ATE274760T1 - Hochleistungslaser mit gesampeltem gitter und verteiltem bragg-reflektor - Google Patents
Hochleistungslaser mit gesampeltem gitter und verteiltem bragg-reflektorInfo
- Publication number
- ATE274760T1 ATE274760T1 AT01944233T AT01944233T ATE274760T1 AT E274760 T1 ATE274760 T1 AT E274760T1 AT 01944233 T AT01944233 T AT 01944233T AT 01944233 T AT01944233 T AT 01944233T AT E274760 T1 ATE274760 T1 AT E274760T1
- Authority
- AT
- Austria
- Prior art keywords
- high power
- light beam
- bragg reflector
- power laser
- distributed bragg
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06256—Controlling the frequency of the radiation with DBR-structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
- H01S5/1209—Sampled grating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
- H01S5/1243—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts by other means than a jump in the grating period, e.g. bent waveguides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3413—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers
- H01S5/3414—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers by vacancy induced interdiffusion
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Semiconductor Lasers (AREA)
- Optical Elements Other Than Lenses (AREA)
- Optical Fibers, Optical Fiber Cores, And Optical Fiber Bundles (AREA)
- Optical Integrated Circuits (AREA)
- Lasers (AREA)
Applications Claiming Priority (11)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US20906800P | 2000-06-02 | 2000-06-02 | |
US09/614,665 US6687278B1 (en) | 1999-09-02 | 2000-07-12 | Method of generating an optical signal with a tunable laser source with integrated optical amplifier |
US09/614,375 US6658035B1 (en) | 1999-09-02 | 2000-07-12 | Tunable laser source with integrated optical amplifier |
US09/614,224 US6654400B1 (en) | 1999-09-02 | 2000-07-12 | Method of making a tunable laser source with integrated optical amplifier |
US09/614,378 US6628690B1 (en) | 1999-09-02 | 2000-07-12 | Opto-electronic laser with integrated modulator |
US09/614,376 US6614819B1 (en) | 1999-09-02 | 2000-07-12 | Method of modulating an optical wavelength with an opto-electronic laser with integrated modulator |
US09/614,377 US6580739B1 (en) | 1999-09-02 | 2000-07-12 | Integrated opto-electronic wavelength converter assembly |
US09/614,895 US6349106B1 (en) | 1999-09-02 | 2000-07-12 | Method for converting an optical wavelength using a monolithic wavelength converter assembly |
US09/614,674 US6624000B1 (en) | 1999-09-02 | 2000-07-12 | Method for making a monolithic wavelength converter assembly |
US09/614,195 US6574259B1 (en) | 1999-09-02 | 2000-07-12 | Method of making an opto-electronic laser with integrated modulator |
PCT/US2001/017884 WO2001095444A2 (en) | 2000-06-02 | 2001-06-01 | High-power sampled grating distributed bragg reflector lasers |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE274760T1 true ATE274760T1 (de) | 2004-09-15 |
Family
ID=27581149
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT01944233T ATE274760T1 (de) | 2000-06-02 | 2001-06-01 | Hochleistungslaser mit gesampeltem gitter und verteiltem bragg-reflektor |
Country Status (8)
Country | Link |
---|---|
EP (1) | EP1290765B1 (de) |
JP (1) | JP5443660B2 (de) |
CN (1) | CN1227789C (de) |
AT (1) | ATE274760T1 (de) |
AU (1) | AU2001266663A1 (de) |
CA (1) | CA2410964C (de) |
DE (1) | DE60105154T2 (de) |
WO (1) | WO2001095444A2 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6822995B2 (en) | 2002-02-21 | 2004-11-23 | Finisar Corporation | GaAs/AI(Ga)As distributed bragg reflector on InP |
GB0206204D0 (en) * | 2002-03-15 | 2002-05-01 | Denselight Semiconductors Pte | Direct modulation of laser diode with chirp control |
CN101432936B (zh) | 2004-10-01 | 2011-02-02 | 菲尼萨公司 | 具有多顶侧接触的垂直腔面发射激光器 |
US7860137B2 (en) | 2004-10-01 | 2010-12-28 | Finisar Corporation | Vertical cavity surface emitting laser with undoped top mirror |
CN100377453C (zh) * | 2006-05-12 | 2008-03-26 | 何建军 | 带有电吸收光栅结构的q-调制半导体激光器 |
JP2008263216A (ja) * | 2008-06-03 | 2008-10-30 | Matsushita Electric Ind Co Ltd | 半導体レーザおよびその製造方法 |
CN102044844B (zh) * | 2010-11-24 | 2012-05-23 | 中国科学院半导体研究所 | 分布放大的取样光栅分布布拉格反射可调谐激光器 |
CN104412148B (zh) * | 2012-05-17 | 2017-10-10 | 菲尼萨公司 | 用于无源光网络(pon)应用的直接调制激光器 |
WO2015124954A2 (en) * | 2014-02-24 | 2015-08-27 | Rockley Photonics Limited | Detector remodulator and optoelectronic switch |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60145687A (ja) * | 1984-01-09 | 1985-08-01 | Nec Corp | 半導体レ−ザ− |
JPS60145686A (ja) * | 1984-01-09 | 1985-08-01 | Nec Corp | 半導体レ−ザ |
JPS6414988A (en) * | 1987-07-08 | 1989-01-19 | Nec Corp | Wavelength-tunable semiconductor laser |
JPH0626268B2 (ja) * | 1987-08-19 | 1994-04-06 | 日本電気株式会社 | 波長可変半導体レ−ザ |
JPH0636460B2 (ja) * | 1988-12-21 | 1994-05-11 | 光計測技術開発株式会社 | 半導体光集積回路の製造方法 |
JPH02211686A (ja) * | 1989-02-13 | 1990-08-22 | Mitsubishi Electric Corp | 半導体レーザ |
US5088097A (en) * | 1990-04-04 | 1992-02-11 | Canon Kabushiki Kaisha | Semiconductor laser element capable of changing emission wavelength, and method of driving the same |
JPH0439985A (ja) * | 1990-06-05 | 1992-02-10 | Fujitsu Ltd | 光ビーム偏向器 |
JP2913922B2 (ja) * | 1991-08-09 | 1999-06-28 | 日本電気株式会社 | 量子井戸分布帰還型半導体レーザ |
JPH0555689A (ja) * | 1991-08-23 | 1993-03-05 | Nippon Telegr & Teleph Corp <Ntt> | 波長制御機能付分布反射型半導体レーザ |
JP2832920B2 (ja) * | 1992-03-06 | 1998-12-09 | 日本電信電話株式会社 | 波長掃引機能付き半導体レーザ |
JP3226073B2 (ja) * | 1994-02-18 | 2001-11-05 | キヤノン株式会社 | 偏波変調可能な半導体レーザおよびその使用法 |
US5841799A (en) * | 1994-12-17 | 1998-11-24 | Canon Kabushiki Kaisha | Semiconductor laser, modulation method therefor and optical communication system using the same |
JP2877107B2 (ja) * | 1996-12-02 | 1999-03-31 | 日本電気株式会社 | 多重量子井戸型半導体レーザ |
JPH10117046A (ja) * | 1996-08-22 | 1998-05-06 | Canon Inc | 半導体レーザ及びその駆動法及びそれを用いた光送信器及びそれを用いた光通信システム |
JPH10256675A (ja) * | 1997-03-14 | 1998-09-25 | Canon Inc | 波長可変半導体レーザ、これの駆動方法及びこれを用いた光通信システム |
EP1172905A1 (de) * | 2000-07-11 | 2002-01-16 | Interuniversitair Microelektronica Centrum Vzw | Verfahren und Vorrichtung zur Kontrolle einer Laserstruktur |
-
2001
- 2001-06-01 WO PCT/US2001/017884 patent/WO2001095444A2/en active IP Right Grant
- 2001-06-01 CA CA2410964A patent/CA2410964C/en not_active Expired - Fee Related
- 2001-06-01 DE DE60105154T patent/DE60105154T2/de not_active Expired - Lifetime
- 2001-06-01 AU AU2001266663A patent/AU2001266663A1/en not_active Abandoned
- 2001-06-01 AT AT01944233T patent/ATE274760T1/de not_active IP Right Cessation
- 2001-06-01 EP EP01944233A patent/EP1290765B1/de not_active Expired - Lifetime
- 2001-06-01 CN CN01810499.1A patent/CN1227789C/zh not_active Expired - Lifetime
- 2001-06-01 JP JP2002502873A patent/JP5443660B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP5443660B2 (ja) | 2014-03-19 |
EP1290765A2 (de) | 2003-03-12 |
AU2001266663A1 (en) | 2001-12-17 |
CN1227789C (zh) | 2005-11-16 |
DE60105154D1 (de) | 2004-09-30 |
WO2001095444A3 (en) | 2002-06-20 |
EP1290765B1 (de) | 2004-08-25 |
DE60105154T2 (de) | 2005-09-08 |
CA2410964C (en) | 2010-11-30 |
CN1432207A (zh) | 2003-07-23 |
JP2003536264A (ja) | 2003-12-02 |
CA2410964A1 (en) | 2001-12-13 |
WO2001095444A2 (en) | 2001-12-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |