DE60232482D1 - Verfahren zum Verringern der Abmessungen eines Bildmusters in einer Photoresistschicht - Google Patents

Verfahren zum Verringern der Abmessungen eines Bildmusters in einer Photoresistschicht

Info

Publication number
DE60232482D1
DE60232482D1 DE60232482T DE60232482T DE60232482D1 DE 60232482 D1 DE60232482 D1 DE 60232482D1 DE 60232482 T DE60232482 T DE 60232482T DE 60232482 T DE60232482 T DE 60232482T DE 60232482 D1 DE60232482 D1 DE 60232482D1
Authority
DE
Germany
Prior art keywords
dimensions
reducing
photoresist layer
image pattern
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60232482T
Other languages
English (en)
Inventor
Yoshiki Sugeta
Fumitake Kaneko
Toshikazu Tachikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2001302553A external-priority patent/JP3578403B2/ja
Priority claimed from JP2001302554A external-priority patent/JP3662870B2/ja
Priority claimed from JP2001302555A external-priority patent/JP3628010B2/ja
Priority claimed from JP2001302552A external-priority patent/JP3825294B2/ja
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Application granted granted Critical
Publication of DE60232482D1 publication Critical patent/DE60232482D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Weting (AREA)
DE60232482T 2001-07-05 2002-06-21 Verfahren zum Verringern der Abmessungen eines Bildmusters in einer Photoresistschicht Expired - Fee Related DE60232482D1 (de)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2001205241 2001-07-05
JP2001205240 2001-07-05
JP2001205242 2001-07-05
JP2001302553A JP3578403B2 (ja) 2001-07-05 2001-09-28 微細レジストパターン形成用水溶性樹脂の選択方法
JP2001302554A JP3662870B2 (ja) 2001-07-05 2001-09-28 レジストパターン微細化用被覆形成剤及びそれを用いた微細レジストパターン形成方法
JP2001302555A JP3628010B2 (ja) 2001-07-05 2001-09-28 レジストパターン微細化用被覆形成剤及びそれを用いた微細レジストパターン形成方法
JP2001302552A JP3825294B2 (ja) 2001-09-28 2001-09-28 レジストパターンの微細化方法及びその方法に用いるレジストパターン微細化用被覆形成液

Publications (1)

Publication Number Publication Date
DE60232482D1 true DE60232482D1 (de) 2009-07-16

Family

ID=27567056

Family Applications (3)

Application Number Title Priority Date Filing Date
DE60232686T Expired - Fee Related DE60232686D1 (de) 2001-07-05 2002-06-21 Verfahren zur Verkleinerung des Musters in einer Photoresistschicht
DE60238957T Expired - Lifetime DE60238957D1 (de) 2001-07-05 2002-06-21 Verfahren zur Reduktion der Mustergröße auf einer Photoresistschicht
DE60232482T Expired - Fee Related DE60232482D1 (de) 2001-07-05 2002-06-21 Verfahren zum Verringern der Abmessungen eines Bildmusters in einer Photoresistschicht

Family Applications Before (2)

Application Number Title Priority Date Filing Date
DE60232686T Expired - Fee Related DE60232686D1 (de) 2001-07-05 2002-06-21 Verfahren zur Verkleinerung des Musters in einer Photoresistschicht
DE60238957T Expired - Lifetime DE60238957D1 (de) 2001-07-05 2002-06-21 Verfahren zur Reduktion der Mustergröße auf einer Photoresistschicht

Country Status (6)

Country Link
US (5) US20030008968A1 (de)
EP (4) EP1489463A3 (de)
KR (1) KR100479488B1 (de)
CN (4) CN100468211C (de)
DE (3) DE60232686D1 (de)
SG (3) SG153648A1 (de)

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3476080B2 (ja) * 2001-11-05 2003-12-10 東京応化工業株式会社 微細パターンの形成方法
KR100546126B1 (ko) * 2002-11-29 2006-01-24 주식회사 하이닉스반도체 포토레지스트용 오버코팅 조성물
JP4278966B2 (ja) 2002-12-02 2009-06-17 東京応化工業株式会社 レジストパターン形成方法、ポジ型レジスト組成物及び積層体
KR100464654B1 (ko) * 2003-01-13 2005-01-03 주식회사 하이닉스반도체 반도체소자의 콘택홀 형성방법
JP4235466B2 (ja) * 2003-02-24 2009-03-11 Ａｚエレクトロニックマテリアルズ株式会社 水溶性樹脂組成物、パターン形成方法及びレジストパターンの検査方法
JP4012480B2 (ja) * 2003-03-28 2007-11-21 Ａｚエレクトロニックマテリアルズ株式会社 微細パターン形成補助剤及びその製造法
KR100532434B1 (ko) 2003-05-09 2005-11-30 삼성전자주식회사 반도체 메모리 소자의 커패시터 제조 방법
JP2005003840A (ja) * 2003-06-11 2005-01-06 Clariant Internatl Ltd 微細パターン形成材料および微細パターン形成方法
WO2004111734A1 (ja) * 2003-06-11 2004-12-23 Tokyo Ohka Kogyo Co., Ltd. ポジ型レジスト組成物、レジスト積層体、およびレジストパターン形成方法
US7575853B2 (en) * 2004-04-08 2009-08-18 Tdk Corporation Method of forming thin film pattern and method of forming magnetoresistive element
US7314691B2 (en) * 2004-04-08 2008-01-01 Samsung Electronics Co., Ltd. Mask pattern for semiconductor device fabrication, method of forming the same, method for preparing coating composition for fine pattern formation, and method of fabricating semiconductor device
JP4485241B2 (ja) * 2004-04-09 2010-06-16 Ａｚエレクトロニックマテリアルズ株式会社 水溶性樹脂組成物およびそれを用いたパターン形成方法
JP2005300998A (ja) * 2004-04-13 2005-10-27 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物及びレジストパターン形成方法
JP4279237B2 (ja) * 2004-05-28 2009-06-17 東京応化工業株式会社 ポジ型レジスト組成物及びレジストパターン形成方法
JP2006064851A (ja) * 2004-08-25 2006-03-09 Renesas Technology Corp 微細パターン形成材料、微細レジストパターン形成方法及び電子デバイス装置
JP4679997B2 (ja) * 2004-08-31 2011-05-11 Ａｚエレクトロニックマテリアルズ株式会社 微細パターン形成方法
KR100733920B1 (ko) * 2004-09-17 2007-07-02 주식회사 엘지화학 에칭 레지스트용 잉크 조성물, 이를 이용한 에칭 레지스트패턴 형성 방법 및 미세 유로 형성 방법
KR100618864B1 (ko) * 2004-09-23 2006-08-31 삼성전자주식회사 반도체 소자 제조용 마스크 패턴 및 그 형성 방법과 미세패턴을 가지는 반도체 소자의 제조 방법
US7595141B2 (en) * 2004-10-26 2009-09-29 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern
JP4485913B2 (ja) * 2004-11-05 2010-06-23 東京応化工業株式会社 レジスト組成物の製造方法およびレジスト組成物
KR20070107017A (ko) * 2004-12-30 2007-11-06 어플라이드 머티어리얼스, 인코포레이티드 트리밍과 호환되는 라인 에지 조도 감소 방법
KR100680426B1 (ko) * 2004-12-30 2007-02-08 주식회사 하이닉스반도체 포토레지스트 패턴 코팅용 수용성 조성물 및 이를 이용한미세패턴 형성 방법
US7476926B2 (en) * 2005-01-06 2009-01-13 International Business Machines Corporation Eraseable nonvolatile memory with sidewall storage
JP4498939B2 (ja) * 2005-02-01 2010-07-07 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP4566862B2 (ja) 2005-08-25 2010-10-20 富士通株式会社 レジストパターン厚肉化材料、レジストパターンの形成方法、半導体装置及びその製造方法
KR100811410B1 (ko) * 2005-09-13 2008-03-07 주식회사 하이닉스반도체 레지스트 플로우 공정 및 코팅막 형성 공정을 포함하는반도체 소자의 제조 방법
TW200739672A (en) * 2006-04-03 2007-10-16 Promos Technologies Inc Method for shrinking opening sizes of a photoresist pattern
US8852851B2 (en) 2006-07-10 2014-10-07 Micron Technology, Inc. Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same
JP4869811B2 (ja) * 2006-07-19 2012-02-08 東京応化工業株式会社 微細パターンの形成方法
JP4762829B2 (ja) * 2006-08-23 2011-08-31 東京応化工業株式会社 パターン微細化用被覆形成剤およびそれを用いた微細パターンの形成方法
US8236592B2 (en) * 2007-01-12 2012-08-07 Globalfoundries Inc. Method of forming semiconductor device
US7923200B2 (en) * 2007-04-09 2011-04-12 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern comprising a lactam
JP5069494B2 (ja) * 2007-05-01 2012-11-07 ＡｚエレクトロニックマテリアルズＩｐ株式会社 微細化パターン形成用水溶性樹脂組成物およびこれを用いた微細パターン形成方法
US7878796B1 (en) * 2007-11-10 2011-02-01 La Torre Innovations LLC Colored flame candle
US7989307B2 (en) 2008-05-05 2011-08-02 Micron Technology, Inc. Methods of forming isolated active areas, trenches, and conductive lines in semiconductor structures and semiconductor structures including the same
US10151981B2 (en) 2008-05-22 2018-12-11 Micron Technology, Inc. Methods of forming structures supported by semiconductor substrates
US7745077B2 (en) * 2008-06-18 2010-06-29 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern
US8796155B2 (en) 2008-12-04 2014-08-05 Micron Technology, Inc. Methods of fabricating substrates
US8247302B2 (en) 2008-12-04 2012-08-21 Micron Technology, Inc. Methods of fabricating substrates
US8273634B2 (en) 2008-12-04 2012-09-25 Micron Technology, Inc. Methods of fabricating substrates
KR101672720B1 (ko) * 2009-02-27 2016-11-07 주식회사 동진쎄미켐 포토레지스트 패턴 코팅용 고분자 및 이를 이용한 반도체 소자의 패턴 형성 방법
US8268543B2 (en) 2009-03-23 2012-09-18 Micron Technology, Inc. Methods of forming patterns on substrates
US9330934B2 (en) * 2009-05-18 2016-05-03 Micron Technology, Inc. Methods of forming patterns on substrates
US8575032B2 (en) 2011-05-05 2013-11-05 Micron Technology, Inc. Methods of forming a pattern on a substrate
JP2013014743A (ja) 2011-05-27 2013-01-24 Rohm & Haas Electronic Materials Llc 表面活性添加剤およびこれを含むフォトレジスト組成物
JP5830273B2 (ja) * 2011-06-10 2015-12-09 東京応化工業株式会社 レジストパターン形成方法
US9177794B2 (en) 2012-01-13 2015-11-03 Micron Technology, Inc. Methods of patterning substrates
US8629048B1 (en) 2012-07-06 2014-01-14 Micron Technology, Inc. Methods of forming a pattern on a substrate
EP2945994B1 (de) 2013-01-18 2018-07-11 Basf Se Beschichtungszusammensetzungen auf basis von acryldispersionen
WO2015178462A1 (ja) * 2014-05-21 2015-11-26 旭化成イーマテリアルズ株式会社 感光性樹脂組成物及び回路パターンの形成方法
US9349952B1 (en) * 2014-12-08 2016-05-24 Sony Corporation Methods for fabricating a memory device with an enlarged space between neighboring bottom electrodes
TWI606099B (zh) 2015-06-03 2017-11-21 羅門哈斯電子材料有限公司 圖案處理方法
US11569605B2 (en) 2016-12-20 2023-01-31 Te Connectivity Germany Gmbh Contact device and contact system
DE102016125029B4 (de) * 2016-12-20 2019-03-14 Te Connectivity Germany Gmbh Kontakteinrichtung und Kontaktsystem
CN107146796B (zh) * 2017-04-13 2019-12-31 武汉新芯集成电路制造有限公司 一种提高背面金属栅格分辨率的方法和半导体结构
CN111999981B (zh) * 2020-09-02 2024-02-09 之江实验室 一种智能飞秒激光光刻胶组合物及图案化方法

Family Cites Families (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2541152A (en) * 1948-12-07 1951-02-13 Du Pont N-vinyl alkylene ureas and polymers thereof
US2840566A (en) * 1955-04-08 1958-06-24 Rohm & Haas Preparation of nu-vinyl ethylene urea compounds
US3054783A (en) * 1958-10-22 1962-09-18 Dow Chemical Co Molding grade copolymers and process for preparing the same
BE665997A (de) * 1964-06-26
US3651013A (en) * 1968-06-14 1972-03-21 Asahi Chemical Ind Acrylic fiber
JPS592613B2 (ja) * 1975-02-13 1984-01-19 三菱樹脂株式会社 ヘイハンインサツバンノ セイゾウホウ
JPS6099200A (ja) * 1983-11-02 1985-06-03 Nippon Parkerizing Co Ltd 金属の潤滑処理方法
JPS60115222A (ja) * 1983-11-28 1985-06-21 Tokyo Ohka Kogyo Co Ltd 微細パタ−ン形成方法
US4636561A (en) * 1984-12-11 1987-01-13 Unitika Ltd. Spiroindolinenaphthoxadine photochromic compounds
JPS63108334A (ja) 1986-10-27 1988-05-13 Tokyo Ohka Kogyo Co Ltd コントラスト向上用組成物
JPH01307228A (ja) 1988-06-06 1989-12-12 Hitachi Ltd パターン形成法
JP2723260B2 (ja) 1988-08-30 1998-03-09 株式会社東芝 微細パターン形成方法
ES2103261T3 (es) * 1989-04-24 1997-09-16 Siemens Ag Procedimiento para la generacion de estructuras resistentes a la corrosion.
US5118424A (en) * 1990-11-30 1992-06-02 Ionics Incorporated Thin film composite membranes from vinyl and related nomomers
US5744450A (en) * 1991-03-14 1998-04-28 The Salk Institute For Biological Studies GnRH analogs
JPH04364021A (ja) 1991-06-11 1992-12-16 Sumitomo Electric Ind Ltd 半導体装置の製造方法
JPH05166717A (ja) 1991-12-16 1993-07-02 Mitsubishi Electric Corp 微細パターン形成方法
JP3057879B2 (ja) 1992-02-28 2000-07-04 株式会社日立製作所 半導体装置の製造方法
JP3192505B2 (ja) 1992-11-13 2001-07-30 東京応化工業株式会社 半導体素子製造用パターン形成方法
JP3340493B2 (ja) 1993-02-26 2002-11-05 沖電気工業株式会社 パターン形成方法、位相シフト法用ホトマスクの形成方法
JPH06348013A (ja) 1993-06-02 1994-12-22 Tokyo Ohka Kogyo Co Ltd 感光性樹脂組成物
JPH06348036A (ja) 1993-06-10 1994-12-22 Shin Etsu Chem Co Ltd レジストパターン形成方法
JP3218814B2 (ja) * 1993-08-03 2001-10-15 株式会社日立製作所 半導体装置の製造方法
JPH07166121A (ja) * 1993-12-16 1995-06-27 Tombow Pencil Co Ltd 水性ボールペン用インキ組成物
JP2985688B2 (ja) * 1994-09-21 1999-12-06 信越化学工業株式会社 水溶性膜材料及びパターン形成方法
DE4439459A1 (de) 1994-11-04 1995-05-04 Basf Ag Wäßrige Polymerisatdispersion
GB9526180D0 (en) * 1995-12-21 1996-02-21 Unilever Plc A detergent composition
US5653797A (en) * 1996-04-26 1997-08-05 National Gypsum Company Ready mixed setting-type joint compound and method of making same
JP3071401B2 (ja) * 1996-07-05 2000-07-31 三菱電機株式会社 微細パターン形成材料及びこれを用いた半導体装置の製造方法並びに半導体装置
TW329539B (en) * 1996-07-05 1998-04-11 Mitsubishi Electric Corp The semiconductor device and its manufacturing method
US6107397A (en) 1997-03-24 2000-08-22 Basf Aktiengesellschaft Aqueous copolymer dispersions of water-soluble monomers with N-vinyl groups and hydrophobic monomers
TW372337B (en) * 1997-03-31 1999-10-21 Mitsubishi Electric Corp Material for forming micropattern and manufacturing method of semiconductor using the material and semiconductor apparatus
US6016858A (en) * 1997-06-09 2000-01-25 The Goodyear Tire & Rubber Company Light weight fiberglass belted radial tire
US6117622A (en) * 1997-09-05 2000-09-12 Fusion Systems Corporation Controlled shrinkage of photoresist
JPH11133596A (ja) 1997-10-29 1999-05-21 Hitachi Ltd 光重合性組成物およびそれを用いたパターン形成方法および陰極線管の製造方法
US6180320B1 (en) * 1998-03-09 2001-01-30 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a semiconductor device having a fine pattern, and semiconductor device manufactured thereby
JP2000035672A (ja) 1998-03-09 2000-02-02 Mitsubishi Electric Corp 半導体装置の製造方法及び半導体装置
JP3967466B2 (ja) 1998-06-19 2007-08-29 信越化学工業株式会社 反射防止膜材料
DE19836646A1 (de) 1998-08-13 2000-02-17 Basf Ag Verwendung von N-Vinylpyrrolidon- und Vinylacetat-haltigen Copolymeren als Matrix zur Herstellung von festen, oralen pharmazeutischen und kosmetischen Zubereitungen
JP2000108477A (ja) * 1998-10-09 2000-04-18 Riso Kagaku Corp 孔版印刷方法、装置及び原版
JP2000347414A (ja) 1999-06-01 2000-12-15 Tokyo Ohka Kogyo Co Ltd レジストパターン微細化用塗膜形成剤及びそれを用いた微細パターン形成方法
JP3950584B2 (ja) 1999-06-29 2007-08-01 Ａｚエレクトロニックマテリアルズ株式会社 水溶性樹脂組成物
DE19944073A1 (de) 1999-09-14 2001-03-15 Agfa Gevaert Ag Strahlungsempfindliches Aufzeichnungsmaterial mit Deckschicht
DE19945140B4 (de) * 1999-09-21 2006-02-02 Infineon Technologies Ag Verfahren zur Herstellung einer Maskenschicht mit Öffnungen verkleinerter Breite
JP2001109165A (ja) 1999-10-05 2001-04-20 Clariant (Japan) Kk パターン形成方法
JP4318007B2 (ja) * 1999-10-07 2009-08-19 富士フイルム株式会社 固体撮像素子
US6503693B1 (en) * 1999-12-02 2003-01-07 Axcelis Technologies, Inc. UV assisted chemical modification of photoresist
KR100400331B1 (ko) * 1999-12-02 2003-10-01 주식회사 하이닉스반도체 포토레지스트 오버코팅용 조성물 및 이를 이용한포토레지스트 패턴 형성방법
JP4329216B2 (ja) 2000-03-31 2009-09-09 Ｊｓｒ株式会社 レジストパターン縮小化材料及びそれを使用する微細レジストパターンの形成方法
US6413590B1 (en) * 2000-05-31 2002-07-02 Rexam Graphics Inc. Glossy ink jet medium
US6486058B1 (en) * 2000-10-04 2002-11-26 Integrated Device Technology, Inc. Method of forming a photoresist pattern using WASOOM
JP2002184673A (ja) 2000-12-15 2002-06-28 Matsushita Electric Ind Co Ltd レジストパターン形成方法

Also Published As

Publication number Publication date
CN1211836C (zh) 2005-07-20
EP1489464A2 (de) 2004-12-22
CN100465798C (zh) 2009-03-04
SG139550A1 (en) 2008-02-29
DE60232686D1 (de) 2009-07-30
US20050058950A1 (en) 2005-03-17
EP1489463A2 (de) 2004-12-22
EP1489464B1 (de) 2009-06-17
CN1652023A (zh) 2005-08-10
EP1273974A2 (de) 2003-01-08
SG107601A1 (en) 2004-12-29
EP1489463A3 (de) 2006-09-13
EP1942376B1 (de) 2011-01-12
US20030096903A1 (en) 2003-05-22
EP1942376A2 (de) 2008-07-09
US20030008968A1 (en) 2003-01-09
CN1652025A (zh) 2005-08-10
US6811817B2 (en) 2004-11-02
EP1273974B1 (de) 2009-06-03
US20060099347A1 (en) 2006-05-11
CN1396627A (zh) 2003-02-12
EP1942376A3 (de) 2008-07-23
SG153648A1 (en) 2009-07-29
EP1273974A3 (de) 2003-10-15
EP1489464A3 (de) 2006-09-20
KR100479488B1 (ko) 2005-03-31
KR20030005020A (ko) 2003-01-15
US20030087032A1 (en) 2003-05-08
CN1652024A (zh) 2005-08-10
CN100468211C (zh) 2009-03-11
DE60238957D1 (de) 2011-02-24

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