DE602004028667D1 - Piezoelektrisches einkristallelement und herstellungsprozess dafür - Google Patents
Piezoelektrisches einkristallelement und herstellungsprozess dafürInfo
- Publication number
- DE602004028667D1 DE602004028667D1 DE200460028667 DE602004028667T DE602004028667D1 DE 602004028667 D1 DE602004028667 D1 DE 602004028667D1 DE 200460028667 DE200460028667 DE 200460028667 DE 602004028667 T DE602004028667 T DE 602004028667T DE 602004028667 D1 DE602004028667 D1 DE 602004028667D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing process
- crystal element
- piezoelectric crystal
- process therefor
- therefor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000013078 crystal Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8548—Lead-based oxides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/04—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/04—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning
- H10N30/045—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning by polarising
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/09—Forming piezoelectric or electrostrictive materials
- H10N30/093—Forming inorganic materials
- H10N30/095—Forming inorganic materials by melting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Compositions Of Oxide Ceramics (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004135313A JP4568529B2 (ja) | 2004-04-30 | 2004-04-30 | 圧電単結晶素子 |
| PCT/JP2004/016371 WO2005106986A1 (ja) | 2004-04-30 | 2004-10-28 | 圧電単結晶素子およびその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE602004028667D1 true DE602004028667D1 (de) | 2010-09-23 |
Family
ID=35241957
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE200460028667 Active DE602004028667D1 (de) | 2004-04-30 | 2004-10-28 | Piezoelektrisches einkristallelement und herstellungsprozess dafür |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7521844B2 (de) |
| EP (1) | EP1755177B1 (de) |
| JP (1) | JP4568529B2 (de) |
| KR (1) | KR100797214B1 (de) |
| CN (1) | CN100578833C (de) |
| DE (1) | DE602004028667D1 (de) |
| WO (1) | WO2005106986A1 (de) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4613032B2 (ja) * | 2004-05-06 | 2011-01-12 | Ｊｆｅミネラル株式会社 | 圧電単結晶素子およびその製造方法 |
| US7402938B2 (en) * | 2004-10-29 | 2008-07-22 | Jfe Mineral Co., Ltd. | Piezoelectric single crystal device |
| KR100929552B1 (ko) | 2007-12-28 | 2009-12-03 | 한국과학기술연구원 | [110] 방향으로 분극된 완화형 강유전체 단결정을 이용한에너지 하베스터 |
| US20100168582A1 (en) * | 2008-12-29 | 2010-07-01 | Boston Scientific Scimed, Inc. | High frequency transducers and methods of making the transducers |
| US8241519B2 (en) | 2009-03-17 | 2012-08-14 | Trs Technologies, Inc. | Relaxor-PT ferroelectric single crystals |
| CN101798219B (zh) * | 2010-02-26 | 2012-10-31 | 上海海事大学 | 用于水声换能器的压电陶瓷及其制备方法 |
| WO2012021608A2 (en) * | 2010-08-10 | 2012-02-16 | Trs Technologies, Inc. | Temperature and field stable relaxor-pt piezoelectric single crystals |
| JP5704725B2 (ja) * | 2012-08-24 | 2015-04-22 | 太陽誘電株式会社 | 圧電セラミックス及び圧電素子 |
| WO2015126321A1 (en) * | 2014-02-18 | 2015-08-27 | Microfine Materials Technologies Pte. Ltd. | Ultra broadband sound and ultrasonic transducer |
| US10488199B2 (en) | 2014-12-18 | 2019-11-26 | Innalabs Limited | Gyroscope with piezoelectric monocrystal transducers |
| CN106289385B (zh) * | 2015-06-11 | 2018-06-12 | 南京理工大学 | 一种多功能传感器 |
| CN113013321B (zh) * | 2021-02-07 | 2023-05-12 | 西安交通大学 | 一种压电单晶层叠驱动器的制备方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3413025B2 (ja) * | 1996-09-17 | 2003-06-03 | 株式会社東芝 | 圧電素子 |
| JP3588542B2 (ja) | 1997-12-09 | 2004-11-10 | Ｔｄｋ株式会社 | 圧電磁器組成物 |
| JP2001148522A (ja) * | 1999-09-07 | 2001-05-29 | Matsushita Electric Ind Co Ltd | 異方性圧電板及びそれを用いた圧電応用装置 |
| JP4516166B2 (ja) * | 1999-09-07 | 2010-08-04 | セイコーエプソン株式会社 | インクジェット式記録ヘッドの製造方法 |
| US6465937B1 (en) * | 2000-03-08 | 2002-10-15 | Koninklijke Philips Electronics N.V. | Single crystal thickness and width cuts for enhanced ultrasonic transducer |
| US6737789B2 (en) * | 2002-01-18 | 2004-05-18 | Leon J. Radziemski | Force activated, piezoelectric, electricity generation, storage, conditioning and supply apparatus and methods |
| JP3987744B2 (ja) * | 2002-03-25 | 2007-10-10 | 敏夫 小川 | ドメイン制御圧電単結晶素子 |
| KR100628812B1 (ko) * | 2003-05-21 | 2006-09-26 | 제이에프이 미네랄 가부시키가이샤 | 압전단결정 소자와 그 제조방법 |
| US7323805B2 (en) * | 2004-01-28 | 2008-01-29 | Kabushiki Kaisha Toshiba | Piezoelectric thin film device and method for manufacturing the same |
| US7402938B2 (en) * | 2004-10-29 | 2008-07-22 | Jfe Mineral Co., Ltd. | Piezoelectric single crystal device |
-
2004
- 2004-04-30 JP JP2004135313A patent/JP4568529B2/ja not_active Expired - Lifetime
- 2004-10-28 EP EP20040793351 patent/EP1755177B1/de active Active
- 2004-10-28 DE DE200460028667 patent/DE602004028667D1/de active Active
- 2004-10-28 US US11/579,002 patent/US7521844B2/en active Active
- 2004-10-28 KR KR20067022956A patent/KR100797214B1/ko not_active IP Right Cessation
- 2004-10-28 CN CN200480042913A patent/CN100578833C/zh active Active
- 2004-10-28 WO PCT/JP2004/016371 patent/WO2005106986A1/ja active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| JP2005317831A (ja) | 2005-11-10 |
| KR100797214B1 (ko) | 2008-01-23 |
| EP1755177B1 (de) | 2010-08-11 |
| EP1755177A1 (de) | 2007-02-21 |
| KR20070004942A (ko) | 2007-01-09 |
| CN1943054A (zh) | 2007-04-04 |
| US7521844B2 (en) | 2009-04-21 |
| US20070228896A1 (en) | 2007-10-04 |
| JP4568529B2 (ja) | 2010-10-27 |
| WO2005106986A1 (ja) | 2005-11-10 |
| EP1755177A4 (de) | 2009-01-07 |
| CN100578833C (zh) | 2010-01-06 |
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