DE60112710D1 - Herstellungsverfahren für Halbleitervorrichtungen und optischer Wellenleiter - Google Patents

Herstellungsverfahren für Halbleitervorrichtungen und optischer Wellenleiter

Info

Publication number
DE60112710D1
DE60112710D1 DE60112710T DE60112710T DE60112710D1 DE 60112710 D1 DE60112710 D1 DE 60112710D1 DE 60112710 T DE60112710 T DE 60112710T DE 60112710 T DE60112710 T DE 60112710T DE 60112710 D1 DE60112710 D1 DE 60112710D1
Authority
DE
Germany
Prior art keywords
production process
semiconductor devices
optical waveguides
waveguides
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60112710T
Other languages
English (en)
Other versions
DE60112710T2 (de
Inventor
Takayuki Watanabe
Hiroaki Ito
Takuya Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Device Innovations Inc
Original Assignee
Fujitsu Quantum Devices Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Quantum Devices Ltd filed Critical Fujitsu Quantum Devices Ltd
Application granted granted Critical
Publication of DE60112710D1 publication Critical patent/DE60112710D1/de
Publication of DE60112710T2 publication Critical patent/DE60112710T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2077—Methods of obtaining the confinement using lateral bandgap control during growth, e.g. selective growth, mask induced
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H01S5/2086—Methods of obtaining the confinement using special etching techniques lateral etch control, e.g. mask induced
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3434—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer comprising at least both As and P as V-compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
    • H01S5/34373—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on InGa(Al)AsP

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Weting (AREA)
  • Optical Integrated Circuits (AREA)
DE60112710T 2000-12-25 2001-12-21 Herstellungsverfahren für Halbleitervorrichtungen und optischer Wellenleiter Expired - Lifetime DE60112710T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000393318A JP3762640B2 (ja) 2000-12-25 2000-12-25 半導体装置の製造方法および光導波路の製造方法、多層光導波路の製造方法
JP2000393318 2000-12-25

Publications (2)

Publication Number Publication Date
DE60112710D1 true DE60112710D1 (de) 2005-09-22
DE60112710T2 DE60112710T2 (de) 2006-01-19

Family

ID=18859139

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60112710T Expired - Lifetime DE60112710T2 (de) 2000-12-25 2001-12-21 Herstellungsverfahren für Halbleitervorrichtungen und optischer Wellenleiter

Country Status (5)

Country Link
US (1) US6955994B2 (de)
EP (1) EP1225620B1 (de)
JP (1) JP3762640B2 (de)
DE (1) DE60112710T2 (de)
TW (1) TW511182B (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3765987B2 (ja) * 2001-02-15 2006-04-12 ユーディナデバイス株式会社 半導体装置の製造方法
KR20020078582A (ko) * 2001-04-06 2002-10-19 테크노세미켐 주식회사 투명도전막의 선택적 에칭액 조성물
US6703639B1 (en) * 2002-12-17 2004-03-09 The United States Of America As Represented By The Secretary Of The Navy Nanofabrication for InAs/AlSb heterostructures
KR100558437B1 (ko) 2003-06-24 2006-03-10 삼성전기주식회사 반도체 레이저의 제조방법
JP3801597B2 (ja) 2004-02-09 2006-07-26 ユーディナデバイス株式会社 半導体素子の製造方法
JP4153007B2 (ja) 2004-12-02 2008-09-17 三井化学株式会社 光配線基板および光電気混載基板
JP2008227432A (ja) * 2007-03-16 2008-09-25 Furukawa Electric Co Ltd:The 窒化物化合物半導体素子およびその製造方法
JP2008294076A (ja) * 2007-05-22 2008-12-04 Sumitomo Electric Ind Ltd 半導体レーザ素子
JP5672771B2 (ja) * 2010-05-24 2015-02-18 富士通株式会社 半導体光素子及びその製造方法
CN111903020B (zh) * 2018-03-26 2022-08-09 三菱电机株式会社 半导体装置的制造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0722146B2 (ja) * 1989-02-14 1995-03-08 松下電器産業株式会社 エッチング方法
JPH0740623B2 (ja) * 1990-07-30 1995-05-01 松下電器産業株式会社 半導体レーザの製造方法
US5227015A (en) * 1990-07-30 1993-07-13 Matsushita Electric Industrial Co., Ltd. Method of fabricating semiconductor laser
JPH04307984A (ja) * 1991-04-05 1992-10-30 Nec Corp 光集積素子
JPH0521419A (ja) * 1991-07-11 1993-01-29 Nec Corp 半導体装置の製造方法
JPH0722691A (ja) * 1993-06-30 1995-01-24 Mitsubishi Electric Corp 半導体レーザとその製造方法
US5441912A (en) * 1993-07-28 1995-08-15 The Furukawa Electric Co., Ltd. Method of manufacturing a laser diode
US5568501A (en) * 1993-11-01 1996-10-22 Matsushita Electric Industrial Co., Ltd. Semiconductor laser and method for producing the same
JPH07211692A (ja) * 1994-01-12 1995-08-11 Sumitomo Electric Ind Ltd ＩｎＰ系化合物半導体の加工方法
JPH08116135A (ja) * 1994-10-17 1996-05-07 Mitsubishi Electric Corp 導波路集積素子の製造方法，及び導波路集積素子
JP3270278B2 (ja) * 1994-12-15 2002-04-02 東芝電子エンジニアリング株式会社 半導体装置及びその製造方法
JP3429407B2 (ja) * 1996-01-19 2003-07-22 シャープ株式会社 半導体レーザ装置およびその製造方法
JPH09283505A (ja) * 1996-02-13 1997-10-31 Matsushita Electric Ind Co Ltd 化合物半導体のエッチング方法、半導体レーザ素子およびその製造方法
JPH1065201A (ja) 1996-06-13 1998-03-06 Furukawa Electric Co Ltd:The 半導体導波路型受光素子とその製造方法
JP3994362B2 (ja) * 1998-09-08 2007-10-17 富士通株式会社 化合物半導体装置の製造方法
JP2000349395A (ja) * 1999-03-30 2000-12-15 Victor Co Of Japan Ltd リッジ導波路型半導体レーザ素子の製造方法

Also Published As

Publication number Publication date
EP1225620A3 (de) 2003-12-17
EP1225620B1 (de) 2005-08-17
TW511182B (en) 2002-11-21
DE60112710T2 (de) 2006-01-19
JP2002198616A (ja) 2002-07-12
JP3762640B2 (ja) 2006-04-05
US6955994B2 (en) 2005-10-18
EP1225620A2 (de) 2002-07-24
US20020119661A1 (en) 2002-08-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: EUDYNA DEVICES INC., YAMANASHI, JP

8328 Change in the person/name/address of the agent

Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE