DE60236708D1 - Elektrodenmaterial mit verbessertem Wasserstoffdegradationswiderstand und Herstellungsmethode - Google Patents

Elektrodenmaterial mit verbessertem Wasserstoffdegradationswiderstand und Herstellungsmethode

Info

Publication number
DE60236708D1
DE60236708D1 DE60236708T DE60236708T DE60236708D1 DE 60236708 D1 DE60236708 D1 DE 60236708D1 DE 60236708 T DE60236708 T DE 60236708T DE 60236708 T DE60236708 T DE 60236708T DE 60236708 D1 DE60236708 D1 DE 60236708D1
Authority
DE
Germany
Prior art keywords
manufacturing
electrode material
degradation resistance
improved hydrogen
hydrogen degradation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60236708T
Other languages
English (en)
Inventor
Fengyan Zhang
Tingkai Li
Hong Ying
Yoshi Ono
Sheng Teng Hsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE60236708D1 publication Critical patent/DE60236708D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31683—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of metallic layers, e.g. Al deposited on the body, e.g. formation of multi-layer insulating structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
DE60236708T 2001-03-26 2002-03-25 Elektrodenmaterial mit verbessertem Wasserstoffdegradationswiderstand und Herstellungsmethode Expired - Lifetime DE60236708D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/817,712 US6440752B1 (en) 2001-03-26 2001-03-26 Electrode materials with improved hydrogen degradation resistance and fabrication method

Publications (1)

Publication Number Publication Date
DE60236708D1 true DE60236708D1 (de) 2010-07-29

Family

ID=25223716

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60236708T Expired - Lifetime DE60236708D1 (de) 2001-03-26 2002-03-25 Elektrodenmaterial mit verbessertem Wasserstoffdegradationswiderstand und Herstellungsmethode

Country Status (6)

Country Link
US (2) US6440752B1 (de)
EP (1) EP1246231B1 (de)
JP (1) JP3942159B2 (de)
KR (1) KR100515179B1 (de)
DE (1) DE60236708D1 (de)
TW (1) TW569256B (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100471163B1 (ko) * 2002-03-14 2005-03-09 삼성전자주식회사 커패시터들을 갖는 반도체소자의 제조방법
KR100467369B1 (ko) * 2002-05-18 2005-01-24 주식회사 하이닉스반도체 수소배리어막 및 그를 구비한 반도체장치의 제조 방법
KR100669688B1 (ko) * 2003-03-12 2007-01-18 삼성에스디아이 주식회사 박막트랜지스터 및 이를 구비한 평판표시소자
JP4038485B2 (ja) * 2003-03-12 2008-01-23 三星エスディアイ株式会社 薄膜トランジスタを備えた平板表示素子
US6774004B1 (en) * 2003-03-17 2004-08-10 Sharp Laboratories Of America, Inc. Nano-scale resistance cross-point memory array
WO2010002595A2 (en) * 2008-07-01 2010-01-07 Applied Materials, Inc. Modular base-plate semiconductor polisher architecture
WO2011055605A1 (ja) * 2009-11-06 2011-05-12 株式会社日立製作所 ガスセンサ
JP5585241B2 (ja) * 2010-06-25 2014-09-10 セイコーエプソン株式会社 焦電型検出器、焦電型検出装置及び電子機器
JP6593590B2 (ja) * 2015-10-01 2019-10-23 セイコーエプソン株式会社 圧電素子、液体噴射ヘッド及び圧電デバイス
WO2019005019A1 (en) * 2017-06-27 2019-01-03 Intel Corporation FERROELECTRIC MEMORY MATRIX WITH CROSS POINTS
CN108878289B (zh) * 2018-06-15 2021-09-14 常州亿晶光电科技有限公司 高效电池退火工艺
US11527701B2 (en) * 2019-10-28 2022-12-13 Taiwan Semiconductor Manufacturing Company, Ltd. Piezoelectric device and method of forming the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3452800B2 (ja) * 1997-06-30 2003-09-29 ヒュンダイ エレクトロニクス インダストリーズ カムパニー リミテッド 高集積記憶素子およびその製造方法
DE19737323A1 (de) * 1997-08-28 1999-03-11 Philips Patentverwaltung Dünnschichtkondensator mit Schichtelektrode
KR20000045234A (ko) * 1998-12-30 2000-07-15 김영환 반도체 소자의 커패시터 형성방법
US6190963B1 (en) * 1999-05-21 2001-02-20 Sharp Laboratories Of America, Inc. Composite iridium-metal-oxygen barrier structure with refractory metal companion barrier and method for same
US6399521B1 (en) * 1999-05-21 2002-06-04 Sharp Laboratories Of America, Inc. Composite iridium barrier structure with oxidized refractory metal companion barrier and method for same
JP2000349245A (ja) * 1999-06-02 2000-12-15 Sony Corp 誘電体キャパシタおよびメモリならびにそれらの製造方法

Also Published As

Publication number Publication date
US6440752B1 (en) 2002-08-27
KR20020076148A (ko) 2002-10-09
US20030007319A1 (en) 2003-01-09
TW569256B (en) 2004-01-01
EP1246231A3 (de) 2004-12-15
JP2002319660A (ja) 2002-10-31
US6833572B2 (en) 2004-12-21
EP1246231B1 (de) 2010-06-16
KR100515179B1 (ko) 2005-09-16
EP1246231A2 (de) 2002-10-02
JP3942159B2 (ja) 2007-07-11

Similar Documents

Publication Publication Date Title
EP1489630A4 (de) Leitfähiges material mit kohlenstoff-nanoröhre und herstellungsverfahren dafür
EP1497483A4 (de) Platinelektrode und herstellungsverfahren dafür
DE60036358D1 (de) Polymerelektrolyt und Herstellungsverfahren dafür
EP1684370A4 (de) Elektrode-aktivmaterial und verwendung dafür
DE60143666D1 (de) Flachbatterie und herstellungsverfahren dafür
DE602004011379D1 (de) Zwirne und gewebe mit schnittfestigkeit als auch estellungsverfahren
DE60132450D1 (de) Solarzelle und Herstellungsmethode
DE60037526D1 (de) P-typ zinkoxid-einkristall mit niedrigem widerstand und herstellungsverfahren dafür
DE60117132D1 (de) Speicherzelle mit dotierten nanokristallen, herstellungsverfahren und arbeitsweise
DE60221752D1 (de) Brennstoffzellenelektrode, Verfahren zur Herstellung und Brennstoffzelle mit solcher Elektrode
DE60238358D1 (de) Naturkautschuk-masterbatch dessen Herstellungsverfahren, und Naturkautschukzusammensetzung
DE60028034D1 (de) Elektrode und herstellungsmethode für eine elektrode
AU2003285111A8 (en) Electrophoretic or electromagnetophoretic display device with several layers of display cells, and manufacturing method
DE69908803D1 (de) Verbundelektrode mit ptc polymer
DE69940600D1 (de) Dichtungsmaterial und herstellungsverfahren desselben
DE50211924D1 (de) Widerstandsschweisseinrichtung und steuerverfahren
DE69931890D1 (de) Integrierter Leistungsschaltkreis mit vertikalem Stromfluss und dessen Herstellungsverfahren
DE60112675D1 (de) Elektrisch isolierendes Material und dessen Herstellungsverfahren
DE502004004173D1 (de) Silber-legierung und deren Verwendung
DE60236708D1 (de) Elektrodenmaterial mit verbessertem Wasserstoffdegradationswiderstand und Herstellungsmethode
IL174044A0 (en) Electical wire and method of fabricating the electrical wire
EP1347523A4 (de) Elektrodenmaterial für elektrochemisches element, herstellungsverfahren dafür und elektrochemisches element
DE10196256T1 (de) Verbundelektrodenmaterial und Verfahren zum Herstellen desselben, und dasselbe verwendendes elektrochemisches Element
EP1628351A4 (de) Piezoelektrisches material, herstellungsverfahren dafür und nichtlineares piezoelektrisches element
DE60330600D1 (de) Elektrisch leitendes zinkoxydpulver und dessen herstellungsverfahren und elektrisch leitende zusammensetzung