DE602004023038D1 - Halbleitervorrichtung mit Übergitter und Herstellungsverfahren - Google Patents

Halbleitervorrichtung mit Übergitter und Herstellungsverfahren

Info

Publication number
DE602004023038D1
DE602004023038D1 DE602004023038T DE602004023038T DE602004023038D1 DE 602004023038 D1 DE602004023038 D1 DE 602004023038D1 DE 602004023038 T DE602004023038 T DE 602004023038T DE 602004023038 T DE602004023038 T DE 602004023038T DE 602004023038 D1 DE602004023038 D1 DE 602004023038D1
Authority
DE
Germany
Prior art keywords
material layers
superlattice
semiconductor device
holes
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602004023038T
Other languages
English (en)
Inventor
Won-Seok Lee
Kyoung-Ho Ha
Joon-Seop Kwak
Ho-Sun Paek
Sung-Nam Lee
Tan Sakong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE602004023038D1 publication Critical patent/DE602004023038D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H01L29/151—Compositional structures
    • H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
    • H01L29/155—Comprising only semiconductor materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/173—The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
DE602004023038T 2003-08-04 2004-06-30 Halbleitervorrichtung mit Übergitter und Herstellungsverfahren Active DE602004023038D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020030053889A KR100580623B1 (ko) 2003-08-04 2003-08-04 초격자 구조의 반도체층을 갖는 반도체 소자 및 그 제조방법

Publications (1)

Publication Number Publication Date
DE602004023038D1 true DE602004023038D1 (de) 2009-10-22

Family

ID=33550313

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004023038T Active DE602004023038D1 (de) 2003-08-04 2004-06-30 Halbleitervorrichtung mit Übergitter und Herstellungsverfahren

Country Status (7)

Country Link
US (1) US6992318B2 (de)
EP (1) EP1505698B1 (de)
JP (1) JP2005057262A (de)
KR (1) KR100580623B1 (de)
CN (1) CN100391014C (de)
AT (1) ATE442669T1 (de)
DE (1) DE602004023038D1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070228385A1 (en) * 2006-04-03 2007-10-04 General Electric Company Edge-emitting light emitting diodes and methods of making the same
EP1883140B1 (de) * 2006-07-27 2013-02-27 OSRAM Opto Semiconductors GmbH LD oder LED mit Übergitter-Mantelschicht und Dotierungsgradienten
EP1883141B1 (de) * 2006-07-27 2017-05-24 OSRAM Opto Semiconductors GmbH LD oder LED mit Übergitter-Mantelschicht
EP1883119B1 (de) * 2006-07-27 2015-11-04 OSRAM Opto Semiconductors GmbH Halbleiter-Schichtstruktur mit Übergitter
JP4105216B2 (ja) * 2006-08-04 2008-06-25 三菱電機株式会社 半導体光素子の製造方法
KR20110006652A (ko) * 2008-03-25 2011-01-20 라티스 파워(지앙시) 코포레이션 양면 패시베이션을 갖는 반도체 발광 소자
JP2011077351A (ja) * 2009-09-30 2011-04-14 Sumitomo Electric Ind Ltd 発光素子
DE102009060749B4 (de) * 2009-12-30 2021-12-30 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
US8624222B2 (en) * 2011-10-21 2014-01-07 University Of Utah Research Foundation Homogeneous multiple band gap devices
EP2595193A1 (de) 2011-11-16 2013-05-22 Hitachi, Ltd. Mehrfach-Quantentopfstruktur
TWI536605B (zh) * 2013-08-20 2016-06-01 隆達電子股份有限公司 發光二極體
CN103594552B (zh) * 2013-10-22 2015-09-23 溧阳市东大技术转移中心有限公司 一种光伏电池的制造方法
JP6986349B2 (ja) 2014-05-27 2021-12-22 シランナ・ユー・ブイ・テクノロジーズ・プライベート・リミテッドSilanna Uv Technologies Pte Ltd ｎ型超格子及びｐ型超格子を備える電子デバイス
US11322643B2 (en) 2014-05-27 2022-05-03 Silanna UV Technologies Pte Ltd Optoelectronic device
CN106663718B (zh) * 2014-05-27 2019-10-01 斯兰纳Uv科技有限公司 光电装置
JP6636459B2 (ja) 2014-05-27 2020-01-29 シランナ・ユー・ブイ・テクノロジーズ・プライベート・リミテッドＳｉｌａｎｎａ Ｕｖ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｐｔｅ Ｌｔｄ 半導体構造と超格子とを用いた高度電子デバイス
CN104269740B (zh) * 2014-09-23 2018-01-30 中国科学院半导体研究所 一种激光器及其制作方法
US11355667B2 (en) * 2018-04-12 2022-06-07 Atomera Incorporated Method for making semiconductor device including vertically integrated optical and electronic devices and comprising a superlattice
CN116130555B (zh) * 2023-01-17 2024-02-09 苏州苏纳光电有限公司 在半导体脊型结构上制作电极的方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4205329A (en) * 1976-03-29 1980-05-27 Bell Telephone Laboratories, Incorporated Periodic monolayer semiconductor structures grown by molecular beam epitaxy
US4594603A (en) * 1982-04-22 1986-06-10 Board Of Trustees Of The University Of Illinois Semiconductor device with disordered active region
JPS60728A (ja) * 1983-06-16 1985-01-05 Sanyo Electric Co Ltd 分子線エピタキシヤル成長法
JPS6098615A (ja) * 1983-11-02 1985-06-01 Nippon Telegr & Teleph Corp <Ntt> 多層膜の製造方法
US4591889A (en) * 1984-09-14 1986-05-27 At&T Bell Laboratories Superlattice geometry and devices
JPH0779158B2 (ja) * 1988-11-19 1995-08-23 新技術事業団 結合量子箱列構造半導体
JP3005985B2 (ja) * 1988-12-09 2000-02-07 ソニー株式会社 超格子の形成方法
JP2733725B2 (ja) * 1992-05-18 1998-03-30 日本電信電話株式会社 半導体結晶成長方法
JP2766763B2 (ja) * 1993-02-16 1998-06-18 日本電信電話株式会社 半導体量子細線の製造方法
JP3672678B2 (ja) * 1996-04-05 2005-07-20 富士通株式会社 量子半導体装置およびその製造方法
JP2930032B2 (ja) * 1996-09-26 1999-08-03 日本電気株式会社 Ｉｉ−ｖｉ族化合物半導体発光素子およびその製造方法
JP3679914B2 (ja) * 1997-02-12 2005-08-03 株式会社東芝 半導体発光装置及びその製造方法
JP2000244070A (ja) * 1999-02-19 2000-09-08 Sony Corp 半導体装置および半導体発光素子
KR100425341B1 (ko) * 2000-02-08 2004-03-31 삼성전기주식회사 질화물 반도체 발광 소자
JP4608731B2 (ja) 2000-04-27 2011-01-12 ソニー株式会社 半導体レーザの製造方法
US6853663B2 (en) * 2000-06-02 2005-02-08 Agilent Technologies, Inc. Efficiency GaN-based light emitting devices
JP3299739B2 (ja) * 2000-07-13 2002-07-08 士郎 酒井 発光素子
JP2002111131A (ja) 2000-09-28 2002-04-12 Sony Corp 半導体発光素子およびその製造方法
JP2003218469A (ja) * 2002-01-22 2003-07-31 Toshiba Corp 窒化物系半導体レーザ装置

Also Published As

Publication number Publication date
US6992318B2 (en) 2006-01-31
JP2005057262A (ja) 2005-03-03
CN1581528A (zh) 2005-02-16
KR100580623B1 (ko) 2006-05-16
CN100391014C (zh) 2008-05-28
EP1505698B1 (de) 2009-09-09
ATE442669T1 (de) 2009-09-15
KR20050017685A (ko) 2005-02-23
EP1505698A2 (de) 2005-02-09
US20050029506A1 (en) 2005-02-10
EP1505698A3 (de) 2006-04-26

Similar Documents

Publication Publication Date Title
DE602004023038D1 (de) Halbleitervorrichtung mit Übergitter und Herstellungsverfahren
WO2005013371A3 (en) Semiconductor device including band-engineered superlattice
WO2006127291A3 (en) Method for making a semiconductor device including a superlattice having at least one group of substantially undoped layers
WO2006107735A3 (en) Method for making a semiconductor device including a superlattice with regions defining a semiconductor junction
WO2006127269A3 (en) Semiconductor device including a superlattice having at least one group of substantially undoped layer
TW200701452A (en) Semiconductor device including a superlattice with regions defining a semiconductor junction
TW200520275A (en) Inorganic/organic hybrid nanolaminate barrier film
WO2007075942A3 (en) Electronic device including a selectively polable superlattice and associated methods
TW200742061A (en) Semiconductor device comprising a lattice matching layer
WO2008036062A3 (en) Method for making a semiconductor device including band-engineered superlattice using intermediate annealing
PL1726715T3 (pl) Elastyczna warstwa spodnia do nawierzchni i odpowiedni sposób wytwarzania
WO2006127225A3 (en) Semiconductor device comprising a superlattice dielectric interface layer
TW200729481A (en) Semiconductor device including a front side strained superlattice layer and a back side stress layer
TW200625742A (en) Method for fabricating lateral semiconductor device
JP2005310962A5 (de)
EP1801857A3 (de) Nichtflüchtige Multi-Bit-Speichervorrichtungen und Herstellungsverfahren dafür
WO2008003145A3 (en) Film structure with high oxygen barrier properties and method for manufacturing such a film structure
TW200627631A (en) Non-volatile memory and manufacturing method and operating method thereof
EP1184689A3 (de) Verfahren zur Herstellung eines Gegenstandes, der Material mit einer photonischen Bandlücke enthält
TW200711243A (en) Semiconductor laser device and method for fabricating the same
ATE301040T1 (de) Mehrschichtlaminat, verpackungsmaterial und aus diesem material hergestellte verpackungen
DE602004019322D1 (de) Halbleiterbauelement mit einer Quantentopfstruktur mit doppelten Barriereschichten, Halbleiterlasergerät basierend auf dem Halbleiterbauelement und Herstellungsverfahren für das Halbleiterbauelement und das Halbleiterlasergerät.
DE602004030466D1 (de) Mehrlagiger körper und herstellungsverfahren dafür
JP2006021491A5 (de)
ATE504106T1 (de) Halbleiterlaser mit interband-durchtunnelung und intersubband-übergang

Legal Events

Date Code Title Description
8364 No opposition during term of opposition