DE60142419D1 - Plasmaerzeugungsverfahren und -gerät sowie Halbleitervorrichtungsherstellungsverfahren und -gerät - Google Patents

Plasmaerzeugungsverfahren und -gerät sowie Halbleitervorrichtungsherstellungsverfahren und -gerät

Info

Publication number
DE60142419D1
DE60142419D1 DE60142419T DE60142419T DE60142419D1 DE 60142419 D1 DE60142419 D1 DE 60142419D1 DE 60142419 T DE60142419 T DE 60142419T DE 60142419 T DE60142419 T DE 60142419T DE 60142419 D1 DE60142419 D1 DE 60142419D1
Authority
DE
Germany
Prior art keywords
discharge electrode
substrate
discharge
plasma generating
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60142419T
Other languages
English (en)
Inventor
Hideo Yamakoshi
Koji Satake
Yoshiaki Takeuchi
Hiroshi Mashima
Tatsufumi Aoi
Masayoshi Murata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Heavy Industries Ltd
Original Assignee
Mitsubishi Heavy Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000069044A external-priority patent/JP3316490B2/ja
Priority claimed from JP2000085281A external-priority patent/JP3377773B2/ja
Application filed by Mitsubishi Heavy Industries Ltd filed Critical Mitsubishi Heavy Industries Ltd
Application granted granted Critical
Publication of DE60142419D1 publication Critical patent/DE60142419D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
DE60142419T 2000-03-13 2001-01-11 Plasmaerzeugungsverfahren und -gerät sowie Halbleitervorrichtungsherstellungsverfahren und -gerät Expired - Lifetime DE60142419D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000069044A JP3316490B2 (ja) 2000-03-13 2000-03-13 放電電極への給電方法、高周波プラズマ生成方法および半導体製造方法
JP2000085281A JP3377773B2 (ja) 2000-03-24 2000-03-24 放電電極への給電方法、高周波プラズマ発生方法および半導体製造方法

Publications (1)

Publication Number Publication Date
DE60142419D1 true DE60142419D1 (de) 2010-08-05

Family

ID=26587336

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60142419T Expired - Lifetime DE60142419D1 (de) 2000-03-13 2001-01-11 Plasmaerzeugungsverfahren und -gerät sowie Halbleitervorrichtungsherstellungsverfahren und -gerät

Country Status (8)

Country Link
US (1) US6456010B2 (de)
EP (2) EP2190004A3 (de)
KR (1) KR100449370B1 (de)
AT (1) ATE472170T1 (de)
AU (1) AU751927B2 (de)
DE (1) DE60142419D1 (de)
ES (1) ES2345602T3 (de)
TW (1) TW507256B (de)

Families Citing this family (112)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3497092B2 (ja) * 1998-07-23 2004-02-16 名古屋大学長 プラズマ密度情報測定方法、および測定に用いられるプローブ、並びにプラズマ密度情報測定装置
JP4592867B2 (ja) * 2000-03-27 2010-12-08 株式会社半導体エネルギー研究所 平行平板形プラズマｃｖｄ装置及びドライクリーニングの方法
JP4109861B2 (ja) * 2000-12-12 2008-07-02 キヤノン株式会社 真空処理方法
JP4039834B2 (ja) * 2001-09-28 2008-01-30 株式会社荏原製作所 エッチング方法及びエッチング装置
KR100557842B1 (ko) * 2001-12-10 2006-03-10 동경 엘렉트론 주식회사 고주파 전원 및 그 제어 방법 및 플라즈마 처리 장치
DE60219580T2 (de) * 2001-12-20 2007-12-27 Canon K.K. Verfahren und Vorrichtung zur Plasmabearbeitung
TWI241868B (en) * 2002-02-06 2005-10-11 Matsushita Electric Ind Co Ltd Plasma processing method and apparatus
JP3897620B2 (ja) * 2002-03-14 2007-03-28 三菱重工業株式会社 高周波電力供給構造およびそれを備えたプラズマｃｖｄ装置
US20030209518A1 (en) * 2002-05-08 2003-11-13 Taiwan Semiconductor Manufacturing Co., Ltd. Method of detecting abnormal chamber conditions in etcher
US6703080B2 (en) 2002-05-20 2004-03-09 Eni Technology, Inc. Method and apparatus for VHF plasma processing with load mismatch reliability and stability
WO2004004236A2 (en) * 2002-06-27 2004-01-08 Snap-On Incorporated Portal for distributing business and product information
JP3872741B2 (ja) * 2002-10-01 2007-01-24 三菱重工業株式会社 プラズマ化学蒸着装置
JP2004128159A (ja) * 2002-10-01 2004-04-22 Mitsubishi Heavy Ind Ltd 高周波プラズマ発生装置および高周波プラズマ発生方法
JP4159845B2 (ja) * 2002-10-07 2008-10-01 東京エレクトロン株式会社 プラズマ処理装置
US7445690B2 (en) 2002-10-07 2008-11-04 Tokyo Electron Limited Plasma processing apparatus
US7205034B2 (en) * 2002-10-29 2007-04-17 Mitsubishi Heavy Industries, Ltd. Method and device for generating uniform high-frequency plasma over large surface area used for plasma chemical vapor deposition apparatus
TW201041455A (en) * 2002-12-16 2010-11-16 Japan Science & Tech Agency Plasma generation device, plasma control method, and substrate manufacturing method
JP4099074B2 (ja) * 2003-01-27 2008-06-11 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
JP3846881B2 (ja) * 2003-04-04 2006-11-15 日本エー・エス・エム株式会社 プラズマ処理装置及びシリコン酸化膜を形成する方法
US7431857B2 (en) * 2003-08-15 2008-10-07 Applied Materials, Inc. Plasma generation and control using a dual frequency RF source
CN100562209C (zh) * 2004-02-09 2009-11-18 周星工程股份有限公司 用于产生等离子的电源供应器及包括其的等离子设备
US7695590B2 (en) 2004-03-26 2010-04-13 Applied Materials, Inc. Chemical vapor deposition plasma reactor having plural ion shower grids
US20060019502A1 (en) * 2004-07-23 2006-01-26 Park Beom S Method of controlling the film properties of a CVD-deposited silicon nitride film
US7785672B2 (en) * 2004-04-20 2010-08-31 Applied Materials, Inc. Method of controlling the film properties of PECVD-deposited thin films
US8083853B2 (en) 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US20050241670A1 (en) * 2004-04-29 2005-11-03 Dong Chun C Method for cleaning a reactor using electron attachment
US20050241671A1 (en) * 2004-04-29 2005-11-03 Dong Chun C Method for removing a substance from a substrate using electron attachment
US8328939B2 (en) 2004-05-12 2012-12-11 Applied Materials, Inc. Diffuser plate with slit valve compensation
US8074599B2 (en) 2004-05-12 2011-12-13 Applied Materials, Inc. Plasma uniformity control by gas diffuser curvature
US20090255759A1 (en) * 2008-04-10 2009-10-15 Barnes Gregory K Ladder stabilizing and standoff system
US7429410B2 (en) 2004-09-20 2008-09-30 Applied Materials, Inc. Diffuser gravity support
US20060105583A1 (en) * 2004-11-17 2006-05-18 Asm Japan K.K. Formation technology of nano-particle films having low dielectric constant
JP4830288B2 (ja) * 2004-11-22 2011-12-07 富士電機株式会社 プラズマ制御方法およびプラズマ制御装置
US20060191638A1 (en) * 2005-02-28 2006-08-31 International Business Machines Corporation Etching apparatus for semiconductor fabrication
KR100688550B1 (ko) * 2005-06-03 2007-03-02 삼성전자주식회사 반도체 장치 제조용 플라즈마 생성 장치
EP1753011B1 (de) 2005-08-13 2012-10-03 HÜTTINGER Elektronik GmbH + Co. KG Verfahren zur Erzeugung von Ansteuersignalen für HF-Leistungsgeneratoren
US7842355B2 (en) * 2005-11-01 2010-11-30 Applied Materials, Inc. System and method for modulation of power and power related functions of PECVD discharge sources to achieve new film properties
DE102006052061B4 (de) 2006-11-04 2009-04-23 Hüttinger Elektronik Gmbh + Co. Kg Verfahren zur Ansteuerung von zumindest zwei HF-Leistungsgeneratoren
US7988875B2 (en) * 2007-02-08 2011-08-02 Applied Materials, Inc. Differential etch rate control of layers deposited by chemical vapor deposition
WO2009012735A1 (de) * 2007-07-23 2009-01-29 Hüttinger Elektronik Gmbh + Co. Kg Plasmaversorgungseinrichtung
EP2232958A4 (de) * 2007-12-25 2011-01-19 Applied Materials Inc Asymmetrische hf-ansteuerung für die elektrode einer plasmakammer
WO2010044895A2 (en) * 2008-01-31 2010-04-22 Applied Materials, Inc Multiple phase rf power for electrode of plasma chamber
US8391025B2 (en) * 2008-05-02 2013-03-05 Advanced Energy Industries, Inc. Preemptive protection for a power convertor
US7791912B2 (en) * 2008-05-02 2010-09-07 Advanced Energy Industries, Inc. Protection method, system and apparatus for a power converter
US8372238B2 (en) * 2008-05-20 2013-02-12 Nordson Corporation Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes
JP4558067B2 (ja) * 2008-05-21 2010-10-06 シャープ株式会社 プラズマ処理装置
KR20110036932A (ko) * 2008-07-14 2011-04-12 유나이티드 솔라 오보닉 엘엘씨 기판 상에 처리되는 물질의 균일성 개선을 위한 증착 장치 및 그 사용 방법
US20100085129A1 (en) * 2008-10-06 2010-04-08 Asm Japan K.K. Impedance matching apparatus for plasma-enhanced reaction reactor
US20100104771A1 (en) * 2008-10-24 2010-04-29 Applied Materials, Inc. Electrode and power coupling scheme for uniform process in a large-area pecvd chamber
US20100104772A1 (en) * 2008-10-24 2010-04-29 Applied Materials,Inc. Electrode and power coupling scheme for uniform process in a large-area pecvd chamber
TW201023695A (en) * 2008-12-09 2010-06-16 Ind Tech Res Inst Capacitively coupled plasma (CCP) generator with two input ports
US8992723B2 (en) * 2009-02-13 2015-03-31 Applied Material, Inc. RF bus and RF return bus for plasma chamber electrode
DE102009015178B4 (de) * 2009-03-19 2012-09-06 Forschungs- Und Applikationslabor Plasmatechnik Gmbh Dresden Vorrichtung und Verfahren für die plasmagestützte Oberflächenmodifizierung von Substraten im Vakuum
KR100938782B1 (ko) * 2009-07-06 2010-01-27 주식회사 테스 플라즈마 발생용 전극 및 플라즈마 발생장치
US10049859B2 (en) * 2009-07-08 2018-08-14 Aixtron Se Plasma generating units for processing a substrate
US9039864B2 (en) * 2009-09-29 2015-05-26 Applied Materials, Inc. Off-center ground return for RF-powered showerhead
TWI432100B (zh) * 2009-11-25 2014-03-21 Ind Tech Res Inst 電漿產生裝置
TWI510001B (zh) * 2010-01-07 2015-11-21 And a high frequency and high power electromagnetic pulse protection method and apparatus therebetween
CN102725433B (zh) * 2010-01-21 2014-07-02 Oc欧瑞康巴尔斯公司 用以沉积防反射层于基材上的方法
US9089319B2 (en) 2010-07-22 2015-07-28 Plasma Surgical Investments Limited Volumetrically oscillating plasma flows
US9117767B2 (en) * 2011-07-21 2015-08-25 Lam Research Corporation Negative ion control for dielectric etch
US8765232B2 (en) 2011-01-10 2014-07-01 Plasmasi, Inc. Apparatus and method for dielectric deposition
US20120258555A1 (en) * 2011-04-11 2012-10-11 Lam Research Corporation Multi-Frequency Hollow Cathode and Systems Implementing the Same
US9111728B2 (en) 2011-04-11 2015-08-18 Lam Research Corporation E-beam enhanced decoupled source for semiconductor processing
US8900403B2 (en) 2011-05-10 2014-12-02 Lam Research Corporation Semiconductor processing system having multiple decoupled plasma sources
JP2013004172A (ja) * 2011-06-10 2013-01-07 Tokyo Electron Ltd 高周波電力分配装置およびそれを用いた基板処理装置
US20130119018A1 (en) * 2011-11-15 2013-05-16 Keren Jacobs Kanarik Hybrid pulsing plasma processing systems
US8883028B2 (en) 2011-12-28 2014-11-11 Lam Research Corporation Mixed mode pulsing etching in plasma processing systems
CN103327723A (zh) * 2012-03-23 2013-09-25 中微半导体设备(上海)有限公司 一种电容耦合等离子反应器及其控制方法
CN102693893B (zh) * 2012-04-28 2015-01-14 北京工业大学 一种利用调频的方式改善高频放电等离子体均匀性的方法
US9299956B2 (en) 2012-06-13 2016-03-29 Aixtron, Inc. Method for deposition of high-performance coatings and encapsulated electronic devices
US10526708B2 (en) 2012-06-19 2020-01-07 Aixtron Se Methods for forming thin protective and optical layers on substrates
KR20140086607A (ko) * 2012-12-28 2014-07-08 주식회사 테스 박막 고속 증착방법 및 증착장치
US10821542B2 (en) * 2013-03-15 2020-11-03 Mks Instruments, Inc. Pulse synchronization by monitoring power in another frequency band
US10224184B2 (en) * 2014-03-24 2019-03-05 Aes Global Holdings, Pte. Ltd System and method for control of high efficiency generator source impedance
KR102099525B1 (ko) * 2014-03-24 2020-04-09 에이이에스 글로벌 홀딩스 피티이 리미티드 고효율 제너레이터 소스 임피던스의 제어를 위한 시스템 및 방법
US10242844B2 (en) * 2014-09-30 2019-03-26 Lam Research Corporation Rotating RF electric field antenna for uniform plasma generation
JP2017059640A (ja) * 2015-09-15 2017-03-23 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
TWI588893B (zh) * 2016-05-13 2017-06-21 行政院原子能委員會核能研究所 高頻電漿裝置
US11694911B2 (en) * 2016-12-20 2023-07-04 Lam Research Corporation Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead
US20180308661A1 (en) * 2017-04-24 2018-10-25 Applied Materials, Inc. Plasma reactor with electrode filaments
TWI800505B (zh) * 2017-04-24 2023-05-01 美商應用材料股份有限公司 對電漿反應器的電極施加功率
US11355321B2 (en) 2017-06-22 2022-06-07 Applied Materials, Inc. Plasma reactor with electrode assembly for moving substrate
US11114284B2 (en) * 2017-06-22 2021-09-07 Applied Materials, Inc. Plasma reactor with electrode array in ceiling
US10510515B2 (en) 2017-06-22 2019-12-17 Applied Materials, Inc. Processing tool with electrically switched electrode assembly
TWI788390B (zh) 2017-08-10 2023-01-01 美商應用材料股份有限公司 用於電漿處理的分佈式電極陣列
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
KR102636879B1 (ko) * 2018-09-07 2024-02-15 삼성전자주식회사 플라즈마 센싱 장치, 이를 포함하는 플라즈마 모니토링 시스템 및 플라즈마 공정 제어 방법
CN109273341B (zh) * 2018-10-18 2021-01-08 北京北方华创微电子装备有限公司 一种等离子体工艺方法
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
US11908662B2 (en) 2018-11-21 2024-02-20 Applied Materials, Inc. Device and method for tuning plasma distribution using phase control
CN118315254A (zh) 2019-01-22 2024-07-09 应用材料公司 用于控制脉冲电压波形的反馈回路
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
JP6883620B2 (ja) * 2019-07-30 2021-06-09 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法およびプログラム
US12027351B2 (en) * 2020-01-10 2024-07-02 COMET Technologies USA, Inc. Plasma non-uniformity detection
US11462388B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Plasma processing assembly using pulsed-voltage and radio-frequency power
WO2022047227A2 (en) * 2020-08-28 2022-03-03 Plasma Surgical Investments Limited Systems, methods, and devices for generating predominantly radially expanded plasma flow
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US20220399185A1 (en) 2021-06-09 2022-12-15 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12111341B2 (en) 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5812347B2 (ja) 1981-02-09 1983-03-08 日本電信電話株式会社 プラズマエッチング装置
JPH01117018A (ja) * 1987-10-30 1989-05-09 Toshiba Corp プラズマ処理方法
JPH0457406A (ja) * 1990-06-27 1992-02-25 Shindengen Electric Mfg Co Ltd Ｒｆ発生装置のフェーズシフト回路
JPH0747823B2 (ja) 1991-12-06 1995-05-24 日新電機株式会社 プラズマｃｖｄ法及び装置
JP3067375B2 (ja) 1992-03-27 2000-07-17 松下電器産業株式会社 プラズマ加工装置及びプラズマ加工方法
KR100290748B1 (ko) * 1993-01-29 2001-06-01 히가시 데쓰로 플라즈마 처리장치
JP3406936B2 (ja) 1993-03-23 2003-05-19 キヤノン株式会社 超短波を用いたプラズマｃｖｄ法及び該プラズマｃｖｄ装置
JPH0714769A (ja) 1993-06-22 1995-01-17 Hitachi Ltd 半導体製造装置
JPH0786238A (ja) * 1993-06-29 1995-03-31 Kokusai Electric Co Ltd プラズマ励起用電極
US5849372A (en) * 1993-09-17 1998-12-15 Isis Innovation Limited RF plasma reactor and methods of generating RF plasma
JP3227949B2 (ja) 1993-11-18 2001-11-12 日新電機株式会社 プラズマ処理方法及び装置
JPH07226395A (ja) * 1994-02-15 1995-08-22 Matsushita Electric Ind Co Ltd 真空プラズマ処理装置
JPH08236294A (ja) 1995-02-28 1996-09-13 Jeol Ltd 高周波プラズマ応用装置
JP3425009B2 (ja) * 1995-05-30 2003-07-07 アネルバ株式会社 表面処理装置
EP0831679B1 (de) * 1995-06-05 2008-10-01 Musashino Kikai Co., Ltd. Leistungsversorgung für multielektroden-entladung
US5810963A (en) * 1995-09-28 1998-09-22 Kabushiki Kaisha Toshiba Plasma processing apparatus and method
JP3808973B2 (ja) 1996-05-15 2006-08-16 株式会社ダイヘン プラズマ処理装置
US5970907A (en) * 1997-01-27 1999-10-26 Canon Kabushiki Kaisha Plasma processing apparatus
JP3912868B2 (ja) 1997-10-03 2007-05-09 三菱重工業株式会社 プラズマ化学蒸着装置
AU726151B2 (en) * 1998-04-08 2000-11-02 Mitsubishi Heavy Industries, Ltd. Plasma CVD apparatus
JP3068604B2 (ja) * 1998-04-08 2000-07-24 三菱重工業株式会社 プラズマｃｖｄ装置
JP3631903B2 (ja) 1998-05-29 2005-03-23 三菱重工業株式会社 プラズマ化学蒸着装置
AU725612B2 (en) * 1998-05-29 2000-10-12 Mitsubishi Heavy Industries, Ltd. Plasma CVD apparatus
JP2965293B1 (ja) * 1998-11-10 1999-10-18 川崎重工業株式会社 電子ビーム励起プラズマ発生装置
JP3501669B2 (ja) 1998-11-26 2004-03-02 キヤノン株式会社 プラズマｃｖｄ法による堆積膜形成方法、及びプラズマ発生用高周波電極と該電極で構成したプラズマｃｖｄ装置
JP2000173982A (ja) * 1998-12-01 2000-06-23 Matsushita Electric Ind Co Ltd プラズマ処理装置およびプラズマ処理方法
JP2001035839A (ja) * 1999-05-18 2001-02-09 Hitachi Kokusai Electric Inc プラズマ生成装置および半導体製造方法
ES2226662T3 (es) * 2000-06-30 2005-04-01 Kronotec Ag Procedimiento para atender paneles de suelo.

Also Published As

Publication number Publication date
EP2190004A2 (de) 2010-05-26
EP2190004A3 (de) 2010-07-21
AU1110801A (en) 2001-09-20
US6456010B2 (en) 2002-09-24
KR20010091880A (ko) 2001-10-23
ES2345602T3 (es) 2010-09-28
KR100449370B1 (ko) 2004-09-21
EP1134773A2 (de) 2001-09-19
EP1134773B1 (de) 2010-06-23
TW507256B (en) 2002-10-21
AU751927B2 (en) 2002-08-29
US20010021422A1 (en) 2001-09-13
ATE472170T1 (de) 2010-07-15
EP1134773A3 (de) 2005-05-04

Similar Documents

Publication Publication Date Title
DE60142419D1 (de) Plasmaerzeugungsverfahren und -gerät sowie Halbleitervorrichtungsherstellungsverfahren und -gerät
EP2479783A3 (de) Vorrichtung und Verfahren zur Plasmaverarbeitung
ATE430376T1 (de) Plasmareaktor zur behandlung von grossflächigen substraten
WO2003049169A1 (en) Plasma etching method and plasma etching device
CN1659680A (zh) 用于处理衬底的等离子体方法和装置
EP1632995A3 (de) Sauerstofffreies Plasma-Entschichtungsverfahren
KR960019567A (ko) 표면처리장치 및 표면처리장치
WO2003007326A3 (en) Method and apparatus for micro-jet enabled, low energy ion generation and transport in plasma processing
WO2002033729A3 (en) Plasma reactor with reduced reaction chamber
EP2233606A3 (de) Plasmaentladungsvorrichtung
JPH03241830A (ja) プラズマエッチングの方法
KR940006428A (ko) 플라즈마 발생방법 및 발생장치
EP0887836A3 (de) Gerät zur Herstellung elektronischer Vorrichtungen
EP1111970A3 (de) Schaltungsplatte für Hochspannungseinsatz
KR100272123B1 (ko) 텅스텐 화학기상증착 반응실에서의 식각 방법
EP2017878A3 (de) Ätzverfahren unter Verwendung einer hochwertigerer Resistmaske in einer Plasma-Hochfrequenzätzkammer mit Kapazitiver Kopplung
CN107731711A (zh) 一种等离子减薄装置与方法
WO2004050943A3 (de) Verfahren zur plasmabehandlung von oberflächen in vakumm und anlage hierfür
EP1215709A3 (de) Vakuumbehandlungsverfahren
KR930021037A (ko) 플라즈마 발생방법 및 그 장치
TW202123781A (zh) 等離子體處理設備以及等離子體處理方法
CN207282468U (zh) 一种等离子减薄装置
JP2001284333A5 (de)
DE50209826D1 (de) Vorrichtung zur plasmagestützten bearbeitung von oberflächen planarer substrate
TW200503590A (en) Method and apparatus for plasma doping