ATE463078T1 - Einrichtung zur steuerung eines mos-transistors - Google Patents

Einrichtung zur steuerung eines mos-transistors

Info

Publication number
ATE463078T1
ATE463078T1 AT06847182T AT06847182T ATE463078T1 AT E463078 T1 ATE463078 T1 AT E463078T1 AT 06847182 T AT06847182 T AT 06847182T AT 06847182 T AT06847182 T AT 06847182T AT E463078 T1 ATE463078 T1 AT E463078T1
Authority
AT
Austria
Prior art keywords
transistor
connection
controlling
input connected
whole assembly
Prior art date
Application number
AT06847182T
Other languages
English (en)
Inventor
Hugues Doffin
Original Assignee
Valeo Equip Electr Moteur
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Valeo Equip Electr Moteur filed Critical Valeo Equip Electr Moteur
Application granted granted Critical
Publication of ATE463078T1 publication Critical patent/ATE463078T1/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6877—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption

Landscapes

  • Charge And Discharge Circuits For Batteries Or The Like (AREA)
  • Control Of Charge By Means Of Generators (AREA)
  • Networks Using Active Elements (AREA)
  • Power Conversion In General (AREA)
  • Rectifiers (AREA)
AT06847182T 2006-01-23 2006-12-19 Einrichtung zur steuerung eines mos-transistors ATE463078T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0600572A FR2896643B1 (fr) 2006-01-23 2006-01-23 Dispositif de commande d'un transistor mos
PCT/FR2006/051392 WO2007083008A2 (fr) 2006-01-23 2006-12-19 Dispositif de commande d'un transistor mos

Publications (1)

Publication Number Publication Date
ATE463078T1 true ATE463078T1 (de) 2010-04-15

Family

ID=37027480

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06847182T ATE463078T1 (de) 2006-01-23 2006-12-19 Einrichtung zur steuerung eines mos-transistors

Country Status (7)

Country Link
US (1) US8416548B2 (de)
EP (1) EP1992069B1 (de)
JP (1) JP2009524403A (de)
AT (1) ATE463078T1 (de)
DE (1) DE602006013354D1 (de)
FR (1) FR2896643B1 (de)
WO (1) WO2007083008A2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8232830B2 (en) 2007-02-02 2012-07-31 Mitsubishi Electric Corporation Rectifier with less conduction loss than a diode
FR3040558B1 (fr) * 2015-08-28 2017-08-11 Valeo Equip Electr Moteur Circuit d'excitation d'un alternateur de vehicule automobile, regulateur de tension et alternateur l'incorporant
JP6617002B2 (ja) * 2015-10-20 2019-12-04 株式会社 日立パワーデバイス 整流器、それを用いたオルタネータおよび電源
JP6789780B2 (ja) 2016-11-28 2020-11-25 株式会社 日立パワーデバイス 整流器およびそれを用いたオルタネータ
CN108736775B (zh) 2017-04-18 2020-02-14 财团法人工业技术研究院 整流器的控制方法及其系统
CN110970961B (zh) * 2018-12-06 2021-06-08 宁德时代新能源科技股份有限公司 用电保护电路

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4055777A (en) * 1976-11-02 1977-10-25 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Window comparator
US4297629A (en) * 1979-04-13 1981-10-27 Saft-Societe Des Accumulateurs Fixes Et De Traction Automatic switching arrangement for two batteries which are charged in parallel and discharged in series
US5408150A (en) * 1992-06-04 1995-04-18 Linear Technology Corporation Circuit for driving two power mosfets in a half-bridge configuration
JP3485655B2 (ja) * 1994-12-14 2004-01-13 株式会社ルネサステクノロジ 複合型ｍｏｓｆｅｔ
US5686814A (en) * 1996-08-29 1997-11-11 Data General Corporation Battery circuit for supplying power to an electronic device
US6031365A (en) * 1998-03-27 2000-02-29 Vantis Corporation Band gap reference using a low voltage power supply
JP3752943B2 (ja) * 2000-01-31 2006-03-08 株式会社日立製作所 半導体素子の駆動装置及びその制御方法
US6222751B1 (en) * 2000-05-15 2001-04-24 Stmicroelectronics S.R.L. Driver circuit for a polyphase DC motor with minimized voltage spikes
DE10061563B4 (de) * 2000-12-06 2005-12-08 RUBITEC Gesellschaft für Innovation und Technologie der Ruhr-Universität Bochum mbH Verfahren und Vorrichtung zum Ein- und Ausschalten von Leistungshalbleitern, insbesondere für ein drehzahlvariables Betreiben einer Asynchronmaschine, ein Betreiben einer Zündschaltung für Ottomotoren, sowie Schaltnetzteil
US7408796B2 (en) * 2003-11-04 2008-08-05 International Rectifier Corporation Integrated synchronous rectifier package
US7561391B2 (en) * 2005-12-20 2009-07-14 International Rectifier Corporation Input voltage sensing circuit

Also Published As

Publication number Publication date
EP1992069B1 (de) 2010-03-31
US20100270894A1 (en) 2010-10-28
WO2007083008A2 (fr) 2007-07-26
WO2007083008A3 (fr) 2007-11-22
DE602006013354D1 (de) 2010-05-12
FR2896643A1 (fr) 2007-07-27
EP1992069A2 (de) 2008-11-19
JP2009524403A (ja) 2009-06-25
FR2896643B1 (fr) 2009-01-09
US8416548B2 (en) 2013-04-09

Similar Documents

Publication Publication Date Title
JP5593904B2 (ja) 電圧クランプ回路およびこれを用いた集積回路
TW358938B (en) Semiconductor IC
ATE463078T1 (de) Einrichtung zur steuerung eines mos-transistors
TW200710847A (en) Current limit circuit and semiconductor memory device
TW200707905A (en) Semiconductor device, power supply device, and information processing device
US20130248923A1 (en) Bi-directional switch using series connected n-type mos devices in parallel with series connected p-type mos devices
CN2921917Y (zh) 电流镜以及使用该电流镜的发光装置
TW200740108A (en) I/O circuit
KR101716941B1 (ko) 스위치 회로
US8836380B2 (en) Bootstrap circuit
JP2009528748A (ja) 注入電流を制御及び／又は阻止する回路配置及び方法
US8729927B2 (en) Cascode drive circuitry
JP5418790B2 (ja) Ｅｓｄ保護を有するｍｉｇｆｅｔ回路
DE60316314D1 (de) Referenzkreis
US7468873B2 (en) Over-voltage protected semiconductor device
TW200618275A (en) High voltage tolerant I/O circuit using native NMOS transistor for improved performance
US7592677B2 (en) Over-voltage protected semiconductor device and fabrication
KR101681458B1 (ko) Ｃｍｏｓ 입력 버퍼 회로
TW200737715A (en) Low voltage output buffer and method for buffering digital output data
JP4424095B2 (ja) レベルシフト回路
TWI485542B (zh) 電源供應電路和電源供應方法
JP2007295209A (ja) アナログスイッチ回路
ATE456191T1 (de) Vor batterieverpolung geschützte logikausgangsstufe einer integrierten schaltung
JP5428259B2 (ja) 基準電圧発生回路および電源クランプ回路
US8829996B1 (en) High voltage MOS input stage

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties