DE60127206T2 - Wässrige Dispersion zum chemisch-mechanischen Polieren von Kupfersubstraten - Google Patents

Wässrige Dispersion zum chemisch-mechanischen Polieren von Kupfersubstraten Download PDF

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Publication number
DE60127206T2
DE60127206T2 DE60127206T DE60127206T DE60127206T2 DE 60127206 T2 DE60127206 T2 DE 60127206T2 DE 60127206 T DE60127206 T DE 60127206T DE 60127206 T DE60127206 T DE 60127206T DE 60127206 T2 DE60127206 T2 DE 60127206T2
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DE
Germany
Prior art keywords
polishing
aqueous dispersion
copper
mechanical polishing
particle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60127206T
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German (de)
English (en)
Other versions
DE60127206D1 (de
Inventor
Hiroyuki yokohama-shi Yano
Gaku Yokohama-shi Minamihaba
Masayuki Motonari
Masayuki Hattori
Nobuo Kawahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
JSR Corp
Original Assignee
Toshiba Corp
JSR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, JSR Corp filed Critical Toshiba Corp
Publication of DE60127206D1 publication Critical patent/DE60127206D1/de
Application granted granted Critical
Publication of DE60127206T2 publication Critical patent/DE60127206T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Weting (AREA)
DE60127206T 2000-06-30 2001-06-28 Wässrige Dispersion zum chemisch-mechanischen Polieren von Kupfersubstraten Expired - Lifetime DE60127206T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000199462 2000-06-30
JP2000199462A JP3837277B2 (ja) 2000-06-30 2000-06-30 銅の研磨に用いる化学機械研磨用水系分散体及び化学機械研磨方法

Publications (2)

Publication Number Publication Date
DE60127206D1 DE60127206D1 (de) 2007-04-26
DE60127206T2 true DE60127206T2 (de) 2007-12-20

Family

ID=18697476

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60127206T Expired - Lifetime DE60127206T2 (de) 2000-06-30 2001-06-28 Wässrige Dispersion zum chemisch-mechanischen Polieren von Kupfersubstraten

Country Status (6)

Country Link
US (1) US6653267B2 (https=)
EP (1) EP1167482B1 (https=)
JP (1) JP3837277B2 (https=)
KR (1) KR100747954B1 (https=)
DE (1) DE60127206T2 (https=)
TW (1) TW538113B (https=)

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US7186653B2 (en) 2003-07-30 2007-03-06 Climax Engineered Materials, Llc Polishing slurries and methods for chemical mechanical polishing
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US20060096179A1 (en) * 2004-11-05 2006-05-11 Cabot Microelectronics Corporation CMP composition containing surface-modified abrasive particles
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CN101233601A (zh) * 2005-06-13 2008-07-30 高级技术材料公司 在金属硅化物形成后用于选择性除去金属或金属合金的组合物及方法
US20060283095A1 (en) * 2005-06-15 2006-12-21 Planar Solutions, Llc Fumed silica to colloidal silica conversion process
EP1966410B1 (en) 2005-09-26 2018-12-26 Planar Solutions LLC Ultrapure colloidal silica for use in chemical mechanical polishing applications
US20070144075A1 (en) * 2005-12-09 2007-06-28 Industrial Technology Research Institute Chemical mechanical polishing particles and slurry and method of producing the same
US20080153731A1 (en) * 2006-12-21 2008-06-26 Mark Buehler Clean chemistry composition, method of manufacturing same, and system making use of same
CN101974297A (zh) * 2010-11-12 2011-02-16 大连三达奥克化学股份有限公司 核/壳型复合纳米磨料铜化学机械抛光液
CN102766406B (zh) * 2012-06-25 2014-12-10 深圳市力合材料有限公司 一种去除半导体硅片表面缺陷的抛光组合物及其制备方法
CN111356747A (zh) * 2017-11-22 2020-06-30 巴斯夫欧洲公司 化学机械抛光组合物
KR102698381B1 (ko) * 2018-11-23 2024-08-23 솔브레인 주식회사 연마용 조성물 및 이를 이용하는 연마 방법

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Also Published As

Publication number Publication date
DE60127206D1 (de) 2007-04-26
KR100747954B1 (ko) 2007-08-08
JP2002012854A (ja) 2002-01-15
EP1167482A2 (en) 2002-01-02
TW538113B (en) 2003-06-21
JP3837277B2 (ja) 2006-10-25
KR20020002285A (ko) 2002-01-09
EP1167482A3 (en) 2003-09-03
US6653267B2 (en) 2003-11-25
US20020016275A1 (en) 2002-02-07
EP1167482B1 (en) 2007-03-14

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