DE60039800D1 - Drahtbundverfahren auf Kupfer - Google Patents

Drahtbundverfahren auf Kupfer

Info

Publication number
DE60039800D1
DE60039800D1 DE60039800T DE60039800T DE60039800D1 DE 60039800 D1 DE60039800 D1 DE 60039800D1 DE 60039800 T DE60039800 T DE 60039800T DE 60039800 T DE60039800 T DE 60039800T DE 60039800 D1 DE60039800 D1 DE 60039800D1
Authority
DE
Germany
Prior art keywords
copper
wire bundle
bundle method
wire
bundle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60039800T
Other languages
English (en)
Inventor
Sailesh Chittipeddi
Sailesh Mansinh Merchant
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia of America Corp
Original Assignee
Lucent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=22889365&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE60039800(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Lucent Technologies Inc filed Critical Lucent Technologies Inc
Application granted granted Critical
Publication of DE60039800D1 publication Critical patent/DE60039800D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

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    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
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Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19843624C1 (de) * 1998-09-23 2000-06-15 Siemens Ag Integrierte Schaltungsanordnung und Verfahren zu deren Herstellung
US6303423B1 (en) 1998-12-21 2001-10-16 Megic Corporation Method for forming high performance system-on-chip using post passivation process
US6790757B1 (en) 1999-12-20 2004-09-14 Agere Systems Inc. Wire bonding method for copper interconnects in semiconductor devices
JP2002076051A (ja) * 2000-09-01 2002-03-15 Nec Corp 半導体装置のボンディングパッド構造及びボンディング方法
EP1119046A3 (de) * 2000-01-21 2002-07-03 Lucent Technologies Inc. Drahtverbindungstechnik und Architektur geeignet für Kupfermetallisierung in Halbleiterstrukturen
JP3651765B2 (ja) * 2000-03-27 2005-05-25 株式会社東芝 半導体装置
KR20020006779A (ko) * 2000-07-13 2002-01-26 박종섭 반도체 장치의 금속배선 형성방법
KR100374300B1 (ko) * 2000-10-06 2003-03-03 동부전자 주식회사 반도체용 구리 배선 제조 방법
JP2003031575A (ja) * 2001-07-17 2003-01-31 Nec Corp 半導体装置及びその製造方法
US6683383B2 (en) * 2001-10-18 2004-01-27 Intel Corporation Wirebond structure and method to connect to a microelectronic die
US6949461B2 (en) * 2002-12-11 2005-09-27 International Business Machines Corporation Method for depositing a metal layer on a semiconductor interconnect structure
US7262133B2 (en) * 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
US7566964B2 (en) * 2003-04-10 2009-07-28 Agere Systems Inc. Aluminum pad power bus and signal routing for integrated circuit devices utilizing copper technology interconnect structures
US20050098605A1 (en) * 2003-11-06 2005-05-12 International Business Machines Corporation Apparatus and method for low pressure wirebond
JP4696532B2 (ja) * 2004-05-20 2011-06-08 株式会社デンソー パワー複合集積型半導体装置およびその製造方法
US7833896B2 (en) * 2004-09-23 2010-11-16 Taiwan Semiconductor Manufacturing Company, Ltd. Aluminum cap for reducing scratch and wire-bond bridging of bond pads
US8384189B2 (en) 2005-03-29 2013-02-26 Megica Corporation High performance system-on-chip using post passivation process
US8399989B2 (en) * 2005-07-29 2013-03-19 Megica Corporation Metal pad or metal bump over pad exposed by passivation layer
US8148822B2 (en) * 2005-07-29 2012-04-03 Megica Corporation Bonding pad on IC substrate and method for making the same
US8076779B2 (en) * 2005-11-08 2011-12-13 Lsi Corporation Reduction of macro level stresses in copper/low-K wafers
JP2008066451A (ja) * 2006-09-06 2008-03-21 Rohm Co Ltd 半導体装置
US20090057907A1 (en) * 2007-08-30 2009-03-05 Ming-Tzong Yang Interconnection structure
US7947592B2 (en) * 2007-12-14 2011-05-24 Semiconductor Components Industries, Llc Thick metal interconnect with metal pad caps at selective sites and process for making the same
US8610283B2 (en) * 2009-10-05 2013-12-17 International Business Machines Corporation Semiconductor device having a copper plug
US9831122B2 (en) 2012-05-29 2017-11-28 Globalfoundries Inc. Integrated circuit including wire structure, related method and design structure
US20150212357A1 (en) * 2014-01-24 2015-07-30 Himax Display, Inc. Manufacturing process for liquid crystal display panel
US10115688B2 (en) * 2015-05-29 2018-10-30 Infineon Technologies Ag Solder metallization stack and methods of formation thereof
US9761548B1 (en) * 2016-05-19 2017-09-12 Infineon Technologies Ag Bond pad structure
KR20210098582A (ko) 2020-01-31 2021-08-11 삼성전자주식회사 반도체 장치

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3733685A (en) * 1968-11-25 1973-05-22 Gen Motors Corp Method of making a passivated wire bonded semiconductor device
JPS5982737A (ja) * 1982-11-04 1984-05-12 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の電極部構造およびその製造方法
US4845543A (en) * 1983-09-28 1989-07-04 Hitachi, Ltd. Semiconductor device and method of manufacturing the same
JPS63128634A (ja) * 1986-11-18 1988-06-01 Nec Corp 半導体装置の製造方法
JPH0727921B2 (ja) * 1987-07-31 1995-03-29 日本電気株式会社 半導体装置の製造方法
JP2563652B2 (ja) * 1990-07-17 1996-12-11 株式会社東芝 半導体装置及びその製造方法
JPH0567686A (ja) * 1991-09-09 1993-03-19 Hitachi Ltd 半導体装置配線
JPH0878410A (ja) * 1994-09-05 1996-03-22 Mitsubishi Electric Corp 配線接続部及びその製造方法
US5661081A (en) * 1994-09-30 1997-08-26 United Microelectronics Corporation Method of bonding an aluminum wire to an intergrated circuit bond pad
US6537905B1 (en) * 1996-12-30 2003-03-25 Applied Materials, Inc. Fully planarized dual damascene metallization using copper line interconnect and selective CVD aluminum plug
US6069068A (en) * 1997-05-30 2000-05-30 International Business Machines Corporation Sub-quarter-micron copper interconnections with improved electromigration resistance and reduced defect sensitivity
JP3906522B2 (ja) * 1997-06-10 2007-04-18 ソニー株式会社 半導体装置の製造方法
US6197688B1 (en) * 1998-02-12 2001-03-06 Motorola Inc. Interconnect structure in a semiconductor device and method of formation
US5968333A (en) * 1998-04-07 1999-10-19 Advanced Micro Devices, Inc. Method of electroplating a copper or copper alloy interconnect
US6117769A (en) * 1998-08-11 2000-09-12 Advanced Micro Devices, Inc. Pad structure for copper interconnection and its formation

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JP3575676B2 (ja) 2004-10-13
KR100659801B1 (ko) 2006-12-19
EP1022776A3 (de) 2000-09-13
EP1022776B1 (de) 2008-08-13
TW426980B (en) 2001-03-21
JP2000216191A (ja) 2000-08-04
US20010036716A1 (en) 2001-11-01
KR20000057792A (ko) 2000-09-25
US6472304B2 (en) 2002-10-29
EP1022776A2 (de) 2000-07-26

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