FR2810450B1 - Element a semiconducteur de puissance comportant des diodes de detection de temperature et des diodes d'absorption d'electricite statique et dispositif a semiconducteur comportant cet element - Google Patents

Element a semiconducteur de puissance comportant des diodes de detection de temperature et des diodes d'absorption d'electricite statique et dispositif a semiconducteur comportant cet element

Info

Publication number
FR2810450B1
FR2810450B1 FR0100226A FR0100226A FR2810450B1 FR 2810450 B1 FR2810450 B1 FR 2810450B1 FR 0100226 A FR0100226 A FR 0100226A FR 0100226 A FR0100226 A FR 0100226A FR 2810450 B1 FR2810450 B1 FR 2810450B1
Authority
FR
France
Prior art keywords
diodes
semiconductor element
static electricity
diode
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0100226A
Other languages
English (en)
Other versions
FR2810450A1 (fr
Inventor
Mitsunori Kubo
Takeshi Ohmaru
Takaaki Shirasawa
Gourab Majumdar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2810450A1 publication Critical patent/FR2810450A1/fr
Application granted granted Critical
Publication of FR2810450B1 publication Critical patent/FR2810450B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H01L29/7804—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
    • G01K7/015—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions using microstructures, e.g. made of silicon
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
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    • H01L2224/05553—Shape in top view being rectangular
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H—ELECTRICITY
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    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
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    • H01L2924/3011—Impedance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S323/00—Electricity: power supply or regulation systems
    • Y10S323/907—Temperature compensation of semiconductor

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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Conversion In General (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Inverter Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR0100226A 2000-06-19 2001-01-09 Element a semiconducteur de puissance comportant des diodes de detection de temperature et des diodes d'absorption d'electricite statique et dispositif a semiconducteur comportant cet element Expired - Fee Related FR2810450B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000182928A JP2002009284A (ja) 2000-06-19 2000-06-19 電力用半導体素子及び電力用半導体装置

Publications (2)

Publication Number Publication Date
FR2810450A1 FR2810450A1 (fr) 2001-12-21
FR2810450B1 true FR2810450B1 (fr) 2005-07-01

Family

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Application Number Title Priority Date Filing Date
FR0100226A Expired - Fee Related FR2810450B1 (fr) 2000-06-19 2001-01-09 Element a semiconducteur de puissance comportant des diodes de detection de temperature et des diodes d'absorption d'electricite statique et dispositif a semiconducteur comportant cet element

Country Status (4)

Country Link
US (1) US6291826B1 (fr)
JP (1) JP2002009284A (fr)
DE (1) DE10103337B4 (fr)
FR (1) FR2810450B1 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6930371B2 (en) * 2003-02-03 2005-08-16 International Rectifier Corporation Temperature-sensing diode
JP4765252B2 (ja) * 2004-01-13 2011-09-07 株式会社豊田自動織機 温度検出機能付き半導体装置
JP4765858B2 (ja) * 2006-09-15 2011-09-07 三菱電機株式会社 温度検出装置
JP4998070B2 (ja) * 2007-04-26 2012-08-15 セイコーエプソン株式会社 ブラシレスモータ
US8362540B2 (en) * 2010-09-22 2013-01-29 Infineon Technologies Ag Integrated circuit package with reduced parasitic loop inductance
EP2541220B1 (fr) * 2011-06-28 2015-04-08 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Dispositif de mesure d'une température d'un semi-conducteur de puissance
WO2014091545A1 (fr) * 2012-12-10 2014-06-19 三菱電機株式会社 Dispositif à semi-conducteur et son procédé de fabrication
MX346018B (es) * 2013-08-28 2017-03-02 Nissan Motor Aparato de determinación de anormalidad de detector.
JP2015076562A (ja) * 2013-10-11 2015-04-20 三菱電機株式会社 パワーモジュール
CN110285890B (zh) * 2019-06-29 2020-12-15 南京亚克电子有限公司 一种在复杂电磁环境下的温度传感系统
JP2023006250A (ja) * 2021-06-30 2023-01-18 富士電機株式会社 集積回路、及びパワーモジュール

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Publication number Priority date Publication date Assignee Title
US3648153A (en) * 1970-11-04 1972-03-07 Rca Corp Reference voltage source
JP3008900B2 (ja) * 1985-11-29 2000-02-14 株式会社デンソー 半導体装置
GB2212677B (en) * 1987-11-16 1992-07-22 Sanyo Electric Co An electric circuit for supplying controlled frequency electric power to a load
EP0858164A3 (fr) * 1991-07-24 1998-08-26 Motorola, Inc. Circuit de protection pour dispositif semi-conducteur
JP2630242B2 (ja) * 1993-12-28 1997-07-16 日本電気株式会社 温度検出用ダイオード付パワーｍｏｓｆｅｔ
GB9513420D0 (en) * 1995-06-30 1995-09-06 Philips Electronics Uk Ltd Power semiconductor devices
AU9463298A (en) * 1998-10-19 2000-05-08 Mitsubishi Denki Kabushiki Kaisha Infrared sensor and infrared sensor array comprising the same

Also Published As

Publication number Publication date
FR2810450A1 (fr) 2001-12-21
JP2002009284A (ja) 2002-01-11
DE10103337B4 (de) 2008-07-31
DE10103337A1 (de) 2002-01-03
US6291826B1 (en) 2001-09-18

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