DE60236708D1 - Elektrodenmaterial mit verbessertem Wasserstoffdegradationswiderstand und Herstellungsmethode - Google Patents
Elektrodenmaterial mit verbessertem Wasserstoffdegradationswiderstand und HerstellungsmethodeInfo
- Publication number
- DE60236708D1 DE60236708D1 DE60236708T DE60236708T DE60236708D1 DE 60236708 D1 DE60236708 D1 DE 60236708D1 DE 60236708 T DE60236708 T DE 60236708T DE 60236708 T DE60236708 T DE 60236708T DE 60236708 D1 DE60236708 D1 DE 60236708D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- electrode material
- degradation resistance
- improved hydrogen
- hydrogen degradation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 title 1
- 230000015556 catabolic process Effects 0.000 title 1
- 238000006731 degradation reaction Methods 0.000 title 1
- 239000007772 electrode material Substances 0.000 title 1
- 229910052739 hydrogen Inorganic materials 0.000 title 1
- 239000001257 hydrogen Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
- H01L21/31683—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of metallic layers, e.g. Al deposited on the body, e.g. formation of multi-layer insulating structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/817,712 US6440752B1 (en) | 2001-03-26 | 2001-03-26 | Electrode materials with improved hydrogen degradation resistance and fabrication method |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60236708D1 true DE60236708D1 (de) | 2010-07-29 |
Family
ID=25223716
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60236708T Expired - Lifetime DE60236708D1 (de) | 2001-03-26 | 2002-03-25 | Elektrodenmaterial mit verbessertem Wasserstoffdegradationswiderstand und Herstellungsmethode |
Country Status (6)
Country | Link |
---|---|
US (2) | US6440752B1 (ja) |
EP (1) | EP1246231B1 (ja) |
JP (1) | JP3942159B2 (ja) |
KR (1) | KR100515179B1 (ja) |
DE (1) | DE60236708D1 (ja) |
TW (1) | TW569256B (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100471163B1 (ko) * | 2002-03-14 | 2005-03-09 | 삼성전자주식회사 | 커패시터들을 갖는 반도체소자의 제조방법 |
KR100467369B1 (ko) * | 2002-05-18 | 2005-01-24 | 주식회사 하이닉스반도체 | 수소배리어막 및 그를 구비한 반도체장치의 제조 방법 |
KR100669688B1 (ko) * | 2003-03-12 | 2007-01-18 | 삼성에스디아이 주식회사 | 박막트랜지스터 및 이를 구비한 평판표시소자 |
JP4038485B2 (ja) * | 2003-03-12 | 2008-01-23 | 三星エスディアイ株式会社 | 薄膜トランジスタを備えた平板表示素子 |
US6774004B1 (en) * | 2003-03-17 | 2004-08-10 | Sharp Laboratories Of America, Inc. | Nano-scale resistance cross-point memory array |
CN102084466B (zh) * | 2008-07-01 | 2013-09-11 | 应用材料公司 | 模块化底板半导体抛光器结构 |
US9228973B2 (en) * | 2009-11-06 | 2016-01-05 | Hitachi, Ltd. | Gas sensor |
JP5585241B2 (ja) | 2010-06-25 | 2014-09-10 | セイコーエプソン株式会社 | 焦電型検出器、焦電型検出装置及び電子機器 |
JP6593590B2 (ja) * | 2015-10-01 | 2019-10-23 | セイコーエプソン株式会社 | 圧電素子、液体噴射ヘッド及び圧電デバイス |
WO2019005019A1 (en) * | 2017-06-27 | 2019-01-03 | Intel Corporation | FERROELECTRIC MEMORY MATRIX WITH CROSS POINTS |
CN108878289B (zh) * | 2018-06-15 | 2021-09-14 | 常州亿晶光电科技有限公司 | 高效电池退火工艺 |
US11527701B2 (en) | 2019-10-28 | 2022-12-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Piezoelectric device and method of forming the same |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3452800B2 (ja) * | 1997-06-30 | 2003-09-29 | ヒュンダイ エレクトロニクス インダストリーズ カムパニー リミテッド | 高集積記憶素子およびその製造方法 |
DE19737323A1 (de) * | 1997-08-28 | 1999-03-11 | Philips Patentverwaltung | Dünnschichtkondensator mit Schichtelektrode |
KR20000045234A (ko) * | 1998-12-30 | 2000-07-15 | 김영환 | 반도체 소자의 커패시터 형성방법 |
US6399521B1 (en) * | 1999-05-21 | 2002-06-04 | Sharp Laboratories Of America, Inc. | Composite iridium barrier structure with oxidized refractory metal companion barrier and method for same |
US6190963B1 (en) * | 1999-05-21 | 2001-02-20 | Sharp Laboratories Of America, Inc. | Composite iridium-metal-oxygen barrier structure with refractory metal companion barrier and method for same |
JP2000349245A (ja) * | 1999-06-02 | 2000-12-15 | Sony Corp | 誘電体キャパシタおよびメモリならびにそれらの製造方法 |
-
2001
- 2001-03-26 US US09/817,712 patent/US6440752B1/en not_active Expired - Fee Related
-
2002
- 2002-03-18 JP JP2002075137A patent/JP3942159B2/ja not_active Expired - Fee Related
- 2002-03-25 KR KR10-2002-0016142A patent/KR100515179B1/ko not_active IP Right Cessation
- 2002-03-25 TW TW091105777A patent/TW569256B/zh not_active IP Right Cessation
- 2002-03-25 DE DE60236708T patent/DE60236708D1/de not_active Expired - Lifetime
- 2002-03-25 EP EP02006830A patent/EP1246231B1/en not_active Expired - Lifetime
- 2002-08-27 US US10/229,603 patent/US6833572B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20030007319A1 (en) | 2003-01-09 |
KR100515179B1 (ko) | 2005-09-16 |
US6440752B1 (en) | 2002-08-27 |
TW569256B (en) | 2004-01-01 |
KR20020076148A (ko) | 2002-10-09 |
US6833572B2 (en) | 2004-12-21 |
EP1246231A3 (en) | 2004-12-15 |
JP3942159B2 (ja) | 2007-07-11 |
EP1246231A2 (en) | 2002-10-02 |
EP1246231B1 (en) | 2010-06-16 |
JP2002319660A (ja) | 2002-10-31 |
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