DE60128975T2 - Mikrolithographischer Projektionsapparat - Google Patents
Mikrolithographischer Projektionsapparat Download PDFInfo
- Publication number
- DE60128975T2 DE60128975T2 DE60128975T DE60128975T DE60128975T2 DE 60128975 T2 DE60128975 T2 DE 60128975T2 DE 60128975 T DE60128975 T DE 60128975T DE 60128975 T DE60128975 T DE 60128975T DE 60128975 T2 DE60128975 T2 DE 60128975T2
- Authority
- DE
- Germany
- Prior art keywords
- projection
- projection system
- optical axis
- radiation
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000003287 optical effect Effects 0.000 claims description 44
- 230000005855 radiation Effects 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 29
- 238000005286 illumination Methods 0.000 claims description 19
- 238000000059 patterning Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000003384 imaging method Methods 0.000 claims description 6
- 241000219739 Lens Species 0.000 description 38
- 235000012431 wafers Nutrition 0.000 description 14
- 238000000034 method Methods 0.000 description 9
- 239000010410 layer Substances 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- ZINJLDJMHCUBIP-UHFFFAOYSA-N ethametsulfuron-methyl Chemical compound CCOC1=NC(NC)=NC(NC(=O)NS(=O)(=O)C=2C(=CC=CC=2)C(=O)OC)=N1 ZINJLDJMHCUBIP-UHFFFAOYSA-N 0.000 description 4
- 230000010363 phase shift Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 240000004322 Lens culinaris Species 0.000 description 1
- 101001094044 Mus musculus Solute carrier family 26 member 6 Proteins 0.000 description 1
- 235000010678 Paulownia tomentosa Nutrition 0.000 description 1
- 244000153888 Tung Species 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000037452 priming Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Microscoopes, Condenser (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP00300418 | 2000-01-20 | ||
| EP00300418 | 2000-01-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60128975D1 DE60128975D1 (de) | 2007-08-02 |
| DE60128975T2 true DE60128975T2 (de) | 2008-02-28 |
Family
ID=8172657
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60128975T Expired - Fee Related DE60128975T2 (de) | 2000-01-20 | 2001-01-18 | Mikrolithographischer Projektionsapparat |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6522387B2 (ja) |
| JP (1) | JP2001237183A (ja) |
| KR (1) | KR100585461B1 (ja) |
| DE (1) | DE60128975T2 (ja) |
| TW (1) | TWI283798B (ja) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5729331A (en) * | 1993-06-30 | 1998-03-17 | Nikon Corporation | Exposure apparatus, optical projection apparatus and a method for adjusting the optical projection apparatus |
| US6833904B1 (en) | 1998-02-27 | 2004-12-21 | Nikon Corporation | Exposure apparatus and method of fabricating a micro-device using the exposure apparatus |
| JP4238390B2 (ja) * | 1998-02-27 | 2009-03-18 | 株式会社ニコン | 照明装置、該照明装置を備えた露光装置および該露光装置を用いて半導体デバイスを製造する方法 |
| US6717651B2 (en) | 2000-04-12 | 2004-04-06 | Nikon Corporation | Exposure apparatus, method for manufacturing thereof and method for manufacturing microdevice |
| JP2003007598A (ja) * | 2001-06-25 | 2003-01-10 | Mitsubishi Electric Corp | フォーカスモニタ方法およびフォーカスモニタ用装置ならびに半導体装置の製造方法 |
| JP2004335639A (ja) * | 2003-05-06 | 2004-11-25 | Fuji Photo Film Co Ltd | 投影露光装置 |
| JP2004342711A (ja) * | 2003-05-14 | 2004-12-02 | Nikon Corp | 照明光学装置、露光装置、および露光方法 |
| US7119883B2 (en) * | 2004-10-13 | 2006-10-10 | Asml Holding N.V. | Correcting variations in the intensity of light within an illumination field without distorting the telecentricity of the light |
| US7508489B2 (en) * | 2004-12-13 | 2009-03-24 | Carl Zeiss Smt Ag | Method of manufacturing a miniaturized device |
| US7342644B2 (en) * | 2004-12-29 | 2008-03-11 | Asml Netherlands B.V. | Methods and systems for lithographic beam generation |
| US20080192224A1 (en) * | 2005-02-12 | 2008-08-14 | Carl Zeiss Smt Ag | Microlithographic Projection Exposure Apparatus |
| US7324185B2 (en) * | 2005-03-04 | 2008-01-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US8248577B2 (en) | 2005-05-03 | 2012-08-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP2511765B1 (de) | 2007-02-06 | 2019-04-03 | Carl Zeiss SMT GmbH | Regelvorrichtung zur Regelung einer flächigen Anordnung individuell ansteuerbarer Strahlablenkungselemente in einer mikrolithographischen Projektionsbelichtungsanlage |
| DE102007045396A1 (de) * | 2007-09-21 | 2009-04-23 | Carl Zeiss Smt Ag | Bündelführender optischer Kollektor zur Erfassung der Emission einer Strahlungsquelle |
| US20090097001A1 (en) * | 2007-10-15 | 2009-04-16 | Qimonda Ag | Non-Telecentric Lithography Apparatus and Method of Manufacturing Integrated Circuits |
| JP2008172272A (ja) * | 2008-03-21 | 2008-07-24 | Carl Zeiss Smt Ag | マイクロリソグラフィ投影露光装置 |
| KR101624758B1 (ko) | 2008-06-30 | 2016-05-26 | 코닝 인코포레이티드 | 마이크로리소그래픽 투사 시스템용 텔레센트릭성 교정기 |
| JP6980443B2 (ja) * | 2017-07-28 | 2021-12-15 | キヤノン株式会社 | 露光装置及び物品製造方法 |
| US10365211B2 (en) | 2017-09-26 | 2019-07-30 | Kla-Tencor Corporation | Systems and methods for metrology beam stabilization |
| EP4274729A4 (en) * | 2021-01-08 | 2024-12-11 | National Research Council of Canada | METHOD FOR CORRECTING RAY DISTORTIONS IN 3D TOMOGRAPHIC PRINTING |
| DE102021120952B3 (de) * | 2021-08-11 | 2022-11-10 | Carl Zeiss Smt Gmbh | Verfahren zur Korrektur eines Telezentriefehlers einer Abbildungsvorrichtung und Maskeninspektionsmikroskop |
| EP4650875A1 (en) | 2024-05-13 | 2025-11-19 | ASML Netherlands B.V. | Illumination uniformity correction apparatus with a transmissive correction plate with a varying parameter profile |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05323232A (ja) * | 1992-05-25 | 1993-12-07 | Asahi Optical Co Ltd | 偏倍可能な投影装置 |
| JPH05343292A (ja) * | 1992-06-08 | 1993-12-24 | Nikon Corp | 露光装置 |
| JPH0697047A (ja) * | 1992-09-11 | 1994-04-08 | Nikon Corp | 照明光学系 |
| JPH06342748A (ja) * | 1993-06-02 | 1994-12-13 | Nikon Corp | 位置検出装置 |
| JP3359123B2 (ja) * | 1993-09-20 | 2002-12-24 | キヤノン株式会社 | 収差補正光学系 |
| JPH07106230A (ja) * | 1993-10-07 | 1995-04-21 | Nikon Corp | プロキシミティ露光装置 |
| JPH07283911A (ja) * | 1994-04-05 | 1995-10-27 | Canon Inc | 画像読取装置 |
| JP3279090B2 (ja) * | 1994-09-09 | 2002-04-30 | 株式会社ニコン | 照明装置および露光装置 |
| KR960042227A (ko) * | 1995-05-19 | 1996-12-21 | 오노 시게오 | 투영노광장치 |
| JP3743576B2 (ja) * | 1995-07-11 | 2006-02-08 | 株式会社ニコン | 投影露光装置、及びそれを用いた半導体素子又は液晶表示素子の製造方法 |
| JPH09311277A (ja) * | 1996-05-20 | 1997-12-02 | Nikon Corp | 反射屈折光学系 |
| JP2691341B2 (ja) * | 1996-05-27 | 1997-12-17 | 株式会社ニコン | 投影露光装置 |
| JP3728613B2 (ja) * | 1996-12-06 | 2005-12-21 | 株式会社ニコン | 走査型露光装置の調整方法及び該方法を使用する走査型露光装置 |
| US6333777B1 (en) * | 1997-07-18 | 2001-12-25 | Canon Kabushiki Kaisha | Exposure apparatus and device manufacturing method |
| DE19809395A1 (de) * | 1998-03-05 | 1999-09-09 | Zeiss Carl Fa | Beleuchtungssystem und REMA-Objektiv mit Linsenverschiebung und Betriebsverfahren dafür |
| JPH11352404A (ja) * | 1998-06-08 | 1999-12-24 | Nikon Corp | 投影露光装置及びデバイス製造方法並びに反射屈折光学系 |
-
2000
- 2000-12-27 TW TW089127977A patent/TWI283798B/zh not_active IP Right Cessation
-
2001
- 2001-01-18 KR KR1020010002935A patent/KR100585461B1/ko not_active Expired - Fee Related
- 2001-01-18 US US09/761,837 patent/US6522387B2/en not_active Expired - Fee Related
- 2001-01-18 JP JP2001010551A patent/JP2001237183A/ja active Pending
- 2001-01-18 DE DE60128975T patent/DE60128975T2/de not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US6522387B2 (en) | 2003-02-18 |
| KR20010076350A (ko) | 2001-08-11 |
| JP2001237183A (ja) | 2001-08-31 |
| KR100585461B1 (ko) | 2006-06-02 |
| DE60128975D1 (de) | 2007-08-02 |
| US20010012101A1 (en) | 2001-08-09 |
| TWI283798B (en) | 2007-07-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |