DE602004028773D1 - Vorrichtung zur Materialuntersuchung mittels Elektronenstrahl - Google Patents

Vorrichtung zur Materialuntersuchung mittels Elektronenstrahl

Info

Publication number
DE602004028773D1
DE602004028773D1 DE602004028773T DE602004028773T DE602004028773D1 DE 602004028773 D1 DE602004028773 D1 DE 602004028773D1 DE 602004028773 T DE602004028773 T DE 602004028773T DE 602004028773 T DE602004028773 T DE 602004028773T DE 602004028773 D1 DE602004028773 D1 DE 602004028773D1
Authority
DE
Germany
Prior art keywords
electron beam
material examination
examination
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004028773T
Other languages
English (en)
Inventor
Toshie Yaguchi
Takeo Kamino
Yoshifumi Taniguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Science Systems Ltd
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Hitachi Science Systems Ltd
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp, Hitachi Science Systems Ltd, Hitachi High Tech Corp filed Critical Hitachi High Technologies Corp
Publication of DE602004028773D1 publication Critical patent/DE602004028773D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G01N23/2252—Measuring emitted X-rays, e.g. electron probe microanalysis [EPMA]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/252—Tubes for spot-analysing by electron or ion beams; Microanalysers
    • H01J37/256—Tubes for spot-analysing by electron or ion beams; Microanalysers using scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
DE602004028773T 2003-03-18 2004-03-18 Vorrichtung zur Materialuntersuchung mittels Elektronenstrahl Expired - Lifetime DE602004028773D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003073932A JP3888980B2 (ja) 2003-03-18 2003-03-18 物質同定システム

Publications (1)

Publication Number Publication Date
DE602004028773D1 true DE602004028773D1 (de) 2010-10-07

Family

ID=32821314

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004028773T Expired - Lifetime DE602004028773D1 (de) 2003-03-18 2004-03-18 Vorrichtung zur Materialuntersuchung mittels Elektronenstrahl

Country Status (4)

Country Link
US (1) US6992286B2 (de)
EP (2) EP2237306B1 (de)
JP (1) JP3888980B2 (de)
DE (1) DE602004028773D1 (de)

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JP4199629B2 (ja) * 2003-09-18 2008-12-17 株式会社日立ハイテクノロジーズ 内部構造観察方法とその装置
JP4533306B2 (ja) * 2005-12-06 2010-09-01 株式会社日立ハイテクノロジーズ 半導体ウェハ検査方法及び欠陥レビュー装置
US8804897B2 (en) * 2006-07-21 2014-08-12 Areva Inc. Integrated method to analyze crystals in deposits
WO2008060237A1 (en) * 2006-11-15 2008-05-22 Hovmoeller Sven Electron rotation camera
GB0712052D0 (en) * 2007-06-21 2007-08-01 Oxford Instr Molecular Biotool Method for quantitive analysis of a material
JP5317556B2 (ja) * 2008-07-03 2013-10-16 株式会社日立ハイテクノロジーズ 電子線回折像の解析方法及び透過型電子顕微鏡
JP5308903B2 (ja) * 2009-04-28 2013-10-09 株式会社日立ハイテクノロジーズ 結晶方位同定システム及び透過電子顕微鏡
JP5315195B2 (ja) * 2009-09-30 2013-10-16 株式会社日立ハイテクノロジーズ 走査透過電子顕微鏡および走査透過像観察方法
JP5517584B2 (ja) * 2009-12-08 2014-06-11 株式会社日立ハイテクノロジーズ 電子顕微鏡
JP5546290B2 (ja) * 2010-03-02 2014-07-09 株式会社日立ハイテクノロジーズ 荷電粒子線装置及び荷電粒子線を用いた測長方法
US8314386B2 (en) * 2010-03-26 2012-11-20 Uchicago Argonne, Llc High collection efficiency X-ray spectrometer system with integrated electron beam stop, electron detector and X-ray detector for use on electron-optical beam lines and microscopes
FR2960699B1 (fr) * 2010-05-27 2013-05-10 Centre Nat Rech Scient Systeme de detection de cathodoluminescence souple et microscope mettant en oeuvre un tel systeme.
US8748817B2 (en) * 2010-07-27 2014-06-10 Vineet Kumar Orientation imaging using wide angle convergent beam diffraction in transmission electron microscopy
JP5473891B2 (ja) * 2010-12-27 2014-04-16 株式会社日立ハイテクノロジーズ 荷電粒子線装置及び試料作製方法
JP5799653B2 (ja) * 2011-08-17 2015-10-28 富士通株式会社 画像処理装置、像を生成する方法並びにシステム
JP5826064B2 (ja) * 2012-02-17 2015-12-02 株式会社日立ハイテクノロジーズ 電子顕微鏡
EP2823290B1 (de) * 2012-03-08 2017-09-13 Tescan Tempe, LLC. System und verfahren zum messen einer materialdehnung bei hoher räumlicher auflösung
EP2642279B1 (de) * 2012-03-19 2015-07-01 Universidad de Barcelona Verfahren und System zur Verbesserung von kennzeichnenden Spitzensignalen bei der analytischen Elektronenmikroskopie
DE102012007868A1 (de) * 2012-04-19 2013-10-24 Carl Zeiss Microscopy Gmbh Transmissionselektronenmikroskopiesystem
JP6355318B2 (ja) * 2012-11-15 2018-07-11 株式会社日立ハイテクサイエンス 断面加工観察方法及び装置
US8933401B1 (en) * 2013-10-25 2015-01-13 Lawrence Livermore National Security, Llc System and method for compressive scanning electron microscopy
US9696268B2 (en) 2014-10-27 2017-07-04 Kla-Tencor Corporation Automated decision-based energy-dispersive x-ray methodology and apparatus
US9719950B2 (en) * 2015-02-25 2017-08-01 Fei Company Sample-specific reference spectra library
US10037865B2 (en) * 2015-09-14 2018-07-31 Jordan University Of Science And Technology System and method for providing real-time visual feedback to control multiple autonomous nano-robots
CN107473179B (zh) * 2016-06-08 2019-04-23 清华大学 一种表征二维纳米材料的方法
JP2019533819A (ja) * 2016-11-09 2019-11-21 アイメック・ヴェーゼットウェーＩｍｅｃ Ｖｚｗ 組み合わされたｓｔｅｍとｅｄｓの断層撮影のための装置
CN111595883B (zh) * 2020-06-30 2023-02-17 中国科学院南京地质古生物研究所 大气环境中不规则固体材料表面元素分布的无损分析方法

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Publication number Priority date Publication date Assignee Title
JPS59163550A (ja) 1983-03-09 1984-09-14 Central Res Inst Of Electric Power Ind 電子線回折像の自動判別方法
JP2536019B2 (ja) 1988-02-17 1996-09-18 株式会社島津製作所 Ｘ線マイクロアナライザによる分析方法
JP2918983B2 (ja) 1990-04-27 1999-07-12 株式会社永田農業研究所 病虫害防除方法
US5369275A (en) * 1991-07-11 1994-11-29 International Superconductivity Technology Center Apparatus for solid surface analysis using X-ray spectroscopy
JP3224277B2 (ja) * 1992-07-16 2001-10-29 株式会社日立製作所 収束電子線回折図形を用いた歪み評価装置およびその評価方法
JP2777505B2 (ja) * 1992-07-29 1998-07-16 株式会社日立製作所 自動分析電子顕微鏡および分析評価方法
US5557104A (en) * 1995-10-24 1996-09-17 Texsem Laboratories, Inc. Method and apparatus for determining crystallographic characteristics in response to confidence factors
WO2002068944A1 (en) 2001-02-28 2002-09-06 Hitachi, Ltd. Method and apparatus for measuring physical properties of micro region
US6573502B2 (en) * 2001-03-12 2003-06-03 Jeol Ltd. Combined electron microscope

Also Published As

Publication number Publication date
EP2237306B1 (de) 2012-05-23
EP1463088A3 (de) 2007-01-10
EP1463088B9 (de) 2010-11-03
EP1463088A2 (de) 2004-09-29
EP2237306A1 (de) 2010-10-06
US20040183012A1 (en) 2004-09-23
US6992286B2 (en) 2006-01-31
JP2004279328A (ja) 2004-10-07
JP3888980B2 (ja) 2007-03-07
EP1463088B1 (de) 2010-08-25

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