DE60039875D1 - Zyklisches thermisches ausheilverfahren zur reduktion von kristallversetzungen - Google Patents

Zyklisches thermisches ausheilverfahren zur reduktion von kristallversetzungen

Info

Publication number
DE60039875D1
DE60039875D1 DE60039875T DE60039875T DE60039875D1 DE 60039875 D1 DE60039875 D1 DE 60039875D1 DE 60039875 T DE60039875 T DE 60039875T DE 60039875 T DE60039875 T DE 60039875T DE 60039875 D1 DE60039875 D1 DE 60039875D1
Authority
DE
Germany
Prior art keywords
healing method
reducing crystal
cyclic thermal
thermal healing
translation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60039875T
Other languages
English (en)
Inventor
Hsin-Chiao Luan
Lionel C Kimerling
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Massachusetts Institute of Technology
Original Assignee
Massachusetts Institute of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Massachusetts Institute of Technology filed Critical Massachusetts Institute of Technology
Application granted granted Critical
Publication of DE60039875D1 publication Critical patent/DE60039875D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02694—Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28255—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor belonging to Group IV and not being elemental silicon, e.g. Ge, SiGe, SiGeC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
    • H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
    • H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Formation Of Insulating Films (AREA)
DE60039875T 1999-06-25 2000-06-23 Zyklisches thermisches ausheilverfahren zur reduktion von kristallversetzungen Expired - Lifetime DE60039875D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14114299P 1999-06-25 1999-06-25
PCT/US2000/017497 WO2001001465A1 (en) 1999-06-25 2000-06-23 Cyclic thermal anneal for dislocation reduction

Publications (1)

Publication Number Publication Date
DE60039875D1 true DE60039875D1 (de) 2008-09-25

Family

ID=22494354

Family Applications (2)

Application Number Title Priority Date Filing Date
DE60045126T Expired - Lifetime DE60045126D1 (de) 1999-06-25 2000-06-23 Oxidation einer auf einer germaniumschicht aufgebrachten siliziumschicht
DE60039875T Expired - Lifetime DE60039875D1 (de) 1999-06-25 2000-06-23 Zyklisches thermisches ausheilverfahren zur reduktion von kristallversetzungen

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE60045126T Expired - Lifetime DE60045126D1 (de) 1999-06-25 2000-06-23 Oxidation einer auf einer germaniumschicht aufgebrachten siliziumschicht

Country Status (5)

Country Link
US (2) US6635110B1 (de)
EP (2) EP1192646B1 (de)
DE (2) DE60045126D1 (de)
TW (2) TW449834B (de)
WO (2) WO2001001466A1 (de)

Families Citing this family (99)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002270516A (ja) * 2001-03-07 2002-09-20 Nec Corp Ｉｉｉ族窒化物半導体の成長方法、ｉｉｉ族窒化物半導体膜およびそれを用いた半導体素子
DE10127073A1 (de) * 2001-06-02 2002-12-12 Rossendorf Forschzent Verfahren zur Behandlung heteroepitaktischer Halbleiterschichten auf Siliziumsubstraten
US20030066998A1 (en) * 2001-08-02 2003-04-10 Lee Howard Wing Hoon Quantum dots of Group IV semiconductor materials
US6576532B1 (en) 2001-11-30 2003-06-10 Motorola Inc. Semiconductor device and method therefor
US20030111013A1 (en) * 2001-12-19 2003-06-19 Oosterlaken Theodorus Gerardus Maria Method for the deposition of silicon germanium layers
US6887773B2 (en) * 2002-06-19 2005-05-03 Luxtera, Inc. Methods of incorporating germanium within CMOS process
US6804440B2 (en) 2002-07-26 2004-10-12 Lnl Technologies, Inc. Integrated mode converter, waveguide, and on-chip function
GB0220438D0 (en) 2002-09-03 2002-10-09 Univ Warwick Formation of lattice-turning semiconductor substrates
WO2004038774A2 (en) * 2002-10-25 2004-05-06 Unaxis Balzers Ltd. Method for producing semi-conducting devices and devices obtained with this method
JP3851950B2 (ja) * 2002-11-19 2006-11-29 国立大学法人名古屋大学 シリコンゲルマニウム膜の作製方法、エピタキシャル成長用基板、多層膜構造体及びヘテロ接合電界効果トランジスタ
US7453129B2 (en) * 2002-12-18 2008-11-18 Noble Peak Vision Corp. Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry
US7018909B2 (en) * 2003-02-28 2006-03-28 S.O.I.Tec Silicon On Insulator Technologies S.A. Forming structures that include a relaxed or pseudo-relaxed layer on a substrate
US7348260B2 (en) * 2003-02-28 2008-03-25 S.O.I.Tec Silicon On Insulator Technologies Method for forming a relaxed or pseudo-relaxed useful layer on a substrate
US20040192067A1 (en) * 2003-02-28 2004-09-30 Bruno Ghyselen Method for forming a relaxed or pseudo-relaxed useful layer on a substrate
US7682947B2 (en) * 2003-03-13 2010-03-23 Asm America, Inc. Epitaxial semiconductor deposition methods and structures
US20050081910A1 (en) * 2003-08-22 2005-04-21 Danielson David T. High efficiency tandem solar cells on silicon substrates using ultra thin germanium buffer layers
US7138697B2 (en) * 2004-02-24 2006-11-21 International Business Machines Corporation Structure for and method of fabricating a high-speed CMOS-compatible Ge-on-insulator photodetector
WO2005084231A2 (en) * 2004-02-27 2005-09-15 Asm Aemrica, Inc. Germanium deposition
US20060014363A1 (en) * 2004-03-05 2006-01-19 Nicolas Daval Thermal treatment of a semiconductor layer
FR2867310B1 (fr) * 2004-03-05 2006-05-26 Soitec Silicon On Insulator Technique d'amelioration de la qualite d'une couche mince prelevee
FR2867307B1 (fr) * 2004-03-05 2006-05-26 Soitec Silicon On Insulator Traitement thermique apres detachement smart-cut
US7282449B2 (en) * 2004-03-05 2007-10-16 S.O.I.Tec Silicon On Insulator Technologies Thermal treatment of a semiconductor layer
WO2005094254A2 (en) * 2004-03-17 2005-10-13 The Board Of Trustees Of The Leland Stanford Junior University Crystalline-type device and approach therefor
US7749872B2 (en) * 2004-03-17 2010-07-06 The Board Of Trustees Of The Leland Stanford Junior University Crystalline-type device and approach therefor
FR2868202B1 (fr) 2004-03-25 2006-05-26 Commissariat Energie Atomique Procede de preparation d'une couche de dioxyde de silicium par oxydation a haute temperature sur un substrat presentant au moins en surface du germanium ou un alliage sicicium- germanium.
DE602005027196D1 (de) * 2004-04-30 2011-05-12 Dichroic Cell S R L Verfahren zur herstellung von virtuellen ge-substraten zur iii/v-integration auf si(001)
US7135391B2 (en) * 2004-05-21 2006-11-14 International Business Machines Corporation Polycrystalline SiGe junctions for advanced devices
US7217578B1 (en) * 2004-08-02 2007-05-15 Advanced Micro Devices, Inc. Advanced process control of thermal oxidation processes, and systems for accomplishing same
EP1655767B1 (de) 2004-10-13 2017-03-22 Imec Verfahren zur Herstellung eines passivierten Halbleitersubstrats
US7247545B2 (en) * 2004-11-10 2007-07-24 Sharp Laboratories Of America, Inc. Fabrication of a low defect germanium film by direct wafer bonding
FR2880988B1 (fr) * 2005-01-19 2007-03-30 Soitec Silicon On Insulator TRAITEMENT D'UNE COUCHE EN SI1-yGEy PRELEVEE
US20080121932A1 (en) * 2006-09-18 2008-05-29 Pushkar Ranade Active regions with compatible dielectric layers
US7220632B2 (en) * 2005-02-24 2007-05-22 Freescale Semiconductor, Inc. Method of forming a semiconductor device and an optical device and structure thereof
US7008813B1 (en) * 2005-02-28 2006-03-07 Sharp Laboratories Of America, Inc.. Epitaxial growth of germanium photodetector for CMOS imagers
KR100610465B1 (ko) * 2005-03-25 2006-08-08 주식회사 하이닉스반도체 반도체 소자의 제조 방법
US8324660B2 (en) 2005-05-17 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US9153645B2 (en) 2005-05-17 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
FR2886457B1 (fr) * 2005-05-27 2007-12-07 Soitec Silicon On Insulator Procede de fabrication d'une structure a couche d'oxyde d'epaisseur desiree,notammentt sur substrat de ge ou sige
US7037856B1 (en) 2005-06-10 2006-05-02 Sharp Laboratories Of America, Inc. Method of fabricating a low-defect strained epitaxial germanium film on silicon
US7413939B2 (en) * 2005-06-10 2008-08-19 Sharp Laboratories Of America, Inc. Method of growing a germanium epitaxial film on insulator for use in fabrication of CMOS integrated circuit
JP5481067B2 (ja) 2005-07-26 2014-04-23 台湾積體電路製造股▲ふん▼有限公司 代替活性エリア材料の集積回路への組み込みのための解決策
US7495254B2 (en) 2005-08-30 2009-02-24 International Business Machines Corporation Test structure and method for detecting and studying crystal lattice dislocation defects in integrated circuit devices
US7638842B2 (en) * 2005-09-07 2009-12-29 Amberwave Systems Corporation Lattice-mismatched semiconductor structures on insulators
US20070054467A1 (en) * 2005-09-07 2007-03-08 Amberwave Systems Corporation Methods for integrating lattice-mismatched semiconductor structure on insulators
US7305157B2 (en) * 2005-11-08 2007-12-04 Massachusetts Institute Of Technology Vertically-integrated waveguide photodetector apparatus and related coupling methods
US20070104441A1 (en) * 2005-11-08 2007-05-10 Massachusetts Institute Of Technology Laterally-integrated waveguide photodetector apparatus and related coupling methods
US7266263B2 (en) * 2005-11-08 2007-09-04 Massachusetts Institute Of Technology Integrated waveguide photodetector apparatus with matching propagation constants and related coupling methods
US7777250B2 (en) 2006-03-24 2010-08-17 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures and related methods for device fabrication
US20070235345A1 (en) * 2006-04-07 2007-10-11 Applied Materials, Inc. Polishing method that suppresses hillock formation
EP2062290B1 (de) 2006-09-07 2019-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Defektreduzierung durch kontrolle des aspektverhältnisses
WO2008036256A1 (en) * 2006-09-18 2008-03-27 Amberwave Systems Corporation Aspect ratio trapping for mixed signal applications
US7799592B2 (en) 2006-09-27 2010-09-21 Taiwan Semiconductor Manufacturing Company, Ltd. Tri-gate field-effect transistors formed by aspect ratio trapping
US7875958B2 (en) 2006-09-27 2011-01-25 Taiwan Semiconductor Manufacturing Company, Ltd. Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures
US8502263B2 (en) 2006-10-19 2013-08-06 Taiwan Semiconductor Manufacturing Company, Ltd. Light-emitter-based devices with lattice-mismatched semiconductor structures
US7651880B2 (en) * 2006-11-04 2010-01-26 Sharp Laboratories Of America, Inc. Ge short wavelength infrared imager
US7825328B2 (en) * 2007-04-09 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride-based multi-junction solar cell modules and methods for making the same
US8304805B2 (en) 2009-01-09 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
US8237151B2 (en) 2009-01-09 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Diode-based devices and methods for making the same
WO2008124154A2 (en) 2007-04-09 2008-10-16 Amberwave Systems Corporation Photovoltaics on silicon
US8329541B2 (en) 2007-06-15 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. InP-based transistor fabrication
US20110084308A1 (en) * 2007-08-08 2011-04-14 Ter-Hoe Loh Semiconductor arrangement and a method for manufacturing the same
DE112008002387B4 (de) 2007-09-07 2022-04-07 Taiwan Semiconductor Manufacturing Co., Ltd. Struktur einer Mehrfachübergangs-Solarzelle, Verfahren zur Bildung einer photonischenVorrichtung, Photovoltaische Mehrfachübergangs-Zelle und Photovoltaische Mehrfachübergangs-Zellenvorrichtung,
US7851378B2 (en) * 2007-09-11 2010-12-14 National Applied Research Laboratories Method for growing Ge expitaxial layer on patterned structure with cyclic annealing
US8257997B2 (en) * 2007-10-17 2012-09-04 Sifotonics Technologies (Usa) Inc. Semiconductor photodetectors
US7723206B2 (en) 2007-12-05 2010-05-25 Fujifilm Corporation Photodiode
US20090184382A1 (en) * 2008-01-23 2009-07-23 Katherine Hartman Method to reduce dislocation density in silicon
US8183667B2 (en) 2008-06-03 2012-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial growth of crystalline material
US8274097B2 (en) 2008-07-01 2012-09-25 Taiwan Semiconductor Manufacturing Company, Ltd. Reduction of edge effects from aspect ratio trapping
US8981427B2 (en) 2008-07-15 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing of small composite semiconductor materials
US7732886B2 (en) * 2008-07-15 2010-06-08 United Microelectronics Corp. Pin photodiode structure
US20100072515A1 (en) 2008-09-19 2010-03-25 Amberwave Systems Corporation Fabrication and structures of crystalline material
JP5416212B2 (ja) 2008-09-19 2014-02-12 台湾積體電路製造股▲ふん▼有限公司 エピタキシャル層の成長によるデバイス形成
US8253211B2 (en) 2008-09-24 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor sensor structures with reduced dislocation defect densities
US8138066B2 (en) * 2008-10-01 2012-03-20 International Business Machines Corporation Dislocation engineering using a scanned laser
DE102009001379B4 (de) * 2009-03-06 2015-08-06 Pacific Speed Ltd. Halbleiterverbund-Epitaxialwafer und dessen Herstellungsverfahren
CN102379046B (zh) 2009-04-02 2015-06-17 台湾积体电路制造股份有限公司 从晶体材料的非极性平面形成的器件及其制作方法
US8623728B2 (en) 2009-07-28 2014-01-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming high germanium concentration SiGe stressor
SG169922A1 (en) * 2009-09-24 2011-04-29 Taiwan Semiconductor Mfg Improved semiconductor sensor structures with reduced dislocation defect densities and related methods for the same
WO2011038390A2 (en) * 2009-09-28 2011-03-31 Massachusetts Institute Of Technology Method to reduce dislocation density in silicon using stress
TWI562195B (en) 2010-04-27 2016-12-11 Pilegrowth Tech S R L Dislocation and stress management by mask-less processes using substrate patterning and methods for device fabrication
US9127345B2 (en) 2012-03-06 2015-09-08 Asm America, Inc. Methods for depositing an epitaxial silicon germanium layer having a germanium to silicon ratio greater than 1:1 using silylgermane and a diluent
KR101240537B1 (ko) * 2012-05-07 2013-03-11 (주)실리콘화일 이종접합 구조의 칩 적층 이미지센서 및 그 제조방법
US9171715B2 (en) 2012-09-05 2015-10-27 Asm Ip Holding B.V. Atomic layer deposition of GeO2
DE102013201644A1 (de) 2012-09-19 2014-03-20 Ihp Gmbh - Innovations For High Performance Microelectronics / Leibniz-Institut Für Innovative Mikroelektronik Germanium PIN-Fotodiode für die Integration in eine CMOS- oder BiCMOS-Technologie
KR101419533B1 (ko) * 2012-12-31 2014-07-14 성균관대학교산학협력단 저마늄을 이용한 반도체 소자의 접합 영역에서의 결함 치유 방법
US9218963B2 (en) 2013-12-19 2015-12-22 Asm Ip Holding B.V. Cyclical deposition of germanium
KR102183594B1 (ko) * 2014-12-15 2020-11-26 스트라티오 인코포레이티드 제어된 열적 산화에 의한 에피 성장한 게르마늄에서의 표면 거칠기의 감소
US9864138B2 (en) 2015-01-05 2018-01-09 The Research Foundation For The State University Of New York Integrated photonics including germanium
TWI646581B (zh) 2015-02-09 2019-01-01 聯華電子股份有限公司 製作鍺磊晶層之方法以及應用其之製作元件之方法
FI127415B (en) 2015-04-16 2018-05-31 Turun Yliopisto Preparation of foreign oxide in a semiconductor
TW201718930A (zh) 2015-09-04 2017-06-01 南洋理工大學 具有經減低之線差排密度的基材之製造方法
US10435814B2 (en) 2015-10-30 2019-10-08 The Board Of Trustees Of The Leland Stanford Junior University Single metal crystals
US10976491B2 (en) 2016-11-23 2021-04-13 The Research Foundation For The State University Of New York Photonics interposer optoelectronics
FR3064398B1 (fr) * 2017-03-21 2019-06-07 Soitec Structure de type semi-conducteur sur isolant, notamment pour un capteur d'image de type face avant, et procede de fabrication d'une telle structure
US10698156B2 (en) 2017-04-27 2020-06-30 The Research Foundation For The State University Of New York Wafer scale bonded active photonics interposer
WO2019195441A1 (en) 2018-04-04 2019-10-10 The Research Foundation For The State University Of New York Heterogeneous structure on an integrated photonics platform
US10816724B2 (en) 2018-04-05 2020-10-27 The Research Foundation For The State University Of New York Fabricating photonics structure light signal transmission regions
TWI829761B (zh) 2018-11-21 2024-01-21 紐約州立大學研究基金會 具有積體雷射的光學結構
US11550099B2 (en) 2018-11-21 2023-01-10 The Research Foundation For The State University Of New York Photonics optoelectrical system

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2131407B (en) * 1982-11-12 1987-02-04 Rca Corp Method of formation of silicon dioxide layer
US5091333A (en) * 1983-09-12 1992-02-25 Massachusetts Institute Of Technology Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth
US4632712A (en) 1983-09-12 1986-12-30 Massachusetts Institute Of Technology Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth
US4604304A (en) * 1985-07-03 1986-08-05 Rca Corporation Process of producing thick layers of silicon dioxide
US4814291A (en) * 1986-02-25 1989-03-21 American Telephone And Telegraph Company, At&T Bell Laboratories Method of making devices having thin dielectric layers
US4876210A (en) 1987-04-30 1989-10-24 The University Of Delaware Solution growth of lattice mismatched and solubility mismatched heterostructures
JPH01220834A (ja) * 1988-02-29 1989-09-04 Nippon Telegr & Teleph Corp <Ntt> 薄膜形成方法
US4987095A (en) 1988-06-15 1991-01-22 International Business Machines Corp. Method of making unpinned oxide-compound semiconductor structures
US5019882A (en) * 1989-05-15 1991-05-28 International Business Machines Corporation Germanium channel silicon MOSFET
US5210052A (en) 1989-05-18 1993-05-11 Fujitsu Limited Method for fabricating a semiconductor substrate
US5089428A (en) * 1989-12-27 1992-02-18 Texas Instruments Incorporated Method for forming a germanium layer and a heterojunction bipolar transistor
US5168330A (en) 1990-12-03 1992-12-01 Research Triangle Institute Semiconductor device having a semiconductor substrate interfaced to a dissimilar material by means of a single crystal pseudomorphic interlayer
US5091767A (en) 1991-03-18 1992-02-25 At&T Bell Laboratories Article comprising a lattice-mismatched semiconductor heterostructure
US5268324A (en) * 1992-05-27 1993-12-07 International Business Machines Corporation Modified silicon CMOS process having selectively deposited Si/SiGe FETS
US5466949A (en) * 1994-08-04 1995-11-14 Texas Instruments Incorporated Silicon oxide germanium resonant tunneling
JP3441277B2 (ja) * 1995-12-26 2003-08-25 株式会社東芝 半導体装置およびその製造方法
US6130144A (en) * 1997-01-02 2000-10-10 Texas Instruments Incorporated Method for making very shallow junctions in silicon devices
AU9674498A (en) 1997-10-10 1999-05-03 Cornell Research Foundation Inc. Methods for growing defect-free heteroepitaxial layers

Also Published As

Publication number Publication date
WO2001001465A1 (en) 2001-01-04
EP1192646B1 (de) 2008-08-13
DE60045126D1 (de) 2010-12-02
EP1192646A1 (de) 2002-04-03
EP1192647B1 (de) 2010-10-20
US6352942B1 (en) 2002-03-05
EP1192647A1 (de) 2002-04-03
TW484234B (en) 2002-04-21
US6635110B1 (en) 2003-10-21
WO2001001466A1 (en) 2001-01-04
TW449834B (en) 2001-08-11

Similar Documents

Publication Publication Date Title
DE60039875D1 (de) Zyklisches thermisches ausheilverfahren zur reduktion von kristallversetzungen
DE60009327D1 (de) Verbesserte schnittstelle zur verwaltung von verfahrenseichvorrichtungen
DK1121192T3 (da) Fremgangsmåde til homogenisering
DE60022813D1 (de) System und Methode zur Stromerzeugung
DE60024562D1 (de) Gerät zur Entnahme von weichem Gewebe
DE69924750D1 (de) Gerät zur thermischen behandlung von gewebe
ID25682A (id) Metode untuk melelehkan kaca
DE59705086D1 (de) Implantat zur fixierung einer osteotomie
DE69733328D1 (de) Gerät zur Verminderung von Kopfschmerzen
DE69831027D1 (de) Vorrichtungen zur Entnahme von weichem Gewebe
DE69931967D1 (de) Methode zur sicherung von elektronischer information
DE60033051D1 (de) Methode und einrichtung zur kontinuierlichen herstellung von diarylcarbonaten
DE60028912D1 (de) Verfahren zur Herstellung von Hableitervorrichtungen
DE60025010D1 (de) Chirurgisches system zur befestigung von gewebe
NO20001870L (no) Ny fremgangsmÕte for behandling
DE60139465D1 (de) Vorrichtung zur kompensation von verzerrungen
DE60210482D1 (de) Vorrichtung und methode zur automatischen kompensation von synchronen störungen
DE60041191D1 (de) Methode und vorrichtung zur herstellung von innen-verstärkten säcken
DE69840751D1 (de) Gerät zur wärmebehandlung
ATE366797T1 (de) Verfharen zur konservierung von viren und mycoplasma
DE60034526D1 (de) System zur reduzierung von energieverbrauch
NO20013914D0 (no) Temperaturkompensert NMR-apparat og -fremgangsmate
ID30091A (id) Metode untuk menyiapkan l-fenilefrina hidroklorida
DE69916725D1 (de) Vorrichtung zur herstellung von zement
DE50000523D1 (de) Vorrichtung zur herstellung von einkristallen

Legal Events

Date Code Title Description
8364 No opposition during term of opposition