DE60307994D1 - Aktiverpixelsensormatrix und dessen herstellungsverfahren - Google Patents

Aktiverpixelsensormatrix und dessen herstellungsverfahren

Info

Publication number
DE60307994D1
DE60307994D1 DE60307994T DE60307994T DE60307994D1 DE 60307994 D1 DE60307994 D1 DE 60307994D1 DE 60307994 T DE60307994 T DE 60307994T DE 60307994 T DE60307994 T DE 60307994T DE 60307994 D1 DE60307994 D1 DE 60307994D1
Authority
DE
Germany
Prior art keywords
wafer
sensor input
electrically conductive
manufacturing
conductive via
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60307994T
Other languages
English (en)
Other versions
DE60307994T2 (de
Inventor
Einar Nygard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Interon AS
Original Assignee
Interon AS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from IL148463A external-priority patent/IL148463A/en
Priority claimed from IL15086702A external-priority patent/IL150867A0/xx
Application filed by Interon AS filed Critical Interon AS
Application granted granted Critical
Publication of DE60307994D1 publication Critical patent/DE60307994D1/de
Publication of DE60307994T2 publication Critical patent/DE60307994T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14632—Wafer-level processed structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14634—Assemblies, i.e. Hybrid structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE60307994T 2002-03-03 2003-02-18 Aktiverpixelsensormatrix und dessen herstellungsverfahren Expired - Lifetime DE60307994T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
IL148463A IL148463A (en) 2002-03-03 2002-03-03 Pixel sensor array and method of manufacture thereof
IL14846302 2002-03-03
IL15086702 2002-07-23
IL15086702A IL150867A0 (en) 2002-07-23 2002-07-23 Pixel sensor array and method of manufacture thereof
PCT/IL2003/000125 WO2003083944A1 (en) 2002-03-03 2003-02-18 Pixel sensor array and method of manufacture thereof

Publications (2)

Publication Number Publication Date
DE60307994D1 true DE60307994D1 (de) 2006-10-12
DE60307994T2 DE60307994T2 (de) 2007-05-10

Family

ID=28676547

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60307994T Expired - Lifetime DE60307994T2 (de) 2002-03-03 2003-02-18 Aktiverpixelsensormatrix und dessen herstellungsverfahren

Country Status (7)

Country Link
US (1) US7132637B2 (de)
EP (1) EP1483790B1 (de)
JP (1) JP2005520346A (de)
AT (1) ATE338345T1 (de)
AU (1) AU2003209622A1 (de)
DE (1) DE60307994T2 (de)
WO (1) WO2003083944A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004179345A (ja) * 2002-11-26 2004-06-24 Fujitsu Ltd 半導体用基板シート材及びその製造方法、及び基板シート材を用いたモールド方法及び半導体装置の製造方法
IL158345A0 (en) * 2003-10-09 2004-05-12 Interon As Pixel detector and method of manufacture and assembly thereof
GB2449853B (en) 2007-06-04 2012-02-08 Detection Technology Oy Photodetector for imaging system
EP2461347A1 (de) 2010-12-06 2012-06-06 Fei Company Detektorsystem für Transmissionselektronenmikroskop
DE102011101835A1 (de) * 2011-05-16 2012-11-22 Arnold & Richter Cine Technik Gmbh & Co. Betriebs Kg Bildsensor
IN2014CN03499A (de) 2011-11-08 2015-10-09 Koninkl Philips Nv
US9357972B2 (en) 2012-07-17 2016-06-07 Cyber Medical Imaging, Inc. Intraoral radiographic sensors with cables having increased user comfort and methods of using the same
DE102013206404B3 (de) * 2013-04-11 2014-03-06 Siemens Aktiengesellschaft Sensorchip, computertomographischer Detektor diesen aufweisend, sowie ein Herstellungsverfahren und ein Betriebsverfahren dafür
DE102013206407B3 (de) * 2013-04-11 2014-03-06 Siemens Aktiengesellschaft Sensorchip, computertomographischer Detektor diesen aufweisend und Herstellungsverfahren dafür
US11335721B2 (en) * 2013-11-06 2022-05-17 Taiwan Semiconductor Manufacturing Co., Ltd. Backside illuminated image sensor device with shielding layer
EP3609397A4 (de) 2017-04-14 2021-01-20 Paradromics, Inc. Neuronale niedrigleistungsaufzeichnungsschaltung und verfahren zum trainieren davon

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4020080A (en) * 1974-07-01 1977-04-26 Eastman Kodak Company Oxadiazolylphenyl aromatic ester compounds and their use as ultraviolet stabilizer in organic compositions
US4104674A (en) 1977-02-07 1978-08-01 Honeywell Inc. Double sided hybrid mosaic focal plane
US4547792A (en) 1980-06-19 1985-10-15 Rockwell International Corporation Selective access array integrated circuit
JPS61128564A (ja) 1984-11-28 1986-06-16 Fujitsu Ltd 半導体装置
DE3633181C2 (de) * 1986-09-30 1998-12-10 Siemens Ag Reflexlichtschranke
JPH085566Y2 (ja) * 1989-07-12 1996-02-14 オリンパス光学工業株式会社 固体撮像装置
EP0415541B1 (de) 1989-07-29 1994-10-05 Shimadzu Corporation Halbleiterstrahlungsbilddetektor und sein Herstellungsverfahren
JP3077034B2 (ja) * 1990-07-25 2000-08-14 セイコーインスツルメンツ株式会社 半導体イメージセンサ装置
JPH05110048A (ja) 1991-10-14 1993-04-30 Mitsubishi Electric Corp 光−電子集積回路
US5734201A (en) * 1993-11-09 1998-03-31 Motorola, Inc. Low profile semiconductor device with like-sized chip and mounting substrate
EP1258740A2 (de) * 1994-12-23 2002-11-20 Digirad Corporation Halbleiter-Gammastrahlungskamera und medizinisches Bilderzeugungssystem
JPH08316450A (ja) * 1995-05-17 1996-11-29 Hitachi Ltd 積層型固体撮像素子及びその製造方法
US5998292A (en) 1997-11-12 1999-12-07 International Business Machines Corporation Method for making three dimensional circuit integration
JP3545247B2 (ja) * 1998-04-27 2004-07-21 シャープ株式会社 二次元画像検出器
US6586812B1 (en) 1999-04-13 2003-07-01 Agilent Technologies, Inc. Isolation of alpha silicon diode sensors through ion implantation
US6510195B1 (en) * 2001-07-18 2003-01-21 Koninklijke Philips Electronics, N.V. Solid state x-radiation detector modules and mosaics thereof, and an imaging method and apparatus employing the same
US6852566B2 (en) * 2003-03-12 2005-02-08 Taiwan Semiconductor Manufacturing Co., Ltd Self-aligned rear electrode for diode array element

Also Published As

Publication number Publication date
DE60307994T2 (de) 2007-05-10
WO2003083944A1 (en) 2003-10-09
ATE338345T1 (de) 2006-09-15
AU2003209622A1 (en) 2003-10-13
US7132637B2 (en) 2006-11-07
EP1483790A1 (de) 2004-12-08
EP1483790B1 (de) 2006-08-30
JP2005520346A (ja) 2005-07-07
US20050121598A1 (en) 2005-06-09

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Legal Events

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