DE60029281D1 - Sinterkörper aus Aluminiumnitrid und Verfahren zu seiner Herstellung - Google Patents

Sinterkörper aus Aluminiumnitrid und Verfahren zu seiner Herstellung

Info

Publication number
DE60029281D1
DE60029281D1 DE60029281T DE60029281T DE60029281D1 DE 60029281 D1 DE60029281 D1 DE 60029281D1 DE 60029281 T DE60029281 T DE 60029281T DE 60029281 T DE60029281 T DE 60029281T DE 60029281 D1 DE60029281 D1 DE 60029281D1
Authority
DE
Germany
Prior art keywords
production
sintered body
aluminum nitride
nitride sintered
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60029281T
Other languages
English (en)
Other versions
DE60029281T2 (de
Inventor
Akira Kuibira
Kenjiro Higaki
Hirohiko Nakata
Kazutaka Sasaki
Takashi Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE60029281D1 publication Critical patent/DE60029281D1/de
Publication of DE60029281T2 publication Critical patent/DE60029281T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Products (AREA)
DE60029281T 1999-08-25 2000-08-23 Sinterkörper aus Aluminiumnitrid und Verfahren zu seiner Herstellung Expired - Lifetime DE60029281T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP23770999A JP2001064079A (ja) 1999-08-25 1999-08-25 窒化アルミニウム焼結体及びその製造方法
JP23770999 1999-08-25

Publications (2)

Publication Number Publication Date
DE60029281D1 true DE60029281D1 (de) 2006-08-24
DE60029281T2 DE60029281T2 (de) 2006-11-16

Family

ID=17019350

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60029281T Expired - Lifetime DE60029281T2 (de) 1999-08-25 2000-08-23 Sinterkörper aus Aluminiumnitrid und Verfahren zu seiner Herstellung

Country Status (5)

Country Link
US (1) US6403510B1 (de)
EP (1) EP1078902B1 (de)
JP (1) JP2001064079A (de)
CA (1) CA2316109A1 (de)
DE (1) DE60029281T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6607836B2 (en) * 2000-10-23 2003-08-19 Ngk Insulators, Ltd. Material of low volume resistivity, an aluminum nitride sintered body and a member used for the production of semiconductors
JP5073135B2 (ja) * 2001-07-05 2012-11-14 電気化学工業株式会社 窒化アルミニウム焼結体、その製造方法及び用途
JP4243943B2 (ja) 2002-04-22 2009-03-25 日本碍子株式会社 窒化アルミニウム材料および半導体製造用部材
JP4386695B2 (ja) * 2002-11-14 2009-12-16 日本碍子株式会社 窒化アルミニウム焼結体の製造方法
US7371704B2 (en) * 2002-12-25 2008-05-13 Ngk Insulators, Ltd. Sintered bodies of yttrium-aluminum garnet, a method of producing the same and sintering aid therefor
JP4424659B2 (ja) * 2003-02-28 2010-03-03 日本碍子株式会社 窒化アルミニウム質材料および半導体製造装置用部材
TWI262534B (en) * 2003-02-28 2006-09-21 Ngk Insulators Ltd Aluminum nitride materials and members for use in the production of semiconductors
JP4970712B2 (ja) * 2003-06-19 2012-07-11 日本碍子株式会社 窒化アルミニウム焼結体、窒化アルミニウムの製造方法、及び窒化アルミニウムの評価方法
TW200521103A (en) * 2003-11-21 2005-07-01 Toshiba Kk High thermally conductive aluminum nitride sintered product
US7211216B2 (en) * 2004-06-18 2007-05-01 Ngk Insulators, Ltd. Aluminum nitride ceramic, semiconductor manufacturing member, and manufacturing method for aluminum nitride ceramic
JP2006131429A (ja) * 2004-11-02 2006-05-25 Towa Corp 低密着性材料及び樹脂成形型
US8093713B2 (en) * 2007-02-09 2012-01-10 Infineon Technologies Ag Module with silicon-based layer
JP5121268B2 (ja) * 2007-03-27 2013-01-16 日本碍子株式会社 窒化アルミニウム焼結体及び半導体製造装置用部材
JP6262598B2 (ja) * 2014-05-12 2018-01-17 住友電気工業株式会社 ＡｌＮ焼結体、ＡｌＮ基板およびＡｌＮ基板の製造方法
KR20210010399A (ko) 2019-07-18 2021-01-27 니뽄 도쿠슈 도교 가부시키가이샤 질화알루미늄 소결체, 그 제조 방법, 및 질화알루미늄 소결체를 사용한 반도체 제조 장치용 부품
JP7043689B1 (ja) * 2020-06-22 2022-03-29 デンカ株式会社 窒化アルミニウム焼結体、及び基板

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS569475B2 (de) 1973-02-27 1981-03-02
JPH0712981B2 (ja) 1985-03-13 1995-02-15 株式会社東芝 窒化アルミニウム焼結体の製造方法
JPH0717454B2 (ja) 1985-06-28 1995-03-01 株式会社東芝 窒化アルミニウム焼結体およびその製造方法
JPS63190761A (ja) 1987-01-30 1988-08-08 京セラ株式会社 窒化アルミニウム質焼結体
JP2742600B2 (ja) 1989-04-18 1998-04-22 京セラ株式会社 窒化アルミニウム質焼結体およびその製造方法
JP3194992B2 (ja) 1991-06-04 2001-08-06 シャープ株式会社 ワイドアスペクトテレビジョン受像機
AU2240192A (en) * 1991-06-19 1993-01-12 Lanxide Technology Company, Lp Novel aluminum nitride refractory materials and methods for making the same
US5760532A (en) * 1991-12-26 1998-06-02 Ngk Spark Plug Co., Ltd. Sintered ceramic body for a spark plug
JPH0649613A (ja) 1992-07-02 1994-02-22 Nippon Alum Co Ltd めっき処理方法
DE69427722T2 (de) * 1993-05-21 2002-05-08 Toshiba Kawasaki Kk Sinterkörper aus Aluminiumnitriol und Verfahren zu seiner Herstellung
JP3362460B2 (ja) 1993-06-30 2003-01-07 カシオ計算機株式会社 走行状態検出装置
US5744411A (en) * 1993-07-12 1998-04-28 The Dow Chemical Company Aluminum nitride sintered body with high thermal conductivity and its preparation
JPH07121830A (ja) 1993-10-21 1995-05-12 Matsushita Electric Ind Co Ltd 薄膜磁気ヘッド
US5541145A (en) * 1993-12-22 1996-07-30 The Carborundum Company/Ibm Corporation Low temperature sintering route for aluminum nitride ceramics
US5773377A (en) * 1993-12-22 1998-06-30 Crystalline Materials Corporation Low temperature sintered, resistive aluminum nitride ceramics
US5763344A (en) * 1994-12-01 1998-06-09 Kabushiki Kaisha Toshiba Aluminum nitride sintered body and method of manufacturing the same
KR0166406B1 (ko) * 1995-06-23 1999-01-15 니시무로 타이조 고열전도성 질화규소 소결체, 그 제조방법 및 압접구조체
US6017485A (en) * 1996-03-28 2000-01-25 Carborundum Corporation Process for making a low electrical resistivity, high purity aluminum nitride electrostatic chuck
JP3457495B2 (ja) * 1996-03-29 2003-10-20 日本碍子株式会社 窒化アルミニウム焼結体、金属埋設品、電子機能材料および静電チャック
JP2962466B2 (ja) 1997-01-06 1999-10-12 株式会社東芝 窒化アルミニウム焼結体
JP4161423B2 (ja) * 1997-10-30 2008-10-08 住友電気工業株式会社 窒化アルミニウム焼結体及びそのメタライズ基板
US6271136B1 (en) * 2000-04-04 2001-08-07 Taiwan Semiconductor Manufacturing Company Multi-step plasma process for forming TiSiN barrier

Also Published As

Publication number Publication date
US6403510B1 (en) 2002-06-11
CA2316109A1 (en) 2001-02-25
DE60029281T2 (de) 2006-11-16
EP1078902A1 (de) 2001-02-28
JP2001064079A (ja) 2001-03-13
EP1078902B1 (de) 2006-07-12

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