DE60325089D1 - Mram-architektur mit elektrisch isolierten lese-schreib-schaltkreisen - Google Patents

Mram-architektur mit elektrisch isolierten lese-schreib-schaltkreisen

Info

Publication number
DE60325089D1
DE60325089D1 DE60325089T DE60325089T DE60325089D1 DE 60325089 D1 DE60325089 D1 DE 60325089D1 DE 60325089 T DE60325089 T DE 60325089T DE 60325089 T DE60325089 T DE 60325089T DE 60325089 D1 DE60325089 D1 DE 60325089D1
Authority
DE
Germany
Prior art keywords
write
read
memory
reduces
functions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60325089T
Other languages
English (en)
Inventor
Joseph J Nahas
Thomas W Andre
Chitra K Subramanian
Bradley J Garni
Mark A Durlam
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Application granted granted Critical
Publication of DE60325089D1 publication Critical patent/DE60325089D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1655—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
DE60325089T 2002-06-28 2003-04-29 Mram-architektur mit elektrisch isolierten lese-schreib-schaltkreisen Expired - Lifetime DE60325089D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/185,868 US6903964B2 (en) 2002-06-28 2002-06-28 MRAM architecture with electrically isolated read and write circuitry
PCT/US2003/013094 WO2004003921A2 (en) 2002-06-28 2003-04-29 Mram architecture with electrically isolated read write circuitry

Publications (1)

Publication Number Publication Date
DE60325089D1 true DE60325089D1 (de) 2009-01-15

Family

ID=29779755

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60325089T Expired - Lifetime DE60325089D1 (de) 2002-06-28 2003-04-29 Mram-architektur mit elektrisch isolierten lese-schreib-schaltkreisen

Country Status (10)

Country Link
US (2) US6903964B2 (de)
EP (1) EP1573743B1 (de)
JP (1) JP2006508481A (de)
KR (1) KR20050009763A (de)
CN (1) CN100437818C (de)
AT (1) ATE416460T1 (de)
AU (1) AU2003228725A1 (de)
DE (1) DE60325089D1 (de)
TW (1) TWI310552B (de)
WO (1) WO2004003921A2 (de)

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JP2002230965A (ja) * 2001-01-24 2002-08-16 Internatl Business Mach Corp <Ibm> 不揮発性メモリ装置
KR100548997B1 (ko) * 2003-08-12 2006-02-02 삼성전자주식회사 다층박막구조의 자유층을 갖는 자기터널 접합 구조체들 및이를 채택하는 자기 램 셀들
US7209383B2 (en) * 2004-06-16 2007-04-24 Stmicroelectronics, Inc. Magnetic random access memory array having bit/word lines for shared write select and read operations
JP4874658B2 (ja) * 2005-02-04 2012-02-15 株式会社東芝 不揮発性半導体記憶装置
JP2006294179A (ja) * 2005-04-14 2006-10-26 Renesas Technology Corp 不揮発性記憶装置
US7276925B2 (en) * 2005-07-01 2007-10-02 P.A. Semi, Inc. Operating an integrated circuit at a minimum supply voltage
US7652494B2 (en) * 2005-07-01 2010-01-26 Apple Inc. Operating an integrated circuit at a minimum supply voltage
WO2007049353A1 (ja) * 2005-10-28 2007-05-03 Fujitsu Limited 磁気メモリ装置及びその書き込み方法
US8072792B2 (en) * 2008-02-15 2011-12-06 Qimonda Ag Integrated circuit with resistive memory cells and method for manufacturing same
KR101264518B1 (ko) * 2008-10-06 2013-05-14 가부시키가이샤 히타치세이사쿠쇼 반도체 장치
US7915910B2 (en) * 2009-01-28 2011-03-29 Apple Inc. Dynamic voltage and frequency management
US8519495B2 (en) * 2009-02-17 2013-08-27 Seagate Technology Llc Single line MRAM
US8111544B2 (en) * 2009-02-23 2012-02-07 Taiwan Semiconductor Manufacturing Company, Ltd. Programming MRAM cells using probability write
US8363460B2 (en) * 2010-04-07 2013-01-29 Avalanche Technology, Inc. Method and apparatus for programming a magnetic tunnel junction (MTJ)
US9183910B2 (en) 2012-05-31 2015-11-10 Samsung Electronics Co., Ltd. Semiconductor memory devices for alternately selecting bit lines
KR20140067254A (ko) 2012-11-26 2014-06-05 삼성전자주식회사 메모리 시스템과 이의 동작 방법
WO2014205335A1 (en) * 2013-06-21 2014-12-24 Lawrence Pileggi Bitcell wth magnetic switching elements
KR102645776B1 (ko) * 2016-11-18 2024-03-11 에스케이하이닉스 주식회사 저항성 메모리 장치, 이를 위한 리드 회로 및 방법
JP6276447B1 (ja) * 2017-03-24 2018-02-07 株式会社フローディア 不揮発性半導体記憶装置
JP2020155179A (ja) * 2019-03-20 2020-09-24 キオクシア株式会社 半導体記憶装置
JP2021044041A (ja) * 2019-09-12 2021-03-18 キオクシア株式会社 半導体記憶装置

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US123281A (en) * 1872-01-30 Improvement in harness-buckles
JPS58220293A (ja) * 1982-06-15 1983-12-21 Nec Corp 記憶装置
JPH08194679A (ja) * 1995-01-19 1996-07-30 Texas Instr Japan Ltd ディジタル信号処理方法及び装置並びにメモリセル読出し方法
US6246083B1 (en) * 1998-02-24 2001-06-12 Micron Technology, Inc. Vertical gain cell and array for a dynamic random access memory
US6246386B1 (en) * 1998-06-18 2001-06-12 Agilent Technologies, Inc. Integrated micro-display system
US5946227A (en) * 1998-07-20 1999-08-31 Motorola, Inc. Magnetoresistive random access memory with shared word and digit lines
US6111781A (en) * 1998-08-03 2000-08-29 Motorola, Inc. Magnetic random access memory array divided into a plurality of memory banks
US6391483B1 (en) * 1999-03-30 2002-05-21 Carnegie Mellon University Magnetic device and method of forming same
KR100366702B1 (ko) * 2000-02-03 2003-01-08 삼성전자 주식회사 쓰기 및 읽기 회로를 갖는 자기 터널 접합 소자를 이용한자기 랜덤 액세스 메모리
US6185143B1 (en) * 2000-02-04 2001-02-06 Hewlett-Packard Company Magnetic random access memory (MRAM) device including differential sense amplifiers
US6191989B1 (en) * 2000-03-07 2001-02-20 International Business Machines Corporation Current sensing amplifier
KR100365296B1 (ko) * 2000-08-01 2002-12-18 한국과학기술연구원 비파괴 판독형 비휘발성 강유전체 메모리의 구동 회로
US6272041B1 (en) * 2000-08-28 2001-08-07 Motorola, Inc. MTJ MRAM parallel-parallel architecture
KR100451096B1 (ko) * 2000-09-19 2004-10-02 엔이씨 일렉트로닉스 가부시키가이샤 자기메모리셀어레이를 갖는 비휘발성 반도체메모리장치
JP4656720B2 (ja) * 2000-09-25 2011-03-23 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
US6335890B1 (en) * 2000-11-01 2002-01-01 International Business Machines Corporation Segmented write line architecture for writing magnetic random access memories
KR100380347B1 (ko) * 2000-11-21 2003-04-11 삼성전자주식회사 반도체 메모리 장치 및 이 장치의 데이터 리드 방법
JP3812805B2 (ja) * 2001-01-16 2006-08-23 日本電気株式会社 トンネル磁気抵抗素子を利用した半導体記憶装置
JP2002230965A (ja) * 2001-01-24 2002-08-16 Internatl Business Mach Corp <Ibm> 不揮発性メモリ装置
US6743681B2 (en) * 2001-11-09 2004-06-01 Micron Technology, Inc. Methods of Fabricating Gate and Storage Dielectric Stacks having Silicon-Rich-Nitride
US6795334B2 (en) * 2001-12-21 2004-09-21 Kabushiki Kaisha Toshiba Magnetic random access memory
US6839269B2 (en) 2001-12-28 2005-01-04 Kabushiki Kaisha Toshiba Magnetic random access memory
US6498747B1 (en) * 2002-02-08 2002-12-24 Infineon Technologies Ag Magnetoresistive random access memory (MRAM) cross-point array with reduced parasitic effects

Also Published As

Publication number Publication date
US7154772B2 (en) 2006-12-26
KR20050009763A (ko) 2005-01-25
WO2004003921A2 (en) 2004-01-08
AU2003228725A1 (en) 2004-01-19
CN100437818C (zh) 2008-11-26
TW200409116A (en) 2004-06-01
WO2004003921A3 (en) 2005-11-24
US20040001358A1 (en) 2004-01-01
JP2006508481A (ja) 2006-03-09
CN1757076A (zh) 2006-04-05
US6903964B2 (en) 2005-06-07
TWI310552B (en) 2009-06-01
US20050152183A1 (en) 2005-07-14
EP1573743B1 (de) 2008-12-03
EP1573743A2 (de) 2005-09-14
ATE416460T1 (de) 2008-12-15

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