DE60039513D1 - Echtzeit voraussagung der resist-erwärmung durch proximität und korrektur der raster scan elektronenstrahl-lithographie - Google Patents
Echtzeit voraussagung der resist-erwärmung durch proximität und korrektur der raster scan elektronenstrahl-lithographieInfo
- Publication number
- DE60039513D1 DE60039513D1 DE60039513T DE60039513T DE60039513D1 DE 60039513 D1 DE60039513 D1 DE 60039513D1 DE 60039513 T DE60039513 T DE 60039513T DE 60039513 T DE60039513 T DE 60039513T DE 60039513 D1 DE60039513 D1 DE 60039513D1
- Authority
- DE
- Germany
- Prior art keywords
- proximity
- correction
- real
- electron beam
- beam lithography
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
- G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
- G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31769—Proximity effect correction
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/343,960 US6373071B1 (en) | 1999-06-30 | 1999-06-30 | Real-time prediction of proximity resist heating and correction of raster scan electron beam lithography |
PCT/US2000/017706 WO2001001440A1 (en) | 1999-06-30 | 2000-06-27 | Real-time prediction of proximity resist heating and correction of raster scan electron beam lithography |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60039513D1 true DE60039513D1 (de) | 2008-08-28 |
Family
ID=23348414
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60039513T Expired - Fee Related DE60039513D1 (de) | 1999-06-30 | 2000-06-27 | Echtzeit voraussagung der resist-erwärmung durch proximität und korrektur der raster scan elektronenstrahl-lithographie |
Country Status (7)
Country | Link |
---|---|
US (1) | US6373071B1 (de) |
EP (1) | EP1190434B1 (de) |
JP (1) | JP2003503837A (de) |
KR (1) | KR100752967B1 (de) |
AU (1) | AU5772300A (de) |
DE (1) | DE60039513D1 (de) |
WO (1) | WO2001001440A1 (de) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6720565B2 (en) * | 1999-06-30 | 2004-04-13 | Applied Materials, Inc. | Real-time prediction of and correction of proximity resist heating in raster scan particle beam lithography |
FR2806527B1 (fr) * | 2000-03-20 | 2002-10-25 | Schlumberger Technologies Inc | Colonne a focalisation simultanee d'un faisceau de particules et d'un faisceau optique |
US6420717B1 (en) * | 2000-04-11 | 2002-07-16 | Applied Materials, Inc. | Method and apparatus for real-time correction of resist heating in lithography |
US6379851B1 (en) * | 2000-07-31 | 2002-04-30 | Applied Materials, Inc. | Methods to predict and correct resist heating during lithography |
US6548223B2 (en) * | 2001-02-28 | 2003-04-15 | Micron Technology, Inc. | Methods of forming patterns across photoresist and methods of forming radiation-patterning tools |
DE102004018147A1 (de) * | 2004-04-08 | 2005-11-03 | Leica Microsystems Lithography Gmbh | Einrichtung und Verfahren zur Erzeugung von Resistprofilen |
US7115866B1 (en) * | 2005-04-28 | 2006-10-03 | Kla-Tencor Technologies, Inc. | Site stepping for electron beam micro analysis |
JP4825450B2 (ja) * | 2005-05-16 | 2011-11-30 | 株式会社東芝 | パターン描画システム、荷電ビーム描画方法、及びフォトマスク製造方法 |
US7897008B2 (en) * | 2006-10-27 | 2011-03-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for regional plasma control |
US7902528B2 (en) * | 2006-11-21 | 2011-03-08 | Cadence Design Systems, Inc. | Method and system for proximity effect and dose correction for a particle beam writing device |
US7824828B2 (en) * | 2007-02-22 | 2010-11-02 | Cadence Design Systems, Inc. | Method and system for improvement of dose correction for particle beam writers |
US8387674B2 (en) | 2007-11-30 | 2013-03-05 | Taiwan Semiconductor Manufacturing Comany, Ltd. | Chip on wafer bonder |
US8178280B2 (en) * | 2010-02-05 | 2012-05-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Self-contained proximity effect correction inspiration for advanced lithography (special) |
JP5894856B2 (ja) * | 2012-05-22 | 2016-03-30 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
WO2014071091A1 (en) * | 2012-11-02 | 2014-05-08 | D2S, Inc. | Method and system for improving critical dimension uniformity using shaped beam lithography |
TWI534528B (zh) * | 2013-03-27 | 2016-05-21 | Nuflare Technology Inc | Drawing an amount of the charged particle beam to obtain the modulation factor of a charged particle beam irradiation apparatus and method |
US9541846B2 (en) * | 2013-09-06 | 2017-01-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Homogeneous thermal equalization with active device |
JP2016184605A (ja) * | 2015-03-25 | 2016-10-20 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及び描画データ作成方法 |
US10032603B2 (en) | 2015-09-07 | 2018-07-24 | Nuflare Technology, Inc. | Charged particle beam lithography apparatus and charged particle beam lithography method |
US10460071B2 (en) * | 2015-11-04 | 2019-10-29 | D2S, Inc. | Shaped beam lithography including temperature effects |
CN109227226B (zh) * | 2018-11-12 | 2020-11-03 | 中国科学院光电技术研究所 | 一种光学元件加工过程中驻留时间的匀滑方法 |
US11654635B2 (en) | 2019-04-18 | 2023-05-23 | The Research Foundation For Suny | Enhanced non-destructive testing in directed energy material processing |
CN117581158A (zh) | 2022-04-26 | 2024-02-20 | 纽富来科技股份有限公司 | 多带电粒子束描绘装置、多带电粒子束描绘方法以及记录有程序的可读取记录介质 |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3720832A (en) | 1971-02-03 | 1973-03-13 | Automation Ind Inc | Infrared scanning system for material testing |
JPS5171177A (de) | 1974-12-18 | 1976-06-19 | Canon Kk | |
US4102194A (en) | 1976-09-20 | 1978-07-25 | Dickey-John Corporation | Electronic bin temperature monitor |
DE3067832D1 (en) | 1980-07-10 | 1984-06-20 | Ibm | Process for compensating the proximity effect in electron beam projection devices |
US4504558A (en) | 1980-07-10 | 1985-03-12 | International Business Machines Corporation | Method of compensating the proximity effect in electron beam projection systems |
EP0057290A1 (de) | 1981-02-02 | 1982-08-11 | Hoogovens Groep B.V. | Temperaturabtaster |
US4563682A (en) | 1983-03-11 | 1986-01-07 | Nordson Corporation | Scanning temperature display system |
US4821337A (en) | 1985-10-30 | 1989-04-11 | Alm Ake W | Radiation scanner uniformity system |
US4719350A (en) | 1986-01-30 | 1988-01-12 | Hughes Aircraft Co. | Radiation imaging enhancement |
US4712010A (en) | 1986-01-30 | 1987-12-08 | Hughes Aircraft Company | Radiator scanning with image enhancement and noise reduction |
US4859832A (en) | 1986-09-08 | 1989-08-22 | Nikon Corporation | Light radiation apparatus |
DE69030078T2 (de) * | 1990-02-22 | 1997-08-07 | At & T Corp | Fertigungsjustierung während Produktherstellung |
US5051598A (en) | 1990-09-12 | 1991-09-24 | International Business Machines Corporation | Method for correcting proximity effects in electron beam lithography |
US5085525A (en) | 1990-10-19 | 1992-02-04 | Square D Company | Scanning infrared temperature sensor with sighting apparatus |
US5254438A (en) | 1990-11-29 | 1993-10-19 | Hewlett-Packard Company | Single pass compensation for electron beam proximity effect |
US5219226A (en) | 1991-10-25 | 1993-06-15 | Quadtek, Inc. | Imaging and temperature monitoring system |
US5336892A (en) | 1992-05-13 | 1994-08-09 | The United States Of America As Represented By The Secretary Of The Navy | Method and system for electron beam lithography |
EP0608657A1 (de) | 1993-01-29 | 1994-08-03 | International Business Machines Corporation | Vorrichtung und Verfahren zur Verarbeitung von Formdaten zur Korrektur von Streveffekten |
JP3378413B2 (ja) | 1994-09-16 | 2003-02-17 | 株式会社東芝 | 電子線描画装置及び電子線描画方法 |
JP3964469B2 (ja) | 1994-11-08 | 2007-08-22 | 株式会社東芝 | 形状シミュレーション方法 |
US5532496A (en) | 1994-12-14 | 1996-07-02 | International Business Machines Corporation | Proximity effect compensation in scattering-mask lithographic projection systems and apparatus therefore |
JP3376178B2 (ja) | 1995-07-26 | 2003-02-10 | 株式会社東芝 | 形状シミュレーション方法とマスク設計方法 |
JP3934719B2 (ja) | 1995-12-22 | 2007-06-20 | 株式会社東芝 | 光近接効果補正方法 |
JP3469422B2 (ja) * | 1996-02-23 | 2003-11-25 | 株式会社東芝 | 荷電ビーム描画方法及び描画装置 |
US5736281A (en) | 1996-06-07 | 1998-04-07 | Lucent Technologies Inc. | Dose modification proximity effect compensation (PEC) technique for electron beam lithography |
JP3364385B2 (ja) | 1996-08-22 | 2003-01-08 | 株式会社東芝 | 形状シミュレーション方法 |
US5838013A (en) | 1996-11-13 | 1998-11-17 | International Business Machines Corporation | Method for monitoring resist charging in a charged particle system |
US5847959A (en) | 1997-01-28 | 1998-12-08 | Etec Systems, Inc. | Method and apparatus for run-time correction of proximity effects in pattern generation |
US5876902A (en) | 1997-01-28 | 1999-03-02 | Etec Systems, Inc. | Raster shaped beam writing strategy system and method for pattern generation |
JP4131880B2 (ja) * | 1997-07-31 | 2008-08-13 | 株式会社東芝 | マスクデータ作成方法及びマスクデータ作成装置 |
JP2000156342A (ja) * | 1998-06-30 | 2000-06-06 | Toshiba Corp | 電子線描画システムおよびその制御方法 |
JP3913924B2 (ja) * | 1999-03-19 | 2007-05-09 | 株式会社東芝 | パターン描画方法及び描画装置 |
-
1999
- 1999-06-30 US US09/343,960 patent/US6373071B1/en not_active Expired - Fee Related
-
2000
- 2000-06-27 DE DE60039513T patent/DE60039513D1/de not_active Expired - Fee Related
- 2000-06-27 JP JP2001506571A patent/JP2003503837A/ja active Pending
- 2000-06-27 KR KR1020017016882A patent/KR100752967B1/ko not_active IP Right Cessation
- 2000-06-27 AU AU57723/00A patent/AU5772300A/en not_active Abandoned
- 2000-06-27 EP EP00943217A patent/EP1190434B1/de not_active Expired - Lifetime
- 2000-06-27 WO PCT/US2000/017706 patent/WO2001001440A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
KR100752967B1 (ko) | 2007-08-30 |
KR20020036793A (ko) | 2002-05-16 |
EP1190434B1 (de) | 2008-07-16 |
JP2003503837A (ja) | 2003-01-28 |
EP1190434A1 (de) | 2002-03-27 |
US6373071B1 (en) | 2002-04-16 |
WO2001001440A1 (en) | 2001-01-04 |
AU5772300A (en) | 2001-01-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |