DE602007010473D1 - Quarzglaskomponente für halbleiterfabrikation und herstellungsverfahren dafür - Google Patents

Quarzglaskomponente für halbleiterfabrikation und herstellungsverfahren dafür

Info

Publication number
DE602007010473D1
DE602007010473D1 DE602007010473T DE602007010473T DE602007010473D1 DE 602007010473 D1 DE602007010473 D1 DE 602007010473D1 DE 602007010473 T DE602007010473 T DE 602007010473T DE 602007010473 T DE602007010473 T DE 602007010473T DE 602007010473 D1 DE602007010473 D1 DE 602007010473D1
Authority
DE
Germany
Prior art keywords
manufacturing
quartz glass
semiconductor fabrication
glass component
fabrication
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602007010473T
Other languages
English (en)
Inventor
Juergen Weber
Tatsuhiro Sato
Ralf Schneider
Achim Hofmann
Christian Gebauer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Heraeus Quarzglas GmbH and Co KG
Shin Etsu Quartz Products Co Ltd
Original Assignee
Heraeus Quarzglas GmbH and Co KG
Shin Etsu Quartz Products Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heraeus Quarzglas GmbH and Co KG, Shin Etsu Quartz Products Co Ltd filed Critical Heraeus Quarzglas GmbH and Co KG
Publication of DE602007010473D1 publication Critical patent/DE602007010473D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/06—Glass compositions containing silica with more than 90% silica by weight, e.g. quartz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
    • C03B19/06—Other methods of shaping glass by sintering, e.g. by cold isostatic pressing of powders and subsequent sintering, by hot pressing of powders, by sintering slurries or dispersions not undergoing a liquid phase reaction
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
    • C03B19/06—Other methods of shaping glass by sintering, e.g. by cold isostatic pressing of powders and subsequent sintering, by hot pressing of powders, by sintering slurries or dispersions not undergoing a liquid phase reaction
    • C03B19/066—Other methods of shaping glass by sintering, e.g. by cold isostatic pressing of powders and subsequent sintering, by hot pressing of powders, by sintering slurries or dispersions not undergoing a liquid phase reaction for the production of quartz or fused silica articles
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B20/00—Processes specially adapted for the production of quartz or fused silica articles, not otherwise provided for
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C4/00—Compositions for glass with special properties
    • C03C4/20—Compositions for glass with special properties for chemical resistant glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00—Type of glass produced
    • C03B2201/06—Doped silica-based glasses
    • C03B2201/07—Impurity concentration specified
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00—Type of glass produced
    • C03B2201/06—Doped silica-based glasses
    • C03B2201/07—Impurity concentration specified
    • C03B2201/075—Hydroxyl ion (OH)
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00—Type of glass produced
    • C03B2201/06—Doped silica-based glasses
    • C03B2201/20—Doped silica-based glasses doped with non-metals other than boron or fluorine
    • C03B2201/24—Doped silica-based glasses doped with non-metals other than boron or fluorine doped with nitrogen, e.g. silicon oxy-nitride glasses
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00—Type of glass produced
    • C03B2201/06—Doped silica-based glasses
    • C03B2201/30—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi
    • C03B2201/34—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi doped with rare earth metals, i.e. with Sc, Y or lanthanides, e.g. for laser-amplifiers
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00—Type of glass produced
    • C03B2201/06—Doped silica-based glasses
    • C03B2201/30—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi
    • C03B2201/34—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi doped with rare earth metals, i.e. with Sc, Y or lanthanides, e.g. for laser-amplifiers
    • C03B2201/36—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi doped with rare earth metals, i.e. with Sc, Y or lanthanides, e.g. for laser-amplifiers doped with rare earth metals and aluminium, e.g. Er-Al co-doped
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2201/00—Glass compositions
    • C03C2201/06—Doped silica-based glasses
    • C03C2201/20—Doped silica-based glasses containing non-metals other than boron or halide
    • C03C2201/23—Doped silica-based glasses containing non-metals other than boron or halide containing hydroxyl groups
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2201/00—Glass compositions
    • C03C2201/06—Doped silica-based glasses
    • C03C2201/20—Doped silica-based glasses containing non-metals other than boron or halide
    • C03C2201/24—Doped silica-based glasses containing non-metals other than boron or halide containing nitrogen, e.g. silicon oxy-nitride glasses
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2201/00—Glass compositions
    • C03C2201/06—Doped silica-based glasses
    • C03C2201/30—Doped silica-based glasses containing metals
    • C03C2201/34—Doped silica-based glasses containing metals containing rare earth metals
    • C03C2201/3411—Yttrium
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2201/00—Glass compositions
    • C03C2201/06—Doped silica-based glasses
    • C03C2201/30—Doped silica-based glasses containing metals
    • C03C2201/34—Doped silica-based glasses containing metals containing rare earth metals
    • C03C2201/3435—Neodymium
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2203/00—Production processes
    • C03C2203/10—Melting processes
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2203/00—Production processes
    • C03C2203/50—After-treatment
    • C03C2203/52—Heat-treatment
    • C03C2203/54—Heat-treatment in a dopant containing atmosphere

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Glass Compositions (AREA)
  • Glass Melting And Manufacturing (AREA)
DE602007010473T 2006-09-13 2007-09-04 Quarzglaskomponente für halbleiterfabrikation und herstellungsverfahren dafür Active DE602007010473D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006043738A DE102006043738B4 (de) 2006-09-13 2006-09-13 Bauteil aus Quarzglas zum Einsatz bei der Halbleiterfertigung und Verfahren zur Herstellung desselben
PCT/EP2007/059217 WO2008031742A2 (en) 2006-09-13 2007-09-04 Component of quartz glass for use in semiconductor manufacture and method for producing the same

Publications (1)

Publication Number Publication Date
DE602007010473D1 true DE602007010473D1 (de) 2010-12-23

Family

ID=39104874

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102006043738A Expired - Fee Related DE102006043738B4 (de) 2006-09-13 2006-09-13 Bauteil aus Quarzglas zum Einsatz bei der Halbleiterfertigung und Verfahren zur Herstellung desselben
DE602007010473T Active DE602007010473D1 (de) 2006-09-13 2007-09-04 Quarzglaskomponente für halbleiterfabrikation und herstellungsverfahren dafür

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE102006043738A Expired - Fee Related DE102006043738B4 (de) 2006-09-13 2006-09-13 Bauteil aus Quarzglas zum Einsatz bei der Halbleiterfertigung und Verfahren zur Herstellung desselben

Country Status (9)

Country Link
US (1) US8017536B2 (de)
EP (1) EP2061726B1 (de)
JP (1) JP5502479B2 (de)
KR (1) KR101044771B1 (de)
CN (1) CN101426744B (de)
DE (2) DE102006043738B4 (de)
IL (1) IL194990A (de)
TW (1) TWI393689B (de)
WO (1) WO2008031742A2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7718559B2 (en) * 2007-04-20 2010-05-18 Applied Materials, Inc. Erosion resistance enhanced quartz used in plasma etch chamber
DE102008033946B3 (de) * 2008-07-19 2009-09-10 Heraeus Quarzglas Gmbh & Co. Kg Quarzglastiegel mit einer Stickstoffdotierung und Verfahren zur Herstellung eines derartigen Tiegels
GB201011582D0 (en) 2010-07-09 2010-08-25 Heraeus Quartz Uk Ltd High purity synthetic silica and items such as semiconductor jigs manufactured therefrom
JP5599355B2 (ja) * 2011-03-31 2014-10-01 富士フイルム株式会社 モールドの製造方法
DE102012008175A1 (de) * 2012-04-26 2013-10-31 Heraeus Quarzglas Gmbh & Co. Kg Verfahren zur Herstellung eines SiO2-Granulats
TWI794150B (zh) * 2015-12-18 2023-03-01 德商何瑞斯廓格拉斯公司 自二氧化矽顆粒製備石英玻璃體
US11053152B2 (en) 2015-12-18 2021-07-06 Heraeus Quarzglas Gmbh & Co. Kg Spray granulation of silicon dioxide in the preparation of quartz glass
JP6881776B2 (ja) 2015-12-18 2021-06-02 ヘレウス クワルツグラス ゲーエムベーハー ウント コンパニー カーゲー 不透明石英ガラス体の調製
WO2017103123A2 (de) 2015-12-18 2017-06-22 Heraeus Quarzglas Gmbh & Co. Kg Herstellung von quarzglaskörpern mit taupunktkontrolle im schmelzofen
US10730780B2 (en) 2015-12-18 2020-08-04 Heraeus Quarzglas Gmbh & Co. Kg Preparation of a quartz glass body in a multi-chamber oven
WO2017103120A1 (de) 2015-12-18 2017-06-22 Heraeus Quarzglas Gmbh & Co. Kg Herstellung einer synthetischen quarzglaskörnung
US11339076B2 (en) 2015-12-18 2022-05-24 Heraeus Quarzglas Gmbh & Co. Kg Preparation of carbon-doped silicon dioxide granulate as an intermediate in the preparation of quartz glass
KR20180095619A (ko) 2015-12-18 2018-08-27 헤래우스 크바르츠글라스 게엠베하 ＆ 컴파니 케이지 실리카 유리 제조 동안 규소 함량의 증가
WO2017103115A2 (de) 2015-12-18 2017-06-22 Heraeus Quarzglas Gmbh & Co. Kg Herstellung eines quarzglaskörpers in einem schmelztiegel aus refraktärmetall
TWI681940B (zh) * 2016-06-03 2020-01-11 日商闊斯泰股份有限公司 二氧化矽玻璃構件及其製造方法
EP3381870B1 (de) 2017-03-30 2020-12-23 Heraeus Quarzglas GmbH & Co. KG Verfahren zur herstellung eines bauteils aus seltenerdmetalldotiertem quarzglas
JP2022165905A (ja) * 2021-04-20 2022-11-01 東ソー株式会社 ガラス及びその製造方法、これを用いた部材並びに装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0688799B2 (ja) * 1985-09-06 1994-11-09 日本電信電話株式会社 石英ガラスの製造方法および製造装置
US5192351A (en) * 1991-12-17 1993-03-09 Alfred University Production of dehydroxylated glass
CN1035608C (zh) * 1992-01-21 1997-08-13 亓飞 无羟基透明石英玻璃的连续电熔法
JP3268049B2 (ja) * 1993-01-26 2002-03-25 東芝セラミックス株式会社 石英ガラス材及びその製造法
US5772714A (en) * 1995-01-25 1998-06-30 Shin-Etsu Quartz Products Co., Ltd. Process for producing opaque silica glass
JPH10114532A (ja) * 1996-10-04 1998-05-06 Toshiba Ceramics Co Ltd 石英ガラス質半導体熱処理用治具の製造方法
DE19962449C2 (de) * 1999-12-22 2003-09-25 Heraeus Quarzglas Quarzglastiegel und Verfahren für seine Herstellung
US6887576B2 (en) * 2000-08-23 2005-05-03 Herseus Quarzglas GmbH & Co. KG Quartz glass body having improved resistance against plasma corrosion, and method for production thereof
TWI293947B (de) * 2001-03-26 2008-03-01 Tosoh Corp
JP2003292337A (ja) 2002-04-01 2003-10-15 Tosoh Corp プラズマ耐食性石英ガラス、その製造方法及びこれを用いた装置
JP4204398B2 (ja) * 2002-07-31 2009-01-07 信越石英株式会社 石英ガラスの製造方法
US7841211B2 (en) * 2002-11-29 2010-11-30 Shin-Etsu Quartz Products Co., Ltd. Production process of synthetic quartz glass
EP1564209A1 (de) * 2004-02-17 2005-08-17 Helsinn Advanced Synthesis SA Verfahren zur Herstellung von 13-cis-Retinsäure
DE102004052312A1 (de) * 2004-08-23 2006-03-02 Heraeus Quarzglas Gmbh & Co. Kg Beschichtetes Bauteil aus Quarzglas sowie Verfahren zur Herstellung des Bauteils
US7365037B2 (en) * 2004-09-30 2008-04-29 Shin-Etsu Quartz Products Co., Ltd. Quartz glass having excellent resistance against plasma corrosion and method for producing the same
DE102005017739B4 (de) * 2005-04-15 2009-11-05 Heraeus Quarzglas Gmbh & Co. Kg Halter aus Quarzglas für die Prozessierung von Halbleiterwafern und Verfahren zur Herstellung des Halters
US7718559B2 (en) * 2007-04-20 2010-05-18 Applied Materials, Inc. Erosion resistance enhanced quartz used in plasma etch chamber

Also Published As

Publication number Publication date
EP2061726B1 (de) 2010-11-10
KR101044771B1 (ko) 2011-06-29
DE102006043738A1 (de) 2008-03-27
JP2010503599A (ja) 2010-02-04
WO2008031742A3 (en) 2008-05-22
US20090163344A1 (en) 2009-06-25
TWI393689B (zh) 2013-04-21
EP2061726A2 (de) 2009-05-27
CN101426744A (zh) 2009-05-06
TW200821275A (en) 2008-05-16
IL194990A0 (en) 2009-08-03
WO2008031742A2 (en) 2008-03-20
JP5502479B2 (ja) 2014-05-28
IL194990A (en) 2012-04-30
DE102006043738B4 (de) 2008-10-16
US8017536B2 (en) 2011-09-13
KR20090029179A (ko) 2009-03-20
CN101426744B (zh) 2012-10-03

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