HK1048014A1 - 具有平面發射區和聚焦結構的電子源 - Google Patents

具有平面發射區和聚焦結構的電子源

Info

Publication number
HK1048014A1
HK1048014A1 HK03100103.1A HK03100103A HK1048014A1 HK 1048014 A1 HK1048014 A1 HK 1048014A1 HK 03100103 A HK03100103 A HK 03100103A HK 1048014 A1 HK1048014 A1 HK 1048014A1
Authority
HK
Hong Kong
Prior art keywords
electron source
emission region
focusing structure
planar emission
planar
Prior art date
Application number
HK03100103.1A
Other languages
English (en)
Inventor
Kuo Huei-Pei
Birecki Henryk
Lam Si-Ty
Louis Naberhuis Steven
Original Assignee
惠普公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 惠普公司 filed Critical 惠普公司
Publication of HK1048014A1 publication Critical patent/HK1048014A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/10—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using electron beam; Record carriers therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1409—Heads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/308—Semiconductor cathodes, e.g. having PN junction layers
HK03100103.1A 2001-02-27 2003-01-03 具有平面發射區和聚焦結構的電子源 HK1048014A1 (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/795,240 US6815875B2 (en) 2001-02-27 2001-02-27 Electron source having planar emission region and focusing structure

Publications (1)

Publication Number Publication Date
HK1048014A1 true HK1048014A1 (zh) 2003-03-14

Family

ID=25165082

Family Applications (1)

Application Number Title Priority Date Filing Date
HK03100103.1A HK1048014A1 (zh) 2001-02-27 2003-01-03 具有平面發射區和聚焦結構的電子源

Country Status (5)

Country Link
US (2) US6815875B2 (zh)
EP (1) EP1237174A1 (zh)
JP (1) JP2002260546A (zh)
CN (1) CN1244121C (zh)
HK (1) HK1048014A1 (zh)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6649431B2 (en) * 2001-02-27 2003-11-18 Ut. Battelle, Llc Carbon tips with expanded bases grown with simultaneous application of carbon source and etchant gases
US6781146B2 (en) * 2001-04-30 2004-08-24 Hewlett-Packard Development Company, L.P. Annealed tunneling emitter
JP4830217B2 (ja) * 2001-06-18 2011-12-07 日本電気株式会社 電界放出型冷陰極およびその製造方法
DE10225266A1 (de) * 2001-12-19 2003-07-03 Zeiss Carl Smt Ag Abbildungseinrichtung in einer Projektionsbelichtungsanlage
JP2004111292A (ja) * 2002-09-20 2004-04-08 Hitachi Displays Ltd 表示装置及びその製造方法
JP4298399B2 (ja) * 2003-06-26 2009-07-15 キヤノン株式会社 電子線装置及び該電子線装置を用いた電子線描画装置
US7456491B2 (en) * 2004-07-23 2008-11-25 Pilla Subrahmanyam V S Large area electron emission system for application in mask-based lithography, maskless lithography II and microscopy
KR20070098842A (ko) * 2004-12-16 2007-10-05 텔레젠 코퍼레이션 발광장치 및 관련 제조 방법
KR20060095318A (ko) * 2005-02-28 2006-08-31 삼성에스디아이 주식회사 전자 방출 소자와 이의 제조 방법
KR100889527B1 (ko) * 2007-11-21 2009-03-19 삼성에스디아이 주식회사 발광 장치 및 이 발광 장치를 광원으로 사용하는 표시 장치
US8084929B2 (en) * 2009-04-29 2011-12-27 Atti International Services Company, Inc. Multiple device shaping uniform distribution of current density in electro-static focusing systems
JP5301683B2 (ja) * 2009-12-17 2013-09-25 パイオニア株式会社 電子放出素子およびこれを備えた撮像装置
JP5328939B2 (ja) * 2010-01-07 2013-10-30 パイオニア株式会社 電子放出素子およびこれを備えた撮像装置
NL2007604C2 (en) * 2011-10-14 2013-05-01 Mapper Lithography Ip Bv Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams.
NL2006868C2 (en) 2011-05-30 2012-12-03 Mapper Lithography Ip Bv Charged particle multi-beamlet apparatus.
US9116290B1 (en) * 2011-10-07 2015-08-25 Bae Systems Information And Electronic Systems Integration Inc. Faceted, germanium slotted waveguide
JP6834817B2 (ja) * 2016-08-08 2021-02-24 株式会社ニューフレアテクノロジー マルチビーム検査用アパーチャ、マルチビーム用ビーム検査装置、及びマルチ荷電粒子ビーム描画装置
CN107331619A (zh) * 2017-06-28 2017-11-07 京东方科技集团股份有限公司 薄膜晶体管及其制作方法、显示装置、曝光装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4500791A (en) * 1980-06-07 1985-02-19 Dr. -Ing. Rudolf Hell Gmbh High stability electron beam generator for processing material
US4904895A (en) * 1987-05-06 1990-02-27 Canon Kabushiki Kaisha Electron emission device
FR2641412B1 (fr) * 1988-12-30 1991-02-15 Thomson Tubes Electroniques Source d'electrons du type a emission de champ
JPH0512988A (ja) * 1990-10-13 1993-01-22 Canon Inc 半導体電子放出素子
DE69204629T2 (de) * 1991-11-29 1996-04-18 Motorola Inc Herstellungsverfahren einer Feldemissionsvorrichtung mit integraler elektrostatischer Linsenanordnung.
JP3243471B2 (ja) 1994-09-16 2002-01-07 三菱電機株式会社 電子放出素子の製造方法
US5557596A (en) * 1995-03-20 1996-09-17 Gibson; Gary Ultra-high density storage device
KR100266517B1 (ko) * 1995-07-07 2000-09-15 가네꼬 히사시 전계 방출 냉 캐소드 및 개선된 게이트 구조를 갖는 전자 총
JP2765533B2 (ja) 1995-10-31 1998-06-18 日本電気株式会社 直線ビームマイクロ波管
JP3512933B2 (ja) * 1996-01-25 2004-03-31 株式会社東芝 電界放出型冷陰極装置及びその製造方法
TW391022B (en) 1997-10-29 2000-05-21 Mitsubishi Rayon Co Field emission electron source, method of producing the same, and use of the same
US6326725B1 (en) * 1998-05-26 2001-12-04 Micron Technology, Inc. Focusing electrode for field emission displays and method
US6190223B1 (en) * 1998-07-02 2001-02-20 Micron Technology, Inc. Method of manufacture of composite self-aligned extraction grid and in-plane focusing ring
TW436837B (en) * 1998-11-16 2001-05-28 Matsushita Electric Works Ltd Field emission-type electron source and manufacturing method thereof and display using the electron source
JP2000268706A (ja) 1999-03-18 2000-09-29 Matsushita Electric Ind Co Ltd 電子放出素子及びそれを用いた画像描画装置
JP2000294122A (ja) * 1999-04-08 2000-10-20 Nec Corp 電界放出型冷陰極及び平面ディスプレイの製造方法
TW472273B (en) * 1999-04-23 2002-01-11 Matsushita Electric Works Ltd Field emission-type electron source and manufacturing method thereof
US6538367B1 (en) 1999-07-15 2003-03-25 Agere Systems Inc. Field emitting device comprising field-concentrating nanoconductor assembly and method for making the same
JP3487229B2 (ja) 1999-07-27 2004-01-13 松下電工株式会社 電界放射型電子源およびその製造方法

Also Published As

Publication number Publication date
CN1372290A (zh) 2002-10-02
CN1244121C (zh) 2006-03-01
JP2002260546A (ja) 2002-09-13
US6815875B2 (en) 2004-11-09
EP1237174A1 (en) 2002-09-04
US20050001530A1 (en) 2005-01-06
US7208867B2 (en) 2007-04-24
US20020117953A1 (en) 2002-08-29

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