DE60332788D1 - Elektrostatische Kapazitätsdetektionsvorrichtung - Google Patents

Elektrostatische Kapazitätsdetektionsvorrichtung

Info

Publication number
DE60332788D1
DE60332788D1 DE60332788T DE60332788T DE60332788D1 DE 60332788 D1 DE60332788 D1 DE 60332788D1 DE 60332788 T DE60332788 T DE 60332788T DE 60332788 T DE60332788 T DE 60332788T DE 60332788 D1 DE60332788 D1 DE 60332788D1
Authority
DE
Germany
Prior art keywords
detection device
electrostatic capacity
capacity detection
electrostatic
detection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60332788T
Other languages
English (en)
Inventor
Mitsutoshi Miyasaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Application granted granted Critical
Publication of DE60332788D1 publication Critical patent/DE60332788D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06VIMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12Fingerprints or palmprints
    • G06V40/13Sensors therefor
    • G06V40/1306Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing

Landscapes

  • Engineering & Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Multimedia (AREA)
  • Theoretical Computer Science (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)
  • Image Input (AREA)
  • Thin Film Transistor (AREA)
DE60332788T 2002-03-04 2003-03-04 Elektrostatische Kapazitätsdetektionsvorrichtung Expired - Lifetime DE60332788D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002058071A JP3858728B2 (ja) 2002-03-04 2002-03-04 静電容量検出装置

Publications (1)

Publication Number Publication Date
DE60332788D1 true DE60332788D1 (de) 2010-07-15

Family

ID=27751071

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60332788T Expired - Lifetime DE60332788D1 (de) 2002-03-04 2003-03-04 Elektrostatische Kapazitätsdetektionsvorrichtung

Country Status (4)

Country Link
US (1) US7127089B2 (de)
EP (1) EP1343111B1 (de)
JP (1) JP3858728B2 (de)
DE (1) DE60332788D1 (de)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3719435B2 (ja) 2002-12-27 2005-11-24 セイコーエプソン株式会社 指紋照合方法及び指紋照合装置
JP3775601B2 (ja) 2003-04-17 2006-05-17 セイコーエプソン株式会社 静電容量検出装置及びその駆動方法、指紋センサ並びにバイオメトリクス認証装置
JP4003750B2 (ja) 2003-04-17 2007-11-07 セイコーエプソン株式会社 静電容量検出装置
JP2005069869A (ja) 2003-08-25 2005-03-17 Seiko Epson Corp 静電容量検出装置及びその駆動方法、指紋センサ並びにバイオメトリクス認証装置
JP3858865B2 (ja) 2003-08-29 2006-12-20 セイコーエプソン株式会社 静電容量検出装置
JP3858864B2 (ja) 2003-08-29 2006-12-20 セイコーエプソン株式会社 静電容量検出装置
JP4396814B2 (ja) 2003-09-01 2010-01-13 セイコーエプソン株式会社 静電容量検出装置及び電子機器
JP4432625B2 (ja) 2003-09-05 2010-03-17 セイコーエプソン株式会社 静電容量検出装置
DE602004017768D1 (de) 2003-09-24 2008-12-24 Authentec Inc Biometrischer fingersensor mit über dünnfilm- und brennkristall-substrate verteilter sensorelektronik und diesbezügliche verfahren
US7075316B2 (en) * 2003-10-02 2006-07-11 Alps Electric Co., Ltd. Capacitance detector circuit, capacitance detection method, and fingerprint sensor using the same
JP3909712B2 (ja) 2003-10-10 2007-04-25 セイコーエプソン株式会社 静電容量検出装置
JP2005233688A (ja) 2004-02-17 2005-09-02 Seiko Epson Corp 静電容量検出装置、指紋センサ、バイオメトリクス認証装置、及び静電容量検出条件の探索方法
JP2005294466A (ja) * 2004-03-31 2005-10-20 Oht Inc センサ及び該センサを用いた検査装置
GB2412775A (en) * 2004-03-31 2005-10-05 Seiko Epson Corp Fingerprint scanner and method of auto focusing one
JP4556577B2 (ja) * 2004-09-14 2010-10-06 セイコーエプソン株式会社 電子装置の駆動方法
JP2006133217A (ja) 2004-10-05 2006-05-25 Seiko Epson Corp 静電容量検出装置及びスマートカード
JP4441927B2 (ja) 2004-10-12 2010-03-31 セイコーエプソン株式会社 静電容量検出装置
JP2006138675A (ja) 2004-11-10 2006-06-01 Seiko Epson Corp 静電容量検出装置
US7705613B2 (en) * 2007-01-03 2010-04-27 Abhay Misra Sensitivity capacitive sensor
WO2008106764A1 (en) * 2007-03-05 2008-09-12 Arokia Nathan Sensor pixels, arrays and array systems and methods therefor
KR101108178B1 (ko) * 2010-07-27 2012-01-31 삼성모바일디스플레이주식회사 박막 트랜지스터 센서 및 박막 트랜지스터 제조 방법
KR20120017258A (ko) * 2010-08-18 2012-02-28 삼성모바일디스플레이주식회사 박막 대전 센서
TWI416387B (zh) 2010-08-24 2013-11-21 Au Optronics Corp 觸控面板
EP3087349A4 (de) * 2013-12-27 2017-08-30 BYD Company Limited Kapazitätserkennungsvorrichtung für fingerabdruckidentifiaktion und fingerabdruckidentifikationsvorrichtung damit
KR20160130747A (ko) 2013-12-30 2016-11-14 비와이디 컴퍼니 리미티드 지문을 검측하기 위한 센서, 지문 식별 장치, 및 지문 검측을 위한 센서의 제어 방법
US9946375B2 (en) 2015-06-30 2018-04-17 Synaptics Incorporated Active matrix capacitive fingerprint sensor with 2-TFT pixel architecture for display integration
US9958993B2 (en) 2015-06-30 2018-05-01 Synaptics Incorporated Active matrix capacitive fingerprint sensor with 1-TFT pixel architecture for display integration
US10325131B2 (en) 2015-06-30 2019-06-18 Synaptics Incorporated Active matrix capacitive fingerprint sensor for display integration based on charge sensing by a 2-TFT pixel architecture
US9880688B2 (en) 2015-08-05 2018-01-30 Synaptics Incorporated Active matrix capacitive sensor for common-mode cancellation
JP6502814B2 (ja) * 2015-09-25 2019-04-17 京セラ株式会社 指紋センサー用配線基板
JP2017063163A (ja) * 2015-09-25 2017-03-30 京セラ株式会社 指紋センサー用配線基板
US10216972B2 (en) 2017-01-13 2019-02-26 Synaptics Incorporated Pixel architecture and driving scheme for biometric sensing
US10430633B2 (en) 2017-01-13 2019-10-01 Synaptics Incorporated Pixel architecture and driving scheme for biometric sensing

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4429413A (en) * 1981-07-30 1984-01-31 Siemens Corporation Fingerprint sensor
US6049620A (en) 1995-12-15 2000-04-11 Veridicom, Inc. Capacitive fingerprint sensor with adjustable gain
GB9608747D0 (en) 1996-04-26 1996-07-03 Philips Electronics Nv Fingerprint sensing devices and systems incorporating such
JP3874217B2 (ja) 1997-10-13 2007-01-31 ソニー株式会社 指紋読取り装置及びその方法
JP3102395B2 (ja) 1997-11-27 2000-10-23 日本電気株式会社 指紋検出装置
GB9804539D0 (en) * 1998-03-05 1998-04-29 Philips Electronics Nv Fingerprint sensing devices and systems incorporating such
JP3809733B2 (ja) 1998-02-25 2006-08-16 セイコーエプソン株式会社 薄膜トランジスタの剥離方法
JP3044660B1 (ja) 1999-06-04 2000-05-22 日本電信電話株式会社 表面形状認識用センサ回路
DE69933339T8 (de) * 1998-07-02 2007-09-13 Nippon Telegraph And Telephone Corp. Nachweisvorrichtung für kleine Kapazitätsänderungen
JP2000346610A (ja) 1999-03-31 2000-12-15 Mitsubishi Electric Corp 凹凸検出センサ、凹凸検出装置、指紋照合装置および個人判別装置
DE60032286T8 (de) * 1999-06-10 2007-09-27 Nippon Telegraph And Telephone Corp. Gerät zur Erkennung von Oberflächengestalten
JP2001056204A (ja) 1999-08-19 2001-02-27 Sony Corp 静電容量式指紋センサ
US6448790B1 (en) * 1999-10-26 2002-09-10 Citizen Watch Co., Ltd. Electrostatic capacitance detecting device
JP2001311752A (ja) 1999-10-26 2001-11-09 Citizen Watch Co Ltd 静電容量検出装置
JP2001133213A (ja) 1999-11-08 2001-05-18 Sony Corp 半導体装置およびその製造方法
GB2370410A (en) * 2000-12-22 2002-06-26 Seiko Epson Corp Thin film transistor sensor
JP3417402B2 (ja) 2001-04-16 2003-06-16 セイコーエプソン株式会社 薄膜半導体装置の製造方法

Also Published As

Publication number Publication date
EP1343111A3 (de) 2004-08-11
US7127089B2 (en) 2006-10-24
US20030222659A1 (en) 2003-12-04
EP1343111B1 (de) 2010-06-02
JP3858728B2 (ja) 2006-12-20
EP1343111A2 (de) 2003-09-10
JP2003254706A (ja) 2003-09-10

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