DE602004016598D1 - Integrierbarer, spannungsgesteuerter Hochfrequenzleistungsverstärker - Google Patents

Integrierbarer, spannungsgesteuerter Hochfrequenzleistungsverstärker

Info

Publication number
DE602004016598D1
DE602004016598D1 DE602004016598T DE602004016598T DE602004016598D1 DE 602004016598 D1 DE602004016598 D1 DE 602004016598D1 DE 602004016598 T DE602004016598 T DE 602004016598T DE 602004016598 T DE602004016598 T DE 602004016598T DE 602004016598 D1 DE602004016598 D1 DE 602004016598D1
Authority
DE
Germany
Prior art keywords
integrated
high frequency
power amplifier
frequency power
voltage controlled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE602004016598T
Other languages
English (en)
Inventor
Yun-Seong Eo
Gea-Ok Cho
Kwang-Du Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE602004016598D1 publication Critical patent/DE602004016598D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • H03F1/0266—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A by using a signal derived from the input signal

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
DE602004016598T 2003-05-19 2004-03-19 Integrierbarer, spannungsgesteuerter Hochfrequenzleistungsverstärker Expired - Fee Related DE602004016598D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020030031726A KR100663450B1 (ko) 2003-05-19 2003-05-19 집적 가능한 전압조정 초고주파 전력 증폭기

Publications (1)

Publication Number Publication Date
DE602004016598D1 true DE602004016598D1 (de) 2008-10-30

Family

ID=33095661

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004016598T Expired - Fee Related DE602004016598D1 (de) 2003-05-19 2004-03-19 Integrierbarer, spannungsgesteuerter Hochfrequenzleistungsverstärker

Country Status (6)

Country Link
US (1) US6972628B2 (de)
EP (1) EP1480332B1 (de)
JP (1) JP2004350276A (de)
KR (1) KR100663450B1 (de)
CN (1) CN100382429C (de)
DE (1) DE602004016598D1 (de)

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JP4417069B2 (ja) * 2003-10-15 2010-02-17 Ｎｅｃエレクトロニクス株式会社 半導体集積回路
TWI231645B (en) * 2003-10-16 2005-04-21 Novatek Microelectronics Corp Power amplifier having active bias circuit
KR100714165B1 (ko) * 2004-08-27 2007-05-02 삼성전자주식회사 이동 통신 단말에서의 전압 이득 제어 회로
CN101453823B (zh) 2007-12-06 2011-09-14 北京北方微电子基地设备工艺研究中心有限责任公司 一种控制射频放电系统直流偏压的装置和方法
US8552803B2 (en) * 2007-12-18 2013-10-08 Qualcomm Incorporated Amplifier with dynamic bias
US20110006846A1 (en) * 2008-04-08 2011-01-13 Mitsubishi Electric Corporation High-frequency amplifier
DE102009057544A1 (de) * 2009-12-09 2011-06-16 Eads Deutschland Gmbh Begrenzerschaltung
US8278963B2 (en) * 2010-04-12 2012-10-02 Sige Semiconductor Inc. Power detector and method for detecting power
WO2012102342A1 (ja) * 2011-01-27 2012-08-02 京セラ株式会社 電力増幅回路ならびにそれを用いた送信装置および通信装置
CN102655434A (zh) * 2011-03-02 2012-09-05 苏州英诺迅科技有限公司 射频功率放大器功率检测装置
KR101300324B1 (ko) * 2011-11-22 2013-08-28 삼성전기주식회사 전력 증폭기
CN103166587A (zh) * 2011-12-16 2013-06-19 富泰华工业（深圳）有限公司 音频处理电路
CN103023440B (zh) * 2012-12-20 2015-10-07 中国科学院微电子研究所 一种提高功率放大器线性度的电路
JP6341461B2 (ja) * 2013-09-11 2018-06-13 株式会社村田製作所 電力増幅器
US9014637B1 (en) * 2013-09-27 2015-04-21 Intel Corporation Dynamic switching frequency control of an on-chip or integrated voltage regulator
CN104579237A (zh) * 2013-10-24 2015-04-29 北京同方吉兆科技有限公司 一种大功率高效射频-直流转换器
KR20150060173A (ko) * 2013-11-26 2015-06-03 삼성전기주식회사 전력 증폭기
CN103986425A (zh) * 2014-04-30 2014-08-13 无锡中普微电子有限公司 基于射频直流反馈的功率放大器
US9941842B2 (en) * 2015-01-16 2018-04-10 Qualcomm Incorporated Amplifier bias circuit
CN106849879B (zh) * 2015-12-04 2020-08-04 财团法人工业技术研究院 功率放大器电路
CN105554421B (zh) * 2015-12-10 2019-12-13 上海集成电路研发中心有限公司 一种全局像元非线性补偿结构
CN106936392A (zh) * 2015-12-30 2017-07-07 南京理工大学 一种改进的磁耦合谐振式无线电能传输e类功率放大器
CN106026939B (zh) * 2016-07-13 2018-12-04 深圳市蓝狮微电子有限公司 一种提高射频功率放大器线性度的装置
US20180061984A1 (en) * 2016-08-29 2018-03-01 Macom Technology Solutions Holdings, Inc. Self-biasing and self-sequencing of depletion-mode transistors
US10560062B2 (en) 2016-11-18 2020-02-11 Macom Technology Solutions Holdings, Inc. Programmable biasing for pin diode drivers
JP2018142833A (ja) * 2017-02-27 2018-09-13 株式会社村田製作所 電力増幅回路
CN107196613A (zh) * 2017-04-17 2017-09-22 锐迪科微电子（上海）有限公司 一种实现过压保护的功率放大器
US20180358886A1 (en) 2017-06-09 2018-12-13 MACOM Technology Solution Holdings, Inc. Integrated solution for multi-voltage generation with thermal protection
CN109314491B (zh) * 2018-03-16 2022-08-16 深圳市汇顶科技股份有限公司 功率放大器及平衡数字输出信号的上升和下降时间的方法
CN109150117B (zh) * 2018-07-25 2023-06-02 北京新岸线移动通信技术有限公司 一种用于cmos pa的自适应偏置电路
JP2021184526A (ja) * 2020-05-21 2021-12-02 住友電気工業株式会社 ドハティ増幅器
EP3930185A1 (de) * 2020-06-26 2021-12-29 NXP USA, Inc. Verstärkerschaltung mit einem ausgangsbegrenzer
CN112865727B (zh) * 2021-01-22 2024-04-12 上海华虹宏力半导体制造有限公司 一种动态偏置的功率放大器
CN114189292B (zh) * 2021-12-03 2023-06-13 深圳飞骧科技股份有限公司 功率检测电路、功率放大器模块及射频前端架构
CN115459716B (zh) * 2022-09-20 2023-06-23 广东工业大学 用于soi射频功率放大器的偏置电路及射频功率放大器

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US3900823A (en) * 1973-03-28 1975-08-19 Nathan O Sokal Amplifying and processing apparatus for modulated carrier signals
US4377788A (en) * 1981-01-29 1983-03-22 Rca Corporation Signal expander
US4465981A (en) * 1982-09-27 1984-08-14 Rca Corporation Adaptive control signal filter for audio signal expander
JP2723702B2 (ja) * 1991-07-31 1998-03-09 日本電気株式会社 線形補償回路
JPH05267585A (ja) 1992-03-19 1993-10-15 Mitsubishi Electric Corp 増幅器
US5809410A (en) * 1993-07-12 1998-09-15 Harris Corporation Low voltage RF amplifier and mixed with single bias block and method
US5410275A (en) * 1993-12-13 1995-04-25 Motorola Inc. Amplifier circuit suitable for use in a radiotelephone
EP0854569B1 (de) 1997-01-21 2003-04-09 Matsushita Electric Industrial Co., Ltd. Hochfrequenzleistungsverstärker
JPH10256839A (ja) * 1997-03-07 1998-09-25 Nippon Columbia Co Ltd 電力増幅装置
US6304145B1 (en) * 2000-02-02 2001-10-16 Nokia Networks Oy Large signal amplifier gain compensation circuit
JP4014072B2 (ja) * 2000-03-31 2007-11-28 株式会社ルネサステクノロジ 電力増幅器モジュール
WO2002003544A1 (fr) * 2000-06-30 2002-01-10 Mitsubishi Denki Kabushiki Kaisha Amplificateur haute frequence
DE60032232T2 (de) * 2000-08-24 2007-09-20 Sony Deutschland Gmbh FET-Transistor mit Leistungsdetektor

Also Published As

Publication number Publication date
US6972628B2 (en) 2005-12-06
CN100382429C (zh) 2008-04-16
KR20040099676A (ko) 2004-12-02
EP1480332B1 (de) 2008-09-17
EP1480332A3 (de) 2004-12-08
CN1551486A (zh) 2004-12-01
KR100663450B1 (ko) 2007-01-02
US20040232989A1 (en) 2004-11-25
EP1480332A2 (de) 2004-11-24
JP2004350276A (ja) 2004-12-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee