DE60227597D1 - - Google Patents
Info
- Publication number
- DE60227597D1 DE60227597D1 DE60227597T DE60227597T DE60227597D1 DE 60227597 D1 DE60227597 D1 DE 60227597D1 DE 60227597 T DE60227597 T DE 60227597T DE 60227597 T DE60227597 T DE 60227597T DE 60227597 D1 DE60227597 D1 DE 60227597D1
- Authority
- DE
- Germany
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/846,099 US6646950B2 (en) | 2001-04-30 | 2001-04-30 | High speed decoder for flash memory |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE60227597D1 true DE60227597D1 (enExample) | 2008-08-28 |
Family
ID=25296936
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60227597T Expired - Lifetime DE60227597D1 (enExample) | 2001-04-30 | 2002-03-12 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6646950B2 (enExample) |
| EP (1) | EP1255255B1 (enExample) |
| JP (2) | JP2003016793A (enExample) |
| KR (1) | KR100758885B1 (enExample) |
| DE (1) | DE60227597D1 (enExample) |
| TW (1) | TW550577B (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1351397A3 (en) | 2001-11-27 | 2005-03-02 | Texas Instruments Incorporated | All-digital frequency synthesis with capacitive re-introduction of dithered tuning information |
| US6809960B2 (en) * | 2002-08-26 | 2004-10-26 | Micron Technology, Inc. | High speed low voltage driver |
| US6888754B2 (en) * | 2003-01-31 | 2005-05-03 | Taiwan Semiconductor Manufacturing Company | Nonvolatile semiconductor memory array with byte-program, byte-erase, and byte-read capabilities |
| US6778437B1 (en) * | 2003-08-07 | 2004-08-17 | Advanced Micro Devices, Inc. | Memory circuit for providing word line redundancy in a memory sector |
| JP2005302139A (ja) * | 2004-04-09 | 2005-10-27 | Nec Electronics Corp | 半導体記憶装置 |
| US7002492B2 (en) * | 2004-07-07 | 2006-02-21 | Seagate Technology Llc | High rate running digital sum-restricted code |
| WO2006090442A1 (ja) * | 2005-02-23 | 2006-08-31 | Spansion Llc | 半導体装置およびその制御方法 |
| US7126862B2 (en) * | 2005-03-08 | 2006-10-24 | Spansion Llc | Decoder for memory device |
| US7428172B2 (en) * | 2006-07-17 | 2008-09-23 | Freescale Semiconductor, Inc. | Concurrent programming and program verification of floating gate transistor |
| US7583554B2 (en) * | 2007-03-02 | 2009-09-01 | Freescale Semiconductor, Inc. | Integrated circuit fuse array |
| US7787323B2 (en) * | 2007-04-27 | 2010-08-31 | Freescale Semiconductor, Inc. | Level detect circuit |
| KR101309113B1 (ko) | 2007-08-23 | 2013-09-16 | 삼성전자주식회사 | 리드 와일 라이트 동작 시 발생하는 리드 전압의 변동을최소화할 수 있는 노아 플래시 메모리 장치 및 방법 |
| US7672163B2 (en) * | 2007-09-14 | 2010-03-02 | Sandisk Corporation | Control gate line architecture |
| JP5398520B2 (ja) * | 2009-12-25 | 2014-01-29 | 株式会社東芝 | ワード線駆動回路 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6129488A (ja) * | 1984-07-20 | 1986-02-10 | Hitachi Micro Comput Eng Ltd | ダイナミツク型ｒａｍ |
| JPH0194591A (ja) * | 1987-10-06 | 1989-04-13 | Fujitsu Ltd | 半導体メモリ |
| JPH05120881A (ja) | 1991-10-24 | 1993-05-18 | Mitsubishi Electric Corp | 半導体記憶装置 |
| JPH0745074A (ja) | 1993-07-29 | 1995-02-14 | Mitsubishi Electric Corp | 半導体記憶装置 |
| KR960011206B1 (ko) | 1993-11-09 | 1996-08-21 | 삼성전자 주식회사 | 반도체메모리장치의 워드라인구동회로 |
| JP3478953B2 (ja) * | 1997-09-03 | 2003-12-15 | Ｎｅｃエレクトロニクス株式会社 | 半導体記憶装置 |
| JPH11317074A (ja) * | 1998-04-30 | 1999-11-16 | Nec Corp | ワード線制御回路 |
| DE19841445C2 (de) * | 1998-09-10 | 2002-04-25 | Infineon Technologies Ag | Halbleiter-Schaltungsanordnung |
| US6026047A (en) * | 1998-11-03 | 2000-02-15 | Samsung Electronics Co., Ltd. | Integrated circuit memory device with hierarchical work line structure |
| US6255900B1 (en) * | 1998-11-18 | 2001-07-03 | Macronix International Co., Ltd. | Rapid on chip voltage generation for low power integrated circuits |
| EP1151365B1 (en) * | 1998-11-18 | 2004-05-12 | Macronix International Co., Ltd. | Rapid on chip voltage generation for low power integrated circuits |
| KR20000045361A (ko) * | 1998-12-30 | 2000-07-15 | 김영환 | 워드라인 구동장치 |
| JP3940513B2 (ja) * | 1999-01-11 | 2007-07-04 | 株式会社東芝 | 半導体記憶装置 |
| JP3296319B2 (ja) * | 1999-03-02 | 2002-06-24 | 日本電気株式会社 | ワード線駆動回路及び半導体記憶装置 |
| KR100381962B1 (ko) * | 2000-08-07 | 2003-05-01 | 삼성전자주식회사 | 비휘발성 메모리 장치의 로우 디코더 |
| US6347052B1 (en) * | 2000-08-31 | 2002-02-12 | Advanced Micro Devices Inc. | Word line decoding architecture in a flash memory |
-
2001
- 2001-04-30 US US09/846,099 patent/US6646950B2/en not_active Expired - Fee Related
-
2002
- 2002-02-21 TW TW091103012A patent/TW550577B/zh active
- 2002-03-12 EP EP02251716A patent/EP1255255B1/en not_active Expired - Lifetime
- 2002-03-12 DE DE60227597T patent/DE60227597D1/de not_active Expired - Lifetime
- 2002-04-09 KR KR1020020019157A patent/KR100758885B1/ko not_active Expired - Fee Related
- 2002-04-26 JP JP2002127331A patent/JP2003016793A/ja active Pending
-
2007
- 2007-08-17 JP JP2007213161A patent/JP2007323808A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US20020159296A1 (en) | 2002-10-31 |
| EP1255255B1 (en) | 2008-07-16 |
| TW550577B (en) | 2003-09-01 |
| JP2003016793A (ja) | 2003-01-17 |
| JP2007323808A (ja) | 2007-12-13 |
| KR20030009101A (ko) | 2003-01-29 |
| EP1255255A2 (en) | 2002-11-06 |
| EP1255255A3 (en) | 2004-06-02 |
| KR100758885B1 (ko) | 2007-09-19 |
| US6646950B2 (en) | 2003-11-11 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8327 | Change in the person/name/address of the patent owner |
Owner name: FUJITSU MICROELECTRONICS LTD., TOKYO, JP |
|
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: FUJITSU SEMICONDUCTOR LTD., YOKOHAMA, KANAGAWA, JP |
|
| 8328 | Change in the person/name/address of the agent |
Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE |