TW200503590A - Method and apparatus for plasma doping - Google Patents

Method and apparatus for plasma doping

Info

Publication number
TW200503590A
TW200503590A TW092125348A TW92125348A TW200503590A TW 200503590 A TW200503590 A TW 200503590A TW 092125348 A TW092125348 A TW 092125348A TW 92125348 A TW92125348 A TW 92125348A TW 200503590 A TW200503590 A TW 200503590A
Authority
TW
Taiwan
Prior art keywords
impurity
plasma
chamber
electric power
high frequency
Prior art date
Application number
TW092125348A
Other languages
Chinese (zh)
Other versions
TWI312645B (en
Inventor
Tomohiro Okumura
Ichiro Nakayama
Bunji Mizuno
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2002202484A external-priority patent/JP2004047696A/en
Application filed by Matsushita Electric Ind Co Ltd filed Critical Matsushita Electric Ind Co Ltd
Publication of TW200503590A publication Critical patent/TW200503590A/en
Application granted granted Critical
Publication of TWI312645B publication Critical patent/TWI312645B/en

Links

Landscapes

  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

According to a method for impurity implantation, a substrate is positioned on a table provided within a chamber in which a vacuum will be introduced and also an implantation impurity is supplied. A first high frequency electric power is applied to a plasma generating element to thereby cause a plasma so that the impurity in the chamber is implanted in the substrate. Also, a second high frequency electric power is applied to the table. Detected are a condition of the plasma in the chamber and a voltage or current in the table. Controller controls at least one of the first and second high frequency electric power according to the detected condition of the plasma and/or the detected voltage or current, thereby controlling an implantation concentration of the impurity to be implanted.
TW092125348A 2002-07-11 2003-09-15 Method and apparatus for plasma doping TWI312645B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002202484A JP2004047696A (en) 2002-07-11 2002-07-11 Method and apparatus for plasma doping, and matching circuit
US10/611,867 US20040036038A1 (en) 2002-07-11 2003-07-03 Method and apparatus for plasma doping

Publications (2)

Publication Number Publication Date
TW200503590A true TW200503590A (en) 2005-01-16
TWI312645B TWI312645B (en) 2009-07-21

Family

ID=34590533

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092125348A TWI312645B (en) 2002-07-11 2003-09-15 Method and apparatus for plasma doping

Country Status (2)

Country Link
CN (1) CN1320605C (en)
TW (1) TWI312645B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI655700B (en) * 2014-03-14 2019-04-01 美商應用材料股份有限公司 Smart chamber and smart chamber components

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101177867B1 (en) * 2005-05-12 2012-08-28 파나소닉 주식회사 Plasma doping method and plasma doping apparatus
CN102290341B (en) * 2007-09-27 2013-07-10 汉辰科技股份有限公司 Ion implantation method
CN102324383B (en) * 2007-09-27 2013-10-16 汉辰科技股份有限公司 Ion implantation method and method for adjusting ion beam scanning rate
US8383496B2 (en) * 2008-08-15 2013-02-26 Kazuhiko Tonari Plasma doping method and manufacturing method of semiconductor device
CN103715073B (en) * 2013-12-23 2016-03-09 京东方科技集团股份有限公司 Improve the method for ion implantation

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2718926B2 (en) * 1987-05-29 1998-02-25 松下電器産業株式会社 Plasma doping method
JP2799090B2 (en) * 1991-09-09 1998-09-17 シャープ株式会社 Ion implanter
US5572038A (en) * 1993-05-07 1996-11-05 Varian Associates, Inc. Charge monitor for high potential pulse current dose measurement apparatus and method
US5654043A (en) * 1996-10-10 1997-08-05 Eaton Corporation Pulsed plate plasma implantation system and method
EP0942453A3 (en) * 1998-03-11 2001-02-07 Axcelis Technologies, Inc. Monitoring of plasma constituents using optical emission spectroscopy
US6300643B1 (en) * 1998-08-03 2001-10-09 Varian Semiconductor Equipment Associates, Inc. Dose monitor for plasma doping system
EP1212692B1 (en) * 1999-07-20 2015-09-09 Tokyo Electron Limited System for controlling a plasma generator
EP1204986A1 (en) * 1999-08-06 2002-05-15 Axcelis Technologies, Inc. System and method for providing implant dose uniformity across the surface of a substrate
WO2002023586A2 (en) * 2000-09-13 2002-03-21 Infineon Technologies North America Corp. Apparatus for etching noble metals using ion implantation and method of use

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI655700B (en) * 2014-03-14 2019-04-01 美商應用材料股份有限公司 Smart chamber and smart chamber components
US10930479B2 (en) 2014-03-14 2021-02-23 Applied Materials, Inc. Smart chamber and smart chamber components
TWI756516B (en) * 2014-03-14 2022-03-01 美商應用材料股份有限公司 Smart chamber and smart chamber components

Also Published As

Publication number Publication date
TWI312645B (en) 2009-07-21
CN1320605C (en) 2007-06-06
CN1577746A (en) 2005-02-09

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees