DE602005017715D1 - Treiberschaltung für einen Leistungstransistor - Google Patents

Treiberschaltung für einen Leistungstransistor

Info

Publication number
DE602005017715D1
DE602005017715D1 DE602005017715T DE602005017715T DE602005017715D1 DE 602005017715 D1 DE602005017715 D1 DE 602005017715D1 DE 602005017715 T DE602005017715 T DE 602005017715T DE 602005017715 T DE602005017715 T DE 602005017715T DE 602005017715 D1 DE602005017715 D1 DE 602005017715D1
Authority
DE
Germany
Prior art keywords
circuit
driver circuit
power transistor
quenching
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005017715T
Other languages
English (en)
Inventor
Petar Grbovic
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=34940305&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE602005017715(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed filed Critical
Publication of DE602005017715D1 publication Critical patent/DE602005017715D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/0406—Modifications for accelerating switching in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches

Landscapes

  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
  • Control Of Eletrric Generators (AREA)
  • Control Of Direct Current Motors (AREA)
  • Dc-Dc Converters (AREA)
DE602005017715T 2004-08-27 2005-07-19 Treiberschaltung für einen Leistungstransistor Active DE602005017715D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0409129A FR2874767B1 (fr) 2004-08-27 2004-08-27 Dispositif de commande d'un transistor de puissance

Publications (1)

Publication Number Publication Date
DE602005017715D1 true DE602005017715D1 (de) 2009-12-31

Family

ID=34940305

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005017715T Active DE602005017715D1 (de) 2004-08-27 2005-07-19 Treiberschaltung für einen Leistungstransistor

Country Status (6)

Country Link
US (1) US7368972B2 (de)
EP (1) EP1630961B1 (de)
JP (1) JP4837336B2 (de)
AT (1) ATE449460T1 (de)
DE (1) DE602005017715D1 (de)
FR (1) FR2874767B1 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7279862B1 (en) 2006-08-04 2007-10-09 Gm Global Technology Operations, Inc. Fault handling of inverter driven PM motor drives
US7652858B2 (en) * 2007-06-06 2010-01-26 Gm Global Technology Operations, Inc. Protection for permanent magnet motor control circuits
EP2216905B1 (de) * 2009-02-05 2012-08-29 Abb Oy Verfahren zur Steuerung eines IGBT und eines Gate-Treibers
FR2947973B1 (fr) * 2009-07-07 2011-06-17 Schneider Toshiba Inverter Dispositif de commande d'un transistor de puissance
CN101639514B (zh) * 2009-08-24 2011-06-22 天津华云自控股份有限公司 用于检测igbt的测试装置
DE102009046615A1 (de) * 2009-11-11 2011-05-19 Zf Friedrichshafen Ag Leistungsschalteranordnung für einen Wechselrichter
US8319458B2 (en) 2010-06-17 2012-11-27 GM Global Technology Operations LLC Vehicular electrical system and method for controlling an inverter during motor deceleration
US8446113B2 (en) 2010-06-17 2013-05-21 GM Global Technology Operations LLC Vehicular electrical system and method for controlling an inverter during motor deceleration
KR101261944B1 (ko) * 2010-09-17 2013-05-09 기아자동차주식회사 인버터 제어장치
JP5927739B2 (ja) * 2011-12-14 2016-06-01 富士電機株式会社 半導体装置
EP2801143A1 (de) 2012-01-05 2014-11-12 American Power Conversion Corporation Verfahren und vorrichtung zur steuerung von leistungsschaltern über einen digitalen kommunikationsbus
US8717069B2 (en) * 2012-04-24 2014-05-06 General Electric Company Converter switch apparatus and method
DE102012207147B4 (de) 2012-04-27 2016-01-21 Infineon Technologies Ag Verfahren zum Ansteuern von Leistungshalbleiterschaltern
US9356515B2 (en) 2012-09-14 2016-05-31 Freescale Semiconductor, Inc. Power switching device, three phase bridge inverter, and method of operating a power switching device
US8885310B2 (en) * 2012-10-31 2014-11-11 Freescale Semiconductor, Inc. Gate driver with desaturation detection and active clamping
EP2882103B1 (de) * 2013-12-04 2019-05-29 ABB Schweiz AG Verfahren und vorrichtung für kurzschlussschutz eines leistungshalbleiterschalters
US9444448B2 (en) * 2013-12-10 2016-09-13 General Electric Company High performance IGBT gate drive
JP6504832B2 (ja) 2014-01-28 2019-04-24 ゼネラル・エレクトリック・カンパニイ 統合された取り付けおよび冷却の装置、電子装置、および車両
AT515848B1 (de) * 2014-05-15 2020-09-15 Fronius Int Gmbh Schaltungsanordnung und Verfahren zum Ansteuern eines Halbleiterschaltelements
US10073512B2 (en) 2014-11-19 2018-09-11 General Electric Company System and method for full range control of dual active bridge
CN106160710A (zh) * 2015-03-23 2016-11-23 乐星产电(无锡)有限公司 Igbt驱动电路、igbt过流保护电路及方法
US9748947B1 (en) * 2016-07-12 2017-08-29 Ge Energy Power Conversion Technology Ltd IGBT gate drive circuit and method
WO2019044134A1 (ja) * 2017-08-29 2019-03-07 富士電機株式会社 検出装置、制御装置およびインバータ装置
CN107835002B (zh) * 2017-09-20 2024-03-12 同方威视技术股份有限公司 固态脉冲调制器中的保护电路、振荡补偿电路和供电电路
US10616965B1 (en) * 2019-05-29 2020-04-07 B/E Aerospace, Inc. Passive illumination ramping circuit
CN115378413B (zh) * 2022-10-25 2023-01-24 成都市易冲半导体有限公司 控制电路及控制方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05161343A (ja) * 1991-11-28 1993-06-25 Toshiba F Ee Syst Eng Kk Ｍｏｓゲートトランジスタの駆動回路
JP3577807B2 (ja) * 1995-05-23 2004-10-20 富士電機デバイステクノロジー株式会社 自己消弧形半導体素子の駆動回路
EP0913919B1 (de) * 1997-10-29 2003-05-07 Kabushiki Kaisha Meidensha Stromwandler
JP3447949B2 (ja) * 1998-03-31 2003-09-16 株式会社東芝 絶縁ゲート型半導体素子のゲート駆動回路、電力変換装置
US6556062B1 (en) * 1998-06-12 2003-04-29 South Island Discretes Limited Gate drive for insulated gate power semiconductors
JP4350295B2 (ja) * 2000-10-26 2009-10-21 三菱電機株式会社 半導体装置および半導体装置モジュール
JP3812353B2 (ja) * 2001-03-19 2006-08-23 株式会社日立製作所 半導体電力変換装置
JP4091793B2 (ja) * 2002-05-22 2008-05-28 三菱電機株式会社 電圧駆動形半導体素子のゲート駆動回路
JP2004048959A (ja) * 2002-07-15 2004-02-12 Fuji Electric Holdings Co Ltd 電圧駆動型素子のゲート駆動回路
DE10236532C1 (de) * 2002-08-09 2003-08-14 Semikron Elektronik Gmbh Schaltungsanordnung zur Ansteuerung von Leistungstransistoren
JP3997905B2 (ja) * 2002-12-06 2007-10-24 日産自動車株式会社 電圧駆動素子の駆動回路
JP4192650B2 (ja) * 2003-03-27 2008-12-10 株式会社豊田自動織機 パワースイッチング素子の駆動回路

Also Published As

Publication number Publication date
US20060044025A1 (en) 2006-03-02
FR2874767A1 (fr) 2006-03-03
FR2874767B1 (fr) 2006-10-20
JP4837336B2 (ja) 2011-12-14
EP1630961A1 (de) 2006-03-01
JP2006067795A (ja) 2006-03-09
EP1630961B1 (de) 2009-11-18
ATE449460T1 (de) 2009-12-15
US7368972B2 (en) 2008-05-06

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Legal Events

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8363 Opposition against the patent