AU2001259503A1 - Improved mirror and cavity designs for sampled-grating distributed bragg reflector lasers - Google Patents

Improved mirror and cavity designs for sampled-grating distributed bragg reflector lasers

Info

Publication number
AU2001259503A1
AU2001259503A1 AU2001259503A AU5950301A AU2001259503A1 AU 2001259503 A1 AU2001259503 A1 AU 2001259503A1 AU 2001259503 A AU2001259503 A AU 2001259503A AU 5950301 A AU5950301 A AU 5950301A AU 2001259503 A1 AU2001259503 A1 AU 2001259503A1
Authority
AU
Australia
Prior art keywords
cavity
sampled
light beam
bragg reflector
distributed bragg
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001259503A
Inventor
Larry A. Coldren
Gregory A. Fish
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agility Communications Inc
Original Assignee
Agility Communications Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agility Communications Inc filed Critical Agility Communications Inc
Publication of AU2001259503A1 publication Critical patent/AU2001259503A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1209—Sampled grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1225—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers with a varying coupling constant along the optical axis

Abstract

A tunable laser comprised of a gain section for creating a light beam by spontaneous emission over a bandwidth, a phase section for controlling the light beam around a center frequency of the bandwidth, a cavity for guiding and reflecting the light beam, a front mirror bounding an end of the cavity, and a back mirror bounding an opposite end of the cavity. The back mirror has a kappaeffB approximately equal to alphaTune,where kappaeffB is an effective coupling constant and alphaTune is the maximum amount of propagation loss anticipated for an amount of peak tuning required, and a length of the back mirror is made to produce greater than approximately 80% reflectivity.
AU2001259503A 2000-05-04 2001-05-04 Improved mirror and cavity designs for sampled-grating distributed bragg reflector lasers Abandoned AU2001259503A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US20305200P 2000-05-04 2000-05-04
US60203052 2000-05-04
PCT/US2001/014505 WO2001084682A2 (en) 2000-05-04 2001-05-04 Improved mirror and cavity designs for sampled-grating distributed bragg reflector lasers

Publications (1)

Publication Number Publication Date
AU2001259503A1 true AU2001259503A1 (en) 2001-11-12

Family

ID=22752272

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001259503A Abandoned AU2001259503A1 (en) 2000-05-04 2001-05-04 Improved mirror and cavity designs for sampled-grating distributed bragg reflector lasers

Country Status (9)

Country Link
US (1) US6590924B2 (en)
EP (1) EP1281221B8 (en)
JP (1) JP4989834B2 (en)
CN (1) CN1240167C (en)
AT (1) ATE403248T1 (en)
AU (1) AU2001259503A1 (en)
CA (1) CA2405852A1 (en)
DE (1) DE60135106D1 (en)
WO (1) WO2001084682A2 (en)

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US6822995B2 (en) 2002-02-21 2004-11-23 Finisar Corporation GaAs/AI(Ga)As distributed bragg reflector on InP
US8112958B2 (en) 2002-05-03 2012-02-14 Faus Group Flooring system having complementary sub-panels
US7836649B2 (en) 2002-05-03 2010-11-23 Faus Group, Inc. Flooring system having microbevels
US8181407B2 (en) 2002-05-03 2012-05-22 Faus Group Flooring system having sub-panels
US7860137B2 (en) 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
CA2581614A1 (en) 2004-10-01 2006-04-13 Finisar Corporation Vertical cavity surface emitting laser having multiple top-side contacts
US8201377B2 (en) 2004-11-05 2012-06-19 Faus Group, Inc. Flooring system having multiple alignment points
US20060104321A1 (en) * 2004-11-15 2006-05-18 Lightip Technologies Inc. Q-modulated semiconductor laser with electro-absorptive grating structures
JP4657853B2 (en) 2005-08-11 2011-03-23 住友電工デバイス・イノベーション株式会社 Semiconductor laser, laser module, optical component, laser device, semiconductor laser manufacturing method, and semiconductor laser control method
US7894693B2 (en) * 2007-04-05 2011-02-22 Eudyna Devices Inc. Optical semiconductor device and method of controlling the same
EP2174392B1 (en) * 2007-08-02 2020-04-29 EFFECT Photonics B.V. Semiconductor laser device
WO2013016249A2 (en) * 2011-07-22 2013-01-31 Insight Photonic Solutions, Inc. System and method of dynamic and adaptive creation of a wavelength-continuous and prescribed wavelength versus time sweep from a laser
JP2013219192A (en) * 2012-04-09 2013-10-24 Fujitsu Ltd Semiconductor laser
JP6241919B2 (en) * 2013-09-30 2017-12-06 住友電工デバイス・イノベーション株式会社 Optical semiconductor device
JP2016051807A (en) 2014-08-29 2016-04-11 富士通オプティカルコンポーネンツ株式会社 Semiconductor laser
US9312662B1 (en) 2014-09-30 2016-04-12 Lumentum Operations Llc Tunable laser source
JP6684094B2 (en) * 2015-03-20 2020-04-22 古河電気工業株式会社 Tunable laser device and laser module
JP6831782B2 (en) 2015-06-10 2021-02-17 古河電気工業株式会社 Pulse laser device
CN105356292B (en) * 2015-11-30 2018-11-02 武汉电信器件有限公司 A kind of tunable wavelength semiconductor laser
CN106981819B (en) * 2016-01-15 2019-05-28 华为技术有限公司 A kind of tunable laser and its control method
CN106941241B (en) * 2016-10-21 2019-06-04 武汉光迅科技股份有限公司 A kind of laser processing method and its application method based on EBL
CN111162454B (en) * 2020-01-02 2021-03-12 中国科学院半导体研究所 Broadband tuning system and tuning method

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US4896325A (en) * 1988-08-23 1990-01-23 The Regents Of The University Of California Multi-section tunable laser with differing multi-element mirrors
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US5088097A (en) 1990-04-04 1992-02-11 Canon Kabushiki Kaisha Semiconductor laser element capable of changing emission wavelength, and method of driving the same
US5325392A (en) * 1992-03-06 1994-06-28 Nippon Telegraph And Telephone Corporation Distributed reflector and wavelength-tunable semiconductor laser
JPH0653591A (en) * 1992-08-03 1994-02-25 Nippon Telegr & Teleph Corp <Ntt> Element for converting optical frequency
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Also Published As

Publication number Publication date
JP4989834B2 (en) 2012-08-01
WO2001084682A3 (en) 2002-04-11
DE60135106D1 (en) 2008-09-11
JP2003533037A (en) 2003-11-05
US20020105990A1 (en) 2002-08-08
CA2405852A1 (en) 2001-11-08
US6590924B2 (en) 2003-07-08
ATE403248T1 (en) 2008-08-15
CN1240167C (en) 2006-02-01
WO2001084682A2 (en) 2001-11-08
EP1281221B1 (en) 2008-07-30
CN1428018A (en) 2003-07-02
EP1281221A2 (en) 2003-02-05
EP1281221B8 (en) 2008-10-15

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