DE60311954D1 - Magnetischer Direktzugriffspeicher zur Speicherung von Informationen unter Verwendung des Magnetoresistivereffekts - Google Patents

Magnetischer Direktzugriffspeicher zur Speicherung von Informationen unter Verwendung des Magnetoresistivereffekts

Info

Publication number
DE60311954D1
DE60311954D1 DE60311954T DE60311954T DE60311954D1 DE 60311954 D1 DE60311954 D1 DE 60311954D1 DE 60311954 T DE60311954 T DE 60311954T DE 60311954 T DE60311954 T DE 60311954T DE 60311954 D1 DE60311954 D1 DE 60311954D1
Authority
DE
Germany
Prior art keywords
random access
access memory
storing information
magnetoresistive effect
magnetic random
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60311954T
Other languages
English (en)
Other versions
DE60311954T2 (de
Inventor
Kenji Tsuchida
Yoshihisa Iwata
Tomoki Higashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE60311954D1 publication Critical patent/DE60311954D1/de
Application granted granted Critical
Publication of DE60311954T2 publication Critical patent/DE60311954T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
DE60311954T 2002-12-27 2003-04-28 Magnetischer Direktzugriffspeicher zur Speicherung von Informationen unter Verwendung des Magnetoresistiveffekts Expired - Lifetime DE60311954T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002382392A JP2004213771A (ja) 2002-12-27 2002-12-27 磁気ランダムアクセスメモリ
JP2002382392 2002-12-27

Publications (2)

Publication Number Publication Date
DE60311954D1 true DE60311954D1 (de) 2007-04-05
DE60311954T2 DE60311954T2 (de) 2007-11-08

Family

ID=32501157

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60311954T Expired - Lifetime DE60311954T2 (de) 2002-12-27 2003-04-28 Magnetischer Direktzugriffspeicher zur Speicherung von Informationen unter Verwendung des Magnetoresistiveffekts

Country Status (5)

Country Link
US (1) US6862210B2 (de)
EP (1) EP1435622B1 (de)
JP (1) JP2004213771A (de)
CN (1) CN100367406C (de)
DE (1) DE60311954T2 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003242771A (ja) * 2002-02-15 2003-08-29 Toshiba Corp 半導体記憶装置
US20050195673A1 (en) * 2002-07-15 2005-09-08 Yoshiaki Asao Magnetic random access memory having memory cells configured by use of tunneling magnetoresistive elements
JP3766380B2 (ja) * 2002-12-25 2006-04-12 株式会社東芝 磁気ランダムアクセスメモリ及びその磁気ランダムアクセスメモリのデータ読み出し方法
US7123506B2 (en) * 2004-02-13 2006-10-17 Applied Spintronics Technology, Inc. Method and system for performing more consistent switching of magnetic elements in a magnetic memory
KR100612878B1 (ko) * 2004-12-03 2006-08-14 삼성전자주식회사 자기 메모리 소자와 그 제조 및 동작방법
JP4575181B2 (ja) * 2005-01-28 2010-11-04 株式会社東芝 スピン注入磁気ランダムアクセスメモリ
JP4284308B2 (ja) 2005-08-02 2009-06-24 株式会社東芝 磁気ランダムアクセスメモリ
JP5067650B2 (ja) 2006-01-06 2012-11-07 日本電気株式会社 半導体記憶装置
US8027184B2 (en) 2006-03-06 2011-09-27 Nec Corporation Semiconductor storage device and operating method of the same
JP5045672B2 (ja) 2006-06-08 2012-10-10 日本電気株式会社 ２ｔ２ｍｔｊセルを用いたｍｒａｍ
US8693238B2 (en) 2006-08-07 2014-04-08 Nec Corporation MRAM having variable word line drive potential
JP2010232475A (ja) * 2009-03-27 2010-10-14 Renesas Electronics Corp 磁気記憶装置およびその製造方法
US20110141802A1 (en) * 2009-12-15 2011-06-16 Grandis, Inc. Method and system for providing a high density memory cell for spin transfer torque random access memory
US9130151B2 (en) 2010-01-11 2015-09-08 Samsung Electronics Co., Ltd. Method and system for providing magnetic tunneling junctions usable in spin transfer torque magnetic memories
US8766383B2 (en) 2011-07-07 2014-07-01 Samsung Electronics Co., Ltd. Method and system for providing a magnetic junction using half metallic ferromagnets
WO2014192153A1 (ja) * 2013-05-31 2014-12-04 株式会社日立製作所 半導体装置
US20150262671A1 (en) * 2014-03-13 2015-09-17 Kabushiki Kaisha Toshiba Non-volatile memory device
CN105448340A (zh) * 2014-06-20 2016-03-30 中芯国际集成电路制造(上海)有限公司 电可擦可编程只读存储器
KR102237706B1 (ko) * 2014-09-29 2021-04-08 삼성전자주식회사 자기 메모리 장치
CN104882157B (zh) * 2015-05-26 2017-05-10 湖北中部慧易数据科技有限公司 一种磁随机存储系统及其读取操作方法
JP6995377B2 (ja) * 2017-02-14 2022-02-04 国立大学法人東北大学 メモリ装置
JP2021048190A (ja) * 2019-09-17 2021-03-25 キオクシア株式会社 磁気メモリ

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CH412010A (de) 1963-09-27 1966-04-30 Ibm Magnetschichtspeicher
US5894447A (en) 1996-09-26 1999-04-13 Kabushiki Kaisha Toshiba Semiconductor memory device including a particular memory cell block structure
US6169688B1 (en) 1998-03-23 2001-01-02 Kabushiki Kaisha Toshiba Magnetic storage device using unipole currents for selecting memory cells
JP2000132961A (ja) 1998-10-23 2000-05-12 Canon Inc 磁気薄膜メモリ、磁気薄膜メモリの読出し方法、及び磁気薄膜メモリの書込み方法
JP3800925B2 (ja) 2000-05-15 2006-07-26 日本電気株式会社 磁気ランダムアクセスメモリ回路
JP4477199B2 (ja) 2000-06-16 2010-06-09 株式会社ルネサステクノロジ 磁気ランダムアクセスメモリ、磁気ランダムアクセスメモリへのアクセス方法および磁気ランダムアクセスメモリの製造方法
JP4472122B2 (ja) 2000-06-19 2010-06-02 株式会社ルネサステクノロジ 磁気ランダムアクセスメモリおよびその製造方法
US6331943B1 (en) * 2000-08-28 2001-12-18 Motorola, Inc. MTJ MRAM series-parallel architecture
KR100451096B1 (ko) 2000-09-19 2004-10-02 엔이씨 일렉트로닉스 가부시키가이샤 자기메모리셀어레이를 갖는 비휘발성 반도체메모리장치
JP3737403B2 (ja) 2000-09-19 2006-01-18 Ｎｅｃエレクトロニクス株式会社 メモリセルアレイ、不揮発性記憶ユニットおよび不揮発性半導体記憶装置
JP2002170377A (ja) 2000-09-22 2002-06-14 Mitsubishi Electric Corp 薄膜磁性体記憶装置
JP2002176150A (ja) 2000-09-27 2002-06-21 Canon Inc 磁気抵抗効果を用いた不揮発固体メモリ素子およびメモリとその記録再生方法
KR100390978B1 (ko) 2000-12-28 2003-07-12 주식회사 하이닉스반도체 마그네틱 램
US6356477B1 (en) 2001-01-29 2002-03-12 Hewlett Packard Company Cross point memory array including shared devices for blocking sneak path currents
JP4771631B2 (ja) 2001-09-21 2011-09-14 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
EP1321944B1 (de) * 2001-12-21 2008-07-30 Kabushiki Kaisha Toshiba Magnetischer Direktzugriffsspeicher
EP1321941B1 (de) * 2001-12-21 2005-08-17 Kabushiki Kaisha Toshiba MRAM mit gestapelten Speicherzellen
JP2003242771A (ja) * 2002-02-15 2003-08-29 Toshiba Corp 半導体記憶装置

Also Published As

Publication number Publication date
US20040125647A1 (en) 2004-07-01
EP1435622A2 (de) 2004-07-07
CN100367406C (zh) 2008-02-06
EP1435622A3 (de) 2004-07-28
JP2004213771A (ja) 2004-07-29
DE60311954T2 (de) 2007-11-08
US6862210B2 (en) 2005-03-01
CN1534679A (zh) 2004-10-06
EP1435622B1 (de) 2007-02-21

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Legal Events

Date Code Title Description
8381 Inventor (new situation)

Inventor name: TSUCHIDA, KENJI, MINATO-KU, TOKYO 105-8001, JP

Inventor name: IWATA, YOSHIHISA, MINATO-KU, TOKYO 105-8001, JP

Inventor name: HIGASHI, TOMOKI, MINATO-KU, TOKYO 105-8001, JP

8364 No opposition during term of opposition