DE602005019825D1 - Verfahren zum Beschichten eines Substrats mit einer Dünnfilmstruktur - Google Patents

Verfahren zum Beschichten eines Substrats mit einer Dünnfilmstruktur

Info

Publication number
DE602005019825D1
DE602005019825D1 DE602005019825T DE602005019825T DE602005019825D1 DE 602005019825 D1 DE602005019825 D1 DE 602005019825D1 DE 602005019825 T DE602005019825 T DE 602005019825T DE 602005019825 T DE602005019825 T DE 602005019825T DE 602005019825 D1 DE602005019825 D1 DE 602005019825D1
Authority
DE
Germany
Prior art keywords
coating
thin
substrate
film structure
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005019825T
Other languages
English (en)
Inventor
Shinri Sakai
Toshimitsu Hirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of DE602005019825D1 publication Critical patent/DE602005019825D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259Multistep manufacturing methods
    • H01L27/1292Multistep manufacturing methods using liquid deposition, e.g. printing
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/13439Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259Multistep manufacturing methods
    • H01L27/1296Multistep manufacturing methods adapted to increase the uniformity of device parameters
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H05K3/1258Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by using a substrate provided with a shape pattern, e.g. grooves, banks, resist pattern
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/12Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Optical Integrated Circuits (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Ink Jet (AREA)
  • Liquid Crystal (AREA)
DE602005019825T 2004-11-01 2005-10-26 Verfahren zum Beschichten eines Substrats mit einer Dünnfilmstruktur Active DE602005019825D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004317559A JP2006126692A (ja) 2004-11-01 2004-11-01 薄膜パターン基板、デバイスの製造方法、及び電気光学装置、並びに電子機器

Publications (1)

Publication Number Publication Date
DE602005019825D1 true DE602005019825D1 (de) 2010-04-22

Family

ID=35636762

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005019825T Active DE602005019825D1 (de) 2004-11-01 2005-10-26 Verfahren zum Beschichten eines Substrats mit einer Dünnfilmstruktur

Country Status (7)

Country Link
US (1) US7476559B2 (de)
EP (1) EP1652590B1 (de)
JP (1) JP2006126692A (de)
KR (1) KR100728149B1 (de)
CN (1) CN100388107C (de)
DE (1) DE602005019825D1 (de)
TW (1) TWI296945B (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI395253B (zh) * 2004-12-28 2013-05-01 Mitsumasa Koyanagi 使用自我組織化功能之積體電路裝置的製造方法及製造裝置
JP4598663B2 (ja) * 2005-03-18 2010-12-15 株式会社フューチャービジョン 表示装置とその製造方法
JP4556838B2 (ja) * 2005-05-13 2010-10-06 セイコーエプソン株式会社 バンクの形成方法および膜パターンの形成方法
JP4670596B2 (ja) 2005-11-04 2011-04-13 セイコーエプソン株式会社 膜パターン形成方法、デバイス、電気光学装置、及び電子機器
JP4561934B2 (ja) * 2008-11-19 2010-10-13 コニカミノルタホールディングス株式会社 有機薄膜トランジスタの製造方法、及び有機薄膜トランジスタ
JP5515281B2 (ja) * 2008-12-03 2014-06-11 ソニー株式会社 薄膜トランジスタ、表示装置、電子機器および薄膜トランジスタの製造方法
KR101337167B1 (ko) * 2008-12-24 2013-12-05 엘지디스플레이 주식회사 표시장치의 제조방법
JP4752927B2 (ja) * 2009-02-09 2011-08-17 ソニー株式会社 薄膜トランジスタおよび表示装置
KR20120043074A (ko) * 2009-08-11 2012-05-03 가부시키가이샤 시마쓰세사쿠쇼 광 매트릭스 디바이스의 제조 방법
DE102010032839B4 (de) 2010-07-30 2019-03-28 Jörg R. Bauer Sandwichbauteil mit einer Bedienschicht und einer Funktionsschicht
JP6085578B2 (ja) * 2014-03-11 2017-02-22 住友重機械工業株式会社 膜形成方法及び膜形成装置
CN205450520U (zh) 2016-04-06 2016-08-10 京东方科技集团股份有限公司 阵列基板和显示装置
CN109786431B (zh) * 2019-02-25 2021-10-22 京东方科技集团股份有限公司 显示基板及其制备方法、和显示装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5975205A (ja) 1982-10-25 1984-04-27 Seiko Epson Corp カラ−フイルタの製造方法
JP3241251B2 (ja) * 1994-12-16 2001-12-25 キヤノン株式会社 電子放出素子の製造方法及び電子源基板の製造方法
JPH11248927A (ja) * 1998-03-03 1999-09-17 Seiko Epson Corp フィルター製造装置とフィルター製造装置におけるインク重量測定方法
JP2000193814A (ja) * 1998-12-28 2000-07-14 Canon Inc カラ―フィルタの検査方法、検査装置、カラ―フィルタの製造方法
JP4035968B2 (ja) * 2000-06-30 2008-01-23 セイコーエプソン株式会社 導電膜パターンの形成方法
JP2002221616A (ja) * 2000-11-21 2002-08-09 Seiko Epson Corp カラーフィルタの製造方法及び製造装置、液晶装置の製造方法及び製造装置、el装置の製造方法及び製造装置、インクジェットヘッドの制御装置、材料の吐出方法及び材料の吐出装置、並びに電子機器
JP2003080694A (ja) * 2001-06-26 2003-03-19 Seiko Epson Corp 膜パターンの形成方法、膜パターン形成装置、導電膜配線、電気光学装置、電子機器、並びに非接触型カード媒体
JP2003063366A (ja) * 2001-08-30 2003-03-05 Nabco Ltd 鉄道車両用電気式応荷重弁
US20030146692A1 (en) * 2002-01-11 2003-08-07 Seiko Epson Corporation Organic EL device and manufacturing method therefor, electrooptic apparatus, and electronic apparatus
JP4126996B2 (ja) * 2002-03-13 2008-07-30 セイコーエプソン株式会社 デバイスの製造方法及びデバイス製造装置
JP2004006700A (ja) 2002-03-27 2004-01-08 Seiko Epson Corp 表面処理方法、表面処理基板、膜パターンの形成方法、電気光学装置の製造方法、電気光学装置、及び電子機器
JP3578162B2 (ja) * 2002-04-16 2004-10-20 セイコーエプソン株式会社 パターンの形成方法、パターン形成装置、導電膜配線、デバイスの製造方法、電気光学装置、並びに電子機器
TWI256732B (en) 2002-08-30 2006-06-11 Sharp Kk Thin film transistor, liquid crystal display apparatus, manufacturing method of thin film transistor, and manufacturing method of liquid crystal display apparatus
JP3823981B2 (ja) 2003-05-12 2006-09-20 セイコーエプソン株式会社 パターンと配線パターン形成方法、デバイスとその製造方法、電気光学装置、電子機器及びアクティブマトリクス基板の製造方法
JP2005019955A (ja) 2003-05-30 2005-01-20 Seiko Epson Corp 薄膜パターンの形成方法及びデバイスの製造方法、電気光学装置及び電子機器
US7273773B2 (en) * 2004-01-26 2007-09-25 Semiconductor Energy Laboratory Co., Ltd. Display device, method for manufacturing thereof, and television device
JP4330492B2 (ja) 2004-06-09 2009-09-16 シャープ株式会社 配線基板及びその製造方法

Also Published As

Publication number Publication date
US7476559B2 (en) 2009-01-13
KR20060051894A (ko) 2006-05-19
EP1652590A1 (de) 2006-05-03
EP1652590B1 (de) 2010-03-10
CN1769988A (zh) 2006-05-10
CN100388107C (zh) 2008-05-14
US20060092191A1 (en) 2006-05-04
TWI296945B (en) 2008-05-21
KR100728149B1 (ko) 2007-06-13
TW200621381A (en) 2006-07-01
JP2006126692A (ja) 2006-05-18

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