DE602007003296D1 - Siliciumwafer für Halbleiter und Verfahren zu seiner Herstellung - Google Patents
Siliciumwafer für Halbleiter und Verfahren zu seiner HerstellungInfo
- Publication number
- DE602007003296D1 DE602007003296D1 DE602007003296T DE602007003296T DE602007003296D1 DE 602007003296 D1 DE602007003296 D1 DE 602007003296D1 DE 602007003296 T DE602007003296 T DE 602007003296T DE 602007003296 T DE602007003296 T DE 602007003296T DE 602007003296 D1 DE602007003296 D1 DE 602007003296D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductors
- production
- silicon wafers
- wafers
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 235000012431 wafers Nutrition 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/206—Controlling or regulating the thermal history of growing the ingot
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
- Y10T428/24992—Density or compression of components
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006254946 | 2006-09-20 | ||
JP2007178920A JP5072460B2 (ja) | 2006-09-20 | 2007-07-06 | 半導体用シリコンウエハ、およびその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602007003296D1 true DE602007003296D1 (de) | 2009-12-31 |
Family
ID=38663072
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602007003296T Active DE602007003296D1 (de) | 2006-09-20 | 2007-09-12 | Siliciumwafer für Halbleiter und Verfahren zu seiner Herstellung |
Country Status (8)
Country | Link |
---|---|
US (1) | US8197594B2 (de) |
EP (1) | EP1914795B1 (de) |
JP (1) | JP5072460B2 (de) |
KR (1) | KR100875228B1 (de) |
CN (1) | CN101187058B (de) |
DE (1) | DE602007003296D1 (de) |
SG (1) | SG141309A1 (de) |
TW (1) | TWI399464B (de) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4894863B2 (ja) | 2008-02-08 | 2012-03-14 | Jfeスチール株式会社 | 加工性に優れた高強度溶融亜鉛めっき鋼板およびその製造方法 |
JP5276863B2 (ja) * | 2008-03-21 | 2013-08-28 | グローバルウェーハズ・ジャパン株式会社 | シリコンウェーハ |
JP5537802B2 (ja) * | 2008-12-26 | 2014-07-02 | ジルトロニック アクチエンゲゼルシャフト | シリコンウエハの製造方法 |
US8357939B2 (en) * | 2009-12-29 | 2013-01-22 | Siltronic Ag | Silicon wafer and production method therefor |
JP5533210B2 (ja) * | 2010-05-06 | 2014-06-25 | 株式会社Sumco | シリコンウェーハの熱処理方法 |
JP5764937B2 (ja) * | 2011-01-24 | 2015-08-19 | 信越半導体株式会社 | シリコン単結晶ウェーハの製造方法 |
DE102012214085B4 (de) | 2012-08-08 | 2016-07-07 | Siltronic Ag | Halbleiterscheibe aus einkristallinem Silizium und Verfahren zu deren Herstellung |
JP2016504759A (ja) * | 2012-11-19 | 2016-02-12 | サンエディソン・セミコンダクター・リミテッドSunEdison Semiconductor Limited | 熱処理により不活性な酸素析出核を活性化する高析出密度ウエハの製造 |
JP6136346B2 (ja) * | 2013-02-21 | 2017-05-31 | 株式会社Sumco | エピタキシャルシリコンウェーハの製造方法 |
US10141413B2 (en) | 2013-03-13 | 2018-11-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wafer strength by control of uniformity of edge bulk micro defects |
US9064823B2 (en) * | 2013-03-13 | 2015-06-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for qualifying a semiconductor wafer for subsequent processing |
KR101472349B1 (ko) * | 2013-05-21 | 2014-12-12 | 주식회사 엘지실트론 | 반도체용 실리콘 단결정 잉곳 및 웨이퍼 |
JP5885305B2 (ja) * | 2013-08-07 | 2016-03-15 | グローバルウェーハズ・ジャパン株式会社 | シリコンウェーハ及びその製造方法 |
JP6191534B2 (ja) * | 2014-05-01 | 2017-09-06 | 信越半導体株式会社 | ウエハのそりの評価方法及びウエハの選別方法 |
JP6100226B2 (ja) * | 2014-11-26 | 2017-03-22 | 信越半導体株式会社 | シリコン単結晶ウェーハの熱処理方法 |
JP6458551B2 (ja) | 2015-02-25 | 2019-01-30 | 株式会社Sumco | シリコンウェーハの良否判定方法、該方法を用いたシリコンウェーハの製造方法およびシリコンウェーハ |
JP6413952B2 (ja) | 2015-06-26 | 2018-10-31 | 株式会社Sumco | シリコンウェーハの良否判定方法、該方法を用いたシリコンウェーハの製造方法およびシリコンウェーハ |
CN105070647B (zh) * | 2015-07-27 | 2018-09-25 | 上海晶盟硅材料有限公司 | 外延片、外延片制备方法以及半导体器件 |
US10026843B2 (en) * | 2015-11-30 | 2018-07-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Fin structure of semiconductor device, manufacturing method thereof, and manufacturing method of active region of semiconductor device |
DE102015224983B4 (de) * | 2015-12-11 | 2019-01-24 | Siltronic Ag | Halbleiterscheibe aus einkristallinem Silizium und Verfahren zu deren Herstellung |
CN106884203A (zh) * | 2015-12-15 | 2017-06-23 | 上海新昇半导体科技有限公司 | 单晶硅锭及晶圆的形成方法 |
DE102015226399A1 (de) | 2015-12-22 | 2017-06-22 | Siltronic Ag | Siliciumscheibe mit homogener radialer Sauerstoffvariation |
JP6299835B1 (ja) | 2016-10-07 | 2018-03-28 | 株式会社Sumco | エピタキシャルシリコンウェーハおよびエピタキシャルシリコンウェーハの製造方法 |
DE102016225138A1 (de) * | 2016-12-15 | 2018-06-21 | Siltronic Ag | Halbleiterscheibe aus einkristallinem Silizium und Verfahren zur Herstellung einer Halbleiterscheibe aus einkristallinem Silizium |
EP3428325B1 (de) * | 2017-07-10 | 2019-09-11 | Siltronic AG | Aus einkristallsilicium hergestellter halbleiter-wafer und verfahren zur herstellung davon |
JP6881292B2 (ja) * | 2017-12-28 | 2021-06-02 | 信越半導体株式会社 | 再結合ライフタイムの制御方法 |
WO2020115838A1 (ja) * | 2018-12-05 | 2020-06-11 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR0139730B1 (ko) * | 1993-02-23 | 1998-06-01 | 사또오 후미오 | 반도체 기판 및 그 제조방법 |
JPH06310517A (ja) * | 1993-02-23 | 1994-11-04 | Toshiba Corp | 半導体基板及びその製造方法 |
DE4407272C2 (de) * | 1994-03-04 | 1996-01-11 | Cassella Ag | Verfahren zur Herstellung cyclischer Vinylphosphonsäureester |
JPH08213403A (ja) | 1995-02-07 | 1996-08-20 | Sumitomo Metal Ind Ltd | 半導体基板及びその製造方法 |
DE19637182A1 (de) * | 1996-09-12 | 1998-03-19 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung von Halbleiterscheiben aus Silicium mit geringer Defektdichte |
JPH10303208A (ja) * | 1997-04-30 | 1998-11-13 | Toshiba Corp | 半導体基板およびその製造方法 |
JP3989122B2 (ja) * | 1998-08-07 | 2007-10-10 | シルトロニック・ジャパン株式会社 | シリコン半導体基板の製造方法 |
US6436846B1 (en) * | 1998-09-03 | 2002-08-20 | Siemens Aktiengesellscharft | Combined preanneal/oxidation step using rapid thermal processing |
JP4460671B2 (ja) * | 1999-03-26 | 2010-05-12 | シルトロニック・ジャパン株式会社 | シリコン半導体基板及びその製造方法 |
JP4646440B2 (ja) * | 2001-05-28 | 2011-03-09 | 信越半導体株式会社 | 窒素ドープアニールウエーハの製造方法 |
JP2003059932A (ja) * | 2001-08-08 | 2003-02-28 | Toshiba Ceramics Co Ltd | シリコン単結晶ウエハの製造方法およびシリコン単結晶ウエハ |
JP4615161B2 (ja) * | 2001-08-23 | 2011-01-19 | 信越半導体株式会社 | エピタキシャルウエーハの製造方法 |
JP2006040980A (ja) * | 2004-07-22 | 2006-02-09 | Sumco Corp | シリコンウェーハおよびその製造方法 |
JP2006054350A (ja) * | 2004-08-12 | 2006-02-23 | Komatsu Electronic Metals Co Ltd | 窒素ドープシリコンウェーハとその製造方法 |
-
2007
- 2007-07-06 JP JP2007178920A patent/JP5072460B2/ja active Active
- 2007-07-27 SG SG200705539-5A patent/SG141309A1/en unknown
- 2007-09-12 EP EP07017887A patent/EP1914795B1/de active Active
- 2007-09-12 DE DE602007003296T patent/DE602007003296D1/de active Active
- 2007-09-19 KR KR1020070095498A patent/KR100875228B1/ko active IP Right Grant
- 2007-09-19 TW TW096134885A patent/TWI399464B/zh active
- 2007-09-19 US US11/857,460 patent/US8197594B2/en active Active
- 2007-09-20 CN CN2007101534928A patent/CN101187058B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
US8197594B2 (en) | 2012-06-12 |
TWI399464B (zh) | 2013-06-21 |
CN101187058A (zh) | 2008-05-28 |
US20080113171A1 (en) | 2008-05-15 |
TW200822231A (en) | 2008-05-16 |
CN101187058B (zh) | 2011-01-19 |
JP2008103673A (ja) | 2008-05-01 |
KR20080026516A (ko) | 2008-03-25 |
JP5072460B2 (ja) | 2012-11-14 |
EP1914795B1 (de) | 2009-11-18 |
SG141309A1 (en) | 2008-04-28 |
EP1914795A1 (de) | 2008-04-23 |
KR100875228B1 (ko) | 2008-12-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |