AU2001266663A1 - High-power, manufacturable sampled grating distributed bragg reflector lasers - Google Patents
High-power, manufacturable sampled grating distributed bragg reflector lasersInfo
- Publication number
- AU2001266663A1 AU2001266663A1 AU2001266663A AU6666301A AU2001266663A1 AU 2001266663 A1 AU2001266663 A1 AU 2001266663A1 AU 2001266663 A AU2001266663 A AU 2001266663A AU 6666301 A AU6666301 A AU 6666301A AU 2001266663 A1 AU2001266663 A1 AU 2001266663A1
- Authority
- AU
- Australia
- Prior art keywords
- manufacturable
- power
- bragg reflector
- distributed bragg
- light beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06256—Controlling the frequency of the radiation with DBR-structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
- H01S5/1209—Sampled grating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
- H01S5/1243—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts by other means than a jump in the grating period, e.g. bent waveguides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3413—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers
- H01S5/3414—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers by vacancy induced interdiffusion
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Semiconductor Lasers (AREA)
- Optical Elements Other Than Lenses (AREA)
- Optical Fibers, Optical Fiber Cores, And Optical Fiber Bundles (AREA)
- Optical Integrated Circuits (AREA)
- Lasers (AREA)
Abstract
A tunable laser is disclosed including a gain section for creating a light beam over a bandwidth, a phase section for controlling the light beam around a center frequency of the bandwidth, a waveguide for guiding and reflecting the light beam in a cavity including a relatively low energy bandgap separate-confinement-heterostructure (SCH), a front mirror bounding an end of the cavity and a back mirror bounding an opposite end of the cavity wherein gain is provided by at least one of the group comprising the phase section, the front mirror and the back mirror.
Applications Claiming Priority (21)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US20906800P | 2000-06-02 | 2000-06-02 | |
US60209068 | 2000-06-02 | ||
US09/614,376 US6614819B1 (en) | 1999-09-02 | 2000-07-12 | Method of modulating an optical wavelength with an opto-electronic laser with integrated modulator |
US09/614,377 US6580739B1 (en) | 1999-09-02 | 2000-07-12 | Integrated opto-electronic wavelength converter assembly |
US09/614,224 US6654400B1 (en) | 1999-09-02 | 2000-07-12 | Method of making a tunable laser source with integrated optical amplifier |
US09/614,378 US6628690B1 (en) | 1999-09-02 | 2000-07-12 | Opto-electronic laser with integrated modulator |
US09614674 | 2000-07-12 | ||
US09614224 | 2000-07-12 | ||
US09614195 | 2000-07-12 | ||
US09/614,375 US6658035B1 (en) | 1999-09-02 | 2000-07-12 | Tunable laser source with integrated optical amplifier |
US09/614,665 US6687278B1 (en) | 1999-09-02 | 2000-07-12 | Method of generating an optical signal with a tunable laser source with integrated optical amplifier |
US09614375 | 2000-07-12 | ||
US09614665 | 2000-07-12 | ||
US09614895 | 2000-07-12 | ||
US09614378 | 2000-07-12 | ||
US09614377 | 2000-07-12 | ||
US09/614,895 US6349106B1 (en) | 1999-09-02 | 2000-07-12 | Method for converting an optical wavelength using a monolithic wavelength converter assembly |
US09614376 | 2000-07-12 | ||
US09/614,674 US6624000B1 (en) | 1999-09-02 | 2000-07-12 | Method for making a monolithic wavelength converter assembly |
US09/614,195 US6574259B1 (en) | 1999-09-02 | 2000-07-12 | Method of making an opto-electronic laser with integrated modulator |
PCT/US2001/017884 WO2001095444A2 (en) | 2000-06-02 | 2001-06-01 | High-power sampled grating distributed bragg reflector lasers |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001266663A1 true AU2001266663A1 (en) | 2001-12-17 |
Family
ID=27581149
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001266663A Abandoned AU2001266663A1 (en) | 2000-06-02 | 2001-06-01 | High-power, manufacturable sampled grating distributed bragg reflector lasers |
Country Status (8)
Country | Link |
---|---|
EP (1) | EP1290765B1 (en) |
JP (1) | JP5443660B2 (en) |
CN (1) | CN1227789C (en) |
AT (1) | ATE274760T1 (en) |
AU (1) | AU2001266663A1 (en) |
CA (1) | CA2410964C (en) |
DE (1) | DE60105154T2 (en) |
WO (1) | WO2001095444A2 (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6822995B2 (en) | 2002-02-21 | 2004-11-23 | Finisar Corporation | GaAs/AI(Ga)As distributed bragg reflector on InP |
GB0206204D0 (en) * | 2002-03-15 | 2002-05-01 | Denselight Semiconductors Pte | Direct modulation of laser diode with chirp control |
CN101432936B (en) | 2004-10-01 | 2011-02-02 | 菲尼萨公司 | Vertical cavity surface emitting laser having multiple top-side contacts |
US7860137B2 (en) | 2004-10-01 | 2010-12-28 | Finisar Corporation | Vertical cavity surface emitting laser with undoped top mirror |
CN100377453C (en) * | 2006-05-12 | 2008-03-26 | 何建军 | Q-modulation semiconductor laser with electric absorption grating structure |
JP2008263216A (en) * | 2008-06-03 | 2008-10-30 | Matsushita Electric Ind Co Ltd | Semiconductor laser and method of manufacturing the same |
CN102044844B (en) * | 2010-11-24 | 2012-05-23 | 中国科学院半导体研究所 | Distributed amplification SGDBR (sampled grating distributed Bragg reflector) tunable laser structure |
CN104412148B (en) * | 2012-05-17 | 2017-10-10 | 菲尼萨公司 | The direct modulation laser applied for EPON (PON) |
WO2015124954A2 (en) * | 2014-02-24 | 2015-08-27 | Rockley Photonics Limited | Detector remodulator and optoelectronic switch |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60145687A (en) * | 1984-01-09 | 1985-08-01 | Nec Corp | Semiconductor laser |
JPS60145686A (en) * | 1984-01-09 | 1985-08-01 | Nec Corp | Semiconductor laser |
JPS6414988A (en) * | 1987-07-08 | 1989-01-19 | Nec Corp | Wavelength-tunable semiconductor laser |
JPH0626268B2 (en) * | 1987-08-19 | 1994-04-06 | 日本電気株式会社 | Tunable semiconductor laser |
JPH0636460B2 (en) * | 1988-12-21 | 1994-05-11 | 光計測技術開発株式会社 | Method for manufacturing semiconductor optical integrated circuit |
JPH02211686A (en) * | 1989-02-13 | 1990-08-22 | Mitsubishi Electric Corp | Semiconductor laser |
US5088097A (en) * | 1990-04-04 | 1992-02-11 | Canon Kabushiki Kaisha | Semiconductor laser element capable of changing emission wavelength, and method of driving the same |
JPH0439985A (en) * | 1990-06-05 | 1992-02-10 | Fujitsu Ltd | Light beam deflector |
JP2913922B2 (en) * | 1991-08-09 | 1999-06-28 | 日本電気株式会社 | Quantum well distributed feedback semiconductor laser |
JPH0555689A (en) * | 1991-08-23 | 1993-03-05 | Nippon Telegr & Teleph Corp <Ntt> | Distributed reflection type semiconductor laser provided with wavelength control function |
JP2832920B2 (en) * | 1992-03-06 | 1998-12-09 | 日本電信電話株式会社 | Semiconductor laser with wavelength sweep function |
JP3226073B2 (en) * | 1994-02-18 | 2001-11-05 | キヤノン株式会社 | Semiconductor laser capable of polarization modulation and its use |
US5841799A (en) * | 1994-12-17 | 1998-11-24 | Canon Kabushiki Kaisha | Semiconductor laser, modulation method therefor and optical communication system using the same |
JP2877107B2 (en) * | 1996-12-02 | 1999-03-31 | 日本電気株式会社 | Multiple quantum well semiconductor laser |
JPH10117046A (en) * | 1996-08-22 | 1998-05-06 | Canon Inc | Semiconductor laser and its drive method and optical transmitter using it and optical communication system using it |
JPH10256675A (en) * | 1997-03-14 | 1998-09-25 | Canon Inc | Variable wavelength semiconductor laser, its driving method, and optical communication system using the same |
EP1172905A1 (en) * | 2000-07-11 | 2002-01-16 | Interuniversitair Microelektronica Centrum Vzw | A method and apparatus for controlling a laser structure |
-
2001
- 2001-06-01 WO PCT/US2001/017884 patent/WO2001095444A2/en active IP Right Grant
- 2001-06-01 CA CA2410964A patent/CA2410964C/en not_active Expired - Fee Related
- 2001-06-01 DE DE60105154T patent/DE60105154T2/en not_active Expired - Lifetime
- 2001-06-01 AU AU2001266663A patent/AU2001266663A1/en not_active Abandoned
- 2001-06-01 AT AT01944233T patent/ATE274760T1/en not_active IP Right Cessation
- 2001-06-01 EP EP01944233A patent/EP1290765B1/en not_active Expired - Lifetime
- 2001-06-01 CN CN01810499.1A patent/CN1227789C/en not_active Expired - Lifetime
- 2001-06-01 JP JP2002502873A patent/JP5443660B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP5443660B2 (en) | 2014-03-19 |
EP1290765A2 (en) | 2003-03-12 |
CN1227789C (en) | 2005-11-16 |
DE60105154D1 (en) | 2004-09-30 |
WO2001095444A3 (en) | 2002-06-20 |
EP1290765B1 (en) | 2004-08-25 |
ATE274760T1 (en) | 2004-09-15 |
DE60105154T2 (en) | 2005-09-08 |
CA2410964C (en) | 2010-11-30 |
CN1432207A (en) | 2003-07-23 |
JP2003536264A (en) | 2003-12-02 |
CA2410964A1 (en) | 2001-12-13 |
WO2001095444A2 (en) | 2001-12-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
AU2001259503A1 (en) | Improved mirror and cavity designs for sampled-grating distributed bragg reflector lasers | |
WO2002073754A3 (en) | Narrow band high power fibre lasers | |
EP1104055A3 (en) | Laser light source apparatus and OTDR apparatus | |
JPH06291423A (en) | Mode locked semiconductor laser device | |
AU2001266663A1 (en) | High-power, manufacturable sampled grating distributed bragg reflector lasers | |
Morton et al. | Hybrid soliton pulse source with fiber Bragg reflector | |
WO2000072409A3 (en) | Wide stripe distributed bragg reflector lasers with improved angular and spectral characteristics | |
CA2329089C (en) | Fiber grating feedback stabilization of broad area laser diode | |
WO2003032453A3 (en) | Two-section distributed bragg reflector laser | |
CA1297935C (en) | Wavelength locked dye lazer with transverse pumping | |
EP0779689A3 (en) | Gain clamped optical amplifier | |
Morton et al. | Packaged hybrid soliton pulse source results 70 terabit. km/sec soliton transmission | |
AU7076998A (en) | Optical resonators with discontinuous phase elements | |
US7283573B2 (en) | Optical microwave source | |
US6771687B1 (en) | Stabilized laser source | |
WO2002071630A3 (en) | Vcsel with single lasing-reflectivity peak reflector | |
GB2118767A (en) | Coupled cavity square bore waveguide laser | |
AU2002212408A1 (en) | Wavelength tunable laser source | |
JP2000058950A (en) | Free space laser | |
KR980006673A (en) | Infrared laser systems and methods for reducing beam divergence | |
JPS60207389A (en) | Semiconductor laser device | |
WO2002003514A3 (en) | Power and wavelength control of sampled grating distributed bragg reflector lasers | |
EP0986148A2 (en) | Laser | |
Subramaniam et al. | All-optical fiber-ring lasing filtering gain-clamped erbium-doped amplifier with laser technique | |
Zhang et al. | Intelligent Cascaded Raman Fiber Laser with Programmable Spectrum |