DE60119483D1 - Nichtflüchtiger elektrisch veränderbarer Halbleiterspeicher - Google Patents

Nichtflüchtiger elektrisch veränderbarer Halbleiterspeicher

Info

Publication number
DE60119483D1
DE60119483D1 DE60119483T DE60119483T DE60119483D1 DE 60119483 D1 DE60119483 D1 DE 60119483D1 DE 60119483 T DE60119483 T DE 60119483T DE 60119483 T DE60119483 T DE 60119483T DE 60119483 D1 DE60119483 D1 DE 60119483D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
electrically variable
variable semiconductor
volatile electrically
volatile
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60119483T
Other languages
English (en)
Inventor
Federico Pio
Enrico Gomiero
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE60119483D1 publication Critical patent/DE60119483D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18—Bit line organisation; Bit line lay-out
DE60119483T 2001-01-24 2001-01-24 Nichtflüchtiger elektrisch veränderbarer Halbleiterspeicher Expired - Lifetime DE60119483D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP01830039A EP1227499B1 (de) 2001-01-24 2001-01-24 Nichtflüchtiger elektrisch veränderbarer Halbleiterspeicher

Publications (1)

Publication Number Publication Date
DE60119483D1 true DE60119483D1 (de) 2006-06-14

Family

ID=8184369

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60119483T Expired - Lifetime DE60119483D1 (de) 2001-01-24 2001-01-24 Nichtflüchtiger elektrisch veränderbarer Halbleiterspeicher

Country Status (3)

Country Link
US (1) US6618315B2 (de)
EP (1) EP1227499B1 (de)
DE (1) DE60119483D1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1227499B1 (de) * 2001-01-24 2006-05-10 STMicroelectronics S.r.l. Nichtflüchtiger elektrisch veränderbarer Halbleiterspeicher
US6891747B2 (en) 2002-02-20 2005-05-10 Stmicroelectronics S.R.L. Phase change memory cell and manufacturing method thereof using minitrenches
EP1569242A1 (de) * 2004-02-27 2005-08-31 STMicroelectronics S.r.l. Elektrisch wort-löschbare nicht-flüchtige Speicheranordnung und dazugehöriges Vorspannungsverfahren

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2635810B2 (ja) * 1990-09-28 1997-07-30 株式会社東芝 半導体記憶装置
JPH08111096A (ja) 1994-10-12 1996-04-30 Nec Corp 半導体記憶装置及びその消去方法
TW378330B (en) * 1997-06-03 2000-01-01 Fujitsu Ltd Semiconductor memory device
US6401167B1 (en) * 1997-10-10 2002-06-04 Rambus Incorporated High performance cost optimized memory
EP1130517B1 (de) * 2000-03-02 2004-05-26 STMicroelectronics S.r.l. Redundanzarchitektur bei einem verschachtelten Speicher
US6304504B1 (en) * 2000-08-30 2001-10-16 Micron Technology, Inc. Methods and systems for alternate bitline stress testing
EP1227499B1 (de) * 2001-01-24 2006-05-10 STMicroelectronics S.r.l. Nichtflüchtiger elektrisch veränderbarer Halbleiterspeicher

Also Published As

Publication number Publication date
US20020154546A1 (en) 2002-10-24
EP1227499B1 (de) 2006-05-10
EP1227499A1 (de) 2002-07-31
US6618315B2 (en) 2003-09-09

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Legal Events

Date Code Title Description
8332 No legal effect for de