DE69923475D1 - Detektionsschaltung - Google Patents

Detektionsschaltung

Info

Publication number
DE69923475D1
DE69923475D1 DE69923475T DE69923475T DE69923475D1 DE 69923475 D1 DE69923475 D1 DE 69923475D1 DE 69923475 T DE69923475 T DE 69923475T DE 69923475 T DE69923475 T DE 69923475T DE 69923475 D1 DE69923475 D1 DE 69923475D1
Authority
DE
Germany
Prior art keywords
detection circuit
photodiode
disclosed
amplifier
ground
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69923475T
Other languages
English (en)
Other versions
DE69923475T2 (de
Inventor
John Thompson
Raymond Filippi
Joakim Baengs
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefonaktiebolaget LM Ericsson AB
Original Assignee
Telefonaktiebolaget LM Ericsson AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefonaktiebolaget LM Ericsson AB filed Critical Telefonaktiebolaget LM Ericsson AB
Publication of DE69923475D1 publication Critical patent/DE69923475D1/de
Application granted granted Critical
Publication of DE69923475T2 publication Critical patent/DE69923475T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J2001/4446—Type of detector
    • G01J2001/446—Photodiode
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J2001/4446—Type of detector
    • G01J2001/4473—Phototransistor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Air Bags (AREA)
  • Electrophonic Musical Instruments (AREA)
  • Lock And Its Accessories (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
DE69923475T 1998-11-18 1999-11-17 Detektionsschaltung Expired - Lifetime DE69923475T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB9825304A GB2343943B (en) 1998-11-18 1998-11-18 Detection circuit
GB9825304 1998-11-18
PCT/EP1999/008820 WO2000029821A1 (en) 1998-11-18 1999-11-17 Detection circuit

Publications (2)

Publication Number Publication Date
DE69923475D1 true DE69923475D1 (de) 2005-03-03
DE69923475T2 DE69923475T2 (de) 2005-07-07

Family

ID=10842668

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69923475T Expired - Lifetime DE69923475T2 (de) 1998-11-18 1999-11-17 Detektionsschaltung

Country Status (12)

Country Link
US (1) US6307196B1 (de)
EP (1) EP1137916B1 (de)
JP (1) JP4472874B2 (de)
KR (1) KR100701741B1 (de)
CN (1) CN1229633C (de)
AT (1) ATE288074T1 (de)
AU (1) AU1553800A (de)
CA (1) CA2351518C (de)
DE (1) DE69923475T2 (de)
GB (1) GB2343943B (de)
TW (1) TW437157B (de)
WO (1) WO2000029821A1 (de)

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JP2000216733A (ja) * 1997-11-28 2000-08-04 Kokusai Electric Co Ltd 光電気変換方法及び受光回路及び光通信システム
JP3668926B2 (ja) * 1999-08-27 2005-07-06 株式会社ルネサステクノロジ 光インタコネクション受信モジュール
US6433638B1 (en) * 2000-09-06 2002-08-13 International Business Machines Corporation Fully balanced transimpedance amplifier for high speed and low voltage applications
US6525305B2 (en) * 2000-09-11 2003-02-25 Perkinelmer Canada, Inc. Large current watchdog circuit for a photodetector
US6756578B1 (en) * 2002-01-17 2004-06-29 Trimble Navigation Limited Photocell bias circuit
KR100444911B1 (ko) * 2002-01-29 2004-08-21 한국과학기술원 광수신기용 차동 트랜스임피던스 증폭기
JP3813516B2 (ja) * 2002-02-27 2006-08-23 株式会社東芝 光検出回路
TWI222755B (en) * 2004-02-06 2004-10-21 Ind Tech Res Inst Optical receiving device
US7385170B1 (en) * 2004-08-24 2008-06-10 Semiconductor Components Industries, Llc Ambient light suppression circuit for photodiode receiver applications
US7361882B2 (en) * 2005-04-14 2008-04-22 Sensors Unlimited, Inc. Method and apparatus for providing non-linear, passive quenching of avalanche currents in Geiger-mode avalanche photodiodes
JP2006303668A (ja) * 2005-04-18 2006-11-02 Matsushita Electric Ind Co Ltd 出力インピーダンス可変回路
DE102005044679A1 (de) * 2005-09-19 2007-03-22 Vishay Semiconductor Gmbh Schaltungsanordnung zur Versorgung einer Photodiode mit einer Vorspannung
JP5320841B2 (ja) * 2008-06-17 2013-10-23 住友電気工業株式会社 増幅器および光モジュール
KR101183986B1 (ko) 2008-12-19 2012-09-19 한국전자통신연구원 고입력 임피던스를 갖는 리드아웃 회로
US8357889B2 (en) * 2010-01-21 2013-01-22 Intersil Americas Inc. Circuits, systems and methods for vertical and horizontal light beam alignment
JP5186546B2 (ja) * 2010-11-12 2013-04-17 アンリツ株式会社 光電変換回路
US20130092843A1 (en) * 2011-10-18 2013-04-18 Marcos de Azambuja Turqueti Miniature Radiation Detector Module Configured as Smart Mobile Device/Phone Ad-On
WO2013162552A1 (en) * 2012-04-25 2013-10-31 Hewlett-Packard Development Company, L.P. Open-gain trans-impedance amplifier with programmable input impedance
WO2014027991A1 (en) * 2012-08-13 2014-02-20 Hewlett-Packard Development Company, L.P. Trans-impedance amplifiers (tia) thermally isolated from optical modules
CN103178748A (zh) * 2013-02-05 2013-06-26 天津大学 一种光电转换电路
JP6142003B2 (ja) * 2014-01-08 2017-06-07 旭化成エレクトロニクス株式会社 ダイオード型センサの出力電流検出ｉｃチップ及びダイオード型センサ装置
EP2896940B1 (de) * 2014-01-20 2019-04-24 Molecular Devices, LLC Differentielle Photodioden-Integratorschaltung für Absorbanzmessungen
KR101667305B1 (ko) * 2014-07-30 2016-10-19 전자부품연구원 버스트 모드에서 고속으로 외란 광을 제거할 수 있는 tia
CN104535179B (zh) * 2015-01-06 2016-09-28 山西大学 一种光电探测器
US9754981B2 (en) * 2015-06-05 2017-09-05 General Electric Company Solid state photomultiplier having an intermediate region coupled between high and low voltage regions and associated detector
US10209374B2 (en) * 2015-07-13 2019-02-19 Sharp Kabushiki Kaisha Radiation detector
US9882638B2 (en) * 2015-07-28 2018-01-30 Avago Technologies General Ip (Singapore) Pte. Ltd. Optical receiver signal strength indicator (RSSI) circuit having a variable supply voltage filter impedance
US10171043B2 (en) * 2015-10-05 2019-01-01 Telefonaktiebolaget Lm Ericsson (Publ) Amplification device incorporating limiting
US10145736B2 (en) * 2016-04-19 2018-12-04 Texas Instruments Incorporated Bias currents to reverse-bias photodiode in light detection system
CN106130491B (zh) * 2016-06-28 2023-05-23 杭州思泰微电子有限公司 一种实现tia自动匹配输出阻抗的电路
CN107765075B (zh) * 2016-08-16 2021-08-24 中兴通讯股份有限公司 一种电流信号处理装置
CN109285846B (zh) * 2017-07-20 2023-10-13 松下知识产权经营株式会社 光传感器及使用它的光检测装置
EP3666180B1 (de) 2018-12-14 2021-07-14 Stichting IMEC Nederland Vorrichtung zum auslesen eines photoplethysmografiesignals und wearable-sensor
KR102219713B1 (ko) * 2019-04-19 2021-02-24 한화시스템 주식회사 레이저 탐색기
CN112449126B (zh) 2019-09-05 2023-02-10 昇佳电子股份有限公司 光感测器电路
JP7467298B2 (ja) * 2020-09-16 2024-04-15 株式会社東芝 保護回路
CN113008748A (zh) * 2021-03-10 2021-06-22 深圳市汇投智控科技有限公司 一种红外检测电路
CN113949449B (zh) * 2021-09-24 2023-11-17 昂纳科技(深圳)集团股份有限公司 光电二极管检测电路、光模块及其监控系统、监控方法

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DE3218439A1 (de) 1982-05-15 1983-12-01 kabelmetal electro GmbH, 3000 Hannover Schaltungsanordnung fuer einen opto/elektrischen wandler
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NL8602408A (nl) * 1986-09-24 1988-04-18 Philips Nv Voorversterker voor een optische ontvanger.
JP2564133B2 (ja) * 1987-04-17 1996-12-18 オリンパス光学工業株式会社 固体撮像装置
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US5130667A (en) 1991-04-11 1992-07-14 Bell Communications Research Inc. Differential transimpedance amplifier
US5442321A (en) 1993-07-08 1995-08-15 Anadigics, Inc. Automatic transimpedance control amplifier
EP0643496A1 (de) 1993-09-10 1995-03-15 Siemens Aktiengesellschaft Optischer Empfänger mit grosssignalfestem Transimpedanzverstärker
JP3335455B2 (ja) 1994-01-19 2002-10-15 富士通株式会社 電流電圧変換回路
US5532471A (en) 1994-12-21 1996-07-02 At&T Corp. Optical transimpedance amplifier with high dynamic range
US5565672A (en) 1994-12-30 1996-10-15 Lucent Technologies Inc. Optical transimpedance receiver with compensation network
US5696657A (en) 1995-06-02 1997-12-09 Hughes Electronics Temperature compensated APD detector bias and transimpedance amplifier circuitry for laser range finders
US5592124A (en) 1995-06-26 1997-01-07 Burr-Brown Corporation Integrated photodiode/transimpedance amplifier
US5679953A (en) * 1996-08-05 1997-10-21 International Business Machines Corporation Automatic threshold setting circuit

Also Published As

Publication number Publication date
AU1553800A (en) 2000-06-05
EP1137916A1 (de) 2001-10-04
KR100701741B1 (ko) 2007-03-29
JP2002530640A (ja) 2002-09-17
CA2351518A1 (en) 2000-05-25
KR20010081014A (ko) 2001-08-25
GB9825304D0 (en) 1999-01-13
ATE288074T1 (de) 2005-02-15
CA2351518C (en) 2009-05-05
WO2000029821A1 (en) 2000-05-25
CN1229633C (zh) 2005-11-30
US6307196B1 (en) 2001-10-23
GB2343943B (en) 2003-11-26
EP1137916B1 (de) 2005-01-26
TW437157B (en) 2001-05-28
JP4472874B2 (ja) 2010-06-02
GB2343943A (en) 2000-05-24
DE69923475T2 (de) 2005-07-07
CN1326545A (zh) 2001-12-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition