DE602007009728D1 - Maskenprogrammierbare antischmelzverbindungsarchitektur - Google Patents

Maskenprogrammierbare antischmelzverbindungsarchitektur

Info

Publication number
DE602007009728D1
DE602007009728D1 DE602007009728T DE602007009728T DE602007009728D1 DE 602007009728 D1 DE602007009728 D1 DE 602007009728D1 DE 602007009728 T DE602007009728 T DE 602007009728T DE 602007009728 T DE602007009728 T DE 602007009728T DE 602007009728 D1 DE602007009728 D1 DE 602007009728D1
Authority
DE
Germany
Prior art keywords
memory cells
mask
programming
mask programmable
programmable memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602007009728T
Other languages
English (en)
Inventor
Wlodek Kurjanowicz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sidense Corp
Original Assignee
Sidense Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sidense Corp filed Critical Sidense Corp
Publication of DE602007009728D1 publication Critical patent/DE602007009728D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Shift Register Type Memory (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Storage Device Security (AREA)
  • Stored Programmes (AREA)
DE602007009728T 2006-12-22 2007-12-20 Maskenprogrammierbare antischmelzverbindungsarchitektur Active DE602007009728D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US87151906P 2006-12-22 2006-12-22
PCT/CA2007/002287 WO2008077240A1 (en) 2006-12-22 2007-12-20 Mask programmable anti-fuse architecture

Publications (1)

Publication Number Publication Date
DE602007009728D1 true DE602007009728D1 (de) 2010-11-18

Family

ID=39562052

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602007009728T Active DE602007009728D1 (de) 2006-12-22 2007-12-20 Maskenprogrammierbare antischmelzverbindungsarchitektur

Country Status (10)

Country Link
US (2) US7944727B2 (de)
EP (1) EP2122630B1 (de)
JP (2) JP5448837B2 (de)
KR (1) KR101193348B1 (de)
AT (1) ATE484059T1 (de)
CA (3) CA2645813C (de)
DE (1) DE602007009728D1 (de)
IL (1) IL199385A (de)
TW (2) TWI383491B (de)
WO (2) WO2008077240A1 (de)

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US7725844B2 (en) * 2008-02-11 2010-05-25 International Business Machines Corporation Method and circuit for implementing eFuse sense amplifier verification
US8208312B1 (en) 2009-09-22 2012-06-26 Novocell Semiconductor, Inc. Non-volatile memory element integratable with standard CMOS circuitry
US8134859B1 (en) 2009-09-25 2012-03-13 Novocell Semiconductor, Inc. Method of sensing a programmable non-volatile memory element
US8199590B1 (en) 2009-09-25 2012-06-12 Novocell Semiconductor, Inc. Multiple time programmable non-volatile memory element
US8105885B1 (en) * 2010-08-06 2012-01-31 Altera Corporation Hardened programmable devices
DE102011006315A1 (de) 2011-03-29 2012-10-04 Henkel Ag & Co. Kgaa Wasch- oder Reinigungsmittel mit modifizierten Riechstoffen
US8853833B2 (en) 2011-06-13 2014-10-07 Micron Technology, Inc. Electromagnetic shield and associated methods
US8530283B2 (en) * 2011-09-14 2013-09-10 Semiconductor Components Industries, Llc Process for forming an electronic device including a nonvolatile memory structure having an antifuse component
CN103890856B (zh) 2011-10-27 2017-07-11 慧与发展有限责任合伙企业 支持内存储数据结构的可移位存储器
US8837226B2 (en) * 2011-11-01 2014-09-16 Apple Inc. Memory including a reduced leakage wordline driver
JP5842717B2 (ja) * 2012-04-05 2016-01-13 株式会社ソシオネクスト 半導体記憶装置
US8928387B2 (en) 2013-05-10 2015-01-06 Laurence H. Cooke Tunable clock distribution system
KR102216563B1 (ko) * 2014-04-07 2021-02-18 삼성전자주식회사 불 휘발성 메모리 장치 및 그것을 포함하는 메모리 시스템
KR102316279B1 (ko) * 2015-10-19 2021-10-22 삼성전자주식회사 비휘발성 메모리 장치 및 이를 포함하는 에스에스디
US10014066B2 (en) * 2015-11-30 2018-07-03 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-fuse cell structure including reading and programming devices with different gate dielectric thickness
CA2952941C (en) * 2016-01-08 2018-12-11 Sidense Corp. Puf value generation using an anti-fuse memory array
US10095889B2 (en) * 2016-03-04 2018-10-09 Altera Corporation Techniques for protecting security features of integrated circuits
FR3050319B1 (fr) * 2016-04-14 2018-05-11 Stmicroelectronics Sa Memoire morte configurable
US10332582B2 (en) 2017-08-02 2019-06-25 Qualcomm Incorporated Partial refresh technique to save memory refresh power
EP3454318B1 (de) * 2017-09-12 2022-05-11 eMemory Technology Inc. Sicherheitssystem mit entropy bits, die von einer puf generiert werden
US10929588B2 (en) 2018-02-13 2021-02-23 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit layout, structure, system, and methods
WO2019194008A1 (ja) 2018-04-02 2019-10-10 株式会社ソシオネクスト 半導体記憶装置
CN110489351B (zh) * 2018-05-14 2021-03-09 英韧科技(上海)有限公司 芯片指纹管理装置及安全芯片
US10777288B2 (en) * 2018-08-07 2020-09-15 Synopsys, Inc. One time programmable (OTP) bit cell with integrated inhibit device
TWI718861B (zh) 2020-02-04 2021-02-11 億而得微電子股份有限公司 低電壓反熔絲元件

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JPS59132160A (ja) * 1983-01-18 1984-07-30 Fujitsu Ltd 半導体装置
JPH01189958A (ja) * 1988-01-26 1989-07-31 Toshiba Corp 半導体記憶装置
JP2899313B2 (ja) * 1989-06-15 1999-06-02 松下電子工業株式会社 プログラマブル素子
JP2547451B2 (ja) 1989-09-18 1996-10-23 富士通株式会社 半導体記憶装置
US6384623B1 (en) * 1993-01-07 2002-05-07 Hitachi, Ltd. Semiconductor integrated circuits with power reduction mechanism
US5495436A (en) * 1995-01-13 1996-02-27 Vlsi Technology, Inc. Anti-fuse ROM programming circuit
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US5909049A (en) * 1997-02-11 1999-06-01 Actel Corporation Antifuse programmed PROM cell
JPH1131800A (ja) * 1997-07-10 1999-02-02 Sony Corp 半導体不揮発性記憶装置およびその製造方法
US5940332A (en) * 1997-11-13 1999-08-17 Stmicroelectronics, Inc. Programmed memory with improved speed and power consumption
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US6590797B1 (en) * 2002-01-09 2003-07-08 Tower Semiconductor Ltd. Multi-bit programmable memory cell having multiple anti-fuse elements
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KR100634439B1 (ko) * 2004-10-26 2006-10-16 삼성전자주식회사 퓨즈프리 회로, 퓨즈프리 반도체 집적회로 및 퓨즈프리불휘발성 메모리 장치, 그리고 퓨즈프리 방법
US7106096B2 (en) * 2004-11-11 2006-09-12 International Business Machines Corporation Circuit and method of controlling integrated circuit power consumption using phase change switches
DE102004056459B4 (de) 2004-11-23 2007-01-18 Infineon Technologies Ag ROM-Speicherzelle mit definierten Bitleitungsspannungen
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Also Published As

Publication number Publication date
WO2008077239A1 (en) 2008-07-03
EP2122630B1 (de) 2010-10-06
US7944727B2 (en) 2011-05-17
JP2010514168A (ja) 2010-04-30
CA2645788A1 (en) 2008-07-03
US20090262566A1 (en) 2009-10-22
TW200834893A (en) 2008-08-16
CA2645813C (en) 2010-02-02
EP2122630A1 (de) 2009-11-25
TWI383491B (zh) 2013-01-21
JP2014045209A (ja) 2014-03-13
TWI493556B (zh) 2015-07-21
CA2729505C (en) 2012-11-13
ATE484059T1 (de) 2010-10-15
KR20090094372A (ko) 2009-09-04
JP5448837B2 (ja) 2014-03-19
TW201241832A (en) 2012-10-16
WO2008077240A1 (en) 2008-07-03
US7817456B2 (en) 2010-10-19
US20090180307A1 (en) 2009-07-16
EP2122630A4 (de) 2010-01-27
KR101193348B1 (ko) 2012-10-19
CA2645788C (en) 2010-01-26
IL199385A (en) 2014-04-30
CA2729505A1 (en) 2008-07-13
CA2645813A1 (en) 2008-07-03
JP5738380B2 (ja) 2015-06-24

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