DE602004022860D1 - Verfahren zum versiegeln zweier platten mit ausbildung eines ohmschen kontakts dazwischen - Google Patents

Verfahren zum versiegeln zweier platten mit ausbildung eines ohmschen kontakts dazwischen

Info

Publication number
DE602004022860D1
DE602004022860D1 DE602004022860T DE602004022860T DE602004022860D1 DE 602004022860 D1 DE602004022860 D1 DE 602004022860D1 DE 602004022860 T DE602004022860 T DE 602004022860T DE 602004022860 T DE602004022860 T DE 602004022860T DE 602004022860 D1 DE602004022860 D1 DE 602004022860D1
Authority
DE
Germany
Prior art keywords
plates
formation
ohim
sealing
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602004022860T
Other languages
English (en)
Inventor
Stephane Pocas
Hubert Moriceau
Jean-Francois Michaud
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of DE602004022860D1 publication Critical patent/DE602004022860D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Element Separation (AREA)
  • Thin Film Transistor (AREA)
  • Secondary Cells (AREA)
  • Led Devices (AREA)
DE602004022860T 2003-12-23 2004-12-21 Verfahren zum versiegeln zweier platten mit ausbildung eines ohmschen kontakts dazwischen Active DE602004022860D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0351190A FR2864336B1 (fr) 2003-12-23 2003-12-23 Procede de scellement de deux plaques avec formation d'un contact ohmique entre celles-ci
PCT/FR2004/050742 WO2005064657A1 (fr) 2003-12-23 2004-12-21 Procede de scellement de deux plaques avec formation d'un contact ohmique entre celles-ci

Publications (1)

Publication Number Publication Date
DE602004022860D1 true DE602004022860D1 (de) 2009-10-08

Family

ID=34630635

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004022860T Active DE602004022860D1 (de) 2003-12-23 2004-12-21 Verfahren zum versiegeln zweier platten mit ausbildung eines ohmschen kontakts dazwischen

Country Status (7)

Country Link
US (1) US8975156B2 (de)
EP (1) EP1697975B1 (de)
JP (1) JP4884979B2 (de)
AT (1) ATE441205T1 (de)
DE (1) DE602004022860D1 (de)
FR (1) FR2864336B1 (de)
WO (1) WO2005064657A1 (de)

Families Citing this family (217)

* Cited by examiner, † Cited by third party
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ATE441205T1 (de) 2009-09-15
US8975156B2 (en) 2015-03-10
EP1697975B1 (de) 2009-08-26
FR2864336B1 (fr) 2006-04-28
JP4884979B2 (ja) 2012-02-29
JP2007535133A (ja) 2007-11-29

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