DE60105154D1 - Hochleistungslaser mit gesampeltem gitter und verteiltem bragg-reflektor - Google Patents

Hochleistungslaser mit gesampeltem gitter und verteiltem bragg-reflektor

Info

Publication number
DE60105154D1
DE60105154D1 DE60105154T DE60105154T DE60105154D1 DE 60105154 D1 DE60105154 D1 DE 60105154D1 DE 60105154 T DE60105154 T DE 60105154T DE 60105154 T DE60105154 T DE 60105154T DE 60105154 D1 DE60105154 D1 DE 60105154D1
Authority
DE
Germany
Prior art keywords
light beam
cavity
bragg reflector
distributed bragg
performance laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60105154T
Other languages
English (en)
Other versions
DE60105154T2 (de
Inventor
A Coldren
A Fish
C Larson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Viavi Solutions Inc
Original Assignee
Agility Communications Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/614,895 external-priority patent/US6349106B1/en
Priority claimed from US09/614,378 external-priority patent/US6628690B1/en
Priority claimed from US09/614,376 external-priority patent/US6614819B1/en
Priority claimed from US09/614,674 external-priority patent/US6624000B1/en
Priority claimed from US09/614,195 external-priority patent/US6574259B1/en
Priority claimed from US09/614,375 external-priority patent/US6658035B1/en
Priority claimed from US09/614,377 external-priority patent/US6580739B1/en
Priority claimed from US09/614,224 external-priority patent/US6654400B1/en
Application filed by Agility Communications Inc filed Critical Agility Communications Inc
Application granted granted Critical
Publication of DE60105154D1 publication Critical patent/DE60105154D1/de
Publication of DE60105154T2 publication Critical patent/DE60105154T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1209—Sampled grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
    • H01S5/1243—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts by other means than a jump in the grating period, e.g. bent waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3413—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers
    • H01S5/3414—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers by vacancy induced interdiffusion

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Biophysics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Optical Integrated Circuits (AREA)
  • Optical Fibers, Optical Fiber Cores, And Optical Fiber Bundles (AREA)
  • Lasers (AREA)
DE60105154T 2000-06-02 2001-06-01 Hochleistungslaser mit gesampeltem gitter und verteiltem bragg-reflektor Expired - Lifetime DE60105154T2 (de)

Applications Claiming Priority (21)

Application Number Priority Date Filing Date Title
US20906800P 2000-06-02 2000-06-02
US209068P 2000-06-02
US614224 2000-07-12
US09/614,195 US6574259B1 (en) 1999-09-02 2000-07-12 Method of making an opto-electronic laser with integrated modulator
US09/614,375 US6658035B1 (en) 1999-09-02 2000-07-12 Tunable laser source with integrated optical amplifier
US614665 2000-07-12
US09/614,378 US6628690B1 (en) 1999-09-02 2000-07-12 Opto-electronic laser with integrated modulator
US09/614,224 US6654400B1 (en) 1999-09-02 2000-07-12 Method of making a tunable laser source with integrated optical amplifier
US614378 2000-07-12
US614375 2000-07-12
US614895 2000-07-12
US09/614,674 US6624000B1 (en) 1999-09-02 2000-07-12 Method for making a monolithic wavelength converter assembly
US09/614,895 US6349106B1 (en) 1999-09-02 2000-07-12 Method for converting an optical wavelength using a monolithic wavelength converter assembly
US09/614,665 US6687278B1 (en) 1999-09-02 2000-07-12 Method of generating an optical signal with a tunable laser source with integrated optical amplifier
US614195 2000-07-12
US614377 2000-07-12
US614674 2000-07-12
US09/614,377 US6580739B1 (en) 1999-09-02 2000-07-12 Integrated opto-electronic wavelength converter assembly
US09/614,376 US6614819B1 (en) 1999-09-02 2000-07-12 Method of modulating an optical wavelength with an opto-electronic laser with integrated modulator
US614376 2000-07-12
PCT/US2001/017884 WO2001095444A2 (en) 2000-06-02 2001-06-01 High-power sampled grating distributed bragg reflector lasers

Publications (2)

Publication Number Publication Date
DE60105154D1 true DE60105154D1 (de) 2004-09-30
DE60105154T2 DE60105154T2 (de) 2005-09-08

Family

ID=27581149

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60105154T Expired - Lifetime DE60105154T2 (de) 2000-06-02 2001-06-01 Hochleistungslaser mit gesampeltem gitter und verteiltem bragg-reflektor

Country Status (8)

Country Link
EP (1) EP1290765B1 (de)
JP (1) JP5443660B2 (de)
CN (1) CN1227789C (de)
AT (1) ATE274760T1 (de)
AU (1) AU2001266663A1 (de)
CA (1) CA2410964C (de)
DE (1) DE60105154T2 (de)
WO (1) WO2001095444A2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6822995B2 (en) 2002-02-21 2004-11-23 Finisar Corporation GaAs/AI(Ga)As distributed bragg reflector on InP
GB0206204D0 (en) * 2002-03-15 2002-05-01 Denselight Semiconductors Pte Direct modulation of laser diode with chirp control
CN101432936B (zh) 2004-10-01 2011-02-02 菲尼萨公司 具有多顶侧接触的垂直腔面发射激光器
US7860137B2 (en) 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
CN100377453C (zh) * 2006-05-12 2008-03-26 何建军 带有电吸收光栅结构的q-调制半导体激光器
JP2008263216A (ja) * 2008-06-03 2008-10-30 Matsushita Electric Ind Co Ltd 半導体レーザおよびその製造方法
CN102044844B (zh) * 2010-11-24 2012-05-23 中国科学院半导体研究所 分布放大的取样光栅分布布拉格反射可调谐激光器
CN104412148B (zh) * 2012-05-17 2017-10-10 菲尼萨公司 用于无源光网络(pon)应用的直接调制激光器
CN105917257B (zh) * 2014-02-24 2017-08-29 洛克利光子有限公司 检测器重调器和光电子交换机

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60145687A (ja) * 1984-01-09 1985-08-01 Nec Corp 半導体レ−ザ−
JPS60145686A (ja) * 1984-01-09 1985-08-01 Nec Corp 半導体レ−ザ
JPS6414988A (en) * 1987-07-08 1989-01-19 Nec Corp Wavelength-tunable semiconductor laser
JPH0626268B2 (ja) * 1987-08-19 1994-04-06 日本電気株式会社 波長可変半導体レ−ザ
JPH0636460B2 (ja) * 1988-12-21 1994-05-11 光計測技術開発株式会社 半導体光集積回路の製造方法
JPH02211686A (ja) * 1989-02-13 1990-08-22 Mitsubishi Electric Corp 半導体レーザ
US5088097A (en) * 1990-04-04 1992-02-11 Canon Kabushiki Kaisha Semiconductor laser element capable of changing emission wavelength, and method of driving the same
JPH0439985A (ja) * 1990-06-05 1992-02-10 Fujitsu Ltd 光ビーム偏向器
JP2913922B2 (ja) * 1991-08-09 1999-06-28 日本電気株式会社 量子井戸分布帰還型半導体レーザ
JPH0555689A (ja) * 1991-08-23 1993-03-05 Nippon Telegr & Teleph Corp <Ntt> 波長制御機能付分布反射型半導体レーザ
JP2832920B2 (ja) * 1992-03-06 1998-12-09 日本電信電話株式会社 波長掃引機能付き半導体レーザ
JP3226073B2 (ja) * 1994-02-18 2001-11-05 キヤノン株式会社 偏波変調可能な半導体レーザおよびその使用法
US5841799A (en) * 1994-12-17 1998-11-24 Canon Kabushiki Kaisha Semiconductor laser, modulation method therefor and optical communication system using the same
JP2877107B2 (ja) * 1996-12-02 1999-03-31 日本電気株式会社 多重量子井戸型半導体レーザ
JPH10117046A (ja) * 1996-08-22 1998-05-06 Canon Inc 半導体レーザ及びその駆動法及びそれを用いた光送信器及びそれを用いた光通信システム
JPH10256675A (ja) * 1997-03-14 1998-09-25 Canon Inc 波長可変半導体レーザ、これの駆動方法及びこれを用いた光通信システム
EP1172905A1 (de) * 2000-07-11 2002-01-16 Interuniversitair Microelektronica Centrum Vzw Verfahren und Vorrichtung zur Kontrolle einer Laserstruktur

Also Published As

Publication number Publication date
ATE274760T1 (de) 2004-09-15
WO2001095444A2 (en) 2001-12-13
CN1432207A (zh) 2003-07-23
AU2001266663A1 (en) 2001-12-17
JP5443660B2 (ja) 2014-03-19
DE60105154T2 (de) 2005-09-08
JP2003536264A (ja) 2003-12-02
EP1290765B1 (de) 2004-08-25
CA2410964C (en) 2010-11-30
CA2410964A1 (en) 2001-12-13
CN1227789C (zh) 2005-11-16
WO2001095444A3 (en) 2002-06-20
EP1290765A2 (de) 2003-03-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: JDS UNIPHASE CORP. (N. D. GES. D. STAATES DELA, US

8328 Change in the person/name/address of the agent

Representative=s name: PATENT- UND RECHTSANWAELTE KRAUS & WEISERT, 80539