DE602004024579D1 - Herstellungsverfahren für einen siliziumwafer - Google Patents
Herstellungsverfahren für einen siliziumwaferInfo
- Publication number
- DE602004024579D1 DE602004024579D1 DE602004024579T DE602004024579T DE602004024579D1 DE 602004024579 D1 DE602004024579 D1 DE 602004024579D1 DE 602004024579 T DE602004024579 T DE 602004024579T DE 602004024579 T DE602004024579 T DE 602004024579T DE 602004024579 D1 DE602004024579 D1 DE 602004024579D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- silicon wafer
- wafer
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Weting (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003401657A JP4273943B2 (ja) | 2003-12-01 | 2003-12-01 | シリコンウェーハの製造方法 |
PCT/JP2004/016001 WO2005055301A1 (fr) | 2003-12-01 | 2004-10-28 | Procede de production de plaquettes de silicium |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602004024579D1 true DE602004024579D1 (de) | 2010-01-21 |
Family
ID=34649983
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602004024579T Active DE602004024579D1 (de) | 2003-12-01 | 2004-10-28 | Herstellungsverfahren für einen siliziumwafer |
Country Status (7)
Country | Link |
---|---|
US (1) | US7645702B2 (fr) |
EP (1) | EP1699074B1 (fr) |
JP (1) | JP4273943B2 (fr) |
KR (1) | KR100703768B1 (fr) |
CN (1) | CN100435289C (fr) |
DE (1) | DE602004024579D1 (fr) |
WO (1) | WO2005055301A1 (fr) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005175106A (ja) * | 2003-12-10 | 2005-06-30 | Sumitomo Mitsubishi Silicon Corp | シリコンウェーハの加工方法 |
JP4954694B2 (ja) * | 2006-12-25 | 2012-06-20 | 昭和電工株式会社 | 湿式研磨方法および湿式研磨装置 |
JP2009302409A (ja) * | 2008-06-16 | 2009-12-24 | Sumco Corp | 半導体ウェーハの製造方法 |
JP2010016078A (ja) * | 2008-07-02 | 2010-01-21 | Shin Etsu Handotai Co Ltd | シリコン単結晶ウェーハ及びシリコン単結晶ウェーハの製造方法並びにシリコン単結晶ウェーハの評価方法 |
CA2740238A1 (fr) * | 2008-10-16 | 2010-04-22 | Enphase Energy, Inc. | Procede et appareil pour determiner une tension de fonctionnement pour empecher un claquage inverse de cellule photovoltaique durant une conversion electronique de puissance |
JP5463570B2 (ja) * | 2008-10-31 | 2014-04-09 | Sumco Techxiv株式会社 | ウェハ用両頭研削装置および両頭研削方法 |
JP5287982B2 (ja) * | 2009-04-13 | 2013-09-11 | 株式会社Sumco | シリコンエピタキシャルウェーハの製造方法 |
JP6281537B2 (ja) * | 2015-08-07 | 2018-02-21 | 信越半導体株式会社 | 半導体ウェーハの製造方法 |
CN109285762B (zh) * | 2018-09-29 | 2021-05-04 | 中国电子科技集团公司第四十六研究所 | 一种氮化镓外延用硅片边缘加工工艺 |
CN109545663A (zh) * | 2018-12-12 | 2019-03-29 | 中国电子科技集团公司第四十六研究所 | 一种高平坦度的硅腐蚀片加工工艺 |
CN110561200A (zh) * | 2019-08-02 | 2019-12-13 | 菲特晶(南京)电子有限公司 | 一种石英晶片加工工艺 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60197367A (ja) * | 1984-03-19 | 1985-10-05 | Toshiba Ceramics Co Ltd | 鏡面ウエハの製造方法 |
JP3202305B2 (ja) | 1992-02-17 | 2001-08-27 | 信越半導体株式会社 | 鏡面ウエーハの製造方法及び検査方法 |
JP2839822B2 (ja) | 1993-08-02 | 1998-12-16 | 三菱マテリアルシリコン株式会社 | 高平坦度ウェーハの製造方法 |
JP3134719B2 (ja) * | 1995-06-23 | 2001-02-13 | 信越半導体株式会社 | 半導体ウェーハ研磨用研磨剤及び研磨方法 |
JPH10135164A (ja) * | 1996-10-29 | 1998-05-22 | Komatsu Electron Metals Co Ltd | 半導体ウェハの製造方法 |
JPH10135165A (ja) * | 1996-10-29 | 1998-05-22 | Komatsu Electron Metals Co Ltd | 半導体ウェハの製法 |
JPH115564A (ja) * | 1997-06-17 | 1999-01-12 | Mitsubishi Motors Corp | 車両のサイドメンバ構造 |
JP3441979B2 (ja) | 1997-12-09 | 2003-09-02 | 信越半導体株式会社 | 半導体ウエーハの加工方法および半導体ウエーハ |
MY119304A (en) * | 1997-12-11 | 2005-04-30 | Shinetsu Handotai Kk | Silicon wafer etching method and silicon wafer etchant |
JP3358549B2 (ja) * | 1998-07-08 | 2002-12-24 | 信越半導体株式会社 | 半導体ウエーハの製造方法ならびにウエーハチャック |
US6227944B1 (en) * | 1999-03-25 | 2001-05-08 | Memc Electronics Materials, Inc. | Method for processing a semiconductor wafer |
JP3596405B2 (ja) * | 2000-02-10 | 2004-12-02 | 三菱住友シリコン株式会社 | 半導体ウェーハの製造方法 |
CN1203530C (zh) * | 2000-04-24 | 2005-05-25 | 三菱住友硅晶株式会社 | 半导体晶片的制造方法 |
JP2002025950A (ja) | 2000-06-30 | 2002-01-25 | Mitsubishi Materials Silicon Corp | 半導体ウェーハの製造方法 |
WO2002001616A1 (fr) | 2000-06-29 | 2002-01-03 | Shin-Etsu Handotai Co., Ltd. | Procede de traitement d'une plaquette de semi-conducteur et plaquette de semi-conducteur |
JP2003100701A (ja) * | 2001-09-27 | 2003-04-04 | Sumitomo Mitsubishi Silicon Corp | シリコンウェーハのエッチング方法及びこの方法を用いたシリコンウェーハの表裏面差別化方法 |
JP2003229392A (ja) * | 2001-11-28 | 2003-08-15 | Shin Etsu Handotai Co Ltd | シリコンウエーハの製造方法及びシリコンウエーハ並びにsoiウエーハ |
JP2003203890A (ja) * | 2002-01-07 | 2003-07-18 | Sumitomo Mitsubishi Silicon Corp | シリコンウェーハの製造方法 |
JP4075426B2 (ja) * | 2002-03-22 | 2008-04-16 | 株式会社Sumco | シリコンウェーハの製造方法 |
JP4192482B2 (ja) * | 2002-03-22 | 2008-12-10 | 株式会社Sumco | シリコンウェーハの製造方法 |
JP4093793B2 (ja) * | 2002-04-30 | 2008-06-04 | 信越半導体株式会社 | 半導体ウエーハの製造方法及びウエーハ |
-
2003
- 2003-12-01 JP JP2003401657A patent/JP4273943B2/ja not_active Expired - Lifetime
-
2004
- 2004-10-28 US US10/562,236 patent/US7645702B2/en active Active
- 2004-10-28 CN CNB2004800185820A patent/CN100435289C/zh active Active
- 2004-10-28 WO PCT/JP2004/016001 patent/WO2005055301A1/fr active Application Filing
- 2004-10-28 KR KR1020057024071A patent/KR100703768B1/ko active IP Right Grant
- 2004-10-28 EP EP04793109A patent/EP1699074B1/fr active Active
- 2004-10-28 DE DE602004024579T patent/DE602004024579D1/de active Active
Also Published As
Publication number | Publication date |
---|---|
CN1816900A (zh) | 2006-08-09 |
CN100435289C (zh) | 2008-11-19 |
US20070119817A1 (en) | 2007-05-31 |
EP1699074B1 (fr) | 2009-12-09 |
KR20060024801A (ko) | 2006-03-17 |
JP2005166809A (ja) | 2005-06-23 |
US7645702B2 (en) | 2010-01-12 |
KR100703768B1 (ko) | 2007-04-09 |
WO2005055301A1 (fr) | 2005-06-16 |
JP4273943B2 (ja) | 2009-06-03 |
EP1699074A1 (fr) | 2006-09-06 |
EP1699074A4 (fr) | 2008-06-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |