DE602007013857D1 - Projektionsobjektive mit Spiegelelementen mit Reflexbeschichtungen - Google Patents

Projektionsobjektive mit Spiegelelementen mit Reflexbeschichtungen

Info

Publication number
DE602007013857D1
DE602007013857D1 DE602007013857T DE602007013857T DE602007013857D1 DE 602007013857 D1 DE602007013857 D1 DE 602007013857D1 DE 602007013857 T DE602007013857 T DE 602007013857T DE 602007013857 T DE602007013857 T DE 602007013857T DE 602007013857 D1 DE602007013857 D1 DE 602007013857D1
Authority
DE
Germany
Prior art keywords
mirror
elements
pupil
coating
reflective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602007013857T
Other languages
English (en)
Inventor
Danny Dr Chan
Hans-Juergen Dr Mann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
Original Assignee
Carl Zeiss SMT GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Publication of DE602007013857D1 publication Critical patent/DE602007013857D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0891—Ultraviolet [UV] mirrors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0275—Photolithographic processes using lasers
DE602007013857T 2006-12-04 2007-12-04 Projektionsobjektive mit Spiegelelementen mit Reflexbeschichtungen Active DE602007013857D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US87250306P 2006-12-04 2006-12-04
EP06025020A EP1930771A1 (de) 2006-12-04 2006-12-04 Projektionsobjektive mit Spiegelelementen mit Reflexbeschichtungen

Publications (1)

Publication Number Publication Date
DE602007013857D1 true DE602007013857D1 (de) 2011-05-26

Family

ID=37964955

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602007013857T Active DE602007013857D1 (de) 2006-12-04 2007-12-04 Projektionsobjektive mit Spiegelelementen mit Reflexbeschichtungen

Country Status (8)

Country Link
US (1) US8194230B2 (de)
EP (2) EP1930771A1 (de)
JP (2) JP5601694B2 (de)
KR (2) KR101538163B1 (de)
CN (1) CN101221279B (de)
AT (1) ATE505749T1 (de)
DE (1) DE602007013857D1 (de)
TW (1) TWI430044B (de)

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US7929114B2 (en) * 2007-01-17 2011-04-19 Carl Zeiss Smt Gmbh Projection optics for microlithography
US7929115B2 (en) * 2007-06-01 2011-04-19 Carl Zeiss Smt Gmbh Projection objective and projection exposure apparatus for microlithography
KR101645142B1 (ko) 2007-10-26 2016-08-02 칼 짜이스 에스엠티 게엠베하 결상 광학 시스템 및 이러한 유형의 결상 광학 시스템을 구비하는 마이크로리소그래피용 투영 노광 장치
DE102007051671A1 (de) 2007-10-26 2009-05-07 Carl Zeiss Smt Ag Abbildende Optik sowie Projektionsbelichtungsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik
KR101592136B1 (ko) 2007-10-26 2016-02-04 칼 짜이스 에스엠티 게엠베하 결상 광학 시스템 및 이러한 유형의 결상 광학 시스템을 갖는 마이크로리소그래피용 투영 노광 장치
KR101656534B1 (ko) 2008-03-20 2016-09-09 칼 짜이스 에스엠티 게엠베하 마이크로리소그래피용 투영 대물렌즈
US9285690B2 (en) 2008-08-15 2016-03-15 Asml Netherlands B.V. Mirror, lithographic apparatus and device manufacturing method
DE102009008644A1 (de) * 2009-02-12 2010-11-18 Carl Zeiss Smt Ag Abbildende Optik sowie Projektionsbelichtungsanlage für die Mikrolithografie mit einer derartigen abbildenden Optik
CN102422225B (zh) 2009-03-06 2014-07-09 卡尔蔡司Smt有限责任公司 用于微光刻的照明光学系统与光学系统
CN102449526B (zh) * 2009-03-30 2014-05-07 卡尔蔡司Smt有限责任公司 成像光学部件以及具有此类型的成像光学部件的用于微光刻的投射曝光设备
DE102009047179B8 (de) 2009-11-26 2016-08-18 Carl Zeiss Smt Gmbh Projektionsobjektiv
DE102011005144A1 (de) * 2010-03-17 2011-09-22 Carl Zeiss Smt Gmbh Reflektives optisches Element, Projektionssystem und Projektionsbelichtungsanlage
US8274734B2 (en) * 2010-10-08 2012-09-25 Raytheon Company Anamorphic relayed imager having multiple rotationally symmetric powered mirrors
WO2011133400A2 (en) * 2010-04-19 2011-10-27 Drexel University Two mirror system
US8317344B2 (en) 2010-06-08 2012-11-27 Nikon Corporation High NA annular field catoptric projection optics using Zernike polynomial mirror surfaces
DE102010040811A1 (de) 2010-09-15 2012-03-15 Carl Zeiss Smt Gmbh Abbildende Optik
DE102011080437A1 (de) * 2010-09-30 2012-04-05 Carl Zeiss Smt Gmbh Abbildendes optisches System für die Mikrolithographie
DE102010043498A1 (de) 2010-11-05 2012-05-10 Carl Zeiss Smt Gmbh Projektionsobjektiv einer für EUV ausgelegten mikrolithographischen Projektionsbelichtungsanlage, sowie Verfahren zum optischen Justieren eines Projektionsobjektives
DE102010062597A1 (de) * 2010-12-08 2012-06-14 Carl Zeiss Smt Gmbh Reflektives optisches Abbildungssystem
DE102011075579A1 (de) * 2011-05-10 2012-11-15 Carl Zeiss Smt Gmbh Spiegel und Projektionsbelichtungsanlage für die Mikrolithographie mit einem solchen Spiegel
CN102402135B (zh) * 2011-12-07 2013-06-05 北京理工大学 一种极紫外光刻投影物镜设计方法
KR101930926B1 (ko) * 2012-01-19 2019-03-11 수프리야 자이스왈 리소그래피 및 다른 적용분야에서 극자외 방사선을 이용하는 재료, 성분 및 사용을 위한 방법
CN102540435A (zh) * 2012-02-07 2012-07-04 中国科学院光电技术研究所 一种反射型投影光学系统
DE102012205615A1 (de) 2012-04-04 2013-10-10 Carl Zeiss Smt Gmbh Beschichtungsverfahren, Beschichtungsanlage und optisches Element mit Beschichtung
DE102012222451A1 (de) 2012-12-06 2014-06-26 Carl Zeiss Smt Gmbh Reflektives optisches Element für die EUV-Lithographie
DE102012222466A1 (de) 2012-12-06 2014-06-12 Carl Zeiss Smt Gmbh Reflektives optisches Element für die EUV-Lithographie
US8963110B2 (en) 2013-06-22 2015-02-24 Kla-Tencor Corporation Continuous generation of extreme ultraviolet light
WO2015001805A1 (ja) * 2013-07-05 2015-01-08 株式会社ニコン 多層膜反射鏡、多層膜反射鏡の製造方法、投影光学系、露光装置、デバイスの製造方法
DE102013219583A1 (de) * 2013-09-27 2015-04-02 Carl Zeiss Smt Gmbh Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
DE102014215970A1 (de) 2014-08-12 2016-02-18 Carl Zeiss Smt Gmbh Optisches System einer mikrolithographischen Projektionsbelichtungsanlage
WO2015185374A1 (de) 2014-06-06 2015-12-10 Carl Zeiss Smt Gmbh Optisches system einer mikrolithographischen projektionsbelichtungsanlage
DE102014223811B4 (de) * 2014-11-21 2016-09-29 Carl Zeiss Smt Gmbh Abbildende Optik für die EUV-Projektionslithographie, Projektionsbelichtungsanlage und Verfahren zur Herstellung eines strukturierten Bauteils
DE102016201564A1 (de) * 2016-02-02 2017-08-03 Carl Zeiss Smt Gmbh Verfahren zur Herstellung eines reflektiven optischen Elements und reflektives optisches Element
US10468149B2 (en) * 2017-02-03 2019-11-05 Globalfoundries Inc. Extreme ultraviolet mirrors and masks with improved reflectivity
DE102017202802A1 (de) * 2017-02-21 2018-08-23 Carl Zeiss Smt Gmbh Objektiv und optisches System mit einem solchen Objektiv
DE102019214979A1 (de) 2019-09-30 2021-04-01 Carl Zeiss Smt Gmbh Messvorrichtung zur interferometrischen Bestimmung einer Oberflächenform

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AT412184B (de) 2001-03-13 2004-11-25 Blum Gmbh Julius Fluiddämpfer
DE3752314T2 (de) 1986-07-11 2000-09-14 Canon Kk Verkleinerndes Projektionsbelichtungssystem des Reflexionstyps für Röntgenstrahlung
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GB0106016D0 (en) * 2001-03-12 2001-05-02 Esselte Nv Printing Device
EP1282011B1 (de) * 2001-08-01 2006-11-22 Carl Zeiss SMT AG Reflektives Projektionsobjektiv für EUV-Photolithographie
JP2003233001A (ja) * 2002-02-07 2003-08-22 Canon Inc 反射型投影光学系、露光装置及びデバイス製造方法
US7522335B2 (en) * 2004-03-29 2009-04-21 Intel Corporation Broad-angle multilayer mirror design
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JP4498060B2 (ja) * 2004-08-18 2010-07-07 キヤノン株式会社 投影光学系、露光装置及び光学素子の製造方法
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KR100962911B1 (ko) 2005-09-13 2010-06-10 칼 짜이스 에스엠테 아게 마이크로리소그라피 투영 광학 시스템, 디바이스 제작 방법 및 광학 표면을 설계하기 위한 방법

Also Published As

Publication number Publication date
EP1930772A1 (de) 2008-06-11
KR20080051099A (ko) 2008-06-10
KR101538163B1 (ko) 2015-07-20
CN101221279B (zh) 2012-07-04
EP1930771A1 (de) 2008-06-11
US8194230B2 (en) 2012-06-05
JP2008203820A (ja) 2008-09-04
CN101221279A (zh) 2008-07-16
KR20150043279A (ko) 2015-04-22
TW200912548A (en) 2009-03-16
KR101630122B1 (ko) 2016-06-21
JP2014041379A (ja) 2014-03-06
TWI430044B (zh) 2014-03-11
JP5601694B2 (ja) 2014-10-08
ATE505749T1 (de) 2011-04-15
EP1930772B1 (de) 2011-04-13
US20080165415A1 (en) 2008-07-10

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