DE602005026199D1 - Halbleiter-Bauelement mit Oberflächengebieten unterschiedlicher Kristallausrichtungen und Herstellungsverfahren - Google Patents
Halbleiter-Bauelement mit Oberflächengebieten unterschiedlicher Kristallausrichtungen und HerstellungsverfahrenInfo
- Publication number
- DE602005026199D1 DE602005026199D1 DE602005026199T DE602005026199T DE602005026199D1 DE 602005026199 D1 DE602005026199 D1 DE 602005026199D1 DE 602005026199 T DE602005026199 T DE 602005026199T DE 602005026199 T DE602005026199 T DE 602005026199T DE 602005026199 D1 DE602005026199 D1 DE 602005026199D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- manufacturing processes
- surface regions
- different crystal
- crystal orientations
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000013078 crystal Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- E—FIXED CONSTRUCTIONS
- E03—WATER SUPPLY; SEWERAGE
- E03B—INSTALLATIONS OR METHODS FOR OBTAINING, COLLECTING, OR DISTRIBUTING WATER
- E03B11/00—Arrangements or adaptations of tanks for water supply
- E03B11/02—Arrangements or adaptations of tanks for water supply for domestic or like local water supply
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823821—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/7851—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with the body tied to the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/7853—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET the body having a non-rectangular crossection
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
- B65D88/00—Large containers
- B65D88/02—Large containers rigid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
- B65D90/00—Component parts, details or accessories for large containers
- B65D90/02—Wall construction
- B65D90/04—Linings
- B65D90/041—Rigid liners fixed to the container
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Structural Engineering (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Hydrology & Water Resources (AREA)
- Public Health (AREA)
- Water Supply & Treatment (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050000584A KR100849177B1 (ko) | 2005-01-04 | 2005-01-04 | 패싯 채널들을 갖는 모스 트랜지스터를 채택하는 반도체집적회로 소자들 및 그 제조방법들 |
US11/281,599 US7671420B2 (en) | 2005-01-04 | 2005-11-18 | Semiconductor devices having faceted channels and methods of fabricating such devices |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602005026199D1 true DE602005026199D1 (de) | 2011-03-17 |
Family
ID=36641035
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602005026199T Active DE602005026199D1 (de) | 2005-01-04 | 2005-12-29 | Halbleiter-Bauelement mit Oberflächengebieten unterschiedlicher Kristallausrichtungen und Herstellungsverfahren |
Country Status (3)
Country | Link |
---|---|
US (1) | US7671420B2 (de) |
KR (1) | KR100849177B1 (de) |
DE (1) | DE602005026199D1 (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7432149B2 (en) * | 2005-06-23 | 2008-10-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | CMOS on SOI substrates with hybrid crystal orientations |
US7611937B2 (en) * | 2005-06-24 | 2009-11-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | High performance transistors with hybrid crystal orientations |
US7396407B2 (en) * | 2006-04-18 | 2008-07-08 | International Business Machines Corporation | Trench-edge-defect-free recrystallization by edge-angle-optimized solid phase epitaxy: method and applications to hybrid orientation substrates |
US7582516B2 (en) * | 2006-06-06 | 2009-09-01 | International Business Machines Corporation | CMOS devices with hybrid channel orientations, and methods for fabricating the same using faceted epitaxy |
KR100772114B1 (ko) * | 2006-09-29 | 2007-11-01 | 주식회사 하이닉스반도체 | 반도체 소자의 제조방법 |
US7696573B2 (en) * | 2007-10-31 | 2010-04-13 | International Business Machines Corporation | Multiple crystallographic orientation semiconductor structures |
US8362572B2 (en) * | 2010-02-09 | 2013-01-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Lower parasitic capacitance FinFET |
US8841701B2 (en) * | 2011-08-30 | 2014-09-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFET device having a channel defined in a diamond-like shape semiconductor structure |
KR101865626B1 (ko) * | 2011-11-09 | 2018-06-11 | 삼성전자주식회사 | 박막 구조물 및 박막 구조물의 형성 방법 |
US9142400B1 (en) | 2012-07-17 | 2015-09-22 | Stc.Unm | Method of making a heteroepitaxial layer on a seed area |
KR102017616B1 (ko) | 2013-01-02 | 2019-09-03 | 삼성전자주식회사 | 전계 효과 트랜지스터 |
US9159834B2 (en) * | 2013-03-14 | 2015-10-13 | International Business Machines Corporation | Faceted semiconductor nanowire |
US9129889B2 (en) * | 2013-03-15 | 2015-09-08 | Semiconductor Components Industries, Llc | High electron mobility semiconductor device and method therefor |
KR102038486B1 (ko) | 2013-04-09 | 2019-10-30 | 삼성전자 주식회사 | 반도체 장치 및 그 제조 방법 |
US9263554B2 (en) * | 2013-06-04 | 2016-02-16 | International Business Machines Corporation | Localized fin width scaling using a hydrogen anneal |
WO2014209393A1 (en) * | 2013-06-28 | 2014-12-31 | Intel Corporation | NANOSTRUCTURES AND NANOFEATURES WITH Si (111) PLANES ON Si (100) WAFERS FOR III-N EPITAXY |
CN103413828A (zh) * | 2013-07-18 | 2013-11-27 | 清华大学 | 多边形沟道层多栅结构隧穿晶体管及其形成方法 |
CN103456756A (zh) * | 2013-09-26 | 2013-12-18 | 哈尔滨工程大学 | 一种有源像素结构及其制作方法 |
US9129825B2 (en) * | 2013-11-01 | 2015-09-08 | International Business Machines Corporation | Field effect transistor including a regrown contoured channel |
US9263586B2 (en) | 2014-06-06 | 2016-02-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Quantum well fin-like field effect transistor (QWFinFET) having a two-section combo QW structure |
KR102351659B1 (ko) | 2015-04-03 | 2022-01-17 | 삼성전자주식회사 | 전계 효과 트랜지스터를 포함하는 반도체 소자 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997016854A1 (de) | 1995-11-01 | 1997-05-09 | Amo Gmbh | Halbleiter-bauelement mit prismenförmigem kanalbereich |
US6483171B1 (en) * | 1999-08-13 | 2002-11-19 | Micron Technology, Inc. | Vertical sub-micron CMOS transistors on (110), (111), (311), (511), and higher order surfaces of bulk, SOI and thin film structures and method of forming same |
US6245615B1 (en) * | 1999-08-31 | 2001-06-12 | Micron Technology, Inc. | Method and apparatus on (110) surfaces of silicon structures with conduction in the <110> direction |
US6475890B1 (en) | 2001-02-12 | 2002-11-05 | Advanced Micro Devices, Inc. | Fabrication of a field effect transistor with an upside down T-shaped semiconductor pillar in SOI technology |
JP2002359293A (ja) | 2001-05-31 | 2002-12-13 | Toshiba Corp | 半導体装置 |
KR100682178B1 (ko) | 2001-06-18 | 2007-02-12 | 주식회사 하이닉스반도체 | 시모스(cmos)의 제조 방법 |
DE10131237B8 (de) | 2001-06-28 | 2006-08-10 | Infineon Technologies Ag | Feldeffekttransistor und Verfahren zu seiner Herstellung |
US6673667B2 (en) * | 2001-08-15 | 2004-01-06 | Motorola, Inc. | Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials |
JP3782021B2 (ja) | 2002-02-22 | 2006-06-07 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、半導体基板の製造方法 |
US6864520B2 (en) * | 2002-04-04 | 2005-03-08 | International Business Machines Corporation | Germanium field effect transistor and method of fabricating the same |
KR100426442B1 (ko) | 2002-05-13 | 2004-04-13 | 주식회사 하이닉스반도체 | 반도체소자의 제조방법 |
JP2004014856A (ja) | 2002-06-07 | 2004-01-15 | Sharp Corp | 半導体基板の製造方法及び半導体装置の製造方法 |
US6645797B1 (en) * | 2002-12-06 | 2003-11-11 | Advanced Micro Devices, Inc. | Method for forming fins in a FinFET device using sacrificial carbon layer |
US6902962B2 (en) * | 2003-04-04 | 2005-06-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Silicon-on-insulator chip with multiple crystal orientations |
EP1555688B1 (de) | 2004-01-17 | 2009-11-11 | Samsung Electronics Co., Ltd. | Verfahren zur Herstellung eines FinFET mit mehrseitigem Kanal |
-
2005
- 2005-01-04 KR KR1020050000584A patent/KR100849177B1/ko active IP Right Grant
- 2005-11-18 US US11/281,599 patent/US7671420B2/en active Active
- 2005-12-29 DE DE602005026199T patent/DE602005026199D1/de active Active
Also Published As
Publication number | Publication date |
---|---|
KR100849177B1 (ko) | 2008-07-30 |
KR20060080303A (ko) | 2006-07-10 |
US7671420B2 (en) | 2010-03-02 |
US20060148154A1 (en) | 2006-07-06 |
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