DE60039961D1 - Lichtemittierende diodenvorrichtung mit dünnschicht phosphor - Google Patents

Lichtemittierende diodenvorrichtung mit dünnschicht phosphor

Info

Publication number
DE60039961D1
DE60039961D1 DE60039961T DE60039961T DE60039961D1 DE 60039961 D1 DE60039961 D1 DE 60039961D1 DE 60039961 T DE60039961 T DE 60039961T DE 60039961 T DE60039961 T DE 60039961T DE 60039961 D1 DE60039961 D1 DE 60039961D1
Authority
DE
Germany
Prior art keywords
thin
light
emitting diode
diode device
layer phosphorus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60039961T
Other languages
English (en)
Inventor
Regina B Mueller-Mach
Gerd O Mueller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lumileds LLC
Original Assignee
Philips Lumileds Lighing Co LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Lumileds Lighing Co LLC filed Critical Philips Lumileds Lighing Co LLC
Application granted granted Critical
Publication of DE60039961D1 publication Critical patent/DE60039961D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/918—Light emitting regenerative switching device, e.g. light emitting scr arrays, circuitry

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
DE60039961T 1999-09-27 2000-09-25 Lichtemittierende diodenvorrichtung mit dünnschicht phosphor Expired - Lifetime DE60039961D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/405,938 US6696703B2 (en) 1999-09-27 1999-09-27 Thin film phosphor-converted light emitting diode device
PCT/US2000/026325 WO2001024283A1 (en) 1999-09-27 2000-09-25 Light emitting diode comprising a thin phosphor-conversion film

Publications (1)

Publication Number Publication Date
DE60039961D1 true DE60039961D1 (de) 2008-10-02

Family

ID=23605846

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60039961T Expired - Lifetime DE60039961D1 (de) 1999-09-27 2000-09-25 Lichtemittierende diodenvorrichtung mit dünnschicht phosphor

Country Status (7)

Country Link
US (2) US6696703B2 (de)
EP (1) EP1142032B1 (de)
JP (1) JP2001244507A (de)
KR (2) KR100948109B1 (de)
AU (1) AU7613700A (de)
DE (1) DE60039961D1 (de)
WO (1) WO2001024283A1 (de)

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US6696703B2 (en) 2004-02-24
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KR100948109B1 (ko) 2010-03-16
US20040164307A1 (en) 2004-08-26
JP2001244507A (ja) 2001-09-07
KR20010089504A (ko) 2001-10-06
US20020030444A1 (en) 2002-03-14
US7183577B2 (en) 2007-02-27
EP1142032A1 (de) 2001-10-10
WO2001024283A1 (en) 2001-04-05
EP1142032B1 (de) 2008-08-20

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