DE602004016147D1 - Plasma-ashing-vorrichtung mit endpunktdetektionssystem - Google Patents

Plasma-ashing-vorrichtung mit endpunktdetektionssystem

Info

Publication number
DE602004016147D1
DE602004016147D1 DE602004016147T DE602004016147T DE602004016147D1 DE 602004016147 D1 DE602004016147 D1 DE 602004016147D1 DE 602004016147 T DE602004016147 T DE 602004016147T DE 602004016147 T DE602004016147 T DE 602004016147T DE 602004016147 D1 DE602004016147 D1 DE 602004016147D1
Authority
DE
Germany
Prior art keywords
detection system
point detection
plasma ashing
final point
ashing device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004016147T
Other languages
English (en)
Inventor
Aseem Srivastava
Palanikumaran Sakthivel
Thomas Buckley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Axcelis Technologies Inc
Original Assignee
Axcelis Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axcelis Technologies Inc filed Critical Axcelis Technologies Inc
Publication of DE602004016147D1 publication Critical patent/DE602004016147D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3342—Resist stripping

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
DE602004016147T 2003-05-22 2004-05-21 Plasma-ashing-vorrichtung mit endpunktdetektionssystem Expired - Lifetime DE602004016147D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/249,964 US20040235299A1 (en) 2003-05-22 2003-05-22 Plasma ashing apparatus and endpoint detection process
PCT/US2004/016075 WO2004107413A2 (en) 2003-05-22 2004-05-21 Plasma ashing apparatus and endpoint detection process

Publications (1)

Publication Number Publication Date
DE602004016147D1 true DE602004016147D1 (de) 2008-10-09

Family

ID=33449402

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004016147T Expired - Lifetime DE602004016147D1 (de) 2003-05-22 2004-05-21 Plasma-ashing-vorrichtung mit endpunktdetektionssystem

Country Status (8)

Country Link
US (2) US20040235299A1 (de)
EP (1) EP1625610B1 (de)
JP (1) JP4788917B2 (de)
KR (1) KR101227199B1 (de)
CN (1) CN1802722B (de)
DE (1) DE602004016147D1 (de)
TW (1) TWI233641B (de)
WO (1) WO2004107413A2 (de)

Cited By (1)

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CN107941757A (zh) * 2016-09-28 2018-04-20 朗姆研究公司 原位检测衬底处理系统的衬底区域中的氧的系统和方法

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WO2004107413A2 (en) 2004-12-09
JP2007501534A (ja) 2007-01-25
WO2004107413A3 (en) 2006-02-16
EP1625610B1 (de) 2008-08-27
US20100055807A1 (en) 2010-03-04
KR20060017806A (ko) 2006-02-27
KR101227199B1 (ko) 2013-01-28
CN1802722A (zh) 2006-07-12
TWI233641B (en) 2005-06-01
EP1625610A2 (de) 2006-02-15
TW200503087A (en) 2005-01-16
US20040235299A1 (en) 2004-11-25
US8268181B2 (en) 2012-09-18
CN1802722B (zh) 2010-09-29

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