DE602004022750D1 - Spannungsgesteuerte Hochfrequenzoszillatorschaltung - Google Patents

Spannungsgesteuerte Hochfrequenzoszillatorschaltung

Info

Publication number
DE602004022750D1
DE602004022750D1 DE602004022750T DE602004022750T DE602004022750D1 DE 602004022750 D1 DE602004022750 D1 DE 602004022750D1 DE 602004022750 T DE602004022750 T DE 602004022750T DE 602004022750 T DE602004022750 T DE 602004022750T DE 602004022750 D1 DE602004022750 D1 DE 602004022750D1
Authority
DE
Germany
Prior art keywords
high frequency
voltage controlled
oscillator circuit
frequency oscillator
controlled high
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602004022750T
Other languages
English (en)
Inventor
Sang-Yoon Jeon
Heung-Bae Lee
Chun-Deok Suh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE602004022750D1 publication Critical patent/DE602004022750D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/20—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising resistance and either capacitance or inductance, e.g. phase-shift oscillator
    • H03B5/24—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising resistance and either capacitance or inductance, e.g. phase-shift oscillator active element in amplifier being semiconductor device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/354—Astable circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
    • H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
    • H03B5/1215—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair the current source or degeneration circuit being in common to both transistors of the pair, e.g. a cross-coupled long-tailed pair
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
    • H03B5/1246—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising transistors used to provide a variable capacitance
    • H03B5/1253—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising transistors used to provide a variable capacitance the transistors being field-effect transistors
DE602004022750T 2003-09-23 2004-09-21 Spannungsgesteuerte Hochfrequenzoszillatorschaltung Active DE602004022750D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-2003-0066024A KR100537511B1 (ko) 2003-09-23 2003-09-23 고주파 전압제어발진기

Publications (1)

Publication Number Publication Date
DE602004022750D1 true DE602004022750D1 (de) 2009-10-08

Family

ID=34192263

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004022750T Active DE602004022750D1 (de) 2003-09-23 2004-09-21 Spannungsgesteuerte Hochfrequenzoszillatorschaltung

Country Status (5)

Country Link
US (1) US7145407B2 (de)
EP (1) EP1519480B1 (de)
JP (1) JP4815580B2 (de)
KR (1) KR100537511B1 (de)
DE (1) DE602004022750D1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7477495B2 (en) * 2005-12-13 2009-01-13 Silicon Laboratories, Inc. System and method of ESD protection of integrated circuit components
US20080258827A1 (en) * 2007-04-19 2008-10-23 Mediatek Inc. Radio frequency voltage controlled oscillators
US7663445B2 (en) * 2008-01-09 2010-02-16 Taiwan Semiconductor Manufacturing Co., Ltd. Voltage-control oscillator circuits with combined MOS and bipolar device
CN102412784B (zh) * 2011-11-30 2014-05-14 中国科学院微电子研究所 射级跟随器及采用该射级跟随器的压控振荡器
US10290630B2 (en) * 2014-04-16 2019-05-14 Newport Fab, Llc BiCMOS integration with reduced masking steps
US10297591B2 (en) * 2014-04-16 2019-05-21 Newport Fab, Llc BiCMOS integration using a shared SiGe layer

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19808377B4 (de) * 1998-02-27 2005-08-04 Infineon Technologies Ag Vollintegrierbare spannungsgesteuerte Oszillatorschaltung
JP2001345681A (ja) * 2000-05-31 2001-12-14 Matsushita Electric Ind Co Ltd 発振装置
US6469587B2 (en) * 2000-12-04 2002-10-22 Agere Systems Guardian Corp. Differential LC voltage-controlled oscillator
JP2002329365A (ja) * 2001-04-27 2002-11-15 Ricoh Co Ltd 差動リニアアンプ回路
KR100423502B1 (ko) * 2001-11-20 2004-03-18 삼성전자주식회사 엘씨공진기와 차동증폭기를 이용한 전압제어발진기
US6764891B2 (en) * 2002-02-26 2004-07-20 Intel Corporation Physically defined varactor in a CMOS process

Also Published As

Publication number Publication date
JP4815580B2 (ja) 2011-11-16
EP1519480A1 (de) 2005-03-30
JP2005102226A (ja) 2005-04-14
EP1519480B1 (de) 2009-08-26
KR20050029812A (ko) 2005-03-29
KR100537511B1 (ko) 2005-12-19
US7145407B2 (en) 2006-12-05
US20050062553A1 (en) 2005-03-24

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Legal Events

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8364 No opposition during term of opposition