DE60139532D1 - Strahlungsquelle, Lithographieapparat, Geräteherstellungsmethode und damit hergestelltes Gerät - Google Patents

Strahlungsquelle, Lithographieapparat, Geräteherstellungsmethode und damit hergestelltes Gerät

Info

Publication number
DE60139532D1
DE60139532D1 DE60139532T DE60139532T DE60139532D1 DE 60139532 D1 DE60139532 D1 DE 60139532D1 DE 60139532 T DE60139532 T DE 60139532T DE 60139532 T DE60139532 T DE 60139532T DE 60139532 D1 DE60139532 D1 DE 60139532D1
Authority
DE
Germany
Prior art keywords
radiation source
lithography apparatus
manufactured therewith
device manufacturing
device manufactured
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60139532T
Other languages
English (en)
Inventor
Konstantin Nikolaevitch Koshelev
Frederik Bijkerk
Givi Georgievitch Zukavishvili
Evgenii Dmitreevitch Korop
Vladimir Vital Evitch Ivanov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV
Application granted granted Critical
Publication of DE60139532D1 publication Critical patent/DE60139532D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
    • H05G2/005—X-ray radiation generated from plasma being produced from a liquid or gas containing a metal as principal radiation generating component

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Plasma Technology (AREA)
DE60139532T 2000-07-03 2001-06-29 Strahlungsquelle, Lithographieapparat, Geräteherstellungsmethode und damit hergestelltes Gerät Expired - Lifetime DE60139532D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP00202304 2000-07-03

Publications (1)

Publication Number Publication Date
DE60139532D1 true DE60139532D1 (de) 2009-09-24

Family

ID=8171728

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60139532T Expired - Lifetime DE60139532D1 (de) 2000-07-03 2001-06-29 Strahlungsquelle, Lithographieapparat, Geräteherstellungsmethode und damit hergestelltes Gerät

Country Status (6)

Country Link
US (3) US6667484B2 (de)
EP (1) EP1170982B1 (de)
JP (1) JP4073647B2 (de)
KR (1) KR100566755B1 (de)
DE (1) DE60139532D1 (de)
TW (1) TW518913B (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW518913B (en) * 2000-07-03 2003-01-21 Asml Netherlands Bv Radiation source, lithographic apparatus, and semiconductor device manufacturing method
DE10139677A1 (de) * 2001-04-06 2002-10-17 Fraunhofer Ges Forschung Verfahren und Vorrichtung zum Erzeugen von extrem ultravioletter Strahlung und weicher Röntgenstrahlung
DE10219805B4 (de) * 2002-04-30 2013-03-14 Xtreme Technologies Gmbh Verfahren zur Stabilisierung der Strahlungsleistung einer gepuist betriebenen, auf gasentladungserzeugtem Plasma basierenden Strahlungsquelle
FR2841684B1 (fr) * 2002-06-28 2004-09-24 Centre Nat Rech Scient Source de rayonnement, notamment ultraviolet a decharges
SG129259A1 (en) * 2002-10-03 2007-02-26 Asml Netherlands Bv Radiation source lithographic apparatus, and device manufacturing method
DE10251435B3 (de) * 2002-10-30 2004-05-27 Xtreme Technologies Gmbh Strahlungsquelle zur Erzeugung von extrem ultravioletter Strahlung
US6770895B2 (en) * 2002-11-21 2004-08-03 Asml Holding N.V. Method and apparatus for isolating light source gas from main chamber gas in a lithography tool
TWI286674B (en) 2002-12-27 2007-09-11 Asml Netherlands Bv Container for a mask, method of transferring lithographic masks therein and method of scanning a mask in a container
DE10359464A1 (de) * 2003-12-17 2005-07-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Erzeugen von insbesondere EUV-Strahlung und/oder weicher Röntgenstrahlung
US7567379B2 (en) * 2004-04-29 2009-07-28 Intel Corporation Technique to prevent tin contamination of mirrors and electrodes in an EUV lithography system
US7208746B2 (en) * 2004-07-14 2007-04-24 Asml Netherlands B.V. Radiation generating device, lithographic apparatus, device manufacturing method and device manufactured thereby
US20080203325A1 (en) * 2005-06-14 2008-08-28 Koninklijke Philips Electronics, N.V. Method of Protecting a Radiation Source Producing Euv-Radiation and/or Soft X-Rays Against Short Circuits
WO2007002170A2 (en) * 2005-06-21 2007-01-04 Starfire Industries Llc Microdischarge light source configuration and illumination system
JP4710463B2 (ja) 2005-07-21 2011-06-29 ウシオ電機株式会社 極端紫外光発生装置
KR100764793B1 (ko) * 2006-04-24 2007-10-11 엘지전자 주식회사 스팀플라즈마 발생모듈
US7838853B2 (en) * 2006-12-14 2010-11-23 Asml Netherlands B.V. Plasma radiation source, method of forming plasma radiation, apparatus for projecting a pattern from a patterning device onto a substrate and device manufacturing method
US7872244B2 (en) * 2007-08-08 2011-01-18 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE102010055889B4 (de) * 2010-12-21 2014-04-30 Ushio Denki Kabushiki Kaisha Verfahren und Vorrichtung zur Erzeugung kurzwelliger Strahlung mittels einer gasentladungsbasierten Hochfrequenzhochstromentladung
US9267515B2 (en) 2012-04-04 2016-02-23 General Fusion Inc. Jet control devices and methods
US11939477B2 (en) 2014-01-30 2024-03-26 Monolith Materials, Inc. High temperature heat integration method of making carbon black
US10370539B2 (en) 2014-01-30 2019-08-06 Monolith Materials, Inc. System for high temperature chemical processing
CN104216236B (zh) * 2014-08-22 2016-08-17 深圳市大川光电设备有限公司 适合影像转移曝光机的菲林与工件密着方法
CN111601447A (zh) 2015-07-29 2020-08-28 巨石材料公司 Dc等离子体焰炬电力设计方法和设备
US9806501B1 (en) * 2016-08-17 2017-10-31 General Electric Company Spark gap with triple-point electron emission prompting
CN110603297A (zh) * 2017-03-08 2019-12-20 巨石材料公司 用热传递气体制备碳颗粒的系统和方法
JP2020517562A (ja) 2017-04-20 2020-06-18 モノリス マテリアルズ インコーポレイテッド 粒子システムと方法
KR102529565B1 (ko) * 2018-02-01 2023-05-04 삼성전자주식회사 극자외선 생성 장치
CN111146967B (zh) * 2019-12-25 2023-08-15 兰州空间技术物理研究所 一种高可靠沿面击穿放电触发式脉冲引弧电源

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4494043A (en) 1981-07-02 1985-01-15 Physics International Company Imploding plasma device
US4578805A (en) * 1984-10-10 1986-03-25 Maxwell Laboratories, Inc. Transmission line transmitting energy to load in vacuum chamber
US4589123A (en) * 1985-02-27 1986-05-13 Maxwell Laboratories, Inc. System for generating soft X rays
US4644576A (en) * 1985-04-26 1987-02-17 At&T Technologies, Inc. Method and apparatus for producing x-ray pulses
JPS62176038A (ja) * 1986-01-28 1987-08-01 Hitachi Ltd Ｘ線発光装置
JP2572787B2 (ja) 1987-11-18 1997-01-16 株式会社日立製作所 Ｘ線発生装置
JPH01296596A (ja) 1988-05-25 1989-11-29 Hitachi Ltd プラズマｘ線発生装置
US5315629A (en) 1990-10-10 1994-05-24 At&T Bell Laboratories Ringfield lithography
US6031241A (en) * 1997-03-11 2000-02-29 University Of Central Florida Capillary discharge extreme ultraviolet lamp source for EUV microlithography and other related applications
US6815700B2 (en) 1997-05-12 2004-11-09 Cymer, Inc. Plasma focus light source with improved pulse power system
US6075838A (en) * 1998-03-18 2000-06-13 Plex Llc Z-pinch soft x-ray source using diluent gas
TW518913B (en) * 2000-07-03 2003-01-21 Asml Netherlands Bv Radiation source, lithographic apparatus, and semiconductor device manufacturing method
RU2206186C2 (ru) * 2000-07-04 2003-06-10 Государственный научный центр Российской Федерации Троицкий институт инновационных и термоядерных исследований Способ получения коротковолнового излучения из газоразрядной плазмы и устройство для его реализации

Also Published As

Publication number Publication date
US20020021430A1 (en) 2002-02-21
TW518913B (en) 2003-01-21
JP2002124397A (ja) 2002-04-26
EP1170982B1 (de) 2009-08-12
KR20020003292A (ko) 2002-01-12
US20040089819A1 (en) 2004-05-13
US6818912B2 (en) 2004-11-16
USRE41362E1 (en) 2010-06-01
KR100566755B1 (ko) 2006-03-31
US6667484B2 (en) 2003-12-23
JP4073647B2 (ja) 2008-04-09
EP1170982A1 (de) 2002-01-09

Similar Documents

Publication Publication Date Title
DE60139532D1 (de) Strahlungsquelle, Lithographieapparat, Geräteherstellungsmethode und damit hergestelltes Gerät
DE60223630D1 (de) Lithographisches Gerät und zugehöriges Herstellungsverfahren
NL1021816A1 (nl) Belichtingswerkwijze en belichtingsinrichting.
DE60108444D1 (de) Fixiervorrichtung und damit versehenes Bilderzeugungsgerät sowie Fixierverfahren
TWI372463B (en) Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device
DE10339915A8 (de) Entwicklungsverfahren, Substratbehandlungsverfahren und Substratsbehandlungseinrichtung
DE60134699D1 (de) Elektronen emittierende Vorrichtung, Elektronenquelle und Bilderzeugungsgerät
DE60233706D1 (de) Laserbestrahlungsverfahren und Laserbestrahlungsvorrichtung und Herstellungsverfahren für eine Halbleitervorrichtung
SG113028A1 (en) Optical attenuator device, radiation system and lithographic apparatus therewith and device manufacturing method
SG121762A1 (en) Lithographic apparatus, and device manufacturing method
HK1140550A1 (en) Exposure method and apparatus, and device manufacturing method
HK1093119A1 (en) Exposure apparatus, exposure method, and device manufacturing method
SG10201607457PA (en) Exposure apparatus, exposure method and device manufacturing method
DE60038323D1 (de) Halbleiterkristall, dessen Herstellungsverfahren und Halbleiterbauelement
SG107660A1 (en) Lithographic apparatus, device manufacturing method, and device manufactured thereby
SG108878A1 (en) Laser irradiation method and laser irradiation apparatus, and method for fabricating semiconductor device
DE60118104D1 (de) Feldemissionsvorrichtung und Herstellungsverfahren dafür
DE60230840D1 (de) Halbleiteranordnung und Herstellungsverfahren dafür
DE60308582D1 (de) Fixiervorrichtung und damit versehenes Bilderzeugungsgerät
SG123587A1 (en) Lithographic apparatus, device manufacturing method, and device manufactured thereby
BR0011210B1 (pt) mÉtodo e aparelho para esterilizaÇço com ozânio.
SG110038A1 (en) Lithographic apparatus, device manufacturing method, and device manufactured thereby
DE60237143D1 (de) Empfangseinrichtung, empfangsverfahren und namenauflösungsverfahren
DE60205582D1 (de) Funkempfangsvorrichtung und richtungsempfangsverfahren
DE602004016662D1 (de) Belichtungsverfahren und vorrichtung, belichtungsmaske und herstellungsverfahren

Legal Events

Date Code Title Description
8364 No opposition during term of opposition