DE60139900D1 - Integrierte schaltung mit überspannungschutz und deren herstellungsverfahren - Google Patents

Integrierte schaltung mit überspannungschutz und deren herstellungsverfahren

Info

Publication number
DE60139900D1
DE60139900D1 DE60139900T DE60139900T DE60139900D1 DE 60139900 D1 DE60139900 D1 DE 60139900D1 DE 60139900 T DE60139900 T DE 60139900T DE 60139900 T DE60139900 T DE 60139900T DE 60139900 D1 DE60139900 D1 DE 60139900D1
Authority
DE
Germany
Prior art keywords
substrate
point
terminal
well
overvoltage protection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60139900T
Other languages
English (en)
Inventor
Lieverloo Henricus A Van
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
NXP BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP BV filed Critical NXP BV
Application granted granted Critical
Publication of DE60139900D1 publication Critical patent/DE60139900D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
DE60139900T 2000-10-16 2001-10-04 Integrierte schaltung mit überspannungschutz und deren herstellungsverfahren Expired - Lifetime DE60139900D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP00203585 2000-10-16
PCT/EP2001/011609 WO2002033753A2 (en) 2000-10-16 2001-10-04 Integrated circuit provided with overvoltage protection and method for manufacture thereof

Publications (1)

Publication Number Publication Date
DE60139900D1 true DE60139900D1 (de) 2009-10-22

Family

ID=8172142

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60139900T Expired - Lifetime DE60139900D1 (de) 2000-10-16 2001-10-04 Integrierte schaltung mit überspannungschutz und deren herstellungsverfahren

Country Status (8)

Country Link
US (2) US6531744B2 (de)
EP (1) EP1352429B1 (de)
JP (1) JP2004512685A (de)
KR (1) KR20020062754A (de)
AT (1) ATE442668T1 (de)
DE (1) DE60139900D1 (de)
TW (1) TW530405B (de)
WO (1) WO2002033753A2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60315846T2 (de) * 2002-10-04 2008-05-21 Tyco Healthcare Group Lp, Norwalk Zusammenbau von chirurgischem klammerwerkzeug
TWI302031B (en) 2003-07-16 2008-10-11 Realtek Semiconductor Corp Cascaded diode structure with deep n-well and method for making the same
JP4495512B2 (ja) * 2004-05-11 2010-07-07 パナソニック株式会社 固体撮像装置
US7279773B2 (en) * 2005-03-15 2007-10-09 Delphi Technologies, Inc. Protection device for handling energy transients
US20070263332A1 (en) * 2006-05-11 2007-11-15 Silicon Laboratories, Inc. System and method for high voltage protection of powered devices
US7773354B2 (en) * 2006-12-22 2010-08-10 Silicon Laboratories, Inc. Voltage protection circuit for power supply device and method therefor
US7764316B2 (en) * 2007-03-15 2010-07-27 Fairchild Imaging, Inc. CCD array with integrated high voltage protection circuit
US8890164B1 (en) * 2012-03-09 2014-11-18 Xilinx, Inc. Apparatus and method for reducing plasma-induced damage in pMOSFETS
JP6838504B2 (ja) * 2017-06-16 2021-03-03 富士電機株式会社 半導体装置および半導体回路装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6164152A (ja) * 1984-09-06 1986-04-02 Fujitsu Ltd Ｃ−ｍｏｓ回路
JPS6232662A (ja) * 1985-08-02 1987-02-12 Nippon Denso Co Ltd 半導体装置
JPS6337646A (ja) * 1986-07-31 1988-02-18 Fujitsu Ltd Ｃ−ｍｏｓ出力回路
JPH0766957B2 (ja) * 1986-12-12 1995-07-19 三菱電機株式会社 半導体集積回路装置の静電破壊防止装置
US4990976A (en) * 1987-11-24 1991-02-05 Nec Corporation Semiconductor device including a field effect transistor having a protective diode between source and drain thereof
JPH042171A (ja) * 1990-04-19 1992-01-07 Sanyo Electric Co Ltd 半導体集積回路
JPH05243585A (ja) * 1992-02-27 1993-09-21 Fujitsu Ltd 半導体装置
US5182220A (en) * 1992-04-02 1993-01-26 United Microelectronics Corporation CMOS on-chip ESD protection circuit and semiconductor structure
JPH062720U (ja) * 1992-06-15 1994-01-14 クラリオン株式会社 ツエナーダイオード
US5594611A (en) * 1994-01-12 1997-01-14 Lsi Logic Corporation Integrated circuit input/output ESD protection circuit with gate voltage regulation and parasitic zener and junction diode
US5455436A (en) * 1994-05-19 1995-10-03 Industrial Technology Research Institute Protection circuit against electrostatic discharge using SCR structure
KR100200352B1 (ko) * 1995-12-30 1999-06-15 윤종용 반도체 장치의 보호 소자
TW299495B (en) * 1996-05-03 1997-03-01 Winbond Electronics Corp Electrostatic discharge protection circuit
JP4501178B2 (ja) * 1999-07-26 2010-07-14 株式会社デンソー 半導体装置のための保護装置

Also Published As

Publication number Publication date
WO2002033753A2 (en) 2002-04-25
JP2004512685A (ja) 2004-04-22
US6531744B2 (en) 2003-03-11
EP1352429B1 (de) 2009-09-09
US20030213996A1 (en) 2003-11-20
KR20020062754A (ko) 2002-07-29
US20020043688A1 (en) 2002-04-18
TW530405B (en) 2003-05-01
WO2002033753A3 (en) 2003-08-14
EP1352429A2 (de) 2003-10-15
ATE442668T1 (de) 2009-09-15

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