TW200503590A - Method and apparatus for plasma doping - Google Patents
Method and apparatus for plasma dopingInfo
- Publication number
- TW200503590A TW200503590A TW092125348A TW92125348A TW200503590A TW 200503590 A TW200503590 A TW 200503590A TW 092125348 A TW092125348 A TW 092125348A TW 92125348 A TW92125348 A TW 92125348A TW 200503590 A TW200503590 A TW 200503590A
- Authority
- TW
- Taiwan
- Prior art keywords
- impurity
- plasma
- chamber
- electric power
- high frequency
- Prior art date
Links
Landscapes
- Plasma Technology (AREA)
- Physical Vapour Deposition (AREA)
Abstract
According to a method for impurity implantation, a substrate is positioned on a table provided within a chamber in which a vacuum will be introduced and also an implantation impurity is supplied. A first high frequency electric power is applied to a plasma generating element to thereby cause a plasma so that the impurity in the chamber is implanted in the substrate. Also, a second high frequency electric power is applied to the table. Detected are a condition of the plasma in the chamber and a voltage or current in the table. Controller controls at least one of the first and second high frequency electric power according to the detected condition of the plasma and/or the detected voltage or current, thereby controlling an implantation concentration of the impurity to be implanted.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002202484A JP2004047696A (en) | 2002-07-11 | 2002-07-11 | Method and apparatus for plasma doping, and matching circuit |
US10/611,867 US20040036038A1 (en) | 2002-07-11 | 2003-07-03 | Method and apparatus for plasma doping |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200503590A true TW200503590A (en) | 2005-01-16 |
TWI312645B TWI312645B (en) | 2009-07-21 |
Family
ID=34590533
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW092125348A TWI312645B (en) | 2002-07-11 | 2003-09-15 | Method and apparatus for plasma doping |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN1320605C (en) |
TW (1) | TWI312645B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI655700B (en) * | 2014-03-14 | 2019-04-01 | 美商應用材料股份有限公司 | Smart chamber and smart chamber components |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101177867B1 (en) * | 2005-05-12 | 2012-08-28 | 파나소닉 주식회사 | Plasma doping method and plasma doping apparatus |
CN102290341B (en) * | 2007-09-27 | 2013-07-10 | 汉辰科技股份有限公司 | Ion implantation method |
CN102324383B (en) * | 2007-09-27 | 2013-10-16 | 汉辰科技股份有限公司 | Ion implantation method and method for adjusting ion beam scanning rate |
US8383496B2 (en) * | 2008-08-15 | 2013-02-26 | Kazuhiko Tonari | Plasma doping method and manufacturing method of semiconductor device |
CN103715073B (en) * | 2013-12-23 | 2016-03-09 | 京东方科技集团股份有限公司 | Improve the method for ion implantation |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2718926B2 (en) * | 1987-05-29 | 1998-02-25 | 松下電器産業株式会社 | Plasma doping method |
JP2799090B2 (en) * | 1991-09-09 | 1998-09-17 | シャープ株式会社 | Ion implanter |
US5572038A (en) * | 1993-05-07 | 1996-11-05 | Varian Associates, Inc. | Charge monitor for high potential pulse current dose measurement apparatus and method |
US5654043A (en) * | 1996-10-10 | 1997-08-05 | Eaton Corporation | Pulsed plate plasma implantation system and method |
EP0942453A3 (en) * | 1998-03-11 | 2001-02-07 | Axcelis Technologies, Inc. | Monitoring of plasma constituents using optical emission spectroscopy |
US6300643B1 (en) * | 1998-08-03 | 2001-10-09 | Varian Semiconductor Equipment Associates, Inc. | Dose monitor for plasma doping system |
EP1212692B1 (en) * | 1999-07-20 | 2015-09-09 | Tokyo Electron Limited | System for controlling a plasma generator |
EP1204986A1 (en) * | 1999-08-06 | 2002-05-15 | Axcelis Technologies, Inc. | System and method for providing implant dose uniformity across the surface of a substrate |
WO2002023586A2 (en) * | 2000-09-13 | 2002-03-21 | Infineon Technologies North America Corp. | Apparatus for etching noble metals using ion implantation and method of use |
-
2003
- 2003-09-15 TW TW092125348A patent/TWI312645B/en not_active IP Right Cessation
- 2003-09-24 CN CNB031597513A patent/CN1320605C/en not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI655700B (en) * | 2014-03-14 | 2019-04-01 | 美商應用材料股份有限公司 | Smart chamber and smart chamber components |
US10930479B2 (en) | 2014-03-14 | 2021-02-23 | Applied Materials, Inc. | Smart chamber and smart chamber components |
TWI756516B (en) * | 2014-03-14 | 2022-03-01 | 美商應用材料股份有限公司 | Smart chamber and smart chamber components |
Also Published As
Publication number | Publication date |
---|---|
TWI312645B (en) | 2009-07-21 |
CN1320605C (en) | 2007-06-06 |
CN1577746A (en) | 2005-02-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |