, Herstellungsverfahren derselben, optisches Modul, und Vorrichtung zur optischen Übertragung

Country Status (6)

Country Link
US (1) US7187702B2 (de)
EP (1) EP1403988B1 (de)
JP (1) JP4074498B2 (de)
KR (1) KR100622899B1 (de)
CN (1) CN1287496C (de)
DE (1) DE60332420D1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4056347B2 (ja) * 2002-09-30 2008-03-05 ローム株式会社 半導体発光装置およびその製造方法
JP4120813B2 (ja) 2003-06-12 2008-07-16 セイコーエプソン株式会社 光学部品およびその製造方法
JP3719441B2 (ja) 2003-08-01 2005-11-24 セイコーエプソン株式会社 光素子およびその製造方法、光モジュール、光伝達装置
JP4686967B2 (ja) * 2003-10-14 2011-05-25 セイコーエプソン株式会社 光素子の製造方法
US7408201B2 (en) * 2004-03-19 2008-08-05 Philips Lumileds Lighting Company, Llc Polarized semiconductor light emitting device
US7808011B2 (en) * 2004-03-19 2010-10-05 Koninklijke Philips Electronics N.V. Semiconductor light emitting devices including in-plane light emitting layers
JP4831283B2 (ja) * 2004-03-26 2011-12-07 セイコーエプソン株式会社 光電子集積素子、光モジュールおよび光電子集積素子の製造方法
US7483469B2 (en) 2004-11-01 2009-01-27 Seiko Epson Corporation Surface-emitting type semiconductor laser and its manufacturing method, optical module, and light transmission device
WO2006095393A1 (ja) * 2005-03-04 2006-09-14 Fujitsu Limited 光半導体装置とその製造方法
JP2007036140A (ja) * 2005-07-29 2007-02-08 Seiko Epson Corp 光素子およびその製造方法
JP4420075B2 (ja) 2007-07-17 2010-02-24 セイコーエプソン株式会社 液滴吐出ヘッド
KR101565749B1 (ko) 2009-02-09 2015-11-13 삼성전자 주식회사 발광 장치의 제조 방법
JP5381526B2 (ja) * 2009-09-08 2014-01-08 富士ゼロックス株式会社 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置
US8976833B2 (en) * 2013-03-12 2015-03-10 Taiwan Semiconductor Manufacturing Company, Ltd. Light coupling device and methods of forming same

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5586175A (en) 1978-12-22 1980-06-28 Canon Inc Photodiode
US4706101A (en) * 1984-10-27 1987-11-10 Kabushiki Kaisha Toshiba Light emitting diode formed of a compound semiconductor material
JPH0636439B2 (ja) 1986-02-25 1994-05-11 住友電気工業株式会社 半導体発光素子
JPS637674A (ja) 1986-06-27 1988-01-13 Mitsubishi Electric Corp 発光ダイオ−ド
JPS6484758A (en) 1987-09-28 1989-03-30 Nec Corp Light-emitting diode
JPH04192290A (ja) 1990-11-26 1992-07-10 Sharp Corp 薄膜ｅｌ装置
JPH088217B2 (ja) 1991-01-31 1996-01-29 日亜化学工業株式会社 窒化ガリウム系化合物半導体の結晶成長方法
JPH06151972A (ja) 1992-11-09 1994-05-31 Omron Corp レンズ・オン・チップ型発光装置及びその製造方法
JPH07153979A (ja) 1993-11-30 1995-06-16 Nippon Telegr & Teleph Corp <Ntt> 面型素子
US5778018A (en) * 1994-10-13 1998-07-07 Nec Corporation VCSELs (vertical-cavity surface emitting lasers) and VCSEL-based devices
JPH08307001A (ja) 1995-04-28 1996-11-22 Mitsubishi Electric Corp 半導体レ−ザダイオ−ドおよびその製造方法
AU2666497A (en) 1996-04-22 1997-11-12 W.L. Gore & Associates, Inc. Vertical cavity lasers with monolithically integrated refractive microlenses
JP3362836B2 (ja) 1997-12-26 2003-01-07 日亜化学工業株式会社 光半導体素子の製造方法
JP2000067449A (ja) 1998-08-18 2000-03-03 Seiko Epson Corp 面発光型半導体レーザおよびその製造方法
JP3778241B2 (ja) 1998-09-01 2006-05-24 セイコーエプソン株式会社 面発光型半導体レーザおよびその製造方法
JP3606063B2 (ja) 1998-09-21 2005-01-05 セイコーエプソン株式会社 面発光型半導体レーザの製造方法
DE19918370B4 (de) 1999-04-22 2006-06-08 Osram Opto Semiconductors Gmbh LED-Weißlichtquelle mit Linse
JP3612243B2 (ja) 1999-06-29 2005-01-19 株式会社東芝 光配線パッケージ及び光配線装置
JP2001066299A (ja) 1999-08-27 2001-03-16 Toto Ltd 検出装置および尿分析装置
JP2001156396A (ja) 1999-11-24 2001-06-08 Seiko Epson Corp 面発光レーザおよびその製造方法
JP2001284725A (ja) 2000-03-31 2001-10-12 Seiko Epson Corp 面発光型半導体レーザおよびその製造方法
JP2002169004A (ja) 2000-11-29 2002-06-14 Ind Technol Res Inst バッチ生産マイクロレンズアレイ及びその製造方法
US6782027B2 (en) * 2000-12-29 2004-08-24 Finisar Corporation Resonant reflector for use with optoelectronic devices
JP3998921B2 (ja) 2001-05-11 2007-10-31 日本電信電話株式会社 マイクロレンズ形成方法
JP2002353563A (ja) * 2001-05-24 2002-12-06 Rohm Co Ltd 半導体発光素子およびその製法
JP2004119583A (ja) 2002-09-25 2004-04-15 Seiko Epson Corp 光学素子の製造方法

Also Published As

Publication number Publication date
US20040120379A1 (en) 2004-06-24
EP1403988A3 (de) 2005-02-09
KR20040027358A (ko) 2004-04-01
CN1287496C (zh) 2006-11-29
JP2004119581A (ja) 2004-04-15
EP1403988A2 (de) 2004-03-31
US7187702B2 (en) 2007-03-06
CN1494188A (zh) 2004-05-05
KR100622899B1 (ko) 2006-09-18
EP1403988B1 (de) 2010-05-05
JP4074498B2 (ja) 2008-04-09

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