DE60227143D1 - Apparat für geladene Teilchen mit Aberrationskorrektur - Google Patents

Apparat für geladene Teilchen mit Aberrationskorrektur

Info

Publication number
DE60227143D1
DE60227143D1 DE60227143T DE60227143T DE60227143D1 DE 60227143 D1 DE60227143 D1 DE 60227143D1 DE 60227143 T DE60227143 T DE 60227143T DE 60227143 T DE60227143 T DE 60227143T DE 60227143 D1 DE60227143 D1 DE 60227143D1
Authority
DE
Germany
Prior art keywords
charged particles
aberration correction
aberration
correction
charged
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60227143T
Other languages
English (en)
Inventor
Miyuki Matsuya
Hiroyoshi Kazumori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jeol Ltd
Original Assignee
Jeol Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jeol Ltd filed Critical Jeol Ltd
Application granted granted Critical
Publication of DE60227143D1 publication Critical patent/DE60227143D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/151—Electrostatic means
    • H01J2237/1516—Multipoles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153—Correcting image defects, e.g. stigmators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153—Correcting image defects, e.g. stigmators
    • H01J2237/1534—Aberrations

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Electron Beam Exposure (AREA)
DE60227143T 2001-11-20 2002-11-18 Apparat für geladene Teilchen mit Aberrationskorrektur Expired - Lifetime DE60227143D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001354335A JP3914750B2 (ja) 2001-11-20 2001-11-20 収差補正装置を備えた荷電粒子線装置

Publications (1)

Publication Number Publication Date
DE60227143D1 true DE60227143D1 (de) 2008-07-31

Family

ID=19166212

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60227143T Expired - Lifetime DE60227143D1 (de) 2001-11-20 2002-11-18 Apparat für geladene Teilchen mit Aberrationskorrektur

Country Status (4)

Country Link
US (1) US6852983B2 (de)
EP (1) EP1313125B1 (de)
JP (1) JP3914750B2 (de)
DE (1) DE60227143D1 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6924488B2 (en) * 2002-06-28 2005-08-02 Jeol Ltd. Charged-particle beam apparatus equipped with aberration corrector
JP4328192B2 (ja) * 2003-12-12 2009-09-09 日本電子株式会社 荷電粒子光学系における多極場発生装置および収差補正装置
JP4248387B2 (ja) * 2003-12-17 2009-04-02 日本電子株式会社 収差自動補正方法及び装置
JP2005183085A (ja) * 2003-12-17 2005-07-07 Jeol Ltd 収差自動補正方法及び装置
JP4607558B2 (ja) * 2004-11-22 2011-01-05 日本電子株式会社 荷電粒子光学装置及び収差補正方法
JP2006216396A (ja) 2005-02-04 2006-08-17 Hitachi High-Technologies Corp 荷電粒子線装置
TWI415162B (zh) 2005-03-03 2013-11-11 Toshiba Kk 映像投影型電子線裝置及使用該裝置之缺陷檢查系統
US20090014649A1 (en) * 2005-03-22 2009-01-15 Ebara Corporation Electron beam apparatus
JP4931359B2 (ja) * 2005-03-22 2012-05-16 株式会社荏原製作所 電子線装置
JP4895525B2 (ja) * 2005-04-11 2012-03-14 株式会社日立ハイテクノロジーズ 走査透過電子顕微鏡装置
JP4708854B2 (ja) * 2005-05-13 2011-06-22 株式会社日立ハイテクノロジーズ 荷電粒子線装置
JP4705812B2 (ja) * 2005-07-04 2011-06-22 日本電子株式会社 収差補正装置を備えた荷電粒子ビーム装置
US8067732B2 (en) 2005-07-26 2011-11-29 Ebara Corporation Electron beam apparatus
JP2007128656A (ja) * 2005-11-01 2007-05-24 Jeol Ltd 収差補正装置を備えた荷電粒子ビーム装置
EP1783811A3 (de) * 2005-11-02 2008-02-27 FEI Company Korrektor zur Korrektion von chromatischen Aberrationen in einem korpuskularoptiachen Apparat
JP2007335125A (ja) 2006-06-13 2007-12-27 Ebara Corp 電子線装置
JP4881661B2 (ja) * 2006-06-20 2012-02-22 株式会社日立ハイテクノロジーズ 荷電粒子線装置
JP2008293986A (ja) * 2006-07-26 2008-12-04 Mamoru Nakasuji 電子線装置
US7659507B2 (en) * 2006-10-02 2010-02-09 Jeol Ltd. Automatic method of axial adjustments in electron beam system
RU2362234C1 (ru) 2007-10-03 2009-07-20 Вячеслав Данилович Саченко Корпускулярно-оптическая система формирования изображения (варианты)
JP5438937B2 (ja) * 2008-09-05 2014-03-12 株式会社日立ハイテクノロジーズ 荷電粒子ビーム装置
EP2166557A1 (de) * 2008-09-22 2010-03-24 FEI Company Verfahren zur Berichtigung von Verzerrungen in einer teilchenoptischen Vorrichtung
JP5237734B2 (ja) * 2008-09-24 2013-07-17 日本電子株式会社 収差補正装置および該収差補正装置を備える荷電粒子線装置
US8320178B2 (en) * 2009-07-02 2012-11-27 Actel Corporation Push-pull programmable logic device cell
DE102009052392A1 (de) * 2009-11-09 2011-12-15 Carl Zeiss Nts Gmbh SACP-Verfahren und teilchenoptisches System zur Ausführung eines solchen Verfahrens
EP2325862A1 (de) * 2009-11-18 2011-05-25 Fei Company Korrektor für axiale Aberrationen einer teilchenoptischen Linse
DE102011009954A1 (de) * 2011-02-01 2012-08-02 Ceos Corrected Electron Optical Systems Gmbh Korrektor
EP2511936B1 (de) 2011-04-13 2013-10-02 Fei Company Verzerrungsfreie Stigmation eines TEM
JP5204277B2 (ja) * 2011-08-26 2013-06-05 株式会社日立ハイテクノロジーズ 荷電粒子線装置
US9257260B2 (en) 2013-04-27 2016-02-09 Kla-Tencor Corporation Method and system for adaptively scanning a sample during electron beam inspection
JP6077960B2 (ja) * 2013-07-24 2017-02-08 日本電子株式会社 球面収差補正装置、球面収差補正方法、および荷電粒子線装置
WO2017193061A1 (en) * 2016-05-06 2017-11-09 Weiwei Xu Miniature electron beam lens array use as common platform ebeam wafer metrology, imaging and material analysis system
US10090131B2 (en) * 2016-12-07 2018-10-02 Kla-Tencor Corporation Method and system for aberration correction in an electron beam system
CN111164725B (zh) * 2017-09-29 2023-08-29 Asml荷兰有限公司 用于带电粒子束检查的样本预充电方法和设备

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6040137B2 (ja) 1980-08-15 1985-09-09 日本電子株式会社 走査電子顕微鏡
JPS59184440A (ja) 1983-04-04 1984-10-19 Hitachi Ltd 走査電子顕微鏡
JPS6216160A (ja) 1985-07-16 1987-01-24 Chiyuuwa Giken Kk ドツトマトリツクスプリンタヘツド
JPH01159943A (ja) 1987-12-15 1989-06-22 Jeol Ltd 電子顕微鏡等における電子ビーム開き角制御装置
JPH01236563A (ja) * 1988-03-17 1989-09-21 Jeol Ltd 電子顕微鏡における多目的開き角制御装置
JP3056757B2 (ja) 1989-12-18 2000-06-26 株式会社日立製作所 電界放出型電子顕微鏡
JPH03289035A (ja) * 1990-04-03 1991-12-19 Jeol Ltd 電子顕微鏡における収差及び開き角補正装置
JPH0562629A (ja) * 1991-01-11 1993-03-12 Jeol Ltd 電子顕微鏡におけるフオーカス調整方式
US5866905A (en) 1991-05-15 1999-02-02 Hitachi, Ltd. Electron microscope
US5552602A (en) 1991-05-15 1996-09-03 Hitachi, Ltd. Electron microscope
JPH05205695A (ja) * 1992-01-28 1993-08-13 Hitachi Ltd 多段多重電極及び質量分析装置
JP3730263B2 (ja) 1992-05-27 2005-12-21 ケーエルエー・インストルメンツ・コーポレーション 荷電粒子ビームを用いた自動基板検査の装置及び方法
US5477049A (en) 1994-01-21 1995-12-19 Seiko Instruments Inc. Particle analysis method
JP2000048752A (ja) * 1998-05-27 2000-02-18 Jeol Ltd 電子ビ―ム検査装置とその調整用試料と調整方法およびコンタクトホ―ルの検査方法
US6426501B1 (en) * 1998-05-27 2002-07-30 Jeol Ltd. Defect-review SEM, reference sample for adjustment thereof, method for adjustment thereof, and method of inspecting contact holes
US6525328B1 (en) * 1999-07-23 2003-02-25 Kabushiki Kaisha Toshiba Electron beam lithography system and pattern writing method
JP2001118765A (ja) * 1999-10-15 2001-04-27 Nikon Corp 荷電粒子線露光装置、荷電粒子線露光装置の調整方法及び半導体デバイスの製造方法
US6723997B2 (en) * 2001-10-26 2004-04-20 Jeol Ltd. Aberration corrector for instrument utilizing charged-particle beam
US6924488B2 (en) * 2002-06-28 2005-08-02 Jeol Ltd. Charged-particle beam apparatus equipped with aberration corrector

Also Published As

Publication number Publication date
EP1313125B1 (de) 2008-06-18
US20030122076A1 (en) 2003-07-03
JP3914750B2 (ja) 2007-05-16
EP1313125A1 (de) 2003-05-21
JP2003157785A (ja) 2003-05-30
US6852983B2 (en) 2005-02-08

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