DE602005015790D1 - Magnetischer RAM Speicher (MRAM) mit mehr als einem Bit pro Speicherzelle - Google Patents
Magnetischer RAM Speicher (MRAM) mit mehr als einem Bit pro SpeicherzelleInfo
- Publication number
- DE602005015790D1 DE602005015790D1 DE602005015790T DE602005015790T DE602005015790D1 DE 602005015790 D1 DE602005015790 D1 DE 602005015790D1 DE 602005015790 T DE602005015790 T DE 602005015790T DE 602005015790 T DE602005015790 T DE 602005015790T DE 602005015790 D1 DE602005015790 D1 DE 602005015790D1
- Authority
- DE
- Germany
- Prior art keywords
- mram
- bit per
- magnetic ram
- memory cell
- ram memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/881,746 US7301800B2 (en) | 2004-06-30 | 2004-06-30 | Multi-bit magnetic random access memory element |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602005015790D1 true DE602005015790D1 (de) | 2009-09-17 |
Family
ID=35079439
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602005015790T Expired - Fee Related DE602005015790D1 (de) | 2004-06-30 | 2005-06-29 | Magnetischer RAM Speicher (MRAM) mit mehr als einem Bit pro Speicherzelle |
Country Status (4)
Country | Link |
---|---|
US (1) | US7301800B2 (de) |
EP (1) | EP1612804B1 (de) |
JP (1) | JP2006019006A (de) |
DE (1) | DE602005015790D1 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7304887B2 (en) * | 2004-09-03 | 2007-12-04 | Samsung Electronics Co., Ltd. | Method and apparatus for multi-plane MRAM |
US20080094885A1 (en) * | 2006-10-24 | 2008-04-24 | Macronix International Co., Ltd. | Bistable Resistance Random Access Memory Structures with Multiple Memory Layers and Multilevel Memory States |
KR100961723B1 (ko) | 2008-02-18 | 2010-06-10 | 이화여자대학교 산학협력단 | 스핀 토크 변환을 이용한 자기터널접합 소자를 사용한xor 논리 연산장치 |
US7804710B2 (en) * | 2008-03-31 | 2010-09-28 | International Business Machines Corporation | Multi-layer magnetic random access memory using spin-torque magnetic tunnel junctions and method for write state of the multi-layer magnetic random access memory |
US8289662B2 (en) * | 2008-05-20 | 2012-10-16 | International Business Machines Corporation | Tunnel junction resistor for high resistance devices and systems using the same |
US8279662B2 (en) | 2010-11-11 | 2012-10-02 | Seagate Technology Llc | Multi-bit magnetic memory with independently programmable free layer domains |
US8203870B2 (en) | 2010-11-23 | 2012-06-19 | Seagate Technology Llc | Flux programmed multi-bit magnetic memory |
Family Cites Families (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2683919B2 (ja) * | 1988-07-29 | 1997-12-03 | 三菱電機株式会社 | 半導体記憶装置 |
JP2507164B2 (ja) * | 1990-10-04 | 1996-06-12 | 三菱電機株式会社 | 半導体記憶装置 |
US5287304A (en) * | 1990-12-31 | 1994-02-15 | Texas Instruments Incorporated | Memory cell circuit and array |
US5748545A (en) * | 1997-04-03 | 1998-05-05 | Aplus Integrated Circuits, Inc. | Memory device with on-chip manufacturing and memory cell defect detection capability |
JPH11354728A (ja) * | 1998-06-09 | 1999-12-24 | Canon Inc | 磁性薄膜メモリおよびその記録再生駆動方法 |
DE10020128A1 (de) * | 2000-04-14 | 2001-10-18 | Infineon Technologies Ag | MRAM-Speicher |
JP4020573B2 (ja) | 2000-07-27 | 2007-12-12 | 富士通株式会社 | 磁性メモリデバイス、および磁性メモリデバイスにおけるデータ読み出し方法 |
US6331943B1 (en) * | 2000-08-28 | 2001-12-18 | Motorola, Inc. | MTJ MRAM series-parallel architecture |
KR100451096B1 (ko) * | 2000-09-19 | 2004-10-02 | 엔이씨 일렉트로닉스 가부시키가이샤 | 자기메모리셀어레이를 갖는 비휘발성 반도체메모리장치 |
US6335890B1 (en) * | 2000-11-01 | 2002-01-01 | International Business Machines Corporation | Segmented write line architecture for writing magnetic random access memories |
JP2002216468A (ja) * | 2000-11-08 | 2002-08-02 | Canon Inc | 半導体記憶装置 |
JP3920565B2 (ja) * | 2000-12-26 | 2007-05-30 | 株式会社東芝 | 磁気ランダムアクセスメモリ |
JP5019681B2 (ja) * | 2001-04-26 | 2012-09-05 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
JP4282919B2 (ja) * | 2001-04-27 | 2009-06-24 | インターナショナル・ビジネス・マシーンズ・コーポレーション | レジスタ |
US6490217B1 (en) * | 2001-05-23 | 2002-12-03 | International Business Machines Corporation | Select line architecture for magnetic random access memories |
KR100589569B1 (ko) * | 2001-07-17 | 2006-06-19 | 산요덴키가부시키가이샤 | 반도체 메모리 장치 |
JP4780878B2 (ja) * | 2001-08-02 | 2011-09-28 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
JP4771631B2 (ja) * | 2001-09-21 | 2011-09-14 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
JP4570313B2 (ja) * | 2001-10-25 | 2010-10-27 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
JP3866567B2 (ja) | 2001-12-13 | 2007-01-10 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
US6594191B2 (en) * | 2001-12-13 | 2003-07-15 | Infineon Technologies Ag | Segmented write line architecture |
US6788605B2 (en) * | 2002-07-15 | 2004-09-07 | Hewlett-Packard Development Company, L.P. | Shared volatile and non-volatile memory |
JP4134637B2 (ja) * | 2002-08-27 | 2008-08-20 | 株式会社日立製作所 | 半導体装置 |
TW578149B (en) * | 2002-09-09 | 2004-03-01 | Ind Tech Res Inst | High density magnetic random access memory |
JP4133149B2 (ja) * | 2002-09-12 | 2008-08-13 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
US6714441B1 (en) * | 2002-09-17 | 2004-03-30 | Micron Technology, Inc. | Bridge-type magnetic random access memory (MRAM) latch |
JP4274790B2 (ja) * | 2002-12-25 | 2009-06-10 | 株式会社ルネサステクノロジ | 磁気記憶装置 |
KR100479810B1 (ko) * | 2002-12-30 | 2005-03-31 | 주식회사 하이닉스반도체 | 불휘발성 메모리 장치 |
US6940749B2 (en) * | 2003-02-24 | 2005-09-06 | Applied Spintronics Technology, Inc. | MRAM array with segmented word and bit lines |
US6778429B1 (en) * | 2003-06-02 | 2004-08-17 | International Business Machines Corporation | Write circuit for a magnetic random access memory |
US7203129B2 (en) * | 2004-02-16 | 2007-04-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Segmented MRAM memory array |
US7209383B2 (en) * | 2004-06-16 | 2007-04-24 | Stmicroelectronics, Inc. | Magnetic random access memory array having bit/word lines for shared write select and read operations |
FR2871921A1 (fr) | 2004-06-16 | 2005-12-23 | St Microelectronics Sa | Architecture de memoire a lignes d'ecriture segmentees |
-
2004
- 2004-06-30 US US10/881,746 patent/US7301800B2/en active Active
-
2005
- 2005-06-29 DE DE602005015790T patent/DE602005015790D1/de not_active Expired - Fee Related
- 2005-06-29 JP JP2005189888A patent/JP2006019006A/ja active Pending
- 2005-06-29 EP EP05254099A patent/EP1612804B1/de active Active
Also Published As
Publication number | Publication date |
---|---|
EP1612804B1 (de) | 2009-08-05 |
JP2006019006A (ja) | 2006-01-19 |
EP1612804A3 (de) | 2006-04-26 |
US20060002182A1 (en) | 2006-01-05 |
US7301800B2 (en) | 2007-11-27 |
EP1612804A2 (de) | 2006-01-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |