DE60113491D1 - Nassbehanlungsvorrichtung - Google Patents

Nassbehanlungsvorrichtung

Info

Publication number
DE60113491D1
DE60113491D1 DE60113491T DE60113491T DE60113491D1 DE 60113491 D1 DE60113491 D1 DE 60113491D1 DE 60113491 T DE60113491 T DE 60113491T DE 60113491 T DE60113491 T DE 60113491T DE 60113491 D1 DE60113491 D1 DE 60113491D1
Authority
DE
Germany
Prior art keywords
nassbehanlungsvorrichtung
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60113491T
Other languages
English (en)
Other versions
DE60113491T2 (de
Inventor
Kenichi Mitsumori
Tadahiro Ohmi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alps Alpine Co Ltd
Original Assignee
Alps Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alps Electric Co Ltd filed Critical Alps Electric Co Ltd
Publication of DE60113491D1 publication Critical patent/DE60113491D1/de
Application granted granted Critical
Publication of DE60113491T2 publication Critical patent/DE60113491T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/041—Cleaning travelling work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • B08B3/123—Cleaning travelling work, e.g. webs, articles on a conveyor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
DE60113491T 2000-08-30 2001-07-09 Nassbehanlungsvorrichtung Expired - Fee Related DE60113491T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000261949A JP2002075947A (ja) 2000-08-30 2000-08-30 ウェット処理装置
JP2000261949 2000-08-30

Publications (2)

Publication Number Publication Date
DE60113491D1 true DE60113491D1 (de) 2006-02-02
DE60113491T2 DE60113491T2 (de) 2006-06-29

Family

ID=18749705

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60113491T Expired - Fee Related DE60113491T2 (de) 2000-08-30 2001-07-09 Nassbehanlungsvorrichtung

Country Status (7)

Country Link
US (1) US6629540B2 (de)
EP (1) EP1184091B1 (de)
JP (1) JP2002075947A (de)
KR (1) KR100445041B1 (de)
CN (1) CN1162895C (de)
DE (1) DE60113491T2 (de)
TW (1) TW506009B (de)

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US7234477B2 (en) * 2000-06-30 2007-06-26 Lam Research Corporation Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces
US7584761B1 (en) * 2000-06-30 2009-09-08 Lam Research Corporation Wafer edge surface treatment with liquid meniscus
KR20030083779A (ko) * 2002-04-22 2003-11-01 주식회사 디엠에스 액정표시소자용 처리장치 및 처리방법
US7383843B2 (en) * 2002-09-30 2008-06-10 Lam Research Corporation Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer
US7069937B2 (en) * 2002-09-30 2006-07-04 Lam Research Corporation Vertical proximity processor
US7252097B2 (en) * 2002-09-30 2007-08-07 Lam Research Corporation System and method for integrating in-situ metrology within a wafer process
US8236382B2 (en) * 2002-09-30 2012-08-07 Lam Research Corporation Proximity substrate preparation sequence, and method, apparatus, and system for implementing the same
US7367345B1 (en) 2002-09-30 2008-05-06 Lam Research Corporation Apparatus and method for providing a confined liquid for immersion lithography
US7520285B2 (en) * 2002-09-30 2009-04-21 Lam Research Corporation Apparatus and method for processing a substrate
US7614411B2 (en) * 2002-09-30 2009-11-10 Lam Research Corporation Controls of ambient environment during wafer drying using proximity head
US7513262B2 (en) * 2002-09-30 2009-04-07 Lam Research Corporation Substrate meniscus interface and methods for operation
US7293571B2 (en) * 2002-09-30 2007-11-13 Lam Research Corporation Substrate proximity processing housing and insert for generating a fluid meniscus
US7198055B2 (en) * 2002-09-30 2007-04-03 Lam Research Corporation Meniscus, vacuum, IPA vapor, drying manifold
US7389783B2 (en) * 2002-09-30 2008-06-24 Lam Research Corporation Proximity meniscus manifold
US7632376B1 (en) 2002-09-30 2009-12-15 Lam Research Corporation Method and apparatus for atomic layer deposition (ALD) in a proximity system
US7597765B2 (en) * 2002-09-30 2009-10-06 Lam Research Corporation Post etch wafer surface cleaning with liquid meniscus
US7997288B2 (en) * 2002-09-30 2011-08-16 Lam Research Corporation Single phase proximity head having a controlled meniscus for treating a substrate
TWI245739B (en) * 2002-12-05 2005-12-21 Ibm Method and device for flowing a liquid on a surface
US7675000B2 (en) * 2003-06-24 2010-03-09 Lam Research Corporation System method and apparatus for dry-in, dry-out, low defect laser dicing using proximity technology
DE112004002879A5 (de) 2004-03-22 2007-05-24 Rena Sondermaschinen Gmbh Verfahren zur Behandlung von Substratoberflächen
CN1933759B (zh) * 2004-03-31 2010-12-15 兰姆研究有限公司 利用相容化学品的基板刷子擦洗和接近清洗干燥程序、接近基板制备程序和实施前述程序的方法、设备和系统
US8062471B2 (en) * 2004-03-31 2011-11-22 Lam Research Corporation Proximity head heating method and apparatus
US20050247673A1 (en) * 2004-05-07 2005-11-10 International Business Machines Corporation Confinement of fluids on surfaces
JP2006088033A (ja) * 2004-09-24 2006-04-06 Future Vision:Kk ウェット処理装置
US8032979B2 (en) * 2005-09-17 2011-10-11 Hydramaster North America, Inc. Heat exchanger
JP4840020B2 (ja) * 2005-10-14 2011-12-21 ソニー株式会社 基板の処理方法
US7969548B2 (en) * 2006-05-22 2011-06-28 Asml Netherlands B.V. Lithographic apparatus and lithographic apparatus cleaning method
US7928366B2 (en) * 2006-10-06 2011-04-19 Lam Research Corporation Methods of and apparatus for accessing a process chamber using a dual zone gas injector with improved optical access
US8813764B2 (en) 2009-05-29 2014-08-26 Lam Research Corporation Method and apparatus for physical confinement of a liquid meniscus over a semiconductor wafer
KR100834827B1 (ko) * 2006-11-16 2008-06-04 삼성전자주식회사 포토 마스크 세정장치 및 그의 세정방법
JP4810411B2 (ja) * 2006-11-30 2011-11-09 東京応化工業株式会社 処理装置
US8146902B2 (en) * 2006-12-21 2012-04-03 Lam Research Corporation Hybrid composite wafer carrier for wet clean equipment
US8464736B1 (en) 2007-03-30 2013-06-18 Lam Research Corporation Reclaim chemistry
US7975708B2 (en) * 2007-03-30 2011-07-12 Lam Research Corporation Proximity head with angled vacuum conduit system, apparatus and method
US8141566B2 (en) * 2007-06-19 2012-03-27 Lam Research Corporation System, method and apparatus for maintaining separation of liquids in a controlled meniscus
SG188086A1 (en) * 2008-02-08 2013-03-28 Lam Res Corp Apparatus for substantially uniform fluid flow rates relative to a proximity head in processing of a wafer surface by a meniscus
CN101610641B (zh) * 2008-06-19 2011-06-29 富葵精密组件(深圳)有限公司 湿处理系统及湿处理方法
US9659796B2 (en) * 2008-07-24 2017-05-23 Taiwan Semiconductor Manufacturing Company, Ltd. Rinsing wafers using composition-tunable rinse water in chemical mechanical polish
JP2011243769A (ja) * 2010-05-19 2011-12-01 Tokyo Electron Ltd 基板のエッチング方法、プログラム及びコンピュータ記憶媒体
JP6903441B2 (ja) * 2016-03-31 2021-07-14 芝浦メカトロニクス株式会社 基板処理装置
JP7260322B2 (ja) * 2019-02-18 2023-04-18 株式会社荏原製作所 研磨装置および研磨方法
JP2022068575A (ja) * 2020-10-22 2022-05-10 株式会社ディスコ 洗浄装置
CN112474586B (zh) * 2020-11-23 2021-08-10 宁波格劳博智能工业有限公司 一种叠片数码电芯储运装置智能清洗检测生产线

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Also Published As

Publication number Publication date
KR100445041B1 (ko) 2004-08-18
US20020023671A1 (en) 2002-02-28
EP1184091B1 (de) 2005-09-21
JP2002075947A (ja) 2002-03-15
CN1340848A (zh) 2002-03-20
KR20020017982A (ko) 2002-03-07
US6629540B2 (en) 2003-10-07
DE60113491T2 (de) 2006-06-29
CN1162895C (zh) 2004-08-18
EP1184091A1 (de) 2002-03-06
TW506009B (en) 2002-10-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee